Laser, laser chip selection method and laser chip temperature control method

Abstract

The embodiments of the present invention provide a laser, a laser chip selection method and a laser chip temperature control method, which relate to the field of semiconductor laser technology. The laser includes a base, a cooling channel, a laser chip assembly and an electrode sheet. The cooling channel is arranged in the base. The laser chip assembly is arranged on the inner wall of the cooling channel. The rated temperature of the laser chip assembly at the same wavelength increases successively along the flow direction of the cooling medium in the cooling channel. The electrode sheet is connected to any two adjacent laser chip assemblies. The chip selection method of the laser can select a laser chip with a suitable wavelength according to the temperature gradient. The laser chip temperature control method can control the overall temperature of the laser chip assembly. The present invention can enhance the heat dissipation effect of the laser chip and stabilize the output wavelength of the laser chip.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor lasers, and in particular to a laser, a laser chip selection method and a laser chip temperature control method. Background Art

[0002] Semiconductor lasers have the advantages of small size, light weight, high reliability, long service life and low cost. They have been widely used in various fields of the national economy, such as semiconductor laser pumped solid lasers or fiber lasers, medical cosmetology and industrial processing.

[0003] The inventors have found through research that the semiconductor laser in the prior art has a poor heat dissipation effect on the laser chip, and the different temperatures of the laser chip cause the output wavelength of the laser chip to be unstable. Summary of the invention

[0004] The objectives of the present invention include, for example, providing a laser, a laser chip selection method and a laser chip temperature control method, which can enhance the heat dissipation effect of the laser chip and stabilize the output wavelength of the laser chip.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] In a first aspect, the present invention provides a laser, comprising:

[0007] Base;

[0008] A cooling channel is disposed in the base;

[0009] A laser chip assembly is arranged on the inner wall of the cooling channel, and the rated temperatures of the plurality of laser chip assemblies at the same wavelength are successively increased along the flow direction of the cooling medium in the cooling channel;

[0010] The electrode sheet is connected to any two adjacent laser chip components.

[0011] In an optional embodiment, the laser chip assembly includes a laser chip and a heat sink assembly;

[0012] The heat sink assembly includes at least two heat sinks;

[0013] The laser chip is sandwiched between the two heat sinks;

[0014] The electrode sheet is connected to any two adjacent heat sink components.

[0015] In an optional embodiment, a temperature sensor is further disposed on the heat sink, and the temperature sensor is used to detect the temperature of the laser chip assembly. The laser further includes a controller, and the controller is used to control the temperature of the laser chip assembly.

[0016] In an optional embodiment, the laser further comprises a heat dissipation assembly, wherein the heat dissipation assembly comprises a heat dissipation block and a plurality of heat dissipation tooth arrays;

[0017] The heat sink is arranged between the laser chip assembly and the cooling channel;

[0018] The heat dissipation tooth array is connected to the heat dissipation block and extends into the cooling channel.

[0019] In an optional embodiment, the heat dissipation tooth array includes a heat dissipation tooth group;

[0020] Any two adjacent groups of heat dissipation tooth groups are arranged in staggered intervals.

[0021] In an optional embodiment, a ceramic sheet is further disposed between the heat dissipation block and the laser chip assembly, and the ceramic sheet is respectively connected to the heat dissipation block and the laser chip assembly.

[0022] In an optional embodiment, the laser further comprises a first electrode block, a second electrode block and an insulating plate;

[0023] The insulating plate is arranged on the base;

[0024] The first electrode block and the second electrode block are respectively disposed on the insulating plate and connected to the electrode sheet.

[0025] In a second aspect, the present invention provides a laser chip selection method, which is applied to the laser as described in any one of the above embodiments, and the steps include:

[0026] Acquire the target wavelength of the laser and the parameters of the cooling medium in the cooling channel of the laser; wherein the parameters of the cooling medium include: mass flow rate and specific heat capacity;

[0027] Determining a first laser chip and a rated temperature thereof based on the target wavelength and parameters of the cooling medium;

[0028] Determining a rated temperature of the nth laser chip based on the rated temperature of the n-1th laser chip and the parameters of the cooling medium;

[0029] Determining the nth laser chip based on the target wavelength, the rated temperature of the nth laser chip, and the relationship between the wavelength and the temperature;

[0030] Wherein, n-1 is a positive integer.

[0031] In an optional implementation, determining the rated temperature of the n-th laser chip based on the rated temperature of the n-1th laser chip and the parameter of the cooling medium includes:

[0032] Determining the temperature rise of the cooling medium from the n-1th laser chip to the nth laser chip according to the rated temperature of the n-1th laser chip and the parameters of the cooling medium;

[0033] Determining the rated temperature of the n-th laser chip according to the rated temperature of the n-1th laser chip and the temperature rise of the cooling medium;

[0034] The wavelength emitted by the nth laser chip at its rated temperature is the target wavelength.

[0035] In an optional embodiment, determining the nth laser chip based on the target wavelength, the rated temperature of the nth laser chip, and the relationship between the wavelength and the temperature includes:

[0036] Determining a temperature rise of the nth laser chip based on a temperature rise of the cooling medium;

[0037] determining an initial temperature of the nth laser chip based on a temperature rise of the nth laser chip and a rated temperature of the nth laser chip;

[0038] Determining a change in the wavelength of the laser emitted by the nth laser chip based on the relationship between the wavelength and the temperature and the temperature rise of the nth laser chip;

[0039] Determining an initial wavelength of the nth laser chip based on a change in the wavelength of the laser emitted by the nth laser chip and the target wavelength;

[0040] The nth laser chip is determined based on the initial wavelength of the nth laser chip and the initial temperature thereof.

[0041] In a third aspect, the present invention provides a laser chip temperature control method, which is applied to the laser as described in any one of the above embodiments, and the steps include:

[0042] Obtaining the operating temperature and the rated temperature of any laser chip in the laser, and determining the temperature difference between the operating temperature and the rated temperature of the laser chip;

[0043] When a plurality of the temperature differences are greater than or equal to a first preset value, and an increase in the absolute value of the temperature difference per unit time is greater than or equal to a second preset value, increasing the flow rate of the cooling medium in the cooling channel until the increase in the absolute value of the temperature difference is less than the second preset value;

[0044] When a plurality of the temperature differences are less than or equal to a third preset value, and an increase in the absolute value of the temperature difference per unit time is greater than or equal to a fourth preset value, reducing the flow rate of the cooling medium in the cooling channel until the increase in the absolute value of the temperature difference is less than the fourth preset value;

[0045] When the increase in the absolute value of the temperature difference of one of the plurality of laser chips is greater than the second preset value or greater than the fourth preset value, it is checked whether the laser chip is damaged.

[0046] The beneficial effects of the embodiments of the present invention include, for example:

[0047] The laser of the present invention is provided with a cooling channel at the laser chip assembly of the ring array. When the laser chip assembly generates heat during operation, the heat can be transferred to the cooling medium of the cooling channel through the heat dissipation assembly, and the heat is taken away by the cooling medium. The laser of the present invention has a strong heat dissipation capacity and enhances the convective heat transfer effect. Furthermore, in the flow direction along the cooling channel, the rated temperature of the laser chip assembly gradually increases, and the higher the junction temperature. Due to the material properties of the semiconductor chip, the wavelength is positively correlated with the chip junction temperature. Therefore, the rated temperature of the laser chip assembly at the same wavelength is set to increase successively along the flow direction of the cooling medium in the cooling channel, that is, the wavelength of the laser chip assembly at room temperature is arranged in a successively decreasing manner, which can make the output wavelength of the laser chip stable when it is working. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0049] Figure 1 A schematic diagram of the structure of a laser provided in an embodiment of the present invention;

[0050] Figure 2 A cross-sectional view of a laser provided by an embodiment of the present invention;

[0051] Figure 3 A schematic diagram of a portion of the structure of a laser provided in an embodiment of the present invention;

[0052] Figure 4 for Figure 3 Enlarged view of part A in the middle.

[0053] Icon: 100-laser; 10-base; 11-water inlet; 12-water inlet channel; 13-cooling channel; 14-water outlet channel; 15-water outlet; 16-connecting channel; 20-laser chip assembly; 21-laser chip; 22-heat sink; 23-electrode sheet; 241-first electrode block; 242-second electrode block; 25-insulating plate; 26-insulating block; 27-positioning block; 30-heat dissipation assembly; 31-heat dissipation block; 32-heat dissipation teeth; 33-ceramic sheet. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0055] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0056] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0057] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear to indicate an orientation or position relationship, they are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the product of the invention is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0058] In addition, the terms “first”, “second”, etc., if used, are merely used to distinguish between the descriptions and should not be understood as indicating or implying relative importance.

[0059] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0060] Please refer to Figure 1 and Figure 2 This embodiment provides a laser 100 , which includes a base 10 and a laser chip assembly 20 .

[0061] A cooling channel 13 is provided in the base 10. The cooling channel 13 is used to pass a cooling medium. A water inlet 11 and a water outlet 15 are provided at both ends of the cooling channel 13. Specifically, in the present embodiment, the two ends of the cooling channel 13 are connected to a water inlet channel 12 and a water outlet channel 14, respectively. The water inlet channel 12 is provided in the base 10 and is connected to the water inlet 11 on the base 10. The water outlet channel 14 is provided in the base 10 and is connected to the water outlet 15 on the base 10. It can be understood that the cooling medium enters the water inlet channel 12 from the water inlet 11, exchanges heat through the annular cooling channel 13, and finally passes into the water outlet channel 14, and is discharged from the water outlet 15 to take away the heat. By continuously inputting the cooling medium, the heat of the laser 100 can be continuously dissipated. In the present embodiment, the cooling medium is a coolant.

[0062] The laser chip assembly 20 is arranged on the inner wall of the cooling channel 13. In this embodiment, a plurality of laser chip assemblies 20 are arranged. The plurality of laser chip assemblies 20 are arranged in sequence along the direction of the cooling channel 13. Specifically, the cooling channel 13 is annular, and the plurality of laser chip assemblies 20 are arranged in an annular array. The laser 100 further includes an electrode sheet 23, which is connected to any two adjacent laser chip assemblies 20 for energizing the laser chip assemblies 20.

[0063] Please refer to Figure 3 , further, the laser chip assembly 20 also includes a laser chip 21. In the present embodiment, the laser chips 21 are in a ring array, and the laser chips 21 are used to emit lasers to the ring center of multiple laser chip assemblies 20. It can be understood that the laser chips 21 are arranged in a ring array, and the laser chips 21 are at a certain angle so that the laser chips 21 face the ring center. Specifically, in the present embodiment, the number of laser chip assemblies 20 is thirteen. Correspondingly, the number of heat sinks 31 is also thirteen. The thirteen heat sinks 31 are connected in sequence to form a ring. The laser chip assemblies 20 are respectively mounted on the planes of the heat sinks 31 so that the laser chips 21 face the ring center, so that the laser chips 21 emit lasers to the ring center.

[0064] In order to stabilize the output wavelengths of multiple laser chips 21, the rated temperature of the laser chip assembly 20 at the same wavelength increases in sequence along the flow direction of the cooling medium in the cooling channel 13. Specifically, in the flow direction of the cooling medium along the cooling channel 13, the wavelengths of the laser chips 21 at room temperature are arranged in descending order. It can be understood that in the flow direction of the cooling medium, since the cooling channel 13 is arranged in a linear annular shape, the temperature of the cooling medium increases when it flows in the cooling channel 13, and the rated temperature of the laser chip 21 gradually increases. The higher the junction temperature, the greater the temperature change. Due to the material properties of the semiconductor chip, the wavelength is positively correlated with the chip junction temperature. Therefore, the temperature change of the laser chip 21 in the flow direction of the cooling channel 13 increases, and the wavelength change increases. That is, the wavelength change of the laser chip 21 near the water inlet 11 is small, and the wavelength change of the laser chip 21 near the water outlet 15 is large. The wavelength of the laser chip 21 at room temperature is arranged in descending order from the water inlet 11 to the water outlet 15. When all the laser chips 21 are in operation, the wavelengths of all the laser chips 21 should be close to a stable value (ie, the wavelength emitted by any laser chip 21 is the target wavelength), so that the output wavelength of the laser chip 21 is stable during operation.

[0065] Please refer to Figure 4 Further, the laser chip assembly 20 also includes a heat sink assembly. The heat sink assembly includes at least two heat sinks 22. The laser chip 21 is sandwiched between the two heat sinks 22. The electrode sheet 23 is connected to any two adjacent heat sink assemblies. Both ends of the electrode sheet 23 are respectively connected to the heat sink 22. It can be understood that the shape of the heat sink 22 is consistent with the shape of the laser chip 21. The heat sink 22 can maximize the heat dissipation area of ​​the laser chip 21 and improve the heat dissipation effect.

[0066] Furthermore, a temperature sensor (not shown) is also provided on the heat sink 22 for real-time monitoring of the temperature change of the laser chip 21. The laser 100 also includes a controller (not shown). The controller is used to control the temperature of the laser chip assembly 20. When the temperature is too high or too low, the temperature of the laser chip 21 is automatically adjusted by the controller to ensure that the wavelength output by the laser chip 21 is stable. For example, when the temperature data detected by the temperature sensor of one of the laser chips 21 is too high, the temperature data of all the laser chips 21 are retrieved to determine whether the temperature of all the laser chips 21 is generally high. If the overall temperature is high, the controller speeds up the flow rate of the cooling medium in the cooling channel 13, reduces the rated temperature of the overall laser chip 21, and ensures that the wavelength output by the laser chip 21 is stable.

[0067] Please refer to Figure 2 and Figure 3In this embodiment, the laser 100 also includes a heat dissipation assembly 30. The heat dissipation assembly 30 is arranged between the cooling channel 13 and the laser chip assembly 20, and is used to transfer the heat of the laser chip assembly 20 to the cooling channel 13. The heat dissipation assembly 30 includes a heat dissipation block 31 and a plurality of heat dissipation tooth arrays. The heat dissipation block 31 is arranged between the laser chip assembly 20 and the cooling channel 13. The heat dissipation tooth array is connected to the heat dissipation block 31 and extends into the cooling channel 13. The heat dissipation block 31 is fixedly connected to the base 10. The heat dissipation tooth array is fixedly connected to the heat dissipation block 31. The heat dissipation block 31 is used to transfer the heat generated by the operation of the laser chip assembly 20 to the cooling medium in the cooling channel 13 through the heat dissipation tooth array.

[0068] The heat dissipation tooth array and the laser chip assembly 20 are respectively arranged on both sides of the heat dissipation block 31. The heat dissipation tooth array extends into the cooling channel 13. It can be understood that the heat dissipation tooth array increases the contact area with the cooling medium in the cooling channel 13. Specifically, the heat dissipation tooth array includes a heat dissipation tooth group. It can be understood that the heat dissipation tooth group includes a plurality of heat dissipation teeth 32 arranged laterally, that is, the heat dissipation tooth group is a row of heat dissipation teeth 32. The heat dissipation tooth array includes multiple rows of heat dissipation teeth 32. Any two adjacent groups of heat dissipation tooth groups are arranged at intervals. It can be understood that the heat dissipation teeth 32 in two adjacent rows are staggered. That is to say, in the present embodiment, the number of heat dissipation teeth 32 is multiple, the heat dissipation tooth array is multiple rows, the intervals between the heat dissipation teeth 32 in the same row are consistent, and the heat dissipation teeth 32 in two adjacent rows are staggered. It can be understood that the staggered arrangement of the heat dissipation teeth 32 can increase the heat transfer area, reduce fluid disturbance, and improve the heat dissipation effect.

[0069] Optionally, in this embodiment, the inner wall of the cooling channel 13 is formed by connecting the heat sink 31. In other embodiments, the heat sink 31 can be fixed on the inner wall of the cooling channel 13, and the heat sink teeth 32 can be inserted into the cooling channel 13 through the inner wall of the cooling channel 13. The present invention does not limit the form of the heat sink 31.

[0070] Furthermore, the length of the heat dissipation tooth 32 is consistent with the inner wall width of the cooling channel 13. It is understandable that the end of the heat dissipation tooth 32 away from the heat dissipation block 31 abuts against the inner wall of the cooling channel 13, increasing the contact area between the cooling medium and the heat dissipation medium and improving the heat dissipation effect.

[0071] Please refer to Figure 3 A ceramic sheet 33 is also provided between the heat sink 31 and the laser chip assembly 20. The ceramic sheet 33 is fixedly connected to the heat sink 31 and the laser chip assembly 20, respectively. It can be understood that the ceramic sheet 33 plays a role in heat dissipation and insulation, and at the same time ensures the heat transfer effect between the laser chip assembly 20 and the heat sink 31, and prevents the laser chip assembly 20 and the heat sink 31 from conducting electricity.

[0072] Furthermore, a positioning block 27 is also provided on the ceramic sheet 33. The positioning block 27 abuts against the laser chip assembly 20 to position the laser chip assembly 20. It is understandable that when the laser chip assembly 20 is fixedly connected to the ceramic sheet 33, the laser chip assembly 20 abuts against the positioning block 27, so that the multiple laser chip assemblies 20 are located in the same plane, so that the lasers emitted by the laser chips 21 intersect within the same point range of the same plane.

[0073] Please refer to Figure 1 The laser 100 further includes a first electrode block 241, a second electrode block 242 and an insulating plate 25. The insulating plate 25 is disposed on the base 10. The first electrode block 241 and the second electrode block 242 are respectively disposed on the insulating plate 25 and connected to the electrode sheet 23. The first electrode block 241 and the second electrode block 242 are used to connect an external power source, and power is supplied to the laser chip assembly 20 through the electrode sheet 23.

[0074] Specifically, in the present embodiment, a plurality of laser chip assemblies 20 are arranged in a ring. Adjacent laser chip assemblies 20 are connected by electrode sheets 23. A connecting channel 16 is provided on the base 10, and a lead wire is arranged in the connecting channel 16, and the two ends of the lead wire are respectively connected to the electrode sheet 23 and the first electrode block 241, or to the electrode sheet 23 and the second electrode block 242. It can be understood that since the laser chip assembly 20 is arranged in a ring, the first electrode block 241 and the second electrode block 242 are close to each other. In the present embodiment, an insulating block 26 is also provided between the first electrode block 241 and the second electrode block 242. The insulating block 26 is fixed on the insulating plate 25.

[0075] This embodiment further provides a laser chip selection method, which is applied to the above-mentioned laser 100, and the steps include:

[0076] S1. Obtain the target wavelength of the laser 100 and the parameters of the cooling medium in the cooling channel 13 of the laser 100; wherein the parameters of the cooling medium include: mass flow rate and specific heat capacity.

[0077] It is easy to understand that the target wavelength of the laser 100 is the wavelength that the multiple laser chips 21 in the laser 100 need to reach when working. The target wavelength can be set as needed. The purpose of the chip selection method of the laser 100 of this embodiment is to make the wavelengths emitted by the selected multiple laser chips 21 at their operating temperature approach the target wavelength.

[0078] S2. Determine the first laser chip 21 and its rated temperature based on the target wavelength and the parameters of the cooling medium.

[0079] It can be understood that a plurality of laser chips 21 are arranged in the laser 100 along the flow direction of the cooling medium in the cooling channel 13. The first laser chip 21 refers to the first laser chip 21 arranged along the flow direction of the cooling medium.

[0080] S3. Determine the rated temperature of the n-th laser chip 21 based on the rated temperature of the n-1th laser chip 21 and the parameters of the cooling medium.

[0081] It can be understood that when n-1 is 1, the rated temperature of the second laser chip 21 is determined based on the rated temperature of the first laser chip 21 and the parameters of the cooling medium. Then n-1 is successively 2, 3, 4, etc. The rated temperatures of the subsequent multiple laser chips 21 along the flow direction of the cooling medium are determined in turn.

[0082] Furthermore, the above step S3 includes:

[0083] S3-1. Determine the temperature rise of the cooling medium from the n-1th laser chip 21 to the nth laser chip 21 according to the rated temperature of the n-1th laser chip 21 and the parameters of the cooling medium.

[0084] Specifically, we can use the formula ΔT=Q chip / (m·cp·Aeff) is calculated. Wherein, ΔT represents the temperature rise of the cooling medium from the n-1th laser chip 21 to the nth laser chip 21. Q chip is the heat generated by a single chip, in W, which is equivalent to the heat dissipated per second. Assume that the power consumption of each chip is P chip In general, the heat generated can be roughly considered equal to the power consumption, that is, Q chip =P chip .

[0085] m is the mass flow rate of the cooling medium, in kg / s. The mass flow rate m can be calculated by the volume flow rate Q vol And the density of the cooling medium ρ is calculated to obtain: m=Q vol· ρ.Q vol It can be calculated by the flow velocity v of the cooling medium and the cross-sectional area A of the cooling channel 13: Q vol =v∙A. cp is the specific heat capacity of the cooling medium, in J / (kg·K). Aeff is the effective heat dissipation area of ​​the cooling medium, i.e., the contact area between the cooling medium and the heat dissipation teeth 32, in m².

[0086] S3-2, determining the rated temperature of the n-th laser chip 21 according to the rated temperature of the n-1th laser chip 21 and the temperature rise of the cooling medium.

[0087] Specifically, the rated temperature of the nth laser chip 21 can be calculated according to the formula T n =T n-1 +ΔT calculation. Where, T n T represents the rated temperature of the nth laser chip 21. n-1 represents the rated temperature of the n-1th laser chip 21 .

[0088] The wavelength emitted by the nth laser chip 21 at its rated temperature is the target wavelength. It can be understood that the wavelengths emitted by the plurality of laser chips 21 at their rated temperature are stabilized at the target wavelength.

[0089] S4. Determine the nth laser chip 21 based on the target wavelength, the rated temperature of the nth laser chip 21 and the relationship between the wavelength and the temperature.

[0090] Wherein, n-1 is a positive integer.

[0091] The above step S4 also includes:

[0092] S4-1. Determine the temperature rise of the nth laser chip 21 based on the temperature rise of the cooling medium. It is understandable that the temperature rise of the nth laser chip 21 refers to the temperature change value of a single laser chip 21, that is, the temperature change value of the laser chip 21 from the initial state to the working state. The temperature rise of the nth laser chip 21 can be expressed by ΔT (n) Indicates. ΔT (n) is equal to the temperature rise of the cooling medium at the nth laser chip 21, that is, the temperature change of the cooling medium.

[0093] S4 - 2 . Determine the initial temperature of the n th laser chip 21 based on the temperature rise of the n th laser chip 21 and the rated temperature of the n th laser chip 21 .

[0094] The initial temperature of the nth laser chip 21 = the rated temperature of the nth laser chip 21 − the temperature rise of the nth laser chip 21 .

[0095] S4 - 3 . Based on the relationship between the wavelength and the temperature and the temperature rise of the n th laser chip 21 , determine the change in the wavelength of the laser emitted by the n th laser chip 21 .

[0096] According to the formula Δλ=k·ΔT (n) Calculate. Where, ΔT (n) represents the temperature rise of the nth laser chip 21. k represents the coefficient of wavelength variation with temperature.

[0097] S4-4: Determine the initial wavelength of the nth laser chip 21 based on the change in the wavelength of the laser light emitted by the nth laser chip 21 and the target wavelength.

[0098] According to the formula λ(n) =λ0-Δλ. Where λ0 represents the target wavelength. (n) represents the initial wavelength of the n-th laser chip 21 .

[0099] S4 - 5 . Determine the n th laser chip 21 based on the initial wavelength and initial temperature of the n th laser chip 21 .

[0100] It can be understood that, according to the initial wavelength corresponding to the laser chip 21 at the initial temperature, the laser chips 21 are selected in sequence so that their initial wavelengths along the flow direction of the cooling medium are arranged in descending order. Also, because the temperature of the cooling medium along its flow direction gradually increases, the wavelength variation of the sequentially arranged laser chips 21 gradually increases, and finally the wavelengths of the multiple laser chips 21 are stabilized at the target wavelength when they are working.

[0101] This embodiment further provides a laser chip temperature control method, which is applied to the above-mentioned laser 100, and the steps include:

[0102] The operating temperature and the rated temperature of any laser chip 21 in the laser 100 are obtained, and the temperature difference between the operating temperature and the rated temperature of the laser chip 21 is determined.

[0103] When multiple temperature differences are greater than or equal to a first preset value, and the increase in the absolute value of the temperature difference per unit time is greater than or equal to a second preset value, the flow rate of the cooling medium in the cooling channel 13 is increased until the increase in the absolute value of the temperature difference is less than the second preset value.

[0104] When multiple temperature differences are less than or equal to the third preset value, and the increase in the absolute value of the temperature difference per unit time is greater than or equal to the fourth preset value, the flow rate of the cooling medium in the cooling channel 13 is reduced until the increase in the absolute value of the temperature difference is less than the fourth preset value.

[0105] It is understandable that what is controlled here is the overall temperature of the laser chip assembly 20 in the laser 100. When the overall temperature of the laser chip 21 of the laser 100 is too high and continues to rise, the controller increases the flow rate of the cooling medium to improve the heat exchange efficiency and achieve cooling of the laser chip 21. When the overall temperature of the laser chip 21 of the laser 100 is too low and continues to fall, the controller reduces the flow rate of the cooling medium, and the heat of the laser chip 21 cannot be taken away in time, thereby increasing the temperature of the laser chip 21.

[0106] When the increase in the absolute value of the temperature difference of one of the plurality of laser chips 21 is greater than the second preset value or greater than the fourth preset value, it is checked whether the laser chip 21 is damaged.

[0107] It is understandable that when the temperature of one or several laser chips 21 is too high or too low, while the temperature of other laser chips 21 is normal, it indicates that the laser chip 21 is abnormal and it is necessary to check whether the laser chip 21 is damaged so as to replace the laser chip 21 in time to ensure the normal operation of the laser 100.

[0108] In summary, the beneficial effects of a laser 100, a laser chip selection method, and a laser chip temperature control method according to an embodiment of the present invention are:

[0109] The present invention sets an annular cooling channel 13 at the laser chip assembly 20 of the annular array. When the laser chip assembly 20 generates heat during operation, the heat can be transferred to the cooling medium of the cooling channel 13 through the heat dissipation assembly 30, and the heat is taken away by the cooling medium. The laser 100 of the present invention has a strong heat dissipation capacity and enhances the convective heat transfer effect. Furthermore, in the flow direction along the cooling channel 13, the rated temperature of the laser chip 21 gradually increases, and the higher the junction temperature. Due to the material properties of the semiconductor chip, the wavelength is positively correlated with the chip junction temperature. Therefore, the rated temperature of the laser chip assembly 20 at the same wavelength is set to increase in sequence along the flow direction of the cooling medium in the cooling channel 13, that is, the wavelength of the laser chip 21 at room temperature is arranged in a sequentially decreasing manner, which can make the output wavelength of the laser chip 21 stable when working.

[0110] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A laser, characterized in that: include: Base; A cooling channel is disposed in the base; A laser chip assembly is arranged on the inner wall of the cooling channel, and the rated temperatures of the plurality of laser chip assemblies at the same wavelength are successively increased along the flow direction of the cooling medium in the cooling channel; The electrode sheet is connected to any two adjacent laser chip components.

2. The laser according to claim 1, characterized in that The laser chip assembly comprises a laser chip and a heat sink assembly; The heat sink assembly includes at least two heat sinks; The laser chip is sandwiched between the two heat sinks; The electrode sheet is connected to any two adjacent heat sink components.

3. The laser according to claim 2, characterized in that The heat sink is also provided with a temperature sensor, which is used to detect the temperature of the laser chip assembly. The laser also includes a controller, which is used to control the temperature of the laser chip assembly.

4. The laser according to any one of claims 1 to 3, characterized in that: The laser also includes a heat dissipation component, which includes a heat dissipation block and a plurality of heat dissipation tooth arrays; The heat sink is arranged between the laser chip assembly and the cooling channel; The heat dissipation tooth array is connected to the heat dissipation block and extends into the cooling channel.

5. The laser according to claim 4, characterized in that The heat dissipation tooth array includes a heat dissipation tooth group; Any two adjacent groups of heat dissipation tooth groups are arranged in staggered intervals.

6. The laser according to claim 4, characterized in that A ceramic sheet is also arranged between the heat dissipation block and the laser chip assembly, and the ceramic sheet is connected to the heat dissipation block and the laser chip assembly respectively.

7. The laser according to claim 1, 5 or 6, characterized in that: The laser also includes a first electrode block, a second electrode block and an insulating plate; The insulating plate is arranged on the base; The first electrode block and the second electrode block are respectively disposed on the insulating plate and connected to the electrode sheet.

8. A laser chip selection method, characterized in that: Applied to the laser according to any one of claims 1 to 7, the steps comprising: Acquire the target wavelength of the laser and the parameters of the cooling medium in the cooling channel of the laser; wherein the parameters of the cooling medium include: mass flow rate and specific heat capacity; Determining a first laser chip and a rated temperature thereof based on the target wavelength and parameters of the cooling medium; Determining a rated temperature of the nth laser chip based on the rated temperature of the n-1th laser chip and the parameters of the cooling medium; Determining the nth laser chip based on the target wavelength, the rated temperature of the nth laser chip, and the relationship between the wavelength and the temperature; Wherein, n-1 is a positive integer.

9. The laser chip selection method according to claim 8, characterized in that: Determining the rated temperature of the n-1th laser chip based on the rated temperature of the n-1th laser chip and the parameters of the cooling medium includes: Determining the temperature rise of the cooling medium from the n-1th laser chip to the nth laser chip according to the rated temperature of the n-1th laser chip and the parameters of the cooling medium; Determining the rated temperature of the n-th laser chip according to the rated temperature of the n-1th laser chip and the temperature rise of the cooling medium; The wavelength emitted by the nth laser chip at its rated temperature is the target wavelength.

10. The laser chip selection method according to claim 9, characterized in that: Determining the nth laser chip based on the target wavelength, the rated temperature of the nth laser chip, and the relationship between the wavelength and the temperature includes: Determining a temperature rise of the nth laser chip based on a temperature rise of the cooling medium; determining an initial temperature of the nth laser chip based on a temperature rise of the nth laser chip and a rated temperature of the nth laser chip; Determining a change in the wavelength of the laser emitted by the nth laser chip based on the relationship between the wavelength and the temperature and the temperature rise of the nth laser chip; Determining an initial wavelength of the nth laser chip based on a change in the wavelength of the laser emitted by the nth laser chip and the target wavelength; The nth laser chip is determined based on the initial wavelength of the nth laser chip and the initial temperature thereof.

11. A laser chip temperature control method, characterized in that: Applied to the laser according to any one of claims 1 to 7, the steps comprising: Obtaining the operating temperature and the rated temperature of any laser chip in the laser, and determining the temperature difference between the operating temperature and the rated temperature of the laser chip; When a plurality of the temperature differences are greater than or equal to a first preset value, and an increase in the absolute value of the temperature difference per unit time is greater than or equal to a second preset value, increasing the flow rate of the cooling medium in the cooling channel until the increase in the absolute value of the temperature difference is less than the second preset value; When a plurality of the temperature differences are less than or equal to a third preset value, and an increase in the absolute value of the temperature difference per unit time is greater than or equal to a fourth preset value, reducing the flow rate of the cooling medium in the cooling channel until the increase in the absolute value of the temperature difference is less than the fourth preset value; When the increase in the absolute value of the temperature difference of one of the plurality of laser chips is greater than the second preset value or greater than the fourth preset value, it is checked whether the laser chip is damaged.

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