Lateral Diffused Metal Oxide Semiconductor Field Effect Transistor

A technology of oxide semiconductors and field effect transistors, applied in the field of laterally diffused metal oxide semiconductor field effect transistors, can solve the problems of burning integrated circuits, component damage, gate damage, etc., and achieve the effect of increasing the area of ​​components

CN109326649BActive Publication Date: 2021-10-26NUVOTON
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2021-10-26

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Abstract

An embodiment of the present invention provides a laterally diffused metal oxide semiconductor field effect transistor comprising: a body region located on the upper part of the substrate; a drift region located on the upper part of the substrate and adjacent to the body region; a gate located on the body region and the drift region; The source region is located in the body region; the drain region is located in the drift region; the first isolation region is located in the drift region between the source region and the drain region; the top doped region is located under the first isolation region ; the capacitor is located above the well; and the second isolation region is located in the well between the source region and the capacitor; wherein in a plan view, the gate is in the shape of a circle, the drain region is arranged on the inner side of the circle, and the source The region is arranged outside the circle shape; wherein the circle shape has a gap, and the first isolation region and the second isolation region are connected at the gap, and the capacitor surrounds the gate.
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Description

technical field

[0001] The embodiments of the present invention relate to a semiconductor technology, in particular to a laterally diffused metal oxide semiconductor field effect transistor. Background technique

[0002] High-voltage semiconductor components are suitable for high-voltage and high-power integrated circuits. Conventional high voltage semiconductor devices include lateral diffused metal oxide semiconductor field effect transistors (lateral diffused metal oxide semiconductor, LDMOS). The advantage of high-voltage semiconductor components is that they are easily compatible with other processes and are cost-effective, so they are widely used in power supplies, power management, display driver IC components, communications, automotive electronics, industrial control and other fields.

[0003] When the LDMOSFET is connected to an AC power source, a large amount of electrostatic charge may accumulate, and the electrostatic charge may flow at any two terminals to gen...

Examples

Embodiment Construction

[0051] Many different implementation methods or examples are disclosed below to implement different features of the embodiments of the present invention, and specific elements and embodiments of their arrangement are described below to illustrate the embodiments of the present invention. Of course, these embodiments are only for illustration, and should not limit the scope of the embodiments of the present invention. For example, it is mentioned in the description that the first feature is formed on the second feature, which includes the embodiment that the first feature is in direct contact with the second feature, and also includes other features between the first feature and the second feature. Embodiments of the features, that is, the first feature is not in direct contact with the second feature. In addition, repeated symbols or signs may be used in different embodiments, and these repetitions are only for the purpose of simply and clearly describing the embodiments of th...