Display device and electronic equipment

Abstract

The embodiment of the invention provides a display device and electronic equipment, and relates to the technical field of display equipment, the display device comprises a driving substrate and at least one light-emitting pixel, the light-emitting pixel is located on one side of the driving substrate, and the light-emitting pixel comprises a first light-emitting unit, a second light-emitting unit and a third light-emitting unit, the first light-emitting unit comprises a first light-emitting device; the second light-emitting unit comprises a second light-emitting device and a first quantum dot layer, the light-emitting surface of the second light-emitting device is opposite to the first quantum dot layer, and the second light-emitting device is used for exciting the first quantum dot layer to emit light; the third light-emitting unit comprises a third light-emitting device and a second quantum dot layer, the light-emitting surface of the third light-emitting device is opposite to the second quantum dot layer, and the third light-emitting device is used for exciting the second quantum dot layer to emit light. According to the invention, the space utilization rate can be improved, and the preparation of a high-pixel-density light-emitting device is facilitated.

Description

Technical Field

[0001] The present application relates to the technical field of display devices, and in particular to a display device and an electronic device. Background Art

[0002] With the development of display technology, micro-display devices based on micro light-emitting diode (Micro-LED) technology are considered to be image display technology solutions with great application value and development prospects in the field of augmented reality (AR). Among them, how to achieve color light emission is the technical key point in the field of Micro-LED micro-display.

[0003] However, the prior art cannot make good use of the gaps between the light-emitting units, which is not conducive to improving the pixel density of the display device. Summary of the invention

[0004] In order to overcome the technical problems mentioned in the above technical background, an embodiment of the present application provides a display device, wherein the display device includes:

[0005] Driver substrate;

[0006] At least one light-emitting pixel is located on one side of the driving substrate, the light-emitting pixel includes a plurality of light-emitting devices and at least one quantum dot layer, the quantum dot layer is located between the light-emitting devices, and the quantum dot layer is arranged on the driving substrate.

[0007] In some possible implementations, the display device further includes a light shielding layer, and the light shielding layer is located on at least a portion of an outer surface of the light emitting device except a surface in contact with the driving substrate.

[0008] In some possible implementations, the light-emitting device includes a first light-emitting device, a second light-emitting device, and a third light-emitting device, and the quantum dot layer includes a first quantum dot layer and a second quantum dot layer;

[0009] The light emitting surface of the second light emitting device is opposite to the first quantum dot layer, and the second light emitting device is used to excite the first quantum dot layer to emit light; the light emitting surface of the third light emitting device is opposite to the second quantum dot layer, and the third light emitting device is used to excite the second quantum dot layer to emit light;

[0010] Preferably, the first light-emitting device, the second light-emitting device and the third light-emitting device are all blue light-emitting devices, the first quantum dot layer is a green quantum dot layer, and the second quantum dot layer is a red quantum dot layer;

[0011] Preferably, the first light-emitting device, the first quantum dot layer and the second quantum dot layer emit different colors of light;

[0012] Preferably, the light emitting directions of the first light emitting device, the first quantum dot layer and the second quantum dot layer are in the same direction.

[0013] In some possible implementations, the light shielding layer includes a first light shielding layer, a second light shielding layer and a third light shielding layer, the first light shielding layer is located on at least part of the outer surface of the first light-emitting device except the side away from the driving substrate; the second light shielding layer is located on at least part of the outer surface of the second light-emitting device except the side in contact with the first quantum dot layer; the third light shielding layer is located on at least part of the outer surface of the third light-emitting device except the side in contact with the second quantum dot layer;

[0014] Preferably, the first light-shielding layer is located on the remaining outer surfaces of the first light-emitting device except the side away from the driving substrate; the second light-shielding layer is located on the remaining outer surfaces of the second light-emitting device except the side in contact with the first quantum dot layer; the third light-shielding layer is located on the remaining outer surfaces of the third light-emitting device except the side in contact with the second quantum dot layer.

[0015] In some possible implementations, one side of the driving substrate has a bonding electrode, and the first light-emitting device, the second light-emitting device, and the third light-emitting device are all electrically connected to the bonding electrode; the display device further includes a common electrode layer located on a side of the light-emitting pixel away from the driving substrate;

[0016] At least part of the side surface of the first light-emitting device, at least part of the side surface of the second light-emitting device, at least part of the side surface of the third light-emitting device, at least part of the surface of the first quantum dot layer away from the driving substrate, and at least part of the surface of the second quantum dot layer away from the driving substrate are all provided with an insulating protective layer;

[0017] Preferably, the side surface of the first light-emitting device, the side surface of the second light-emitting device, the side surface of the third light-emitting device, the side of the first quantum dot layer away from the driving substrate, and the side of the second quantum dot layer away from the driving substrate all have an insulating protective layer;

[0018] Preferably, the material of the insulating protection layer includes at least one of aluminum oxide, silicon dioxide, silicon nitride, titanium dioxide, hafnium dioxide or tantalum pentoxide.

[0019] In some possible implementations, one side of the driving substrate has a bonding electrode, and the first light-emitting device, the second light-emitting device, and the third light-emitting device are all electrically connected to the bonding electrode; the display device further includes a common electrode layer located on a side of the light-emitting pixel away from the driving substrate;

[0020] The side surfaces of the first light-emitting device, the side surfaces of the second light-emitting device, the side surfaces of the third light-emitting device, the first quantum dot layer except the side in contact with the driving substrate and the side in contact with the second light-emitting device, and the second quantum dot layer except the side in contact with the driving substrate and the side in contact with the third light-emitting device all have an insulating protective layer.

[0021] In some possible implementations, the light shielding layer is a reflective layer;

[0022] Preferably, the thickness of the reflective layer is in the range of 3nm-15nm;

[0023] Preferably, the material of the reflective layer includes at least one of aluminum, gold, nickel, titanium, palladium or platinum.

[0024] In some possible implementations, the display device further includes a light-shielding ring, which surrounds the light-emitting pixel;

[0025] Preferably, the material of the light-shielding ring includes black matrix glue;

[0026] Preferably, the distance between the side of the light shielding ring away from the driving substrate and the driving substrate is greater than the distance between the side of the light emitting device away from the driving substrate and the driving substrate;

[0027] Preferably, the orthographic projection of the light-shielding ring on the driving substrate is in a circular shape.

[0028] In some possible implementations, the orthographic projection of a side of the light emitting device away from the driving substrate on the driving substrate is located within the orthographic projection of a side of the light emitting device close to the driving substrate on the driving substrate.

[0029] In some possible implementations, the present application also provides an electronic device, including the display device described in the present application.

[0030] Compared with the prior art, this application has the following beneficial effects:

[0031] The present application provides a display device and an electronic device, which can more efficiently utilize the gaps between originally idle light-emitting devices by setting a quantum dot layer in the gap position next to the light-emitting device, thereby improving space utilization and making the pixel structure more compact, which is more conducive to the preparation of display devices with high pixel density. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0033] Figure 1 A schematic diagram showing that the quantum dot layer provided in this embodiment is disposed between light-emitting devices;

[0034] Figure 2 The display device provided in this embodiment includes a schematic diagram of a reflective layer;

[0035] Figure 3 A schematic diagram showing multiple light-emitting devices and multiple quantum dot layers provided in this embodiment;

[0036] Figure 4 A schematic diagram of the reflective layer provided in this embodiment being arranged on the surfaces of multiple light-emitting devices;

[0037] Figure 5 A schematic diagram of the light-emitting unit contact and the insulating protection layer of the display device provided in this embodiment;

[0038] Figure 6 A schematic diagram of a light-emitting unit contact of a display device provided in this embodiment and including an insulating protection layer and a reflective layer;

[0039] Figure 7 A schematic diagram of a light emitting unit provided in this embodiment without contact and including an insulating protective layer;

[0040] Figure 8 A schematic diagram of a light emitting unit provided in this embodiment that is not in contact and includes an insulating protective layer and a reflective layer;

[0041] Fig. 9 The display device provided in this embodiment includes a schematic diagram of a blocking ring;

[0042] Fig.10 A schematic diagram of the structure of the light emitting device provided in this embodiment;

[0043] Fig.11 A schematic diagram of a process for manufacturing a display device provided in this embodiment;

[0044] Fig.12 A schematic diagram of transferring the light emitting device provided in this embodiment to a driving substrate;

[0045] Fig.13 A schematic diagram of providing an insulating protective layer on the outer surface of the light emitting device provided in this embodiment;

[0046] Fig.14 A schematic diagram of removing the corresponding outer surface insulating protective layer of the light emitting device provided in this embodiment;

[0047] Fig.15 A schematic diagram of a process of providing a reflective layer on a display device provided in this embodiment;

[0048] Fig.16 A schematic diagram of a display device after the corresponding reflective layer is removed provided in this embodiment;

[0049] Fig.17 A schematic diagram of a display device after a quantum dot layer is provided between light-emitting devices provided in this embodiment;

[0050] Fig.18 A schematic diagram of the present embodiment after an insulating protective layer is provided on the quantum dot layer.

[0051] Figure numerals: 01, light-emitting device; 02, quantum dot layer; 03, shading layer; 1, driving substrate; 2, first light-emitting device; 3, first quantum dot layer; 4, second light-emitting device; 5, second quantum dot layer; 6, third light-emitting device; 7, first shading layer; 8, second shading layer; 9, third shading layer; 10, bonding electrode; 11, insulating protection layer; 12, common electrode layer; 13, shading ring; 14, n-GaN layer; 15, quantum well layer; 16, p-GaN layer; 17, first electrode; 18, second electrode; 19, reflective layer. DETAILED DESCRIPTION

[0052] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0053] It should be noted that, in the absence of conflict, different features in the embodiments of the present application may be combined with each other.

[0054] At present, the color conversion method based on the photoluminescence characteristics of QD (Quantum Dots) materials is one of the important technical routes for the colorization of micro-display devices in the field of AR applications. QD materials can effectively absorb the blue light emitted by GaN-based Micro-LED devices and convert it into red and green light, thereby achieving red, green and blue light emission.

[0055] In this technical route, the integration method of QD materials and Micro-LED devices will directly affect the final performance of micro-display devices. The effective absorption of blue light by QD materials is an important process to achieve colorization. Usually, QD materials of different colors are coated on the surface of Micro-LED chips to form corresponding color conversion layers. Micro-LED chips excite the QD color conversion layer above them to achieve color luminescence. However, the side light output of Micro-LED devices is also considerable. How to effectively utilize the side light output of Micro-LEDs is one of the keys to improving the light efficiency of Micro-LED color micro-display devices. In addition, it is necessary to avoid the problem of optical crosstalk caused by the side light output of Micro-LED devices exciting the QD materials of adjacent pixels.

[0056] The related technology is to prepare a micro-optical structure containing a curved reflector around the Micro-LED device, and to focus the light reflected from the side of the Micro-LED as much as possible and inject it into the QD layer above the Micro-LED. In this related technology, the micro-optical structure usually occupies a large area around the Micro-LED device, which is not conducive to the preparation of high PPI (pixel density, Pixels Per Inch) micro-display devices. In addition, the red QD material may be re-excited by the light emitted by the green QD material, forming optical crosstalk between adjacent red and green sub-pixels.

[0057] In view of this, see Figure 1 , this embodiment provides a display device that can improve the space utilization between light-emitting devices.

[0058] The display device provided in this embodiment includes a driving substrate 1 and at least one light-emitting pixel, wherein the light-emitting pixel is located on one side of the driving substrate 1, and the light-emitting pixel includes a plurality of light-emitting devices 01 and at least one quantum dot layer 02, wherein the quantum dot layer 02 is located between the light-emitting devices 01, and the quantum dot layer 02 is arranged on the driving substrate 1.

[0059] The driving substrate 1 has a plurality of electrodes that can be electrically connected to the light-emitting pixels, and the driving substrate 1 is electrically connected to at least one light-emitting pixel through the electrodes.

[0060] The light emitting device 01 has two pins, one of which is an anode and the other is a cathode. Both of the pins are electrically connected to electrodes on the driving substrate 1 , so that the light emitting device 01 can be driven to emit light through the driving substrate 1 .

[0061] The light emitted by the light emitting device 01 can be irradiated onto the quantum dot layer 02 and stimulate the quantum dot layer 02 to emit light. At this time, the light emitting device 01 plays a role in stimulating the quantum dot layer 02 to emit light, and the quantum dot layer 02 plays a role in emitting light. The quantum dot layer 02 can be set to different colors, so that different colors of light can be emitted through the quantum dot layer 02 of different colors. The light emitted by the light emitting device 01 can also be directly irradiated out. At this time, the light emitting device 01 plays a role in emitting light.

[0062] Compared to the related art in which the quantum dot layer 02 is coated on the surface of the light-emitting device 01, the quantum dot layer 02 in the present application is located on the driving substrate 1 and is arranged in the gap formed between the light-emitting devices 01. In this way, a side focusing structure is formed, thereby avoiding the preparation of a surface micro-optical structure on the array of light-emitting devices 01, and forming a side focusing structure with the originally idle lateral gap of the light-emitting device 01, thereby improving the space utilization of the display device, making the pixel structure more compact, and more conducive to the preparation of light-emitting devices with high pixel density. At the same time, the quantum dot layer 02 is excited to emit light by light from the side of the light-emitting device 01, avoiding the coating of a thick quantum dot layer 02 on the surface of the array of light-emitting devices 01, which is conducive to reducing the longitudinal volume of the display device, thereby facilitating the preparation of a thinner display device.

[0063] This embodiment arranges the quantum dot layer 02 in the gap position next to the light-emitting device 01, so that the originally idle gap between the light-emitting devices 01 can be more efficiently utilized, thereby improving space utilization, making the pixel structure more compact, and thus being more conducive to the preparation of high pixel density display devices.

[0064] For some possible implementations, see Figure 2 The display device further includes a light shielding layer 03 , and the light shielding layer 03 is located on at least a portion of the outer surface of the light emitting device 01 except a surface in contact with the driving substrate 1 .

[0065] The light emitting device 01 has multiple light emitting surfaces, and the light shielding layer 03 has a light shielding function. Therefore, the light shielding layer 03 can shield at least part of the outer surface except the surface in contact with the driving substrate 1, thereby reducing the light irradiated from the light emitting device 01 to the other light emitting devices 01. In this way, the light crosstalk phenomenon between different light emitting devices 01 and / or different quantum dot layers 02 can be effectively reduced, thereby improving the display quality of the display device.

[0066] For some possible implementations, see Figure 3The light-emitting device includes a first light-emitting device 2, a second light-emitting device 4 and a third light-emitting device 6, and the quantum dot layer includes a first quantum dot layer 3 and a second quantum dot layer 5; the light-emitting surface of the second light-emitting device 4 is opposite to the first quantum dot layer 3, and the second light-emitting device 4 is used to excite the first quantum dot layer 3 to emit light; the light-emitting surface of the third light-emitting device 6 is opposite to the second quantum dot layer 5, and the third light-emitting device 6 is used to excite the second quantum dot layer 5 to emit light.

[0067] The first light emitting device 2 may constitute a first light emitting unit, the second light emitting device 4 and the first quantum dot layer 3 may constitute a second light emitting unit, and the third light emitting device 6 and the second quantum dot layer 5 may constitute a third light emitting unit.

[0068] The colors of the light emitted by the first light emitting device 2, the second light emitting device 4 and the third light emitting device 6 may be the same or different. The light emitted by the first light emitting device 2 is directly emitted through its light emitting surface, wherein the light emitting surface of the first light emitting device 2 may be Figure 3 The first light emitting device 2 is located away from a side of the driving substrate 1 .

[0069] The light emitted by the second light emitting device 4 can be irradiated onto the first quantum dot layer 3 through its light emitting surface, and the light emitted by the second light emitting device 4 excites the first quantum dot layer 3 to emit light, and is irradiated out from the light emitting surface of the first quantum dot layer 3. Figure 3 The contact surface between the first quantum dot layer 3 and the second light emitting device 4, the light emitting surface of the first quantum dot layer 3 can be Figure 3 The first quantum dot layer 3 is located away from a side of the driving substrate 1 .

[0070] The light emitted by the third light emitting device 6 can be irradiated onto the second quantum dot layer 5 through its light emitting surface, and the light emitted by the third light emitting device 6 excites the second quantum dot layer 5 to emit light, and is irradiated out from the light emitting surface of the second quantum dot layer 5. Figure 3 The contact surface between the second quantum dot layer 5 and the third light emitting device 6, the light emitting surface of the second quantum dot layer 5 can be Figure 3 The second quantum dot layer 5 is located away from a side of the driving substrate 1 .

[0071] The heat of the light-emitting device is mainly in the direction of current injection (perpendicular to the direction of the driving substrate 1), and the first quantum dot layer 3 and the second quantum dot layer 5 are arranged on the sides of the first light-emitting device 2 and the second light-emitting device 4, respectively, so as to alleviate the performance attenuation phenomenon caused by the first quantum dot layer 3 and the second quantum dot layer 5 absorbing the heat of the light-emitting device. In addition, the first quantum dot layer 3 and the second quantum dot layer 5 are tightly integrated into the screen structure, so as to alleviate the damage of the first quantum dot layer 3 and the second quantum dot layer 5 by external water and oxygen.

[0072] Preferably, the first light-emitting device 2, the first quantum dot layer 3 and the second quantum dot layer 5 have different luminous colors, and the first light-emitting device 2, the first quantum dot layer 3 and the second quantum dot layer 5 have the same light-emitting direction (for example, Figure 3 The light emitted by the first light emitting device 2, the first quantum dot layer 3 and the second quantum dot layer 5 can be combined to produce light of different colors, thereby satisfying the user's demand for light of different colors.

[0073] Preferably, the first light-emitting device 2, the second light-emitting device 4 and the third light-emitting device 6 are all blue light-emitting devices, the first quantum dot layer 3 is a green quantum dot layer, and the second quantum dot layer 5 is a red quantum dot layer.

[0074] Since the energy of the blue light emitted by the second light emitting device 4 is greater than the energy of the green quantum dot layer, the blue light emitted by the second light emitting device 4 can excite the first quantum dot layer 3 to emit green light. Since the energy of the blue light emitted by the third light emitting device 6 is greater than the energy of the red quantum dot layer, the blue light emitted by the third light emitting device 6 can excite the second quantum dot layer 5 to emit red light; the first light emitting device 2 can emit blue light alone. In this way, one light emitting pixel can emit red light, green light and blue light, so that the display device can produce light of various colors.

[0075] For some possible implementations, see Figure 4 The light-shielding layer 03 includes a first light-shielding layer 7, a second light-shielding layer 8 and a third light-shielding layer 9, the first light-shielding layer 7 is located on at least part of the outer surface of the first light-emitting device 2 except the side away from the driving substrate 1; the second light-shielding layer 8 is located on at least part of the outer surface of the second light-emitting device 4 except the side in contact with the first quantum dot layer 3; the third light-shielding layer 9 is located on at least part of the outer surface of the third light-emitting device 6 except the side in contact with the second quantum dot layer 5.

[0076] The first light shielding layer 7, the second light shielding layer 8 and the third light shielding layer 9 all have a light shielding effect. Therefore, the first light shielding layer 7 can shield at least part of the outer surface of the first light-emitting device 2 except the side away from the driving substrate 1, thereby reducing the light irradiated from the first light-emitting device 2 to the remaining light-emitting devices. The second light shielding layer 8 can shield at least part of the outer surface of the second light-emitting device 4 except the side contacting the first quantum dot layer 3, thereby reducing the light irradiated from the second light-emitting device 4 to the remaining light-emitting devices. The third light shielding layer 9 can shield at least part of the outer surface of the third light-emitting device 6 except the side contacting the second quantum dot layer 5, thereby reducing the light irradiated from the third light-emitting device 6 to the remaining light-emitting devices. In this way, the optical crosstalk phenomenon between the first light-emitting device 2, the second light-emitting device 4, the third light-emitting device 6, the first quantum dot layer 3 and the second quantum dot layer 5 can be effectively alleviated, thereby improving the display quality of the display device.

[0077] Preferably, the first light-shielding layer 7 is located on the remaining outer surfaces of the first light-emitting device 2 except the side away from the driving substrate 1; the second light-shielding layer 8 is located on the remaining outer surfaces of the second light-emitting device 4 except the side in contact with the first quantum dot layer 3; the third light-shielding layer 9 is located on the remaining outer surfaces of the third light-emitting device 6 except the side in contact with the second quantum dot layer 5.

[0078] The first light shielding layer 7 can shield the remaining outer surfaces of the first light emitting device 2 except the side away from the driving substrate 1 (except the side close to the driving substrate 1), so that the light emitted by the first light emitting device 2 can only be emitted from the light emitting surface of the side away from the driving substrate 1. The second light shielding layer 8 can shield the remaining outer surfaces of the side of the second light emitting device 4 in contact with the first quantum dot layer 3 (except the side close to the driving substrate 1), so that the light emitted by the second light emitting device 4 can only be emitted from the side in contact with the first quantum dot layer 3. The third light shielding layer 9 can shield the remaining outer surfaces of the side of the third light emitting device 6 in contact with the second quantum dot layer 5 (except the side close to the driving substrate 1), so that the light emitted by the third light emitting device 6 can only be emitted from the side in contact with the second quantum dot layer 5. In this way, the optical crosstalk between the first light emitting device 2, the second light emitting device 4, the third light emitting device 6, the first quantum dot layer 3 and the second quantum dot layer 5 can be further effectively reduced, thereby further improving the display quality of the display device.

[0079] For some possible implementations, see Figure 5, one side of the driving substrate 1 has a bonding electrode 10, and the first light-emitting device 2, the second light-emitting device 4 and the third light-emitting device 6 are all electrically connected to the bonding electrode 10; the display device also includes a common electrode layer 12 located on the side of the light-emitting pixel away from the driving substrate 1; at least part of the side surface of the first light-emitting device 2, at least part of the side surface of the second light-emitting device 4, at least part of the side surface of the third light-emitting device 6, at least part of the surface of the first quantum dot layer 3 away from the driving substrate 1, and at least part of the surface of the second quantum dot layer 5 away from the driving substrate 1 are all provided with an insulating protective layer 11.

[0080] The driving substrate 1 includes a backplane and a bonding electrode 10 located on one side of the backplane. The backplane may include multiple metal traces and / or multiple driving units for transmitting signals or electrical energy. The metal traces and / or the driving units are electrically connected to the bonding electrodes 10, and the bonding electrodes 10 are electrically connected to the light-emitting device. The metal traces and the driving units can be used to drive the light-emitting device.

[0081] Please see again Figure 5 The first light-emitting device 2, the first quantum dot layer 3, the second light-emitting device 4, the second quantum dot layer 5 and the third light-emitting device 6 can be contacted in sequence, and an insulating protective layer 11 is provided on the side of the first light-emitting device 2, the side of the second light-emitting device 4, the side of the third light-emitting device 6, the side of the first quantum dot layer 3 away from the driving substrate 1 and the side of the second quantum dot layer 5 away from the driving substrate 1. The insulating protective layer 11 has an insulating effect and can prevent a short circuit between the bonding electrode 10 and the common electrode layer 12, thereby improving the quality of the display device.

[0082] Preferably, the side surface of the first light-emitting device 2, the side surface of the second light-emitting device 4, the side surface of the third light-emitting device 6, the side of the first quantum dot layer 3 away from the driving substrate 1, and the side of the second quantum dot layer 5 away from the driving substrate 1 all have an insulating protective layer 11. In this way, a short circuit between the bonding electrode 10 and the common electrode layer 12 can be further prevented, thereby further improving the quality of the display device.

[0083] In some embodiments, see Figure 6, the first light shielding layer 7 is also provided on the outer surface of the insulating protective layer 11 of the first light emitting device 2; the second light shielding layer 8 is provided on the outer surface of the insulating protective layer 11 of the second light emitting device 4 except the side in contact with the first quantum dot layer 3 and on the side of the second light emitting device 4 away from the driving substrate 1; the third light shielding layer 9 is provided on the outer surface of the insulating protective layer 11 of the third light emitting device 6 except the side in contact with the second quantum dot layer 5 and on the side of the third light emitting device 6 away from the driving substrate 1. In this way, the first light shielding layer 7, the second light shielding layer 8 and the third light shielding layer 9 can shield the light emitted by the first light emitting device 2, the first quantum dot layer 3, the second light emitting device 4, the second quantum dot layer 5 and the third light emitting device 6, thereby reducing the corresponding optical crosstalk.

[0084] For some possible implementations, see Figure 7 , the first light-emitting device 2 is not in contact with the first quantum dot layer 3, the first quantum dot layer 3 is in contact with the second light-emitting device 4, the second light-emitting device 4 is not in contact with the second quantum dot layer 5, and the second quantum dot layer 5 is in contact with the third light-emitting device 6. In this way, it is necessary to provide an insulating protective layer 11 on the side of the first light-emitting device 2, the side of the second light-emitting device 4, the side of the third light-emitting device 6, the first quantum dot layer 3 except the side in contact with the driving substrate 1 and the side in contact with the second light-emitting device 4, and the second quantum dot layer 5 except the side in contact with the driving substrate 1 and the side in contact with the third light-emitting device 6, so as to reduce the short circuit risk between the common electrode layer 12 and the bonding electrode 10.

[0085] In some embodiments, see Figure 8 , the first light shielding layer 7 is arranged on the outer surface of the insulating protective layer 11 of the first light emitting device 2, the second light shielding layer 8 is arranged on the outer surface of the insulating protective layer 11 of the second light emitting device 4 except the side in contact with the first quantum dot layer 3 and on the side of the second light emitting device 4 away from the driving substrate 1; the third light shielding layer 9 is arranged on the outer surface of the insulating protective layer 11 of the third light emitting device 6 except the side in contact with the second quantum dot layer 5 and on the side of the third light emitting device 6 away from the driving substrate 1. In this way, the first light shielding layer 7, the second light shielding layer 8 and the third light shielding layer 9 can shield the light emitted by the first light emitting device 2, the first quantum dot layer 3, the second light emitting device 4, the second quantum dot layer 5 and the third light emitting device 6, thereby reducing the corresponding optical crosstalk.

[0086] Preferably, the material of the insulating protective layer 11 includes at least one of aluminum oxide, silicon dioxide, silicon nitride, titanium dioxide, hafnium dioxide, or tantalum pentoxide. The above-mentioned at least one material can be deposited on the surfaces of the first light-emitting device 2, the second light-emitting device 4, and the third light-emitting device 6 through a thin-film deposition process, and then the designated part of the insulating protective layer 11 can be removed by etching, and the operation is relatively simple. In this way, using the above materials can make it more convenient to prepare the insulating protective layer 11.

[0087] In some possible implementation manners, the light-shielding layer is a reflective layer. The reflective layer can reflect the light emitted by the first light-emitting device 2, the first quantum dot layer 3, the second light-emitting device 4, the second quantum dot layer 5, and the third light-emitting device 6, and improve the convergence amount of the corresponding light.

[0088] Preferably, the thickness L2 of the reflective layer ranges from 3 nm to 15 nm. That is Figure 5 3 nm < L2 < 15 nm. By reasonably designing the thickness of the insulating protective layer 11, the thickness of the display device can be not increased without affecting the insulation effect.

[0089] Preferably, the material of the reflective layer includes at least one of aluminum, gold, nickel, titanium, palladium, or platinum. The above-mentioned at least one metal material can be deposited on the surfaces of the first light-emitting device 2, the second light-emitting device 4, and the third light-emitting device 6 through a thin-film deposition process, and then the designated part of the reflective layer can be removed by etching, and the operation is relatively simple. In this way, using the above materials can make it more convenient to prepare the reflective layer.

[0090] In some possible implementation manners, please refer to Fig. 9 , the display device further includes a light-shielding ring 13, and the light-shielding ring 13 surrounds the light-emitting pixels. The light-emitting pixels are isolated by the light-shielding ring 13. In this way, the phenomenon of light crosstalk between the light-emitting pixels can be reduced.

[0091] Preferably, the material of the light-shielding ring 13 includes black matrix glue. The black matrix glue has good light-shielding properties. Therefore, using the black matrix glue as the material of the light-shielding ring 13 can further reduce the phenomenon of light crosstalk between the light-emitting pixels.

[0092] Preferably, the distance from the side of the light-shielding ring 13 away from the driving substrate 1 to the driving substrate 1 (i.e., Fig. 9 D2 in it) is greater than the distance from the side of the light-emitting device away from the driving substrate 1 to the driving substrate 1 (i.e., Fig. 9 D1 in it), that is Fig. 9D1 < D2 in it. In this way, the light shielding ring 13 can better shield the light around the light-emitting pixels, thereby further reducing the light crosstalk phenomenon between the light-emitting pixels.

[0093] Preferably, the orthographic projection of the light shielding ring 13 on the driving substrate 1 is in an annular shape. In this way, not only does it not affect the light shielding effect of the light shielding ring 13, but also the light shielding ring 13 with an annular orthographic projection occupies less space, making the structure of the light-emitting pixels more compact.

[0094] In some possible implementation manners, please refer to again Fig. 9 , the orthographic projection of the side of the light-emitting device away from the driving substrate 1 on the driving substrate 1 is located within the orthographic projection of the side of the light-emitting device close to the driving substrate 1 on the driving substrate 1. That is, the first light-emitting device 2, the second light-emitting device 4, and the third light-emitting device 6 are all in a trapezoidal shape with a larger bottom and a smaller top. In this way, it is easier for the first light-emitting device 2, the second light-emitting device 4, and the third light-emitting device 6 to承接 the film layer, and the stability is better.

[0095] In some possible implementation manners, please refer to again Fig. 9 , the orthographic projection of the side of the first quantum dot layer 3 and the second quantum dot layer 5 close to the driving substrate 1 on the driving substrate 1 is located within the orthographic projection of the side away from the driving substrate 1 on the driving substrate 1. Since the first light-emitting device 2, the second light-emitting device 4, and the third light-emitting device 6 are all in a trapezoidal structure with a larger bottom and a smaller top, and the first quantum dot layer 3 and the second quantum dot layer 5 are镶嵌 between the above-mentioned light-emitting devices, the first quantum dot layer 3 and the second quantum dot layer 5 are both in a trapezoidal shape with a smaller bottom and a larger top. In this way, it is easier for the first quantum dot layer 3 and the second quantum dot layer 5 to match the corresponding light-emitting devices.

[0096] In some possible implementation manners, the sides of the first light-emitting device 2, the second light-emitting device 4, the third light-emitting device 6, the first quantum dot layer 3, and the second quantum dot layer 5 away from the driving substrate 1 are coplanarly arranged. In this way, it is easier to deposit the common electrode.

[0097] In some possible implementation manners, please refer to Fig.10The first light-emitting device 2, the second light-emitting device 4 and the third light-emitting device 6 all include an n-GaN layer 14 close to the driving substrate 1, a quantum well layer 15 located on the side of the n-GaN layer 14 away from the driving substrate 1, and a p-GaN layer 16 located on the side of the quantum well layer 15 away from the driving substrate 1.

[0098] The p-GaN layer 16 is a P-type gallium nitride layer, and the P-type gallium nitride layer is partially etched longitudinally to expose the n-GaN layer 14, and a first electrode 17 (as the anode of the light-emitting device) is formed on the unetched P-type gallium nitride layer; the n-GaN layer 14 is an N-type gallium nitride layer, and a second electrode 18 (as the cathode of the light-emitting device) is formed on the N-type gallium nitride layer exposed by etching; the quantum well layer 15 can be InGaN, which serves as a blue light source. The first light-emitting device 2, the second light-emitting device 4 and the third light-emitting device 6 of such a structure are smaller in size, which is more conducive to the preparation of a display device with high-density pixels.

[0099] Next, Fig. 9 Take the display device in as an example to introduce the preparation method of the display device, see Fig.11 , the method comprises the following steps:

[0100] S10: transferring at least one light-emitting pixel onto the driving substrate 1 , and electrically connecting the electrodes of the first light-emitting device 2 , the second light-emitting device 4 and the third light-emitting device 6 in the light-emitting pixel to the bonding electrodes 10 on the driving substrate 1 .

[0101] In this embodiment, the first light emitting device 2, the second light emitting device 4 and the third light emitting device 6 may all be blue light emitting devices. Fig.12 Based on the wafer-level bonding process, the multi-quantum well structure (at least one light-emitting pixel) on the surface of the GaN-based LED wafer is transferred to the driving substrate 1, and the bonding electrodes 10 of the driving substrate 1 are respectively connected to the first light-emitting device 2, the second light-emitting device 4 and the third light-emitting device 6 in the light-emitting pixel to form a good electrical connection, and then the growth substrate of the light-emitting pixel is removed by a process such as chemical mechanical polishing, and then based on a photolithography or etching process, the array structure of the first light-emitting device 2, the second light-emitting device 4 and the third light-emitting device 6 is manufactured, that is, the first light-emitting device 2, the second light-emitting device 4 and the third light-emitting device 6 and the gaps between the corresponding light-emitting devices are exposed.

[0102] S11 : depositing an insulating protection layer 11 on one side of the driving substrate 1 on which the first light emitting device 2 , the second light emitting device 4 and the third light emitting device 6 are disposed.

[0103] In this example, see Fig.13 A transparent insulating protective layer 11 is deposited on the surfaces of the first light-emitting device 2 , the second light-emitting device 4 and the third light-emitting device 6 by a thin film deposition process.

[0104] S12: removing the insulating protection layer 11 on the side of the first light emitting device 2 , the second light emitting device 4 and the third light emitting device 6 away from the driving substrate 1 and on the surface of the driving substrate 1 .

[0105] In this example, see Fig.14 The insulating protection layer 11 on the side of the first light emitting device 2, the second light emitting device 4 and the third light emitting device 6 away from the driving substrate 1 and the surface of the driving substrate 1 are removed by photolithography or etching process.

[0106] S13 : depositing a reflective layer 19 on a side of the insulating protection layer 11 away from the driving substrate 1 .

[0107] In this example, see Fig.15 A reflective layer 19 is deposited on the surfaces of the first light emitting device 2 , the second light emitting device 4 and the third light emitting device 6 by a thin film deposition process.

[0108] S14: remove the reflective layer 19 on the side of the first light emitting device 2 away from the driving substrate 1, the reflective layer 19 on the side of the second light emitting device 4 facing the first light emitting device 2, the reflective layer 19 on the side of the third light emitting device 6 facing the second light emitting device 4, and the reflective layer 19 on the surface of the driving substrate 1.

[0109] In this example, see Fig.16 , the reflective layer 19 on the side of the first light-emitting device 2 away from the driving substrate 1, the reflective layer 19 on the side of the second light-emitting device 4 facing the first light-emitting device 2, the reflective layer 19 on the side of the third light-emitting device 6 facing the second light-emitting device 4, and the reflective layer 19 on the surface of the driving substrate 1 are all removed by photolithography or etching process. Finally, the reflective layer 19 completely wraps around the first light-emitting device 2, and only the reflective layer 19 on the side away from the driving substrate 1 is removed. For the second light-emitting device 4, only the reflective layer 19 on the side of the second light-emitting device 4 in contact with the first quantum dot layer 3 is removed; for the third light-emitting device 6, only the reflective layer 19 on the side of the third light-emitting device 6 in contact with the second quantum dot layer 5 is removed.

[0110] S15: disposing the first quantum dot layer 3 between the first light-emitting device 2 and the second light-emitting device 4 , and disposing the second quantum dot layer 5 between the second light-emitting device 4 and the third light-emitting device 6 .

[0111] In this embodiment, the first quantum dot layer 3 may be a green quantum dot layer, and the second quantum dot layer 5 may be a red quantum dot layer. Fig.17 The first quantum dot layer 3 is set at a specific gap position between the first light-emitting device 2 and the second light-emitting device 4 by inkjet printing or photolithography, and the second quantum dot layer 5 is set at a specific gap position between the second light-emitting device 4 and the third light-emitting device 6, and the first quantum dot layer 3 and the second quantum dot layer 5 are cured.

[0112] S16 : depositing an insulating protection layer 11 on the side of the first quantum dot layer 3 and the side of the second quantum dot layer 5 away from the driving substrate 1 .

[0113] In this embodiment, after the first quantum dot layer 3 and the second quantum dot layer 5 are embedded and cured, see Fig.18 An insulating protection layer 11 is deposited on the first quantum dot layer 3 and the second quantum dot layer 5 on the side away from the driving substrate 1 by using a low-temperature chemical vapor deposition process.

[0114] S17 : depositing a common electrode layer 12 on a side of the first light-emitting device 2 , the second light-emitting device 4 , the third light-emitting device 6 , the first quantum dot layer 3 , and the second quantum dot layer 5 away from the driving substrate 1 .

[0115] In this embodiment, please refer to Figure 6 A common electrode layer 12 is deposited on the side of the first light-emitting device 2, the second light-emitting device 4, the third light-emitting device 6, the first quantum dot layer 3 and the second quantum dot layer 5 away from the driving substrate 1 through a thin film deposition process, wherein the common electrode layer 12 can be an indium tin oxide semiconductor transparent conductive film.

[0116] S18: forming a light shielding ring 13 surrounding the light-emitting pixel on the driving substrate 1 .

[0117] In this embodiment, see again Fig. 9 The material of the light shielding ring 13 is black matrix glue. The light shielding ring 13 made of black matrix glue is used to isolate adjacent light emitting pixel areas, which can reduce the light crosstalk phenomenon between different light emitting pixels. Through the above method, the display device can be prepared more conveniently.

[0118] In summary, the present application achieves compact integration of the quantum dot layer and the light-emitting device array by inlaying and filling the gaps between each light-emitting device, utilizing the light-emitting device itself as a supporting frame and graphic definition structure for the quantum dot layer, and no longer arranging an additional supporting structure for supporting the quantum dot layer. The originally idle gaps between the light-emitting devices can be utilized more efficiently, thereby improving space utilization, making the pixel structure more compact, and thus being more conducive to the preparation of light-emitting devices with high pixel density.

[0119] In some possible implementations, the present application further provides an electronic device, including the display device described in the present application. The electronic device may include a device with image processing capabilities, such as a server, a personal computer, a notebook computer, etc. Since the electronic device includes the display device described in the present application, the pixel density of the electronic device can be prepared to be higher.

[0120] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0121] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A display device, characterized in that: The display device comprises: Driver substrate; At least one light-emitting pixel is located on one side of the driving substrate, the light-emitting pixel includes a plurality of light-emitting devices and at least one quantum dot layer, the quantum dot layer is located between the light-emitting devices, and the quantum dot layer is arranged on the driving substrate.

2. The display device according to claim 1, characterized in that: The display device further includes a light shielding layer, and the light shielding layer is located on at least a portion of an outer surface of the light emitting device except a surface in contact with the driving substrate.

3. The display device according to claim 2, characterized in that: The light emitting device comprises a first light emitting device, a second light emitting device and a third light emitting device, and the quantum dot layer comprises a first quantum dot layer and a second quantum dot layer; The light emitting surface of the second light emitting device is opposite to the first quantum dot layer, and the second light emitting device is used to excite the first quantum dot layer to emit light; the light emitting surface of the third light emitting device is opposite to the second quantum dot layer, and the third light emitting device is used to excite the second quantum dot layer to emit light; Preferably, the first light-emitting device, the second light-emitting device and the third light-emitting device are all blue light-emitting devices, the first quantum dot layer is a green quantum dot layer, and the second quantum dot layer is a red quantum dot layer; Preferably, the first light-emitting device, the first quantum dot layer and the second quantum dot layer emit different colors of light; Preferably, the light emitting directions of the first light emitting device, the first quantum dot layer and the second quantum dot layer are in the same direction.

4. The display device according to claim 3, characterized in that The light shielding layer includes a first light shielding layer, a second light shielding layer and a third light shielding layer, wherein the first light shielding layer is located on at least a portion of the outer surface of the first light emitting device except the side away from the driving substrate; the second light shielding layer is located on at least a portion of the outer surface of the second light emitting device except the side in contact with the first quantum dot layer; the third light shielding layer is located on at least a portion of the outer surface of the third light emitting device except the side in contact with the second quantum dot layer; Preferably, the first light-shielding layer is located on the remaining outer surfaces of the first light-emitting device except the side away from the driving substrate; the second light-shielding layer is located on the remaining outer surfaces of the second light-emitting device except the side in contact with the first quantum dot layer; the third light-shielding layer is located on the remaining outer surfaces of the third light-emitting device except the side in contact with the second quantum dot layer.

5. The display device according to claim 3, characterized in that: One side of the driving substrate has a bonding electrode, and the first light-emitting device, the second light-emitting device and the third light-emitting device are all electrically connected to the bonding electrode; the display device also includes a common electrode layer located on a side of the light-emitting pixel away from the driving substrate; At least part of the side surface of the first light-emitting device, at least part of the side surface of the second light-emitting device, at least part of the side surface of the third light-emitting device, at least part of the surface of the first quantum dot layer away from the driving substrate, and at least part of the surface of the second quantum dot layer away from the driving substrate are all provided with an insulating protective layer; Preferably, the side surface of the first light-emitting device, the side surface of the second light-emitting device, the side surface of the third light-emitting device, the side of the first quantum dot layer away from the driving substrate, and the side of the second quantum dot layer away from the driving substrate all have an insulating protective layer; Preferably, the material of the insulating protection layer includes at least one of aluminum oxide, silicon dioxide, silicon nitride, titanium dioxide, hafnium dioxide or tantalum pentoxide.

6. The display device according to claim 3, characterized in that One side of the driving substrate has a bonding electrode, and the first light-emitting device, the second light-emitting device and the third light-emitting device are all electrically connected to the bonding electrode; the display device also includes a common electrode layer located on a side of the light-emitting pixel away from the driving substrate; The side surfaces of the first light-emitting device, the side surfaces of the second light-emitting device, the side surfaces of the third light-emitting device, the first quantum dot layer except the side in contact with the driving substrate and the side in contact with the second light-emitting device, and the second quantum dot layer except the side in contact with the driving substrate and the side in contact with the third light-emitting device all have an insulating protective layer.

7. The display device according to any one of claims 2 to 6, characterized in that: The light-shielding layer is a reflective layer; Preferably, the thickness of the reflective layer is in the range of 3nm-15nm; Preferably, the material of the reflective layer includes at least one of aluminum, gold, nickel, titanium, palladium or platinum.

8. The display device according to any one of claims 1 to 6, characterized in that: The display device further comprises a light shielding ring, which surrounds the light-emitting pixel; Preferably, the material of the light-shielding ring includes black matrix glue; Preferably, the distance from the side of the light shielding ring away from the driving substrate to the driving substrate is greater than the distance from the side of the light emitting device away from the driving substrate to the driving substrate; Preferably, the orthographic projection of the light-shielding ring on the driving substrate is in a circular shape.

9. The display device according to any one of claims 1 to 6, characterized in that: The orthographic projection of the side of the light emitting device away from the driving substrate on the driving substrate is located within the orthographic projection of the side of the light emitting device close to the driving substrate on the driving substrate.

10. An electronic device, characterized in that: A display device comprising any one of claims 1 to 9.

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