Hot isostatic pressing device suitable for ammonothermally producing gallium nitride monocrystal product

A gallium nitride single crystal, hot isostatic pressing technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc. The effect of large size

CN109930202APending Publication Date: 2019-06-25SICHUAN AVIATION IND CHUANXI MACHINE
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2019-06-25

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Abstract

The invention discloses a hot isostatic pressing device suitable for ammonothermally producing a gallium nitride monocrystal product. The hot isostatic pressing device is characterized by comprising aworking cylinder (2), in which a hot area is configured, and a gallium nitride single crystal growth container (3) arranged in the hot area (2) and capable of generating gallium nitride single crystal in diameter of 200-400 mm or larger; the hot zone is divided into an upper heating zone and a lower heating zone, which are used for correspondingly heating the crystallization zone and the dissolving zone of the gallium nitride single crystal growth container (3) respectively. Due to the hot area arranged correspondingly to the position of a baffle (18) in the gallium nitride single crystal growth container (3), it is able to generate a middle heat insulation ring (16) which enables the upper area and the lower area of the baffle (18) to generate a step temperature difference suitable for generating a gallium nitride single crystal product through the ammonothermal method. According to the device, the gallium nitride single crystal growth container (3) is improved, that is, the workingstress of the high-pressure kettle becomes pressure stress, so that the specification and size of the integrally forged gallium nitride single crystal growth container (3) can be increased, and a gallium nitride single crystal product in diameter of 200-400 mm or larger can be generated.
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Description

technical field

[0001] The invention relates to a hot isostatic pressing device suitable for producing gallium nitride single crystal products by ammonothermal method, in particular to a hot isostatic pressing device suitable for producing large-scale gallium nitride single crystal products or producing gallium nitride single crystal products in large quantities by ammonothermal method hot isostatic pressing device. Background technique

[0002] The third-generation semiconductor materials are wide-bandgap semiconductor materials represented by gallium nitride (GaN), silicon carbide (SiC), diamond, and zinc oxide. Gallium nitride has unique properties such as large band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift velocity, and small dielectric constant. It is widely used in optoelectronic devices, power electronics, radio frequency microwave devices, lasers and detectors, etc. It has a broad market prospect.

[0003] GaN si...

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Embodiment Construction

[0020] In order to further illustrate the preferred embodiment of the present invention, it will be described in detail below with accompanying drawings, so as to make the present invention easier to understand. However, the following descriptions are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Any modification or change made on the basis of the inventive spirit of the present invention, All should still belong to the category that the present invention intends to protect. It should also be noted that unless otherwise specified and limited, the term "setting" should be understood in a broad sense, and those skilled in the art can understand the specific meanings of the above terms in the present invention in specific situations.

[0021] Hot isostatic pressing technology is a kind of process in a closed ultra-high pressure container, using nitrogen or argon as the pressure transmissio...