Chemical mechanical polishing apparatus and method to minimize slurry accumulation and scratch excursions
Inactive Publication Date: 2005-05-26
TEXAS INSTR INC
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- Abstract
- Description
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- Application Information
AI Technical Summary
Benefits of technology
[0007] The present invention achieves technical advantages as an apparatus and system used in conjunction with rinse water to thoroughly clean a polishing pad of a chemical-mechanical polishing apparatus after a wafer has been polished. A sprayer or sprayer extension is strategically positioned and securely retained on a portion of the dispensing arm and adapted for applying a rinse water spray directly to the center portion of the pad preventing conglomerated slurry from accumulating.
Problems solved by technology
Problems of conventional methods of performing a chemical mechanical polish is that they produce nonuniform wafers and produce larger than desirable edge exclusion areas.
Both of these problems impair operation of resulting electronic components formed from the semiconductor devices.
Semiconductor wafer non-uniformity may cause undesirable layers not to be removed at some places and desirable layers to be removed at other places on the wafer surface.
This causes various areas on the wafer surface to be unusable for forming semiconductor devices.
Known CMP systems, however, suffer from significant wafer-to-wafer non-uniformities.
This can also adversely affect the throughput and yield of the CMP process.
Another limitation of existing CMP systems relates to a part of the system known as the CMP polish pad.
These debris may be on the surface of the polishing pad or trapped within grooves of the polishing pad.
Although conventional spray rinse approaches and the above-mentioned cleaning brush apparatus provide some measure of cleaning to the polishing pad, some debris can remain behind within the center area of the polishing pad.
Method used
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[0011] The numerous innovative teachings of the present application will be described with particular reference to the presently preferred exemplary embodiments. However, it should be understood that this class of embodiments provides only a few examples of the many advantageous uses and innovative teachings herein. In general, statements made in the specification of the present application do not necessarily delimit any of the various claimed inventions. Moreover, some statements may apply to some inventive features, but not to others. Throughout the drawings, it is noted that the same reference numerals or letters will be used to designate like or equivalent elements having the same function. Detailed descriptions of known functions and constructions unnecessarily obscuring the subject matter of the present invention have been omitted for clarity.
[0012] Referring now to FIG. 1 there is shown a conventional chemical-mechanical polishing system 100 that employs a polishing pad clea...
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Abstract
A pad cleaning device (210, 220, 250) is used in conjunction with spray rinse water to thoroughly clean a polishing pad (110) of a chemical-mechanical polishing system (100) after a wafer (120) has been polished. A sprayer or sprayer extension (210, 220, 250) is strategically positioned and securely retained on a portion of the dispensing arm (130) and adapted for applying a rinse water spray directly to the center portion (150) of the pad preventing conglomerated slurry from accumulating.
Description
FIELD OF THE INVENTION [0001] The present invention relates generally to chemical mechanical polishing and, more particularly, to polishing pad cleaner for in-situ cleaning. BACKGROUND OF THE INVENTION [0002] CMP is a process for improving the surface planarity of a semiconductor wafer and involves the use of mechanical pad polishing systems usually with a silica-based slurry. CMP offers a practical approach for achieving the important advantage of overall wafer planarity. [0003] CMP systems place a semiconductor wafer in contact with a polishing pad that rotates relative to the semiconductor wafer. The semiconductor wafer may be stationary, or it may also rotate on a carrier that holds the wafer. Problems of conventional methods of performing a chemical mechanical polish is that they produce nonuniform wafers and produce larger than desirable edge exclusion areas. Both of these problems impair operation of resulting electronic components formed from the semiconductor devices. Semic...
Claims
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Login to View More IPC IPC(8): B24B1/00B24B37/04B24B53/007
CPCB24B53/017
InventorWANG, MICHAEL SHU-HUANWALLACE, GEORGE T.STANLEY, TROY
OwnerTEXAS INSTR INC