Transfer device and manufacturing method

Abstract

The present application discloses a transfer device and a manufacturing method thereof, wherein the transfer device comprises a substrate and a transfer layer; the transfer layer comprises a plurality of transfer heads arranged at intervals; wherein a support portion located between the transfer heads is provided on the substrate, and the hardness of the support portion is greater than the hardness of the transfer heads; the present invention arranges the support portion so that when the semi-finished product of the transfer head is patterned, the support portion can play a certain supporting role on the semi-finished product of the transfer head, thereby preventing the semi-finished product of the transfer head from having low patterning accuracy during the process of patterning the transfer head due to the soft material, thereby causing low transfer accuracy of a large number of Micro LED devices, and by arranging the support portion between the plurality of transfer heads, the transfer accuracy of the transfer head is effectively improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a transfer device and a manufacturing method thereof. Background Art

[0002] With the vigorous development of the display industry, Micro light-emitting diode (MicroLED) as a new generation of display technology has the advantages of higher brightness, lower power consumption, better luminous efficiency and longer life compared with the existing Organic Electroluminescence Display (OLED) and Liquid Crystal Display (LCD) technologies.

[0003] In the existing mass transfer of Micro LEDs, the roughness of the contact surface between the transfer head and the micro-light-emitting diodes directly affects the transfer efficiency. The transfer head can be made of patterned polydimethylsiloxane (PDMS) material. PDMS is a viscous organic material in liquid form. When PDMS is used, the main agent and the hardener are usually mixed in a certain mass ratio. However, PDMS is relatively soft, and deformation during use may cause the transfer position of the Micro LED device to shift, affecting the transfer accuracy. Summary of the invention

[0004] The embodiment of the present application provides a transfer device, which can effectively control the patterning accuracy during the patterning process of a semi-finished product by a transfer head, thereby improving the transfer accuracy when the transfer head transfers a MicroLED device.

[0005] The present application provides a transfer device, comprising:

[0006] substrate;

[0007] A transfer layer is disposed on the substrate, and the transfer layer includes a plurality of transfer heads disposed at intervals;

[0008] Wherein, a supporting portion located between the transfer heads is arranged on the substrate, and the hardness of the supporting portion is greater than the hardness of the transfer heads.

[0009] Optionally, the support portion divides the substrate into a plurality of transfer areas that are spaced apart from each other, and a transfer head is disposed in one of the transfer areas.

[0010] Optionally, the support portion includes a plurality of first support sub-portions extending along the first direction and a plurality of second support sub-portions extending along the second direction. The plurality of first support sub-portions and the plurality of second support sub-portions are cross-arranged to divide a plurality of the transfer areas, and a transfer head is provided in a transfer area.

[0011] Optionally, the support portion includes a plurality of support unit portions arranged at intervals, and one of the support unit portions is arranged around one of the transfer heads.

[0012] Optionally, the material of the transfer head includes polydimethylsiloxane, and the material of the support portion includes amorphous silicon dioxide.

[0013] Optionally, in a direction perpendicular to the substrate, a height of the support portion is smaller than a height of the transfer head.

[0014] Optionally, the substrate is provided with a groove, the orthographic projection of the support portion on the substrate is located in the groove, and the thickness of the support portion is greater than the depth of the groove.

[0015] In addition, the present invention also provides a method for manufacturing a transfer device, comprising the following steps:

[0016] providing a substrate;

[0017] A transfer layer is formed on the substrate, the transfer layer comprises a plurality of transfer heads arranged at intervals, and a support portion located between the transfer heads is formed on the substrate, wherein the hardness of the support portion is greater than the hardness of the transfer head.

[0018] Optionally, the step of forming a transfer layer on the substrate, the transfer layer comprising a plurality of transfer heads arranged at intervals, and forming a support portion located between the transfer heads on the substrate, wherein the hardness of the support portion is greater than the hardness of the transfer head, comprises:

[0019] forming a base material layer on the substrate;

[0020] Solidifying the substrate layer to form a plurality of transfer head semi-finished products arranged at intervals and a support portion semi-finished product located between the transfer head semi-finished products;

[0021] The support portion semi-finished product is subjected to a heating treatment to form a support portion, and the transfer head semi-finished product is subjected to a patterning process to form a transfer head.

[0022] Optionally, in the step of curing the substrate layer to form a plurality of transfer head semi-finished products disposed at intervals and a support portion semi-finished product located between each of the transfer head semi-finished products, the substrate layer is cured by heating at a temperature of 85-110° C.;

[0023] In the steps of heating the support portion semi-finished product to form the support portion and patterning the transfer head semi-finished product to form the transfer head, the temperature range of the heat treatment is 200-300°C.

[0024] The beneficial effects of the present invention include at least:

[0025] By arranging a support portion on the transfer layer, the support portion is located between multiple transfer heads, and the hardness of the support portion is greater than the hardness of the transfer head, so that when the transfer head semi-finished product is patterned, the support portion can play a certain supporting role on the transfer head semi-finished product, thereby preventing the transfer head semi-finished product from having low patterning accuracy during the patterning process of the transfer head due to soft material, thereby causing low transfer accuracy of a large number of Micro LED devices. By arranging the support portion between multiple transfer heads, the transfer accuracy of the transfer head is effectively improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 is a schematic diagram of the structure of the transfer device provided in an embodiment of the present application;

[0028] Figure 2 yes Figure 1 A-A' section view;

[0029] Figure 3 is a schematic diagram of the cross-sectional structure of a transfer device provided in an embodiment of the present application;

[0030] Figure 4 is a schematic cross-sectional structure diagram of another transfer device provided in an embodiment of the present application;

[0031] Figure 5 is a schematic cross-sectional structure diagram of another transfer device provided in an embodiment of the present application;

[0032] Figure 6 is a schematic cross-sectional structure diagram of another transfer device provided in an embodiment of the present application;

[0033] Figure 7 is a top view of the structure of another transfer device provided in an embodiment of the present application;

[0034] Figure 8 It is a schematic diagram of the manufacturing process of the transfer device provided in the embodiment of the present application;

[0035] Fig. 9 It is a schematic diagram of the manufacturing process of another transfer device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0037] The present application provides a transfer device and a method for making the same. The following is a detailed description. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order. Various embodiments of the present invention may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which are applicable regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any quoted numbers (fractions or integers) within the indicated range.

[0038] With the booming development of the display industry, Micro LED, as a new generation of display technology, has the advantages of higher brightness, lower power consumption, better luminous efficiency and longer life compared to existing OLED and LCD technologies.

[0039] In the existing mass transfer of Micro LEDs, the roughness of the contact surface between the transfer head and the micro light-emitting diode directly affects the transfer efficiency. The transfer head can be made of patterned PDMS material. PDMS is a viscous organic material in liquid form. When PDMS is used, the main agent and the hardener are usually mixed in a certain mass ratio. However, PDMS is relatively soft, and deformation may cause the transfer position of the Micro LED device to shift during use, affecting the transfer accuracy.

[0040] In order to solve the above technical problems, the present application proposes the following embodiments.

[0041] The present application embodiment provides a transfer device, referring to Figure 1 , Figure 2 and Figure 7 As shown, including:

[0042] substrate 10;

[0043] A transfer layer, disposed on the substrate 10, the transfer layer comprising a plurality of transfer heads 202 disposed at intervals;

[0044] The substrate 10 is provided with a support portion 201 located between the transfer heads 202 , and the hardness of the support portion 201 is greater than the hardness of the transfer head 202 .

[0045] Specifically, the substrate 10 may be a temporary substrate or a glass substrate.

[0046] Specifically, the transfer layer includes a plurality of transfer heads 202 that are spaced apart from each other, and the arrangement of the plurality of transfer heads 202 can be adjusted according to actual production conditions.

[0047] Specifically, the plurality of transfer heads 202 may be evenly spaced apart from each other.

[0048] Specifically, the material of the transfer head 202 includes a substrate, which may include polydimethylsiloxane; in addition to polydimethylsiloxane, the substrate also includes a hardener, and the hardener includes a platinum-containing catalyst, such as commercially available Dow Corning Sylgard 184, wherein the mass ratio of polydimethylsiloxane to the hardener can be 10 to 1:1.

[0049] Specifically, the material of the support part 201 can be amorphous silicon dioxide, and the amorphous silicon dioxide can be obtained by heating the substrate (mainly composed of polydimethylsiloxane) to 200-300° C. and decomposing and rearranging the substrate, and the hardness of the amorphous silicon dioxide is greater than the hardness of the material of the transfer head 202 .

[0050] It can be understood that by providing a support portion 201 on the transfer layer, the support portion 201 is located between multiple transfer heads 202, and the hardness of the support portion 201 is greater than the hardness of the transfer head 202, so that when the transfer head semi-finished product 202a is patterned, the support portion 201 can play a certain supporting role for the transfer head semi-finished product 202a, thereby preventing the transfer head semi-finished product 202a from having low patterning accuracy during the patterning process of the transfer head 202 due to the soft material, thereby resulting in low transfer accuracy of a large number of Micro LED devices. By providing the support portion 201 between multiple transfer heads 202, the transfer accuracy of the transfer head 202 is effectively improved.

[0051] In one embodiment, the support portion 201 divides the substrate 10 into a plurality of transfer areas A1 disposed at intervals, and a transfer head 202 is disposed in each transfer area A1.

[0052] Specifically, Figure 1 and Figure 2 As shown, the support portion 201 forms a mesh structure, and the transfer head 202 is arranged in the transfer area A1, that is, the transfer head 202 is surrounded by the support portion 201, so that when the transfer head semi-finished product 202a is patterned, the four sides of the transfer head 202 can act as a stopper, so that the patterning of the transfer head semi-finished product 202a is more precise, and the transfer accuracy of the obtained transfer head 202 is higher.

[0053] Specifically, the support portion 201 may also be annular, and the support portion 201 is disposed around the periphery of the transfer head semi-finished product 202a, so that the support portion 201 corresponds to the transfer head semi-finished product 202a one by one.

[0054] It can be understood that by arranging support parts 201 around the transfer head 202, the hardness of the support parts 201 is greater than the hardness of the transfer head 202, so that when the transfer head semi-finished product 202a is patterned, the support parts 201 on all sides can support the transfer head semi-finished product 202a, thereby preventing the transfer head semi-finished product 202a from having low patterning accuracy due to the soft material during the patterning process of the transfer head 202, thereby resulting in low transfer accuracy of a large number of Micro LED devices, and further improving the patterning accuracy of the transfer head semi-finished product 202a.

[0055] In one embodiment, the support portion 201 includes a plurality of first support sub-portions extending along a first direction and a plurality of second support sub-portions extending along a second direction. The plurality of first support sub-portions and the plurality of second support sub-portions are cross-arranged to divide a plurality of the transfer areas A1, and a transfer head 202 is provided in one of the transfer areas A1.

[0056] Specifically, the support portion 201 is configured to be in a mesh shape, so that the support portion 201 is more convenient to manufacture and the requirements on the manufacturing process precision of the support portion 201 are relatively low.

[0057] It can be understood that the adoption of this technical solution can, on the one hand, enable the support parts 201 to be set so that when the transfer head semi-finished product 202a is patterned, the support parts 201 on all sides can support the transfer head semi-finished product 202a and improve the transfer accuracy of the transfer head 202. On the other hand, it can also simplify the manufacturing process of the support part 201 and reduce the manufacturing difficulty.

[0058] In one embodiment, the support portion 201 includes a plurality of support units disposed at intervals, and one of the support units is disposed around one of the transfer heads 202 .

[0059] For example, the support portion 201 may also be annular (a support unit portion), and the support unit portion is arranged around the periphery of the transfer head semi-finished product 202a, so that the support portion 201 corresponds to the transfer head semi-finished product 202a one by one.

[0060] It can be understood that the adoption of this technical solution can, on the one hand, enable the support parts 201 to be set so that when the transfer head semi-finished product 202a is patterned, the support parts 201 on all sides can support the transfer head semi-finished product 202a, thereby improving the transfer accuracy of the transfer head 202; on the other hand, when the transfer head 202 is irregularly arranged, the arrangement of multiple support unit parts is the same as that of the transfer head 202, which can save material costs and make the design of the transfer head 202 more flexible.

[0061] In one embodiment, the material of the transfer head 202 includes polydimethylsiloxane, and the material of the support portion 201 includes amorphous silicon dioxide.

[0062] Specifically, the amorphous silicon dioxide can be obtained by heating the substrate (mainly composed of polydimethylsiloxane) to 200-300° C. to decompose and rearrange the substrate, and the hardness of the amorphous silicon dioxide is greater than the hardness of the material of the transfer head 202 .

[0063] Specifically, when PDMS is heated, the methyl groups decompose and the molecular chains rearrange to form amorphous silica. Compared with PDMS, amorphous silica loses its viscosity and increases its hardness.

[0064] It is understandable that by using the same raw material (ie, PDMS) for the transfer head 202 and the support portion 201 , materials of different hardness can be obtained by using different heating temperatures, which greatly reduces the production difficulty of the transfer device.

[0065] In one embodiment, in a direction perpendicular to the substrate 10 , the height of the support portion 201 is smaller than the height of the transfer head 202 .

[0066] Specifically, the height of the support portion 201 refers to the vertical distance between the upper surface of the support portion 201 away from the substrate 10 and the side of the substrate 10 where the support head is set, and the height of the transfer head 202 refers to the vertical distance between the working surface of the transfer head 202 and the side of the substrate 10 where the support head is set.

[0067] It is understandable that by setting the height of the support part 201 to be smaller than the height of the transfer head 202, the working surface of the transfer head 202 and the micro device can be more fully contacted during the transfer of the micro device without being restricted by the support part 201, thereby further improving the transfer accuracy.

[0068] In one embodiment, the substrate 10 is provided with a groove 101 , the orthographic projection of the support portion 201 on the substrate 10 is located in the groove 101 , and the thickness of the support portion 201 is greater than the depth of the groove 101 .

[0069] Specifically, Figure 6 As shown, after the groove 101 is provided, when the support portion 201 and the transfer head 202 are made of the same raw material, a height difference can be naturally formed during the coating process of the raw material, so that the transfer head 202 is higher than the support portion 201 .

[0070] It is understandable that by providing the groove 101, the transfer device can naturally form a staggered structure during the production process, so that the transfer head 202 is higher than the support part 201, which can avoid the subsequent etching process of the support part 201, and the production and operation are simpler.

[0071] In addition, the present application also provides a method for manufacturing a transfer device, such as Figure 8 As shown, the following steps are included:

[0072] S1, providing a substrate 10;

[0073] S2. Form a transfer layer on the substrate 10 , wherein the transfer layer includes a plurality of transfer heads 202 arranged at intervals, and form a support portion 201 between the transfer heads 202 on the substrate 10 , wherein the hardness of the support portion 201 is greater than the hardness of the transfer head 202 .

[0074] Specifically, the substrate 10 may be a temporary substrate 10 or a glass substrate 10 .

[0075] Specifically, the transfer layer includes a plurality of transfer heads 202 that are spaced apart from each other, and the arrangement of the plurality of transfer heads 202 can be adjusted according to actual production conditions.

[0076] Specifically, the plurality of transfer heads 202 may be evenly spaced apart from each other.

[0077] Specifically, the material of the transfer head 202 includes a substrate, which may include polydimethylsiloxane; in addition to polydimethylsiloxane, the substrate also includes a hardener, and the hardener includes a platinum-containing catalyst, such as commercially available Dow Corning Sylgard 184, wherein the mass ratio of polydimethylsiloxane to the hardener can be 10 to 1:1.

[0078] Specifically, the material of the support part 201 can be amorphous silicon dioxide, and the amorphous silicon dioxide can be obtained by heating the substrate (mainly composed of polydimethylsiloxane) to 200-300° C. and decomposing and rearranging the substrate, and the hardness of the amorphous silicon dioxide is greater than the hardness of the material of the transfer head 202 .

[0079] It can be understood that by providing a support portion 201 on the transfer layer, the support portion 201 is located between multiple transfer heads 202, and the hardness of the support portion 201 is greater than the hardness of the transfer head 202, so that when the transfer head semi-finished product 202a is patterned, the support portion 201 can play a certain supporting role for the transfer head semi-finished product 202a, thereby preventing the transfer head semi-finished product 202a from having low patterning accuracy during the patterning process of the transfer head 202 due to the soft material, thereby resulting in low transfer accuracy of a large number of Micro LED devices. By providing the support portion 201 between multiple transfer heads 202, the transfer accuracy of the transfer head 202 is effectively improved.

[0080] In one embodiment, the step of forming a transfer layer on the substrate 10, wherein the transfer layer includes a plurality of transfer heads 202 arranged at intervals, and forming a support portion 201 located between the transfer heads 202 on the substrate 10, wherein the hardness of the support portion 201 is greater than the hardness of the transfer head 202, as shown in FIG. Fig. 9 As shown, including:

[0081] S201, forming a base material layer on the substrate 10;

[0082] S202, solidifying the substrate layer to form a plurality of transfer head semi-finished products 202a arranged at intervals and a support portion 201 semi-finished product located between the transfer head semi-finished products 202a;

[0083] S203 , heating the semi-finished product of the support portion 201 to form the support portion 201 , and patterning the semi-finished product of the transfer head 202 a to form the transfer head 202 .

[0084] Specifically, in step S202, the substrate includes PDMS, and the substrate is cured by heating at a temperature of 85-110°C, specifically, one of 85°C, 90°C, 95°C, 98°C, and 110°C.

[0085] Specifically, in step S203, the semi-finished product of the support part 201 is heated to form the support part 201. The heating method adopted may be laser heating. The specific heating temperature may be 200-300°C, and may be one of 200°C, 210°C, 220°C, 230°C, and 300°C.

[0086] Specifically, Figure 4 As shown, the patterning of the transfer head semi-finished product 202a can be performed by thermal effect engraving, including but not limited to laser engraving, mask etching, relief etching, etc.

[0087] It can be understood that by arranging a support portion 201 on the transfer layer, the support portion 201 is located between multiple transfer heads 202, and the hardness of the support portion 201 is greater than the hardness of the transfer head 202, so that when the transfer head semi-finished product 202a is patterned, the support portion 201 can play a certain supporting role for the transfer head semi-finished product 202a, thereby preventing the transfer head semi-finished product 202a from having low patterning accuracy during the patterning process of forming the transfer head 202 due to the soft material, thereby causing the transfer accuracy of a large number of Micro LED devices to be low. By arranging the support portion 201 between multiple transfer heads 202, the transfer accuracy of the transfer head 202 is effectively improved; by using the same raw material (i.e., PDMS) as the raw material of the transfer head 202 and the raw material of the support portion 201, the transfer head 202 and the support portion 201 can be obtained by setting different heating temperatures, thereby greatly reducing the production difficulty of the transfer device.

[0088] In one embodiment, in the step of curing the substrate layer to form a plurality of transfer head semi-finished products 202a disposed at intervals and a support portion 201 semi-finished product located between each of the transfer head semi-finished products 202a, the substrate layer is cured by heating at a temperature of 85-110°C.

[0089] In the step of heating the semi-finished product of the support part 201 to form the support part 201 and patterning the semi-finished product of the transfer head 202a to form the transfer head 202, the temperature range of the heat treatment is.

[0090] Specifically, the substrate includes PDMS, which will solidify when heated at a temperature of 85-110° C., and will decompose and rearrange to form amorphous silicon dioxide when heated at a temperature of 200-300° C.

[0091] It is understandable that by using the same raw material (i.e., PDMS) for the transfer head 202 and the support part 201, the transfer head 202 and the support part 201 can be obtained by setting different heating temperatures, which greatly reduces the production difficulty of the transfer device.

[0092] In one embodiment, if Figure 3 , Figure 4 or Figure 5 As shown, the support portion 201 may be etched by argon ion beam etching, so that the height of the support portion 201 is smaller than the height of the transfer head 202 in a direction perpendicular to the substrate 10 .

[0093] It is understandable that by setting the height of the support part 201 to be smaller than the height of the transfer head 202, the working surface of the transfer head 202 and the micro device can be more fully contacted during the transfer of the micro device without being restricted by the support part 201, thereby further improving the transfer accuracy.

[0094] In summary, by arranging a support portion 201 on the transfer layer, the support portion 201 is located between multiple transfer heads 202, and the hardness of the support portion 201 is greater than the hardness of the transfer head 202, so that when the transfer head semi-finished product 202a is patterned, the support portion 201 can play a certain supporting role for the transfer head semi-finished product 202a, thereby preventing the transfer head semi-finished product 202a from having low patterning accuracy during the patterning process of the transfer head 202 due to the soft material, thereby causing the transfer accuracy of a large number of Micro LED devices to be low. By arranging the support portion 201 between multiple transfer heads 202, the transfer accuracy of the transfer head 202 is effectively improved.

[0095] The above is a detailed introduction to a transfer device and a manufacturing method thereof provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A transfer device, characterized in that: include: substrate; A transfer layer is disposed on the substrate, the transfer layer comprises a plurality of transfer heads disposed at intervals, and the material of the transfer heads comprises patterned polydimethylsiloxane; A support portion is disposed on the substrate, the support portion is in direct contact with the substrate, the support portion is located between the plurality of transfer heads, the hardness of the support portion is greater than the hardness of the transfer head, the raw material of the support portion is the same as the raw material of the transfer head, the raw material includes polydimethylsiloxane, and the support portion and the transfer head are formed by heating the raw material at different heating temperatures; Wherein, the material of the support portion includes amorphous silicon dioxide, and the amorphous silicon dioxide is obtained by heating, decomposing and rearranging the raw material.

2. The transfer device according to claim 1, characterized in that The support portion divides the substrate into a plurality of transfer areas arranged at intervals, and a transfer head is arranged in one of the transfer areas.

3. The transfer device according to claim 2, characterized in that The support portion includes a plurality of first support sub-portions extending along a first direction and a plurality of second support sub-portions extending along a second direction. The plurality of first support sub-portions and the plurality of second support sub-portions are cross-arranged to divide a plurality of transfer areas, and a transfer head is arranged in one transfer area.

4. The transfer device according to claim 1, characterized in that The support portion includes a plurality of support unit portions which are arranged at intervals, and one of the support unit portions is arranged around one of the transfer heads.

5. The transfer device according to claim 1, characterized in that In a direction perpendicular to the substrate, a height of the supporting portion is smaller than a height of the transfer head.

6. The transfer device according to claim 5, characterized in that The substrate is provided with a groove, the orthographic projection of the support portion on the substrate is located in the groove, and the thickness of the support portion is greater than the depth of the groove.

7. A method for manufacturing a transfer device, characterized in that: The following steps are involved: providing a substrate; forming a base material layer on the substrate, wherein the material of the base material layer comprises polydimethylsiloxane; Solidifying the substrate layer to form a plurality of transfer head semi-finished products arranged at intervals and a support portion semi-finished product located between the transfer head semi-finished products; The supporting part semi-finished product is heated to decompose and rearrange to obtain the supporting part, and the transfer head semi-finished product is patterned to form a transfer head, wherein the hardness of the supporting part is greater than the hardness of the transfer head, the supporting part is in direct contact with the substrate, the material of the transfer head includes polydimethylsiloxane, and the material of the supporting part includes amorphous silicon dioxide, which is obtained by heating, decomposing and rearranging the substrate layer.

8. The method for manufacturing a transfer device according to claim 7, characterized in that: In the step of curing the substrate layer to form a plurality of transfer head semi-finished products arranged at intervals and a support part semi-finished product located between each of the transfer head semi-finished products, the substrate layer is cured by heating at a temperature of 85-110° C.; In the steps of heating the semi-finished product of the support portion to decompose and rearrange it to obtain the support portion, and patterning the semi-finished product of the transfer head to form the transfer head, the heating temperature range is 200-300°C.

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