Semiconductor device and power conversion device

Abstract

A semiconductor device is obtained in which peeling between a filling member and a metal terminal is suppressed. The semiconductor device comprises: an insulating substrate (6) having a front surface and a back surface, a semiconductor element (7) being bonded to the front surface; a base plate (1) bonded to the back surface of the insulating substrate (6); a shell member (2) surrounding the insulating substrate (6); a filling member (10) having an upper surface, covering the insulating substrate (6), and being filled in a region surrounded by the base plate (1) and the shell member (2); and a plate-shaped metal member (11) bent inside the filling member (10) to the upper surface side of the filling member (10), one end of which is bonded to the surface of the insulating substrate (6), and the other end of which is separated from the inner wall of the shell member (2) and exposed from the upper surface of the filling member (10).

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a power conversion device including the semiconductor device. Background Art

[0002] Generally speaking, semiconductor elements that have a vertical current path in order to cope with high voltage and large current are called power semiconductor elements (for example, IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), bipolar transistors, diodes, etc.).

[0003] Semiconductor devices, in which power semiconductor elements are mounted on circuit boards and encapsulated by filling members, are used in a wide range of fields such as industrial equipment, automobiles, and railways. In recent years, as the performance of equipment equipped with semiconductor devices has improved, there has been a growing demand for improved performance of semiconductor devices, such as increasing rated voltage and rated current, and expanding the operating temperature range (higher or lower temperature).

[0004] As a packaging structure for semiconductor devices, a packaging structure called a shell type is the mainstream. In a shell type semiconductor device, a filling member is filled in the shell to prevent poor insulation when a high voltage is applied. Generally, an insulating gel filler represented by silicone gel or a thermosetting resin such as epoxy resin is used as the filling member of the semiconductor device.

[0005] When manufacturing a semiconductor device, when a liquid filling member before solidification is filled into the housing of the semiconductor device, bubbles are sometimes involved in the filling member. The semiconductor device may malfunction due to bubbles involved in the filling member. Therefore, as a method for removing bubbles in the filling member (defoaming treatment), the following treatment is performed: when the filling member is in a liquid state before solidification, the semiconductor device is arranged on a flat plane and exposed to a low pressure (depressurization) environment. When the semiconductor device is exposed to a low pressure environment, the bubbles in the filling member expand, the bubbles rise in the filling member, and are eventually discharged outside the filling member.

[0006] As a conventional semiconductor device, a semiconductor device including a lead having a flat portion in a filling member and a contact portion between the lead and a case or the like is disclosed (for example, Patent Document 1).

[0007] However, in the conventional semiconductor device described in Patent Document 1, when the semiconductor device is arranged on a flat plane during defoaming treatment, a flat portion parallel to the flat plane exists in the filling member, such as a lead. Therefore, even if bubbles rise in the filling member, they are sometimes unable to rise further upward due to the flat portion of the lead and remain in the filling member. When the filling member is cured in this state and bubbles remain in the cured filling member, sometimes peeling occurs between the lead and the filling member starting from the remaining bubbles.

[0008] Therefore, as a semiconductor device for solving this technical problem, the following semiconductor device is disclosed: a semiconductor device having an inclined lead and a contact portion between the lead and a housing, etc. in a filling member (for example, Patent Document 2). In this way, by inclining the lead in the filling member, bubbles on the lower surface side of the lead rise along the inclined lead toward the upper side of the filling member, which can reduce the amount of bubbles remaining on the lower surface of the lead.

[0009] Prior art literature

[0010] Patent Literature

[0011] Patent Document 1: Japanese Patent Application Laid-Open No. 2007-329362 (page 4, figure 1)

[0012] Patent Document 2: Japanese Patent Application Laid-Open No. 9-74115 (page 3, Figure 1) Summary of the invention

[0013] Technical issues to be solved by the invention

[0014] However, in the conventional semiconductor device described in Patent Document 2, when the semiconductor device is arranged on a flat plane during defoaming treatment, there are inclined leads and contact portions between the leads and the housing, etc. in the filling member. Therefore, bubbles rise along the inclined leads to the upper part of the filling member, which can reduce the bubbles remaining on the lower surface side of the leads. However, in the contact portion between the leads and the housing, etc., bubbles sometimes cannot rise further upward and remain in the contact portion between the leads and the housing, etc. in the filling member. When the filling member is cured in this state and bubbles remain inside the cured filling member, sometimes peeling occurs between the leads and the filling member at the contact portion between the leads and the housing, etc., starting from the remaining bubbles.

[0015] This invention has been made to solve the above-mentioned technical problems, and an object of the invention is to obtain a semiconductor device which reduces bubbles in a filling member and suppresses separation between a metal member and a filling member.

[0016] Technical solutions for solving technical problems

[0017] The semiconductor device of the invention comprises: an insulating substrate having a surface and a back surface, with a semiconductor element bonded to the surface; a base plate bonded to the back surface of the insulating substrate; a shell member surrounding the insulating substrate; a filling member having an upper surface, covering the insulating substrate, and filled in the area surrounded by the base plate and the shell member; and a plate-shaped metal member, which is bent inside the filling member to the upper surface side of the filling member, one end of which is bonded to the surface of the insulating substrate, and the other end is separated from the inner wall of the shell member and exposed from the upper surface of the filling member.

[0018] Effects of the Invention

[0019] According to the invention, since the metal component is bent to the upper surface side of the filling component and the other end is separated from the inner wall of the shell component and exposed from the upper surface of the filling component, the bubbles in the filling component can be reduced and the peeling of the metal component and the filling component can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram showing a planar structure of a semiconductor device according to Embodiment 1 of the present invention.

[0021] Figure 2 It is a schematic diagram showing a cross-sectional structure of a semiconductor device according to Embodiment 1 of the present invention.

[0022] Figure 3 It is a schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the first embodiment of the present invention.

[0023] Figure 4 It is a schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the first embodiment of the present invention.

[0024] Figure 5 It is a schematic diagram showing a cross-sectional structure of another semiconductor device according to the first embodiment of the present invention.

[0025] Figure 6 It is a schematic diagram showing a cross-sectional structure of a semiconductor device according to a second embodiment of the present invention.

[0026] Figure 7 It is a schematic diagram showing the cross-sectional structure of a metal member of a semiconductor device according to a second embodiment of the present invention.

[0027] Figure 8 It is a schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the second embodiment of the present invention.

[0028] Fig. 9 It is a schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the second embodiment of the present invention.

[0029] Fig.10It is a schematic diagram showing a cross-sectional structure of a semiconductor device according to a third embodiment of the present invention.

[0030] Fig.11 It is a schematic diagram showing a planar structure of a metal member of a semiconductor device according to a third embodiment of the present invention.

[0031] Fig.12 It is a schematic diagram showing a plan structure of other metal components of the semiconductor device according to the third embodiment of the present invention.

[0032] Fig.13 It is a block diagram showing the structure of a power conversion system to which the semiconductor devices according to the first to third embodiments of the present invention are applied.

[0033] Reference numerals

[0034] 1: base plate; 2: shell member; 3: insulating layer; 4, 5: metal layer; 6: insulating substrate; 7: semiconductor element; 8: bonding material; 9: bonding wire; 10: filling member; 11: electrode terminal; 11a: bonding portion; 11b, 11f: leg portion; 11c, 11e: bending portion; 11d: inclined portion; 11g: terminal portion; 11h: through hole; 100, 200, 300, 400, 2002: semiconductor device; 1000: power supply; 2000: power conversion device; 2001: main conversion circuit; 2003: control circuit; 3000: load. DETAILED DESCRIPTION

[0035] First, the overall structure of the semiconductor device of the present invention is described with reference to the accompanying drawings. In addition, the drawings are schematic and do not reflect the exact size of the components shown. In addition, the parts with the same figure mark are the same or equivalent parts, which are common in the entire specification.

[0036] Implementation method 1.

[0037] Figure 1 It is a schematic diagram showing a planar structure of a semiconductor device according to Embodiment 1 of the present invention. Figure 2 It is a schematic diagram showing a cross-sectional structure of a semiconductor device according to Embodiment 1 of the present invention. Figure 1 The schematic diagram of the cross-section structure at the dot-dash line AA in the figure is as follows: Figure 2 In the figure, a semiconductor device 100 includes a base plate 1, a case member 2, an insulating substrate 6, a semiconductor element 7, a bonding material 8, a bonding wire 9, a filling member 10, and an electrode terminal 11 as a metal member.

[0038] exist Figure 1 In the embodiment, the case member 2 is bonded to the outer periphery of the base plate 1 so as to surround the insulating substrate 6. A part of the electrode terminal 11 is arranged on the upper part of the case member 2 so as to be electrically connected to the outside.

[0039] exist Figure 2 In the embodiment, the insulating substrate 6 includes an insulating layer 3 such as ceramic and metal layers 4 and 5 formed on the surface and back of the insulating layer 3. As the insulating layer 3, silicon nitride (Si3N4), aluminum nitride (AlN), aluminum oxide (AlO: alumina), aluminum oxide containing zirconium oxide (Zr), and boron nitride (BN) can be used. In particular, AlN and Si3N4 are preferred from the perspective of thermal conductivity, and Si3N4 is more preferred from the perspective of material strength. Alternatively, epoxy resin or the like can be used as the insulating layer 3.

[0040] The insulating substrate 6 has heat dissipation and insulation properties and is not limited to the above-mentioned materials. The insulating layer 3 may be formed by providing metal layers 4 and 5 on a resin cured product in which ceramic powder is dispersed or a resin cured product in which a ceramic plate is embedded.

[0041] In addition, when the insulating layer 3 of the insulating substrate 6 is a resin cured product in which ceramic powder is dispersed, AlO, SiO2, AlN, BN, Si3N4, etc. are used as the ceramic powder used in the insulating layer 3, but it is not limited to these, and diamond, silicon carbide (SiC), boron oxide (B2O3), etc. can also be used. Powders made of resins such as silicone resins and acrylic resins can also be used.

[0042] As the shape of these powders, spherical shapes are often used, but the shape is not limited to this. Crushed, granular, scaly, aggregates, etc. can also be used. The filling amount of the powder can be filled in an amount that can obtain the required heat dissipation and insulation. As the resin used in the insulating substrate 6, epoxy resin is usually used, but it is not limited to this. Polyimide resin, silicone resin, acrylic resin, etc. can also be used. Any material that has both insulation and adhesiveness can be used.

[0043] The metal layers 4 and 5 formed on both sides (front and back) of the insulating layer 3 use metals with the same size (size) and thickness. However, since circuits are formed on the metal layers 4 and 5, respectively, the pattern shapes may be different. In addition, the size of the metal layers 4 and 5 is smaller than the insulating layer 3. By making the size of the metal layers 4 and 5 smaller than the insulating layer 3, the creepage distance between the metal layers 4 and 5 can be increased to ensure insulation. Furthermore, by making the size of the metal layer 5 smaller than the insulating layer 3, the filling member 10 can be wrapped around the back side of the insulating layer 3.

[0044] As the metal layers 4 and 5, metals with excellent electrical and thermal conductivity can be used, such as aluminum and aluminum alloys (ALSIC, etc.), copper and copper alloys (CuMo, etc.), iron, etc. In particular, from the viewpoint of thermal and electrical conductivity, copper is preferably used. However, it is not limited to this, as long as the material has the required heat dissipation characteristics. In addition, a material obtained by compounding them can be used. Furthermore, a composite material of copper / invar / copper, etc. can be used. In addition, the surface of the metal layers 4 and 5 can be nickel-plated, but it is not limited to this, and gold-plating or tin-plating can also be performed, as long as the structure can supply the required current and voltage to the semiconductor element 7.

[0045] A semiconductor element 7 is mounted at a predetermined position on the metal layer 4 on the surface side of the insulating layer 3. The semiconductor element 7 is electrically bonded to the metal layer 4 on the surface side of the insulating layer 3 via a bonding material 8 such as solder. In addition, as the semiconductor element 7, for example, a power control semiconductor element (switching element) such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor) for controlling a large current, a diode for reflux, etc. are used.

[0046] As a material constituting the semiconductor element 7, for example, SiC, which is a wide bandgap semiconductor, can be applied in addition to silicon (Si). Si semiconductor elements or SiC semiconductor elements using them as substrate materials are applied. In addition, as wide bandgap semiconductors, there are gallium nitride (GaN)-based materials or diamond (C) and the like. When a wide bandgap semiconductor is used, the number of components can be reduced because the allowable current density is high and the power loss is also low, so the semiconductor device can be miniaturized.

[0047] In the bonding between the metal layer 4 on the surface side of the insulating substrate 6 and the semiconductor element 7, solder is generally used as the bonding material 8. However, the bonding material 8 is not limited to solder, and in addition to solder, for example, sintered silver, a conductive adhesive, a liquid phase diffusion material, etc. can also be applied. Compared with the solder material, the melting temperature of sintered silver or the liquid phase diffusion material is high, and when the metal layer 5 on the back side of the insulating substrate 6 is bonded to the base plate 1, it will not melt again, and the bonding reliability between the semiconductor element 7 and the insulating substrate 6 is improved.

[0048] Furthermore, since the melting temperature of sintered silver or liquid phase diffusion material is higher than that of solder, the operating temperature of semiconductor device 100 can be increased. Since the thermal conductivity of sintered silver is better than that of solder, the heat dissipation of semiconductor element 7 is improved, thereby improving reliability. Since liquid phase diffusion material can be bonded with a lower load than sintered silver, it has good processability and can prevent the influence of damage to semiconductor element 7 due to bonding load.

[0049] The base plate 1 is bonded to the metal layer 5 on the back side of the insulating substrate 6 via a bonding material 8 such as solder. The base plate 1 becomes the bottom plate of the semiconductor device 100, and forms a region surrounded by the housing member 2 arranged around the base plate 1 and the base plate 1. Copper or aluminum is used as the material of the base plate 1. In addition, the surface of the base plate 1 can be nickel-plated, but it is not limited to this, and gold plating or tin plating can also be performed.

[0050] As the bonding material 8 for bonding the metal layer 5 on the back side of the insulating substrate 6 and the base plate 1, for example, solder can be used. As the solder, from the viewpoint of bonding reliability, a solder material of a Sn-Sb composition type is preferred. As for the bonding of the metal layer 5 on the back side of the insulating substrate 6 and the base plate 1, similarly to the bonding of the metal layer 4 on the front side of the insulating substrate 6 and the semiconductor element 7, sintered silver and a liquid phase diffusion material can be applied in addition to solder.

[0051] Here, insulation can be ensured by an insulating sheet instead of the insulating substrate 6. In this case, for example, an insulating sheet is directly attached to the base plate 1, and the metal layer 4 having a wiring pattern and the semiconductor element 7 are bonded and stacked in this order on the insulating sheet by solder or the like.

[0052] In the base plate 1 , at least the front surface side which is the insulating substrate 6 side is a flat surface, and usually both the front surface and the back surface are flat.

[0053] The housing member 2 is required to not be thermally deformed and maintain insulation within the operating temperature range of the semiconductor device 100. Therefore, as the housing member 2, a resin material with a high thermal softening point is preferably used, for example, a resin with a high softening point such as PPS (Poly Phenylene Sulfide) resin or PBT (Polybutylene terephthalate) resin. However, there is no particular limitation as long as it does not be thermally deformed and has insulation within the operating temperature range of the semiconductor device 100.

[0054] An adhesive (not shown) is used to bond the shell member 2 and the base plate 1. The adhesive is filled between the bottom surface of the shell member 2 and the base plate 1. As the material of the adhesive, silicone resin, epoxy resin, etc. are generally used. The adhesive is applied to at least one of the shell member 2 and the base plate 1, and the shell member 2 and the base plate 1 are fixed and then bonded by thermal curing.

[0055] The electrode terminal 11 is insert-molded or outsert-molded in the shell member 2 and is used for input / output of external current and voltage. A portion of the electrode terminal 11 is arranged in the filling member 10 and is turned (inclined) toward the upper surface side of the filling member 10. One end of the electrode terminal 11 is bent and joined to the surface (metal layer 4) of the insulating substrate 6. The other end of the electrode terminal 11 is bent and exposed (protrudes) from the upper surface of the filling member 10. The other end side of the electrode terminal 11 is arranged in the shell member 2 separately from the inner wall (side) of the shell member 2. In addition, the other end side of the electrode terminal 11 is a structure protruding from the upper side of the shell member 2 to the outside of the shell member 2.

[0056] The electrode terminal 11 includes a joint portion 11a, leg portions 11b, 11f, bent portions 11c, 11e, an inclined portion (slanted portion) 11d, and a terminal portion 11g. The joint portion 11a of the electrode terminal 11 is joined to a predetermined position of the metal layer 4 on the surface side of the insulating substrate 6. The terminal portion 11g of the electrode terminal 11 is an electrical connection portion with the outside. The inclined portion 11d of the electrode terminal 11 is a portion where the electrode terminal 11 turns, is arranged in the filling member 10, and turns to the upper surface side of the filling member 10 in a straight line shape (linearly). From the joint portion 11a side of the electrode terminal 11 to the terminal portion 11g side of the electrode terminal 11, it tilts toward the upper surface side of the filling member 10. In other words, the electrode terminal 11 turns (tilts) in a manner that the distance to the upper surface of the filling member 10 becomes closer as it moves from one end to the other end. In addition, the inclined portion 11 d of the electrode terminal 11 directly and continuously connects the bent portion 11 c at one end and the bent portion 11 e at the other end.

[0057] The bent portions 11c and 11e of the electrode terminal 11 are formed at both ends (both sides) of the inclined portion 11d of the electrode terminal 11. In other words, the inclined portion 11d of the electrode terminal 11 is formed between the bent portion 11c on one end side and the bent portion 11e on the other end side. In addition, the bent portions 11c and 11e of the electrode terminal 11 are arranged in the filling member 10. The bent portion 11c (first bent portion) on one side of the one end side of the electrode terminal 11 is connected to the joint portion 11a via the leg 11b (first leg). The bent portion 11e (second bent portion) on the other side of the other end side of the electrode terminal 11 is connected to the terminal portion 11g via the leg 11f (second leg). Each of the bent portions 11c and 11e connects the inclined portion 11d to the joint portion 11a or the terminal portion 11g in a manner that each of the leg 11b and 11f is parallel to the inner wall surface of the shell member 2. Here, the so-called configuration of the curved portions 11c and 11e in parallel with the inner wall surface of the housing member 2 refers to the parallelism within the range in which bubbles generated inside the filling member 10 described later can move without staying at the connection portion at each curved portion 11c and 11e and the inclined portion 11d. In addition, the leg portion 11f of the electrode terminal 11 is configured to be separated (with a gap) from the inner wall (side) of the housing member 2. In this way, the leg portion 11f of the electrode terminal 11 is configured to be separated from the inner wall of the housing member 2, thereby, when the semiconductor device 100 is manufactured, bubbles generated in the filling member 10 and rising to the upper surface of the filling member 10 can be discharged to the outside of the filling member 10 without remaining (retaining) on ​​the lower surface side of the electrode terminal 11. Therefore, the bubbles in the filling member 10 can be reduced.

[0058] As described above, the electrode terminal 11 is preferably bent at two or more locations inside the filling member 10. The electrode terminal 11 is bent at two or more locations, so that a surface (non-parallel surface) that is turned relative to the surface of the base plate 1 is obtained inside the filling member 10, so that bubbles inside the filling member 10 can eventually escape (discharge) to the outside of the filling member 10. In addition, by bending a part of the electrode terminal 11, the interval between the electrode terminal 11 and other members can be ensured. For example, when manufacturing the semiconductor device 100, the filling property of the filling member 10 between the insulating substrate 6 on the lower side of the electrode terminal 11 and the electrode terminal 11 can be improved.

[0059] The electrode terminal 11 is in a plate shape. For example, a member formed by processing a copper plate with a thickness of 0.5 mm into a predetermined shape by etching, punching, etc. can be used as the electrode terminal 11. In addition, the inclined portion 11d of the electrode terminal 11 can be formed by inserting a mold by bending, punching, etc., and the method is not particularly limited as long as the required inclination (inclination) can be formed. As the material of the electrode terminal 11, a plate-shaped member such as aluminum, aluminum alloy, or copper alloy can also be used.

[0060] The bonding wire 9 electrically connects the metal layer 4 or the semiconductor element 7 to the electrode terminal 11. The bonding wire 9 is, for example, a wire made of an aluminum alloy or a copper alloy with a wire diameter of 0.1 to 0.5 mm. In addition, as the bonding wire 9, a wire of a desired thickness (size) can be used according to the current density of the semiconductor element 7, etc., and the desired number of wires can be set. In addition, although the bonding wire 9 is used for connection here, a belt (plate-like member) can also be used for connection. In addition, as a method or structure for joining the bonding wire 9 to the joined part, molten metal joining by melting a metal sheet such as copper or tin, ultrasonic joining, etc. can be used. As long as the method / structure can supply the required current and voltage to the semiconductor element 7, there is no particular limitation.

[0061] In order to ensure the insulation inside the semiconductor device 100, the filling member 10 is filled in the area surrounded by the housing member 2 and the base plate 1. The filling member 10 seals the insulating layer 3, the metal layers 4 and 5, the semiconductor element 7, the bonding wire 9, and a part of the electrode terminal 11. As the filling member 10, a silicone product such as silicone gel is used, but it is not limited to this, and it can also be a resin to which an inorganic filler with excellent thermal conductivity such as alumina and silica is added. In addition, as the resin, it can be a material such as epoxy resin, phenolic resin, polyimide resin, etc. that has the desired insulation, heat resistance, and adhesiveness.

[0062] During the defoaming treatment of the filling member 10, when the semiconductor device 100 is not arranged on a flat plane but on an inclined surface, the bubbles in the filling member 10 move to the upper side of the inclined surface, but when the viscosity of the filling member 10 before the curing treatment (uncured) is low, the filling member 10 may leak from the inside of the shell member 2 to the outside during the defoaming treatment. In addition, when the viscosity of the filling member 10 is high, it does not leak from the inside of the shell member 2 to the outside, but it cannot be filled into the narrow gap area such as between the components, and cannot play the role of the filling member 10. Therefore, as the filling member 10, the material is limited and the freedom of selection is impaired. However, in the present embodiment 1, the defoaming treatment of the filling member 10 is performed by arranging the semiconductor device 100 on a plane. As for the viscosity (viscosity) of the filling member 10 in this case, since the semiconductor device 100 is arranged on a flat plane, there is no restriction on the viscosity of the filling member 10 as described above, and it can be freely selected so as to have both insulation, heat resistance, and adhesion.

[0063] A cover member (not shown) is used as needed and is disposed on the upper side of the housing member 2 (the side opposite to the base plate 1). The cover member separates the inside of the semiconductor device from the outside to prevent dust and the like from entering the inside of the semiconductor device. The cover member is fixed to the housing member 2 by an adhesive (not shown) or screws (not shown).

[0064] Next, refer to Figure 2 The functions and effects of the electrode terminal 11 according to the first embodiment will be described.

[0065] exist Figure 2 In the embodiment, the electrode terminal 11 turns to the upper surface side of the filling member 10 inside the filling member 10. The portion where the electrode terminal 11 turns is the inclined portion 11d. From a structural point of view, the inclined portion 11d of the electrode terminal 11 turns to the upper surface side of the filling member 10 in a cross section in a direction connecting one end of the electrode terminal 11 and the other end of the electrode terminal 11. In other words, the inclined portion 11d of the electrode terminal 11 turns to the upper surface side of the filling member 10 in a cross section in a direction connecting the joint portion 11a and the terminal portion 11g. From an electrical characteristic point of view, the inclined portion 11d of the electrode terminal 11 is inclined toward the upper surface side of the filling member 10 in a cross section in the same direction (parallel direction) as the direction of the current flowing through the electrode terminal 11. That is, the inclined portion 11d of the electrode terminal 11 is a structure that turns (inclins) toward the upper surface side of the filling member 10 as it moves from one end to the other end. For example, in Figure 2 In the embodiment, the inclined portion 11d of the electrode terminal 11 is inclined in such a manner that the distance from the surface of the insulating substrate 6 is farther away from the metal layer 4 toward the case member 2, and the distance from the upper surface of the filling member 10 is closer. Here, in the electrode terminal 11, the current flows between the joint portion 11a and the terminal portion 11g of the electrode terminal 11.

[0066] In the manufacturing process of the semiconductor device 100, a filling member 10 having a predetermined viscosity is filled in the area surrounded by the base plate 1 and the housing member 2. At this time, an insulating substrate 6 is arranged in the area surrounded by the base plate 1 and the housing member 2, wherein the surface of the base plate 1 is bonded to the metal layer 5 on the back side of the insulating substrate 6 using a bonding material 8. The semiconductor element 7 is bonded to the metal layer 4 on the surface side of the insulating substrate 6 at a predetermined position using the bonding material 8. In addition, the plurality of metal layers 4 and the semiconductor element 7 are electrically connected using bonding wires 9. Furthermore, an electrode terminal 11 is bonded to a predetermined position of the metal layer 4.

[0067] Next, the semiconductor device 100 filled with the filling member 10 is subjected to a defoaming treatment in order to remove (exhaust) bubbles remaining in the filling member 10. Generally, the defoaming treatment is performed by placing the semiconductor device 100 on a plane in a defoaming treatment apparatus so that the upper surface of the filling member 10 becomes flat, and setting the defoaming treatment apparatus to a reduced pressure state.

[0068] After the defoaming treatment, a curing treatment is performed to cure the filling member 10 , and a cover member is disposed on the upper side of the case member 2 as necessary, thereby completing the semiconductor device 100 .

[0069] In the above-mentioned defoaming treatment process, when the electrode terminal 11 inside the filling member 10 is not in a shape inclined toward the upper surface side of the filling member 10 (the electrode terminal 11 has a flat portion), it is likely that bubbles generated at the lower side of the electrode terminal 11 in the filling member 10 rise toward the upper surface side of the filling member 10 due to buoyancy or the like and remain on the lower surface side of the flat portion of the electrode terminal 11. When the semiconductor device 100 is operated in a state where bubbles remain on the lower surface side of the flat portion of the electrode terminal 11, the temperature of the semiconductor device 100 itself or the electrode terminal 11 rises, and the bubbles expand as the ambient temperature rises.

[0070] Therefore, peeling occurs between the electrode terminal 11 and the filling member 10 near the lower surface side of the flat portion of the electrode terminal 11 where the bubbles remain. In addition, when the bubbles expand and the peeling spreads, insulation breakdown occurs, for example, between the electrode terminal 11 and the metal layer 5 of the insulating substrate 6 or between the electrode terminal 11 and the base plate 1, and the reliability of the semiconductor device 100 is deteriorated. Furthermore, even if the insulation breakdown of the semiconductor device 100 does not occur, it is generally believed that the appearance of the semiconductor device 100 is poor due to the expansion of bubbles. In addition, it is generally believed that when the electrode terminal 11 has a shape that is in contact with the inner wall of the shell member 2, bubbles remain in the filling member 10 at the contact portion between the electrode terminal 11 and the inner wall of the shell member 2. In this case, peeling also occurs between the electrode terminal 11 and the filling member 10 at the contact portion between the electrode terminal 11 and the shell member 2. As a result, the reliability of the semiconductor device 100 is deteriorated.

[0071] However, in the first embodiment, since the inclined portion 11d of the electrode terminal 11 is bent toward the upper surface side of the filling member 10, bubbles generated in the filling member 10 do not stay at the lower portion of the electrode terminal 11 but can move (rise) toward the upper surface side of the filling member 10 along the inclined portion 11d of the electrode terminal 11. Therefore, bubbles can escape from the upper surface of the filling member 10 to the outside, and peeling at the interface between the electrode terminal 11 and the filling member 10 due to the remaining bubbles can be suppressed. As a result, poor insulation and poor appearance of the semiconductor device 100 can be prevented.

[0072] In addition, the leg portion 11f formed continuously from the bent portion 11e of the inclined portion 11d of the electrode terminal 11 is arranged separately from the inner wall of the case member 2, so that the bubbles rising along the inclined portion 11d of the electrode terminal 11 do not remain inside the filling member 10 near the inner wall of the case member 2 but can rise to the upper surface side of the filling member 10. Therefore, the bubbles can escape from the upper surface of the filling member 10 to the outside, and the peeling at the interface between the electrode terminal 11 and the filling member 10 caused by the remaining bubbles can be suppressed. As a result, poor insulation and poor appearance of the semiconductor device 100 can be prevented.

[0073] Figure 3 It is a schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the first embodiment of the present invention. Figure 4 Schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the first embodiment of the present invention. In the figure, the electrode terminal 11 includes a bonding portion 11a, leg portions 11b, 11f, bent portions 11c, 11e, an inclined portion 11d, and a terminal portion 11g.

[0074] The inclined portion 11d of the electrode terminal 11 may be straight (linear) and bend to the upper surface side of the filling member 10 so that bubbles can move. Preferably, the inclined portion 11d of the electrode terminal 11 forms an angle of 5 degrees or more and 90 degrees or less with the surface of the insulating substrate 6. In addition, the inclined portion 11d of the electrode terminal 11 is not limited to a straight plane, as long as bubbles do not remain on the lower surface side of the electrode terminal 11 and can move along the inclined portion 11d of the electrode terminal 11 to the upper surface side of the filling member 10, and can be as follows: Figure 3 The shapes shown have continuous inclined surfaces and inclined step-like shapes (multi-step shapes).

[0075] Furthermore, it can be Figure 4 The lower surface side of the electrode terminal 11 shown in FIG. 1 has a convex curvature (convex on the surface side of the insulating substrate 6). In addition, as long as the bubbles do not remain on the lower surface side of the electrode terminal 11 and can move along the shape of the electrode terminal 11 to the upper surface side of the filling member 10, it is also possible to Figure 4 On the contrary, it is a (curved) shape having a convex curvature on the upper surface side of the electrode terminal 11 .

[0076] Furthermore, the inclination angle of the inclined portion 11d of the electrode terminal 11 does not need to be constant. For example, it may be a combination of inclined portions having multiple angles, may have multiple curvatures, or may be a combination of shapes having convex curvatures on the upper surface or lower surface of the electrode terminal, as long as the bubbles generated inside the filling member 10 can move toward the upper side of the filling member 10 along the inclined portion 11d.

[0077] Figure 5 Schematic diagram of the cross-sectional structure of another semiconductor device according to the first embodiment of the present invention. In the figure, the semiconductor device 200 includes a base plate 1, a housing member 2, an insulating substrate 6, a semiconductor element 7, a bonding material 8, a bonding wire 9, a filling member 10, and an electrode terminal 11 as a metal member. Figure 5, two (sheet) electrode terminals 11 are arranged in parallel up and down to be used as parallel plates. The corresponding parts of the upper and lower electrode terminals 11 are the same parts, and for convenience, the lower electrode terminal 11 is given a reference numeral.

[0078] like Figure 5 As shown, in the semiconductor device 200, due to electrical design, two (sheet) electrode terminals 11 are sometimes arranged in parallel. By setting such an electrode terminal structure, even if the amount of current (current density) flowing through one electrode terminal 11 is the same, the amount of current flowing through the electrode terminal 11 can be increased without increasing the size of the semiconductor device. Alternatively, when the amount of current flowing through the electrode terminal 11 is the same, the current density of one electrode terminal 11 can be reduced. By setting such a structure, heat generation during operation of the semiconductor device can be suppressed.

[0079] Even in the case of such a structure, since the inclined portion 11d of the electrode terminal 11 is bent to the upper surface side of the filling member 10, not only can the parallel flat plate state be maintained, but also the bubbles on the lower surface side of the electrode terminal 11 can rise along the inclined portion 11d of the electrode terminal 11, and a semiconductor device without bubbles remaining on the lower surface side of the electrode terminal 11 can be manufactured. In addition, although the terminal portion 11g of the electrode terminal 11 is provided on the upper side of the shell member 2 at the outer peripheral portion of the base plate 1, the same effect can be obtained even when the terminal portion 11g of the electrode terminal 11 is formed on the central portion of the insulating substrate 6. In other words, the same effect can be obtained when the terminal portion 11g (the other end) of the electrode terminal 11 is provided on the shell member 2 side more than the joint portion 11a (one end) of the electrode terminal 11 and when the joint portion 11a (one end) of the electrode terminal 11 is provided on the shell member 2 side more than the terminal portion 11g (the other end) of the electrode terminal 11.

[0080] In the semiconductor devices 100, 200 constructed as described above, since the electrode terminal 11 is arranged in the filling member 10 and turned to the upper surface side of the filling member 10, the other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10. Therefore, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling of the filling member 10 and the electrode terminal 11 can be suppressed.

[0081] In addition, the electrode terminal 11 is arranged in the filling member 10 and turned toward the upper surface side of the filling member 10. The other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10. Therefore, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling between the filling member 10 and the electrode terminal 11 is suppressed, which can improve the insulation characteristics and improve the reliability of the semiconductor device.

[0082] Furthermore, the electrode terminal 11 is formed in a shape that is bent toward the upper surface side of the filling member 10 in a cross section in a direction connecting one end of the electrode terminal 11 and the other end of the electrode terminal 11, so that bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and it is possible to suppress the peeling of the filling member 10 and the electrode terminal 11. As a result, by suppressing the peeling of the filling member 10 and the electrode terminal 11, the insulation characteristics can be improved, and the reliability of the semiconductor device can be improved.

[0083] In addition, the electrode terminal 11 is formed in a shape that is bent toward the upper surface of the filling member 10 in a cross section in a direction parallel to the direction of current flow of the electrode terminal 11, so that bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and it is possible to suppress the peeling of the filling member 10 and the electrode terminal 11. As a result, by suppressing the peeling of the filling member 10 and the electrode terminal 11, the insulation characteristics can be improved, and the reliability of the semiconductor device can be improved.

[0084] Furthermore, since the electrode terminals 11 are arranged vertically and are in the shape of parallel plates, when the amount of current flowing through one electrode terminal 11 is the same, the amount of current flowing through the electrode terminal 11 can be increased without increasing the size of the semiconductor device 100. Alternatively, when the amount of current flowing through the electrode terminal 11 is the same, the current density of one electrode terminal 11 can be reduced. By setting such a structure, heat generation during operation of the semiconductor device can be suppressed.

[0085] In addition, since the electrode terminal 11 is arranged in the filling member 10 and turns toward the upper surface side of the filling member 10, the other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10, the freedom of material selection of the filling member 10 is expanded.

[0086] Implementation method 2.

[0087] The second embodiment is different from the first embodiment in that the electrode terminal 11 used in the first embodiment is turned in the filling member 10 in a manner that the electrode terminal 11 is inclined toward the upper surface side of the filling member 10 in a cross section that crosses the direction connecting the one end of the electrode terminal 11 and the other end of the electrode terminal 11. As such, since the electrode terminal 11 is turned toward the upper surface side of the filling member 10 in a cross section that crosses the direction connecting the one end of the electrode terminal 11 and the other end of the electrode terminal 11, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and separation of the filling member 10 and the electrode terminal 11 can be suppressed. As a result, insulation failure of the semiconductor device 300 can be suppressed, and the reliability of the semiconductor device 300 can be improved. In addition, since the distance of the surface (inclined surface) where the inclined portion 11d of the electrode terminal 11 for bubbles to move turns can be shortened, bubbles can be moved from the lower part of the electrode terminal 11 in a short time. In addition, since other aspects are the same as those of the first embodiment, detailed descriptions are omitted.

[0088] Figure 6 Schematic diagram showing the cross-sectional structure of a semiconductor device according to Embodiment 2 of the present invention. In the figure, a semiconductor device 300 includes a base plate 1, a case member 2, an insulating substrate 6, a semiconductor element 7, a bonding material 8, a bonding wire 9, a filling member 10, and an electrode terminal 11 as a metal member. In addition, the electrode terminal 11 includes a bonding portion 11a, leg portions 11b, 11f, bent portions 11c, 11e, an inclined portion 11d, and a terminal portion 11g.

[0089] Figure 7 It is a schematic diagram showing the cross-sectional structure of a metal member of a semiconductor device according to a second embodiment of the present invention. Figure 8 It is a schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the second embodiment of the present invention. Fig. 9 It is a schematic diagram showing the cross-sectional structure of another metal member of the semiconductor device according to the second embodiment of the present invention.

[0090] exist Figure 6 In the figure, the electrode terminal 11 turns to the upper surface side of the filling member 10 inside the filling member 10. The portion where the electrode terminal 11 turns is the inclined portion 11d. From a structural perspective, the electrode terminal 11 turns to the upper surface side of the filling member 10 in a cross section that is transverse (perpendicular to) a direction connecting one end of the electrode terminal 11 and the other end of the electrode terminal 11. In other words, it turns to the upper surface side of the filling member 10 in a cross section that is transverse to a direction connecting a joint portion 11a of the electrode terminal 11 and a terminal portion 11g of the electrode terminal 11. From an electrical characteristic perspective, it turns to the upper surface side of the filling member 10 in a cross section that is transverse to a direction of current flowing through the electrode terminal 11.

[0091] exist Figure 7In the embodiment, the inclined portion 11d of the electrode terminal 11 has a straight line shape that is bent (inclined) in one direction in a cross section that crosses the direction of the current flowing through the electrode terminal 11. Figure 8 In the cross section of the inclined portion 11d of the electrode terminal 11 in the direction transverse to the direction of the current flowing through the electrode terminal 11, the inclined portion 11d of the electrode terminal 11 is convex on the lower surface side of the electrode terminal 11 and has a V-shaped inflection point at one location. Fig. 9 In the figure, the cross section of the inclined portion 11 d of the electrode terminal 11 in the direction transverse to the direction of the current flowing through the electrode terminal 11 is a U-shape formed by a curved line that is convex on the lower surface side of the electrode terminal 11 .

[0092] The electrode terminal 11 is in a plate shape. For example, a copper plate having a thickness of 0.5 mm can be processed into a predetermined shape by etching, punching, etc. The electrode terminal 11 has a shape that is bent toward the upper surface side of the filling member 10 in a cross section that crosses the direction of the current flowing through the electrode terminal 11. Specifically, for example, Figure 7 In the embodiment, when viewed in a direction (vertical direction) that crosses the direction of the current flowing through the electrode terminal 11, the inclined portion 11d of the electrode terminal 11 is in a shape that turns to the upper surface side of the filling member 10, and bubbles generated under the electrode terminal 11 can rise along the turned surface (inclined surface). In addition, in the electrode terminal 11 as in Embodiment 1, the distance of the inclined surface in the direction that crosses the current direction is mostly shorter than that in the direction that is the same as the current direction, and bubbles on the lower surface side of the electrode terminal 11 can be quickly discharged from the lower surface side of the electrode terminal 11 to the outside of the filling member 10.

[0093] Assuming that the inclined portion 11d of the electrode terminal 11 is formed by bending or pressing a plate, the upper and lower surfaces of the electrode plate are parallel. Alternatively, as shown in the first embodiment, the electrode terminal 11 may be arranged in a parallel flat plate shape.

[0094] Even in the case of such a structure, since the electrode terminal 11 is arranged in the filling member 10 and turns to the upper surface side of the filling member 10, and the other end of the electrode terminal 11 is set in a shape exposed from the upper surface of the filling member 10, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling of the filling member 10 and the electrode terminal 11 can be suppressed.

[0095] In the semiconductor device 300 constructed as described above, the electrode terminal 11 is arranged in the filling member 10 and turns to the upper surface side of the filling member 10. The other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10. Therefore, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling of the filling member 10 and the electrode terminal 11 can be suppressed.

[0096] In addition, because the electrode terminal 11 is arranged in the filling member 10 and turns to the upper surface side of the filling member 10, the other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10. Therefore, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling between the filling member 10 and the electrode terminal 11 is suppressed, which can improve the insulation characteristics and improve the reliability of the semiconductor device.

[0097] Furthermore, since the electrode terminal 11 is formed in a shape that turns to the upper surface side of the filling member 10 in a cross section that crosses the direction connecting one end of the electrode terminal 11 and the other end of the electrode terminal 11, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the separation of the filling member 10 and the electrode terminal 11 can be suppressed. In addition, by suppressing the separation of the filling member 10 and the electrode terminal 11, the insulation characteristics can be improved, and the reliability of the semiconductor device can be improved. Furthermore, the moving distance of the bubbles can be shortened, and the bubbles can be removed from the lower surface side of the electrode terminal 11 in a short time.

[0098] In addition, the electrode terminal 11 is formed in a shape that turns toward the upper surface of the filling member 10 in a cross section that crosses the current flow direction of the electrode terminal 11, so that bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling of the filling member 10 and the electrode terminal 11 can be suppressed. Furthermore, by suppressing the peeling of the filling member 10 and the electrode terminal 11, the insulation characteristics can be improved, and the reliability of the semiconductor device can be improved. In addition, the moving distance of the bubbles can be shortened, and the bubbles can be removed from the lower surface side of the electrode terminal 11 in a short time.

[0099] Furthermore, since the two electrode terminals 11 are arranged vertically and in a parallel plate shape, when the amount of current flowing through one electrode terminal 11 is the same, the amount of current flowing through the electrode terminal 11 can be increased without increasing the size of the semiconductor device 300. Alternatively, when the amount of current flowing through the electrode terminal 11 is the same, the current density of one electrode terminal 11 can be reduced. By setting such a structure, it is possible to suppress the heat generated when the semiconductor device is operating.

[0100] In addition, the electrode terminal 11 is arranged in the filling member 10 and turned toward the upper surface side of the filling member 10. The other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10, thereby expanding the freedom of material selection of the filling member 10.

[0101] Implementation method 3.

[0102] In the present embodiment 3, the following aspects are different: the electrode terminal 11 used in the embodiment 1 is provided with a through hole 11h penetrating the electrode terminal 11 in the top view. As such, in the top view, the through hole 11h penetrating the metal member is formed in the electrode terminal 11, so that the bubbles on the lower surface side of the electrode terminal 11 can escape to the upper side of the electrode terminal 11 through the through hole 11h in the process of rising along the inclined portion 11d of the electrode terminal 11, so that the bubbles in the filling member 10 can be discharged to the outside of the filling member 10 more quickly. As a result, the insulation failure of the semiconductor device 400 can be suppressed, and the reliability of the semiconductor device 400 can be improved. In addition, since other aspects are the same as those in the embodiment 1, detailed description is omitted.

[0103] Fig.10 It is a schematic diagram showing a cross-sectional structure of a semiconductor device according to a third embodiment of the present invention. Fig.11 It is a schematic diagram showing a planar structure of a metal member of a semiconductor device according to a third embodiment of the present invention. Fig.12 It is a schematic diagram showing a plan structure of other metal components of the semiconductor device according to the third embodiment of the present invention.

[0104] exist Fig.10 In the embodiment, the semiconductor device 400 includes a base plate 1, a case member 2, an insulating substrate 6, a semiconductor element 7, a bonding material 8, a bonding wire 9, a filling member 10, and an electrode terminal 11 as a metal member.

[0105] exist Fig.10 In the embodiment, the electrode terminal 11 includes a joint portion 11a, leg portions 11b, 11f, bent portions 11c, 11e, an inclined portion 11d, and a terminal portion 11g. The electrode terminal 11 is in a plate-like shape. As the electrode terminal 11, for example, a member obtained by processing a copper plate having a thickness of 0.5 mm into a predetermined shape by etching, punching, etc. can be used.

[0106] The electrode terminal 11 has a through hole 11h formed in the inclined portion 11d. Fig.11 In FIG. 1 , the through hole 11h of the electrode terminal 11 is in a circular shape. Fig.12 In the embodiment, the through hole 11h of the electrode terminal 11 is in the shape of a slit. The shape of the through hole 11h of the electrode terminal 11 is not limited thereto, and may be a polygon such as a quadrilateral. In addition, the larger the size of the through hole 11h or the more the number of through holes 11h, the easier it is for bubbles to escape through the through hole 11h to the top of the electrode terminal 11. The size and number of the through holes 11h of the electrode terminal 11 are not particularly limited as long as they meet the electrical performance of the electrode terminal 11 in the use of the semiconductor device.

[0107] exist Fig.11 , 12In the embodiment, the size of the inclined portion 11d can be changed in a direction that crosses the current flow direction of the inclined portion 11d to match the size of the through hole 11h, so that the current density of the electrode terminal 11 is the same. That is, in the top view, the width of the portion of the inclined portion 11d with the through hole 11h becomes wider than the width of the portion without the through hole 11h. In this way, the current density in the inclined portion 11d can be made uniform.

[0108] In this embodiment 3, if Fig.10 , 11 As shown, when the electrode terminal 11 is viewed from above the semiconductor device (top view), it is in the shape of a through hole 11h that penetrates the inclined portion 11d of the electrode terminal 11. By providing the through hole 11h in the electrode terminal 11, bubbles on the lower surface side of the electrode terminal 11 can escape to the upper side (upper surface side) of the electrode terminal 11 through the through hole 11h during the process of rising in the filling member 10 along the inclined portion 11d of the electrode terminal 11, so that the bubbles in the filling member 10 can be discharged to the outside of the filling member 10 more quickly.

[0109] In addition, in order to facilitate the introduction of bubbles to the through hole 11h, a groove (induction groove, guide) connected to the through hole 11h may be provided on the lower surface of the electrode terminal 11. Furthermore, in order to facilitate the introduction of bubbles around the through hole 11h to the through hole 11h, the periphery of the through hole 11h may be chamfered. In addition, as described in Embodiment 1, the electrode terminal 11 may be configured in a parallel flat plate shape. In this case, the through hole 11h may be arranged on a straight line relative to the upper and lower electrode terminals 11, or may be arranged alternately relative to the upper and lower electrode terminals 11.

[0110] Even in the case of such a structure, since the electrode terminal 11 is arranged in the filling member 10 and turns to the upper surface side of the filling member 10, and the other end of the electrode terminal 11 is separated from the inner wall of the case member 2 and exposed from the upper surface of the filling member 10, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the separation of the filling member 10 and the electrode terminal 11 can be suppressed. In addition, since the through hole 11h is provided in the electrode terminal 11, the moving distance of the bubbles on the inclined surface can be shortened, and the bubbles can be removed from the lower surface side of the electrode terminal 11 in a short time. Therefore, the defoaming treatment for removing bubbles can be performed in a short time.

[0111] In the semiconductor device 400 constructed as described above, since the electrode terminal 11 is arranged in the filling member 10 and turns to the upper surface side of the filling member 10, and the other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling of the filling member 10 and the electrode terminal 11 can be suppressed.

[0112] In addition, since the electrode terminal 11 is arranged in the filling member 10 and turns to the upper surface side of the filling member 10, and the other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10, bubbles do not remain on the lower surface side of the electrode terminal 11 in the filling member 10, and the peeling between the filling member 10 and the electrode terminal 11 is suppressed, which can improve the insulation characteristics and improve the reliability of the semiconductor device.

[0113] Furthermore, since the two electrode terminals 11 are arranged vertically and form a parallel flat plate shape, when the amount of current flowing through one electrode terminal 11 is the same, the amount of current flowing through the electrode terminal 11 can be increased without increasing the size of the semiconductor device 400. Alternatively, when the amount of current flowing through the electrode terminal 11 is the same, the current density of one electrode terminal 11 can be reduced. By setting such a structure, it is possible to suppress the heat generated when the semiconductor device is operating.

[0114] In addition, since the electrode terminal 11 is arranged in the filling member 10 and turns to the upper surface side of the filling member 10, the other end of the electrode terminal 11 is set to be separated from the inner wall of the shell member 2 and exposed from the upper surface of the filling member 10, the freedom of material selection of the filling member 10 is expanded.

[0115] Furthermore, in the top view, the electrode terminal 11 is provided with a through hole 11h that penetrates the electrode terminal 11, so that the bubbles can escape from the position of the through hole 11h toward the upper surface side of the electrode terminal 11 instead of moving from one end side of the electrode terminal 11 inclined toward the upper surface side of the filling member 10 to the other end side, so that the movement distance of the bubbles is shortened and the defoaming treatment can be performed in a short time.

[0116] Implementation method 4.

[0117] This fourth embodiment applies the semiconductor devices of the first to third embodiments to a power conversion device. The present invention is not limited to a specific power conversion device, and the case where the present invention is applied to a three-phase inverter will be described below as a fourth embodiment.

[0118] Fig.13 It is a block diagram showing the configuration of a power conversion system to which a power conversion device according to a fourth embodiment of the present invention is applied.

[0119] Fig.13 The power conversion system shown includes a power supply 1000, a power conversion device 2000, and a load 3000. The power supply 1000 is a DC power supply, and supplies DC power to the power conversion device 2000. The power supply 1000 can be configured in various ways, and can be configured by, for example, a DC system, a solar cell, a storage battery, or can be configured by a rectifier circuit connected to an AC system, an AC / DC converter, etc. In addition, the power supply 1000 can also be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

[0120] The power conversion device 2000 is a three-phase inverter connected between the power source 1000 and the load 3000, converts the DC power supplied from the power source 1000 into AC power, and supplies the AC power to the load 3000. Fig.13 As shown, the power conversion device 2000 includes: a main conversion circuit 2001 that converts DC power input from the power supply 1000 into AC power and outputs it; and a control circuit 2003 that outputs a control signal for controlling the main conversion circuit 2001 to the main conversion circuit 2001.

[0121] Load 3000 is a three-phase motor driven by AC power supplied from power converter 2000. Load 3000 is not limited to a specific use, and is a motor mounted on various electrical devices, such as hybrid vehicles, electric vehicles, railway vehicles, elevators, air conditioning equipment, etc.

[0122] The details of the power conversion device 2000 are described below. The main conversion circuit 2001 includes a switching element and a return diode (not shown) as a semiconductor element 7 built into the semiconductor device 2002. The DC power supplied from the power supply 1000 is converted into AC power by opening and closing the switching element, and supplied to the load 3000. There are various structures as the specific circuit structure of the main conversion circuit 2001. The main conversion circuit 2001 of this embodiment is a 2-level three-phase full-bridge circuit, which can include 6 switching elements and 6 return diodes connected in anti-parallel to each switching element. The main conversion circuit 2001 includes a semiconductor device 2002 corresponding to any of the above-mentioned embodiments 1 to 3, in which each switching element, each return diode, etc. are built. The 6 switching elements are connected in series to form upper and lower branches, and each upper and lower branch constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminal of each upper and lower branch, that is, the three output terminals of the main conversion circuit 2001, is connected to the load 3000.

[0123] In addition, the main conversion circuit 2001 includes a drive circuit (not shown) for driving each switching element. The drive circuit may be built into the semiconductor device 2002, or may be a structure that includes the drive circuit separately from the semiconductor device 2002. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 2001, and supplies it to the control electrode of the switching element of the main conversion circuit 2001. Specifically, according to the control signal from the control circuit 2003 described later, a drive signal for turning the switching element on and a drive signal for turning the switching element off are output to the control electrode of each switching element. When the switching element is maintained in the on state, the drive signal is a voltage signal (on signal) above the threshold voltage of the switching element, and when the switching element is maintained in the off state, the drive signal is a voltage signal (off signal) below the threshold voltage of the switching element.

[0124] The control circuit 2003 controls the switch elements of the main conversion circuit 2001 so that the desired power is supplied to the load 3000. Specifically, based on the power to be supplied to the load 3000, the time (on time) for each switch element of the main conversion circuit 2001 to be in the on state is calculated. For example, the main conversion circuit 2001 can be controlled by PWM control, in which the on time of the switch element is modulated according to the voltage to be output. In addition, a control instruction (control signal) is output to the drive circuit of the main conversion circuit 2001 in such a manner that an on signal is output to the switch element that should be in the on state and an off signal is output to the switch element that should be in the off state at each time point. The drive circuit outputs the on signal or the off signal as a drive signal to the control electrode of each switch element according to the control signal.

[0125] In the power conversion device of the fourth embodiment configured as described above, since the semiconductor devices of the first to third embodiments are applied as the semiconductor device 2002 of the main conversion circuit 2001, it is possible to improve reliability.

[0126] In this embodiment, an example of applying the present invention to a 2-level three-phase inverter is described, but the present invention is not limited thereto and can be applied to various power conversion devices. In this embodiment, although a 2-level power conversion device is used, a 3-level or multi-level power conversion device can also be used. When power is supplied to a single-phase load, the present invention can also be applied to a single-phase inverter. In addition, when power is supplied to a DC load, the present invention can be applied to a DC / DC converter, an AC / DC converter, etc.

[0127] In addition, the power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor, but can also be used as a power supply device for, for example, an electric discharge machine, a laser processing machine, an induction heating cooker, a contactless power supply system, etc., and can further be used as a power conditioner for a solar power generation system, a power storage system, etc.

[0128] In particular, when SiC is used as the semiconductor element 7, the power semiconductor element is operated at a higher temperature than Si in order to exert its characteristics. In semiconductor devices equipped with SiC devices, higher reliability is required, and the advantage of the present invention in realizing a highly reliable semiconductor device becomes more effective.

[0129] It should be understood that the above embodiments are illustrative and non-restrictive in all aspects. The scope of the present invention is not represented by the scope of the above embodiments, but by the claims, including all changes within the meaning and scope equivalent to the claims. In addition, the multiple constituent elements disclosed in the above embodiments can also be appropriately combined to form an invention.

Claims

1. A semiconductor device comprising: An insulating substrate having a front surface and a back surface, and a semiconductor element is bonded to the front surface; A base plate, bonded to the back surface of the insulating substrate; A shell member surrounding the insulating substrate; A filling member having an upper surface, covering the insulating substrate, and filled in a region surrounded by the base plate and the casing member; as well as A plate-shaped metal member is bent inside the filling member to the upper surface side of the filling member, one end of which is joined to the surface of the insulating substrate, and the other end is separated from the inner wall of the shell member and exposed from the upper surface of the filling member, and has a joining portion at the one end, the joining portion is bent to join to the surface of the insulating substrate, and has a terminal portion at the other end, the terminal portion is bent to be connected to the outside, and the metal member has an inclined portion, the inclined portion connecting the bent portion of the one end and the bent portion of the other end, The metal member also has a leg portion, The bent portion of the other end is connected to the terminal portion via the leg portion, and the inclined portion is connected to the terminal portion in a manner that the leg portion is parallel to the inner wall of the housing member. The leg portion is separated from the inner wall of the case member and exposed from the upper surface of the filling member.

2. A semiconductor device comprising: An insulating substrate having a front surface and a back surface, and a semiconductor element is bonded to the front surface; A base plate, bonded to the back surface of the insulating substrate; A shell member surrounding the insulating substrate; A filling member having an upper surface, covering the insulating substrate, and filled in a region surrounded by the base plate and the casing member; as well as A plate-shaped metal member, which is bent to the upper surface side of the filling member in the filling member, one end of which is bonded to the surface of the insulating substrate, and the other end of which is separated from the inner wall of the shell member and exposed from the upper surface of the filling member, and has a terminal portion at the other end, the terminal portion being bent and connected to the outside, the metal member having an inclined portion connecting the bent portion of the one end and the bent portion of the other end, and the metal member is bent to the upper surface side of the filling member in a cross section in a direction transverse to the direction connecting the one end and the other end, The metal member also has a leg portion, The bent portion of the other end is connected to the terminal portion via the leg portion, and the inclined portion is connected to the terminal portion in a manner that the leg portion is parallel to the inner wall of the housing member. The leg portion is separated from the inner wall of the case member and exposed from the upper surface of the filling member.

3. A semiconductor device comprising: An insulating substrate having a front surface and a back surface, and a semiconductor element is bonded to the front surface; A base plate, bonded to the back surface of the insulating substrate; A shell member surrounding the insulating substrate; A filling member having an upper surface, covering the insulating substrate, and filled in a region surrounded by the base plate and the casing member; as well as A plate-shaped metal member, which is bent to the upper surface side of the filling member in the filling member, one end of which is bonded to the surface of the insulating substrate, and the other end of which is separated from the inner wall of the shell member and exposed from the upper surface of the filling member, and has a terminal portion at the other end, the terminal portion is bent and connected to the outside, and the metal member has an inclined portion, the inclined portion connecting the bent portion of the one end and the bent portion of the other end, and current flows through the metal member, and the metal member is bent to the upper surface side of the filling member in a cross section in a direction transverse to the flow direction of the current, The metal member also has a leg portion, The bent portion of the other end is connected to the terminal portion via the leg portion, and the inclined portion is connected to the terminal portion in a manner that the leg portion is parallel to the inner wall of the housing member. The leg portion is separated from the inner wall of the case member and exposed from the upper surface of the filling member.

4. The semiconductor device according to claim 1, wherein The metal member is bent to the upper surface side of the filling member in a cross section in a direction connecting the one end and the other end.

5. The semiconductor device according to claim 1, wherein The metal member is bent to the upper surface side of the filling member in a cross section in a direction transverse to a direction connecting the one end and the other end.

6. The semiconductor device according to claim 1, wherein The metal member is bent to the upper surface side of the filling member in a cross section in the same direction as a direction of a current flowing through the metal member.

7. The semiconductor device according to claim 1, wherein The metal member is bent to the upper surface side of the filling member in a cross section in a direction transverse to a direction of current flowing through the metal member.

8. The semiconductor device according to claim 4, wherein: The distance between the metal member and the upper surface of the filling member becomes closer as it goes from the one end toward the other end.

9. The semiconductor device according to claim 6, wherein: The distance between the metal member and the upper surface of the filling member becomes closer as it goes from the one end toward the other end.

10. The semiconductor device according to any one of claims 4 to 9, wherein: The cross-sectional shape of the metal member is a straight line, a step shape, or a convex curved shape on the upper surface side or the lower surface side of the metal member, and is bent to the upper surface side of the filling member.

11. The semiconductor device according to claim 5 or 7, wherein: The cross-sectional shape of the metal member is a convex V-shape or U-shape on the lower surface side of the metal member and is bent toward the upper surface side of the filling member.

12. The semiconductor device according to any one of claims 1 to 9, wherein: The metal member has portions that are parallel to each other from the one end to the other end.

13. The semiconductor device according to any one of claims 1 to 9, wherein: In a top view, the metal component has a through hole penetrating the metal component.

14. The semiconductor device according to any one of claims 1 to 9, wherein: In the metal member, the other end is located closer to the case member than the one end, or the one end is located closer to the case member than the other end.

15. A power conversion device comprising: A main conversion circuit, comprising the semiconductor device according to any one of claims 1 to 14, the main conversion circuit converting input power and outputting the converted power; and The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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