Process task execution method and semiconductor process equipment

Abstract

The invention discloses a process task execution method and semiconductor process equipment. The method comprises the steps that after a process task is started, target chamber idle time after target service execution is completed is obtained, and the target service is the service executed finally before the process task is started; according to the target service and the target chamber idle time, obtaining a recommended number of corresponding test wafers; if the recommended number is greater than 0, executing a test task on the recommended number of test wafers; and after the test task is executed, executing a process task on the product wafer. According to the method and the device, the test task is executed when the test task is needed, and the test task is not executed when the test task is not needed, so that the CD shift phenomenon does not occur in the product Wafer, the Dummy tasks with different time lengths are executed according to the needs when the test task needs to be executed, and the productivity is improved on the premise of ensuring that the CD shift phenomenon does not occur in the product Wafer.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular, relates to a method for executing a process task and semiconductor process equipment. Background Art

[0002] In the field of semiconductor manufacturing, if other services are performed before a process (job) task begins, after the job task is started, due to the unstable state in the chamber, the first few product wafers (wafers) of the job task will usually have a groove line width (critical dimension, CD) shift (Shift) phenomenon, affecting the process quality of the product wafer.

[0003] In order to avoid the problem that the execution of other services before the Job task affects the process quality of the product wafer, in the related technology, before the Job task starts, when the chamber idle time (Idle Time) reaches the set value, the Dummy task is executed on the set number of test (Dummy) wafers, and the Job task is executed on the product wafer after the Dummy task is completed. However, in the above scheme, if the setting value of Idle Time is set too long, other services will be executed when Idle Time has not reached the set value, which will result in the Dummy task not being executed before the Job task starts, so that the product wafer will still have CD Shift phenomenon; if the setting value of Idle Time is set too short (for example, 0), the Dummy task must be executed on the set number of Dummy wafers before each Job task starts. Frequent execution of Dummy tasks with a set duration seriously affects the production capacity of semiconductor process equipment, such as the chip output per hour (Wafer Per Hour, WPH). Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a method for executing a process task and a semiconductor process equipment, so as to solve the problem in the related technology that the setting value of Idle Time is set too long, resulting in the Dummy task not being executed before the start of the Job task, so that the product Wafer still has CD Shift phenomenon, or the setting value is too short, resulting in frequent execution of Dummy tasks with a set duration, which seriously affects the production capacity of semiconductor process equipment.

[0005] To achieve the above objectives, the present application embodiment adopts the following technical solutions: In a first aspect, an embodiment of the present application provides a method for executing a process task, comprising: after the process task is started, obtaining a target chamber idle time after the target service is executed, the target service being the last service executed before the process task is started; according to the target service and the target chamber idle time, obtaining a recommended number of corresponding test wafers; if the recommended number is greater than 0, executing the test task on the recommended number of test wafers; after the test task is executed, executing the process task on the product wafers.

[0006] In a second aspect, an embodiment of the present application provides a semiconductor process equipment, comprising: a controller, which is arranged in a host computer and / or a slave computer of the semiconductor process equipment, and the controller is used to implement the steps of the method for executing the process task as described in the embodiment of the first aspect of the present application.

[0007] At least one of the above technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects: After the process task is started, the embodiment of the present application obtains the target chamber idle time after the target service is executed, where the target service is the last service executed before the process task is started. Based on the target service and the target chamber idle time, the recommended number of corresponding test wafers is obtained. If the recommended number is greater than 0, the test task is executed on the recommended number of test wafers. After the test task is executed, the process task is executed on the product wafers. In the embodiment of the present application, after each process task is started and before the process task is executed on the product wafer, the target service and the target chamber idle time are used to determine whether to execute the test task (the test task will not be executed when the recommended number is 0), as well as the recommended number of test wafers on which the test task needs to be executed, and the test task is executed on the recommended number of test wafers without waiting for the target chamber idle time to reach the set value. This ensures that the test task is executed when necessary and not executed when not necessary. This avoids the problem of CD Shift phenomenon in the product wafer caused by not executing the Dummy task before the start of the process task, and the problem of serious impact on the production capacity of the semiconductor process equipment caused by frequent execution of the Dummy task before each process task is started. This also ensures that when the test task needs to be executed, Dummy tasks are executed on different numbers of Dummy Wafers as needed, that is, Dummy tasks of different durations are executed. This further improves the production capacity of semiconductor process equipment, such as WPH, while ensuring that the CD Shift phenomenon does not occur in the product wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings: Figure 1 A flowchart of a method for executing a process task provided in one embodiment of the present application; Figure 2 A schematic flow chart of a method for executing a process task provided in another embodiment of the present application; Figure 3 A schematic diagram of a dynamic impact factor mapping relationship curve provided for an embodiment of the present application; Figure 4 A schematic diagram of a dynamic impact factor mapping relationship curve provided for another embodiment of the present application; Figure 5 A schematic flow chart of a method for executing a process task provided in another embodiment of the present application; Figure 6 A schematic flow chart of a method for executing a process task provided in another embodiment of the present application; Figure 7 A schematic flow chart of a method for executing a process task provided in another embodiment of the present application; Figure 8 A schematic flow chart of a method for executing a process task provided in another embodiment of the present application; Fig. 9 A schematic structural diagram of a semiconductor process equipment provided for one embodiment of the present application. DETAILED DESCRIPTION

[0009] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0010] The terms "first", "second", etc. in this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here. In addition, the "and / or" in this application represents at least one of the connected objects, and the character " / " generally represents that the front and back associated objects are in an "or" relationship. It should be noted that the data involved in this application are all obtained on the premise of obtaining user authorization.

[0011] In the semiconductor manufacturing field, if other services are performed before a job task starts, after the job task is started, due to the unstable state in the chamber, the first few product wafers of the job task will usually experience CD Shift phenomenon, affecting the process quality of the product wafers.

[0012] In order to avoid the problem that the execution of other services before the Job task affects the process quality of the product wafer, in the related technology, before the Job task starts, it is pre-set that when the chamber idle time (Idle Time) reaches the set value, the Dummy task is executed on the set number of Dummy Wafers, and the Job task is executed on the product wafer after the Dummy task is completed. However, in the above scheme, if the setting value of Idle Time is set too long, other services will be executed before the Idle Time reaches the set value, which will result in the Dummy task not being executed before the Job task starts, so that the product wafer will still have CD Shift phenomenon; if the setting value of Idle Time is set too short (for example, 0), the Dummy task must be executed on the set number of Dummy Wafers before each Job task starts. Frequent execution of Dummy tasks with a set duration seriously affects the production capacity of semiconductor process equipment, such as WPH. To this end, the present application proposes a method for executing a process task, a semiconductor process equipment and a storage medium to solve the problem in the related art that the setting value of Idle Time is set too long, resulting in the Dummy task not being executed before the start of the Job task, so that the product Wafer still has CD Shift phenomenon, or the setting value is too short, resulting in the frequent execution of Dummy tasks with the set duration, seriously affecting the production capacity of the semiconductor process equipment.

[0013] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0014] Figure 1 A flowchart of a method for executing a process task provided by an embodiment of the present application is shown below. Figure 1 As shown, the method for executing the process task of the embodiment of the present application may specifically include the following steps: S101, after the process task is started, obtaining the target chamber idle time after the target service is executed.

[0015] In the embodiment of the present application, the execution subject of the execution method of the process task of the embodiment of the present application is a controller, which can be set in the upper computer and / or lower computer of the semiconductor process equipment (such as vertical furnace oxidation equipment, etc.).

[0016] After receiving the job task instruction each time, the job task is started, but before the job task is officially executed on the product wafer, it is determined whether the Dummy task needs to be executed. If the Dummy task needs to be executed, the job task is executed on the product wafer after the Dummy task is completed. If the Dummy task is not required, the job task is executed on the product wafer.

[0017] To determine whether the Dummy task needs to be executed, the target chamber idle time after the target service is executed needs to be obtained. The target service is the service that was last executed before the job task was started or before the chamber was idle, that is, which service is used to determine the target chamber idle time. The target chamber idle time is the chamber idle time after the target service is executed after the job task is started. For example, if the target service is completed at t1 and the job task is started at t2, the target chamber idle time = t2-t1.

[0018] S102, obtaining a recommended number of corresponding test wafers according to the target service and the target chamber idle time.

[0019] In an embodiment of the present application, after different services are executed, the degree of impact on the chamber environment is different based on the change in chamber idle time (i.e., different chamber idle times), that is, the number of test wafers required is different. Therefore, based on the target service and the target chamber idle time, the recommended number m of test wafers corresponding to the target service and the target chamber idle time is obtained, where m≥0.

[0020] For example, the recommended number of test wafers corresponding to different services and different chamber idle times may be preset, and the corresponding recommended number m may be determined according to the target service and the target chamber idle time.

[0021] It should be noted here that for known services, users can determine, based on their own experience, the degree of impact on the chamber environment and the impact on the first few wafers of subsequent process tasks at different chamber idle times after the service is completed. Therefore, based on experience, the recommended number m of test wafers corresponding to different services and different chamber idle times can be manually set.

[0022] During the software upgrade and iteration process, new services will be added (such as O2 Burn service, Leak Rate service, and MFC Calibration service). However, since these are new services, users have no relevant experience in using these services. During the continuous calling of the services, the algorithm can continuously learn and make intelligent recommendations on the number of test wafers m.

[0023] S103: If the recommended number is greater than 0, the test task is performed on the recommended number of test wafers.

[0024] In the embodiment of the present application, a preset test recipe is used to perform the test task on a recommended number m of test wafers.

[0025] It should be noted here that if the recommended number is 0, it means that the target service has almost no impact on the chamber environment during the target chamber idle time, that is, the current chamber environment meets the process requirements. At this time, executing the process task on the product wafer will not affect the product wafer, so there is no need to execute the test task.

[0026] S104, after the test task is completed, the process task is performed on the product wafer.

[0027] In summary, the execution method of the process task of the embodiment of the present application, after the process task is started, obtains the target chamber idle time after the target service is executed, the target service is the last service executed before the process task is started, and the recommended number of corresponding test wafers is obtained according to the target service and the target chamber idle time. If the recommended number is greater than 0, the test task is executed on the recommended number of test wafers. After the test task is completed, the process task is executed on the product wafers. In the embodiment of the present application, after each process task is started and before the process task is executed on the product wafer, the target service and the target chamber idle time are used to determine whether to execute the test task (the test task will not be executed when the recommended number is 0), as well as the recommended number of test wafers on which the test task needs to be executed, and the test task is executed on the recommended number of test wafers without waiting for the target chamber idle time to reach the set value. This ensures that the test task is executed when necessary and not executed when not necessary. This avoids the problem that the product wafer will not experience CD Shift due to not executing the Dummy task before the start of the process task, and the problem that the production capacity of the semiconductor process equipment must be seriously affected by frequently executing the Dummy task before each process task starts. This also ensures that when the test task needs to be executed, Dummy tasks are executed on different numbers of Dummy Wafers as needed, that is, Dummy tasks of different durations are executed. This further improves the production capacity of semiconductor process equipment, such as WPH, while ensuring that the product wafer will not experience CD Shift.

[0028] Figure 2 A flowchart of a method for executing a process task provided by another embodiment of the present application is shown below. Figure 2 As shown, in Figure 1 Based on the illustrated embodiment, the method for executing the process task of the embodiment of the present application may specifically include the following steps: S201, after the process task is started, obtaining the target chamber idle time after the target service is executed.

[0029] In the embodiment of the present application, step S201 is the same as step S101 in the above embodiment and will not be described again here.

[0030] S202, obtaining a triggering method for the test task.

[0031] In an embodiment of the present application, triggering modes of multiple test tasks are pre-set, such as an immediate triggering mode before a process task is executed, an intelligent triggering mode before a process task is executed, and the like.

[0032] Among them, the immediate triggering mode before the process task is executed is to perform the test task according to the recommended number of test wafers obtained. The intelligent triggering mode before the process task is executed is to perform the test task after the recommended number of test wafers obtained is intelligently corrected.

[0033] If the triggering mode of the test task is the immediate triggering mode before the process task is executed, then steps S203-S204 are executed. If the triggering mode of the test task is the intelligent triggering mode before the process task is executed, then steps S205-S208 are executed.

[0034] S203: If the triggering mode of the test task is an immediate triggering mode before the process task is executed, the corresponding recommended quantity is obtained according to the target service and the target chamber idle time.

[0035] In the embodiment of the present application, step S203 is substantially the same as step S102 in the above embodiment and will not be described in detail here.

[0036] S204: If the recommended number is greater than 0, the test task is performed on the recommended number of test wafers.

[0037] In the embodiment of the present application, step S204 is the same as step S103 in the above embodiment and will not be described again here.

[0038] S205: If the triggering mode of the test task is the intelligent triggering mode before the process task is executed, the corresponding dynamic impact factor and the corresponding recommended quantity are obtained according to the target service and the target chamber idle time.

[0039] In the embodiment of the present application, the dynamic impact factor is used to characterize the degree of impact of the service on the chamber environment based on the change of the chamber idle time after the service is executed.

[0040] After different services are executed, the degree of impact on the chamber environment (which can be represented by a dynamic impact factor) is different based on the change of chamber idle time (i.e., under different chamber idle times) (for example, after the chamber cleaning service is executed, the degree of impact on the chamber environment is greater based on the change of chamber idle time, and after the leak rate detection service is executed, the degree of impact on the chamber environment is smaller based on the change of chamber idle time), and thus the number of test wafers required is also different. Therefore, according to the target service and the target chamber idle time, the dynamic impact factor β corresponding to the target service and the target chamber idle time and the recommended number of test wafers m, m≥0, are obtained. The dynamic impact factor β corresponding to the target service and the target chamber idle time is used to characterize the degree of impact on the chamber environment based on the change of the target chamber idle time after the target service is executed.

[0041] For example, the dynamic impact factor β and the recommended number m corresponding to different services and different chamber idle times may be preset, and the corresponding dynamic impact factor β and the recommended number m of test wafers may be determined according to the target service and the target chamber idle time.

[0042] As a feasible implementation method, the step of "obtaining the corresponding dynamic impact factor and the corresponding recommended quantity according to the target service and the target chamber idle time" may specifically include the following steps: According to the target service, the corresponding dynamic impact factor mapping relationship is obtained in the machine service list, the machine service list includes the service and the dynamic impact factor mapping relationship associated with the service, the dynamic impact factor mapping relationship includes a mapping relationship between multiple dynamic impact factors, a recommended number of multiple test wafers and a plurality of chamber idle times; according to the target chamber idle time, the corresponding dynamic impact factor and the corresponding recommended number are obtained in the corresponding dynamic impact factor mapping relationship.

[0043] Specifically, all automatic services that can be realized by the chamber can be obtained in advance, such as Auto Burn, AutoLeakRate, Auto MFCCalibration and other pre-configured services. Users can enable or disable each automatic service according to actual needs, and set the execution conditions (execution mode, execution time, etc.) of these services. Table 1 takes the Auto LeakRate service as an example to illustrate the conditions that need to be set.

[0044] Table 1 Auto LeakRate service settings

[0045] An associated dynamic impact factor mapping relationship is set for each service, wherein the dynamic impact factor mapping relationship includes a mapping relationship between multiple dynamic impact factors β, a recommended number m of multiple test wafers, and multiple chamber idle times IdleTime, which may specifically include but are not limited to curves, matrices, tables, and the like.

[0046] As a first feasible implementation, the dynamic impact factor mapping relationship may include a curve (e.g., Figure 3 As shown in the figure), the corresponding recommended number m is marked for each dynamic impact factor β.

[0047] As a second feasible implementation, the dynamic impact factor mapping relationship may include a curve (e.g., Figure 4 as shown).

[0048] Further, such as Figure 5 As shown, the above “dynamic impact factor mapping relationship associated with the service” can be obtained by following the steps below: S501, calculating the dynamic impact factor of the service under different chamber idle times.

[0049] In an embodiment of the present application, when the service history is executed, the process parameters and process result parameters under different chamber idle times t are obtained, and based on these process parameters APC and process result parameters HistoryLog, the dynamic impact factor β of the service under different chamber idle times t is calculated.

[0050] Process parameters APC: During the process, the machine parameters will continue to change with the process. For example, the data is collected at a frequency of 1 time / 0.2 seconds until the process is completed. The collected data is APC, such as ChamberTemp, Power, GasTemp, GasFlow, current, pressure, etc.

[0051] Process result parameter HistoryLog: Parameters used to characterize the quality of the process after the process is completed, such as whether it is clean, end mode, capacitor preset value, etc.

[0052] S502, obtaining the number of historical test wafers used by the historically optimal product wafers under different chamber idle times.

[0053] In the embodiment of the present application, the optimal product wafer is the wafer with the best yield. The yield specifically refers to the degree of CD value deviation of the wafer from the groove line width. The smaller the deviation, the better the yield. The CD value can be measured by a measuring machine.

[0054] The number m of historical test wafers used by the historically optimal wafer under different chamber idle times t is obtained. The specific process is as follows: through multiple rounds of experiments, experiments are conducted under different chamber idle times t, and under the same chamber idle time t, different numbers of test wafers are used to conduct experiments, and the number m of test wafers used by the optimal product wafer is obtained.

[0055] S503 , generating a dynamic impact factor mapping relationship associated with the service according to the dynamic impact factors at different chamber idle times and the number of historical test wafers at different chamber idle times.

[0056] In the embodiment of the present application, according to the multiple βs at multiple t obtained in step S501 and the multiple ms at multiple t obtained in step S502, for example, by curve fitting, we obtain Figure 3 or Figure 4 The dynamic impact factor mapping relationship curve associated with the service is shown.

[0057] Further, such as Figure 6 As shown, the above step S501 may specifically include the following steps: S601, calculating the influence rate of process parameters under different chamber idle times.

[0058] In the embodiment of the present application, the influence rate α (APC) of the process parameter APC under different chamber idle times is calculated.

[0059] Among them, Figure 7 As shown, α(APC) can be calculated by the following steps: S701, calculating the influence rate of the process parameters of the historical best product wafer under different chamber idle times according to the mean values ​​of the process parameters of the historical best product wafer under different chamber idle times.

[0060] In an embodiment of the present application, the mean of each process parameter APC corresponding to the historical optimal product wafer under different chamber idle times t is calculated based on the process step Step in the process recipe, and then the mean of each process parameter is summed according to the weight to obtain the influence rate of the process parameter of the historical optimal product wafer, i.e., α (optimal APC).

[0061] Assume that the process parameters of the historical best product wafer are as shown in Table 2: Table 2 Process parameters of the best wafer products in history

[0062] The mean value of APC of each process parameter is calculated as follows: ProcessPressure_avg = (10 + 10 + … + 10) / n; ChamberPressure_avg = (30 + 30 + … + 30) / n; SRFRefPower_avg = (200 + 200 + … + 200) / n; BRFRefPower_avg = (300 + 300 + … + 300) / n; …….

[0063] Calculate α (optimal APC): α (optimal APC) = K1* ProcessPressure_avg + K2* ChamberPressure_avg + K3*SRFRefPower_avg + K4* BRFRefPower_avg + ….

[0064] Among them, K1, K2, K3, K4, ..., represent the weight of each process parameter.

[0065] S702, calculating the influence rate of the historical process parameters of the current product wafer under different chamber idle times according to the mean values ​​of the process parameters of the historical current product wafer under different chamber idle times.

[0066] In the embodiment of the present application, the historical current product wafer refers to the product wafer in the current job in the historical process.

[0067] The calculation process is similar to the above α (optimal APC), the difference is that the product wafers are different (one is the historical optimal product wafer, and the other is the historical current product wafer), and the corresponding process parameter values ​​are different.

[0068] The mean of each process parameter corresponding to the historical current product wafer under different chamber idle times t is calculated based on the process steps in the process recipe. Then the mean of each process parameter is summed up according to the weight to obtain the influence rate of the historical current product wafer process parameter, i.e. α (APC of this service).

[0069] Assume that the process parameters of the historical current product wafer are as shown in Table 3: Table 3 Historical process parameters of current product wafers

[0070] The mean value of APC of each process parameter is calculated as follows: ProcessPressure_avg = (20 + 20 + … + 20) / n; ChamberPressure_avg = (30 + 30 + … + 30) / n; SRFRefPower_avg = (200 + 200 + … + 200) / n; BRFRefPower_avg = (300 + 300 + … + 300) / n; …….

[0071] Calculate α (the APC for this service): α (APC of the service) = K1* ProcessPressure_avg + K2* ChamberPressure_avg + K3*SRFRefPower_avg + K4* BRFRefPower_avg + ….

[0072] Among them, K1, K2, K3, K4, ..., represent the weight of each process parameter.

[0073] S703, calculating the ratio of the influence rate of the wafer process parameters of the historical best product under different chamber idle times to the influence rate of the wafer process parameters of the historical current product under different chamber idle times, and obtaining the influence rate of the process parameters under different chamber idle times.

[0074] In the embodiment of the present application, the influence rate of the process parameters α(APC)=α(optimal APC) / α(the service APC) is calculated under different chamber idle times t.

[0075] S602, calculating the influence rate of the process result parameters under different chamber idle times.

[0076] In the embodiment of the present application, the influence rate α (HistoryLog) of the process result parameters under different chamber idle times t is calculated.

[0077] Among them, Figure 8 As shown, α (HistoryLog) can be calculated by the following steps: S801, calculating the influence rate of the process result parameters of the historical best product wafer under different chamber idle times according to the mean values ​​of the process result parameters of the historical best product wafer under different chamber idle times.

[0078] In the embodiment of the present application, the calculation process of α (optimal APC) is similar to the above-mentioned one, except that different parameters of the historical optimal product wafer are used, one is the process parameter APC, and the other is the process result parameter HistoryLog.

[0079] The mean of each process result parameter HistoryLog corresponding to the historical optimal product wafer under different chamber idle times t is calculated based on the process step Step in the process recipe (Recipe), and then the mean of each process result parameter is summed according to the weight to obtain the influence rate of the process result parameter of the historical optimal product wafer, that is, α (optimal HistoryLog).

[0080] Assume that the process result parameters of the historical best product wafer are shown in Table 4: Table 4 Process result parameter table of the best product wafer in history

[0081] The mean value of each process result parameter HistoryLog is calculated as follows: BRFC1_avg = (650 + 650 + … + 650) / n; SRFC1_avg = (500 + 500 + … + 500) / n; EPDTime_avg = (25 + 25 + … + 25) / n; …….

[0082] Calculate α (optimal HistoryLog): α (optimal HistoryLog) = Y1*BRFC1_avg+Y2*SRFC1_avg+Y3* EPDTime_avg +….

[0083] Among them, Y1, Y2, Y3, ..., represent the weight of each process result parameter.

[0084] S802, calculating the influence rate of the historical process result parameters of the current product wafer under different chamber idle times according to the mean values ​​of the process result parameters of the historical current product wafer under different chamber idle times.

[0085] In the embodiment of the present application, the calculation process is similar to the above-mentioned α (optimal HistoryLog), except that the product wafers are different (one is the historical optimal product wafer, and the other is the historical current product wafer), and the values ​​of the corresponding process result parameters are different.

[0086] The mean of each process result parameter HistoryLog corresponding to the historical current product wafer under different chamber idle times t is calculated based on the process step Step in the process recipe (Recipe), and then the mean of each process result parameter is summed up according to the weight to obtain the influence rate of the historical current product wafer process result parameter, i.e. α (the service HistoryLog).

[0087] Assume that the process result parameters of the historical current product wafer are as shown in Table 5: Table 5: Process result parameter table of historical current product wafers

[0088] The mean value of each process result parameter HistoryLog is calculated as follows: BRFC1_avg = (600 + 600 + … + 600) / n; SRFC1_avg = (500 + 500 + … + 500) / n; EPDTime_avg = (25 + 25 + … + 25) / n; …….

[0089] Calculate α (the service HistoryLog): α(the service HistoryLog)=Y1* BRFC1_avg+Y2* SRFC1_avg+Y3* EPDTime_avg+…

[0090] Among them, Y1, Y2, Y3, ..., represent the weight of each process result parameter.

[0091] S803, calculating the ratio of the influence rate of the wafer process result parameters of the historical best product under different chamber idle times to the influence rate of the wafer process result parameters of the historical current product under different chamber idle times, and obtaining the influence rate of the process result parameters under different chamber idle times.

[0092] In the embodiment of the present application, the influence rate of the process result parameters under different chamber idle times t is calculated as α(HistoryLog)=α(optimal HistoryLog) / α(the service HistoryLog).

[0093] S603, calculating the weighted sum of the influence rate of the process parameters and the influence rate of the process result parameters under different chamber idle times, and obtaining the dynamic influence factor under different chamber idle times.

[0094] In the embodiment of the present application, the dynamic impact factor β of the computing service under different chamber idle times t is calculated as β={t|A*α(APC)+B*α(HistoryLog)}, where A and B are preset weight coefficients, and A is greater than B.

[0095] It should be noted here that the calculated multiple βs need to be normalized, that is, β is converted into a value within the range of -1 to 1. Because the revised recommended number n to be executed later will increase or decrease based on the recommended number m of test wafers corresponding to the historical best product wafer, β is set within the range of -1 to 1.

[0096] S206, calculating a target dynamic impact factor according to the target service and the target chamber idle time.

[0097] In the embodiment of the present application, the target dynamic impact factor βx can be calculated in real time according to the target service and the target chamber idle time. The calculation process refers to the relevant description of the dynamic impact factor β above, which will not be repeated here.

[0098] S207: According to the target dynamic impact factor and the corresponding dynamic impact factor, the corresponding dynamic impact factor and the corresponding recommendation quantity are modified.

[0099] In an embodiment of the present application, it can be determined whether the corresponding dynamic influence factor β and the corresponding recommended quantity m need to be corrected according to the target dynamic influence factor βx and the corresponding dynamic influence factor β. Specifically, the absolute value of the difference between the target dynamic influence factor βx and the corresponding dynamic influence factor β |βx-β| is calculated. If the absolute value of the difference |βx-β| is greater than a preset difference threshold, such as 0.5, it is determined that the corresponding dynamic influence factor β and the corresponding recommended quantity m need to be corrected: the corresponding dynamic influence factor β is corrected to the target dynamic influence factor βx, and the corresponding recommended quantity m is corrected according to the target dynamic influence factor βx and the corresponding recommended quantity m. For example, the corrected recommended quantity n can be calculated using the following formula: n=(1+βx)*m. n≤25, because a batch (Lot) has a maximum of 25 wafers.

[0100] If the absolute value of the difference |βx-β| is equal to or less than the difference threshold, for example, 0.5, it is determined that there is no need to correct the corresponding dynamic impact factor β and the corresponding recommended number m, and the test task is performed on the corresponding recommended number m of test wafers.

[0101] S208 , if the revised recommended number is greater than 0, executing the test task on the revised recommended number of test wafers.

[0102] In the embodiment of the present application, the test task is performed on the revised recommended number n of test wafers.

[0103] It should be noted here that the controller can automatically execute the test task based on the revised recommended number n, or send the revised recommended number n to the factory side, and then execute the test task after manual confirmation at the factory side.

[0104] S209, after the test task is completed, the process task is performed on the product wafer.

[0105] In the embodiment of the present application, step S209 is the same as step S104 in the above embodiment and will not be described again here.

[0106] In summary, the execution method of the process task of the embodiment of the present application determines whether to execute the test task (the test task will not be executed when the recommended number is 0) and the recommended number of test wafers that need to execute the test task according to the target service and the target chamber idle time after each process task is started and before the process task is executed on the product wafer, and executes the test task on the recommended number of test wafers without waiting for the target chamber idle time to reach the set value, thereby realizing the execution of the test task when necessary and not executing the test task when not necessary, avoiding the problem that the product wafer has CD Shift phenomenon due to the failure to execute the Dummy task before the start of the process task, and avoiding the problem that the production capacity of the semiconductor process equipment is seriously affected by the frequent execution of the Dummy task before each process task starts, and realizing that when the test task needs to be executed, the Dummy task is executed for different numbers of Dummy Wafers according to the needs, that is, the Dummy tasks of different durations are executed, and the production capacity of the semiconductor process equipment, such as WPH, is further improved under the premise of ensuring that the product wafer will not have CD Shift phenomenon. In addition, the number of Dummy Wafers is intelligently recommended by the recommendation algorithm, and the number of Dummy Wafers is accurately recommended, ensuring that the product wafer will not have CD Shift phenomenon.

[0107] The present application also provides a semiconductor process equipment. Fig. 9 As shown, the semiconductor process equipment 900 includes: a controller 901, which is arranged in a host computer and / or a slave computer of the semiconductor process equipment 900, and is used to implement the steps of the execution method embodiment of any of the above process tasks.

[0108] The semiconductor process equipment of the embodiment of the present application determines whether to execute the test task (the test task will not be executed when the recommended number is 0) and the recommended number of test wafers that need to execute the test task according to the target service and the target chamber idle time after each process task is started and before the process task is executed on the product wafer, and executes the test task on the recommended number of test wafers without waiting for the target chamber idle time to reach the set value, so that the test task is executed when necessary and not executed when not necessary, avoiding the problem that the product wafer has CDShift phenomenon due to the failure to execute the Dummy task before the process task starts, and avoiding the problem that the production capacity of the semiconductor process equipment is seriously affected by the frequent execution of the Dummy task before each process task starts, and realizing that when the test task needs to be executed, the Dummy task is executed for different numbers of DummyWafers according to the needs, that is, the Dummy task of different duration is executed, and the production capacity of the semiconductor process equipment, such as WPH, is further improved under the premise of ensuring that the product wafer will not have CDShift phenomenon. In addition, the number of Dummy Wafers is intelligently recommended by the recommendation algorithm, so that the number of Dummy Wafers is accurately recommended, and the CDShift phenomenon is ensured that the product wafer will not have CDShift phenomenon.

[0109] An embodiment of the present application also proposes a readable storage medium, on which one or more computer programs are stored. The one or more computer programs include instructions. When the program or instructions are executed by a processor in a semiconductor process equipment including multiple application programs, the processor in the semiconductor process equipment can execute the various processes of the execution method embodiment of the above-mentioned process tasks, and is specifically used to execute the steps of the execution method embodiment of any of the above-mentioned process tasks.

[0110] The readable storage medium of the embodiment of the present application determines whether to execute the test task (the test task will not be executed when the recommended number is 0) and the recommended number of test wafers that need to execute the test task according to the target service and the target chamber idle time after each process task is started and before the process task is executed on the product wafer, and executes the test task on the recommended number of test wafers without waiting for the target chamber idle time to reach the set value, thereby realizing the execution of the test task when necessary and not executing the test task when not necessary, avoiding the problem that the product wafer has CD Shift phenomenon due to the failure to execute the Dummy task before the process task starts, and avoiding the problem that the production capacity of the semiconductor process equipment is seriously affected by the frequent execution of the Dummy task before each process task starts, and realizing that when the test task needs to be executed, the Dummy task is executed for different numbers of Dummy Wafers according to the needs, that is, the Dummy task of different duration is executed, and the production capacity of the semiconductor process equipment, such as WPH, is further improved under the premise of ensuring that the product wafer will not have CD Shift phenomenon. In addition, the number of Dummy Wafers is intelligently recommended by the recommendation algorithm, and the number of Dummy Wafers is accurately recommended, ensuring that the product wafer will not have CD Shift phenomenon.

[0111] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0112] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0113] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0114] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0115] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0116] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0117] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0118] Memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. Memory is an example of a computer-readable medium.

[0119] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined in this article, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0120] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0121] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0122] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0123] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A method for executing a process task, characterized in that: include: After the process task is started, a target chamber idle time after the target service is executed is obtained, where the target service is the service that was last executed before the process task is started; According to the target service and the target chamber idle time, obtaining a corresponding recommended number of test wafers; If the recommended number is greater than 0, performing the test task on the recommended number of test wafers; After the test task is completed, the process task is performed on the product wafer.

2. The method according to claim 1, characterized in that Before obtaining the recommended number of corresponding test wafers according to the target service and the target chamber idle time, the method further includes: Obtaining a triggering method for the test task; The obtaining a corresponding recommended number of test wafers according to the target service and the target chamber idle time includes: If the triggering mode of the test task is an immediate triggering mode before the process task is executed, the corresponding recommended quantity is obtained according to the target service and the target chamber idle time.

3. The method according to claim 1, characterized in that Before obtaining the recommended number of corresponding test wafers according to the target service and the target chamber idle time, the method further includes: Obtaining a triggering method for the test task; The obtaining a corresponding recommended number of test wafers according to the target service and the target chamber idle time includes: If the triggering mode of the test task is the intelligent triggering mode before the process task is executed, then according to the target service and the target chamber idle time, a corresponding dynamic impact factor and a corresponding recommended quantity are obtained, and the corresponding dynamic impact factor is used to characterize the degree of influence of the target service on the chamber environment based on the change of the target chamber idle time after the target service is executed; Calculating a target dynamic impact factor according to the target service and the target chamber idle time; According to the target dynamic impact factor and the corresponding dynamic impact factor, modifying the corresponding dynamic impact factor and the corresponding recommended quantity; The test task is performed on the revised recommended number of test wafers.

4. The method according to claim 3, characterized in that The acquiring, according to the target service and the target chamber idle time, a corresponding dynamic impact factor and a corresponding recommended quantity includes: According to the target service, a corresponding dynamic impact factor mapping relationship is obtained in a machine service list, wherein the machine service list includes services and dynamic impact factor mapping relationships associated with the services, wherein the dynamic impact factor mapping relationship includes mapping relationships among multiple dynamic impact factors, multiple recommended numbers of test wafers, and multiple chamber idle times; According to the target chamber idle time, the corresponding dynamic impact factor and the corresponding recommended quantity are obtained in the corresponding dynamic impact factor mapping relationship.

5. The method according to claim 3, characterized in that: The modifying the corresponding dynamic impact factor and the corresponding recommended quantity according to the target dynamic impact factor and the corresponding dynamic impact factor includes: Calculating the absolute value of the difference between the target dynamic impact factor and the corresponding dynamic impact factor; If the absolute value of the difference is greater than a preset difference threshold, the corresponding dynamic impact factor and the corresponding recommended quantity are corrected.

6. The method according to claim 5, characterized in that The modifying of the corresponding dynamic impact factor and the corresponding recommended quantity includes: Correcting the corresponding dynamic impact factor to the target dynamic impact factor; According to the target dynamic impact factor and the corresponding recommended quantity, the corresponding recommended quantity is corrected.

7. The method according to claim 5, characterized in that Also includes: If the absolute value of the difference is equal to or less than the difference threshold, the test task is performed on the corresponding recommended number of test wafers.

8. The method according to claim 4, characterized in that The dynamic impact factor mapping relationship associated with the service is obtained by the following steps: Calculating the dynamic impact factor of the service under different chamber idle times; Obtaining the number of historical test wafers used by the historically optimal product wafers under the different chamber idle times; The dynamic impact factor mapping relationship associated with the service is generated according to the dynamic impact factors under the different chamber idle times and the number of historical test wafers under the different chamber idle times.

9. The method according to claim 8, characterized in that The calculating of the dynamic impact factor of the service under different chamber idle times includes: Calculating the influence rate of the process parameters under the different chamber idle times; Calculating the influence rate of the process result parameters under the different chamber idle times; The weighted sum of the influence rate of the process parameter and the influence rate of the process result parameter under the different chamber idle times is calculated to obtain the dynamic influence factor under the different chamber idle times.

10. The method according to claim 9, characterized in that The calculating the influence rate of the process parameters under different chamber idle times includes: According to the mean values ​​of the process parameters of the historical best product wafer under the different chamber idle times, the influence rate of the process parameters of the historical best product wafer under the different chamber idle times is calculated; According to the mean values ​​of the process parameters of the historical current product wafers under the different chamber idle times, the influence rates of the process parameters of the historical current product wafers under the different chamber idle times are calculated; The ratio of the influence rate of the process parameters of the historical optimal product wafer under the different chamber idle times to the influence rate of the process parameters of the historical current product wafer is calculated to obtain the influence rate of the process parameters under the different chamber idle times.

11. The method according to claim 9, characterized in that The calculating the influence rate of the process result parameter under the different chamber idle times includes: According to the mean values ​​of the process result parameters of the historical best product wafers under the different chamber idle times, the influence rates of the process result parameters of the historical best product wafers under the different chamber idle times are calculated; According to the mean values ​​of the process result parameters of the historical current product wafers under the different chamber idle times, the influence rates of the process result parameters of the historical current product wafers under the different chamber idle times are calculated; The ratio of the influence rate of the process result parameters of the historical optimal product wafer under the different chamber idle times to the influence rate of the process result parameters of the historical current product wafer is calculated to obtain the influence rate of the process result parameters under the different chamber idle times.

12. A semiconductor process equipment, characterized in that: include: A controller, wherein the controller is arranged in a host computer and / or a slave computer of the semiconductor process equipment, and the controller is used to implement the steps of the method as claimed in any one of claims 1 to 11.

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