Semiconductor device manufacturing method and semiconductor device

Abstract

The invention discloses a semiconductor device manufacturing method and a semiconductor device, and the method comprises the steps: coating the surface of a to-be-flattened part with a first solvent, and forming a first middleware; spin-coating a flat coating on the first middleware to form a second middleware; at the first temperature, the second middleware is heated for the first time from the side, away from the flat coating, of the first middleware, a part of the flat coating is solidified upwards from the first middleware at the first temperature, and a third middleware is formed; and the incompletely-cured flat coating of the third middleware is removed through a second solvent, a fourth middleware is formed, and the upper surface of the fourth middleware is flat. According to the method, the planarization operation on the surface of the substrate can be realized at a single photoetching site, so that the process period and the production cost are effectively reduced. And the use amount of the flat coating can be reduced by coating the first solvent, so that the production cost is further reduced.

Description

Technical Field

[0001] The present application relates to the technical field of planarization in chip manufacturing, and in particular to a semiconductor device manufacturing method and a semiconductor device. Background Art

[0002] Chips, including electronic components made of semiconductor materials, that is, semiconductor devices, have a variety of uses. They can be embedded in devices such as electronic products and integrated circuits, making the devices more intelligent, efficient and convenient. Chips have the following characteristics: small size, low power consumption, and a wide range of functions. With the development of science and technology, chips are constantly developing in the direction of high speed, high integration, high density and high performance. This has led to the continuous reduction of their feature sizes and the continuous increase in the number of wiring layers of metal interconnect structures. In the process of manufacturing the three-dimensional structure of multi-layer wiring, it is necessary to flatten the surface of the wafer where the wiring is formed to avoid negative impacts on subsequent processes, such as loss of control over the line width during photolithography and difficulty in making patterns on uneven photoresist on the steps after etching.

[0003] At present, chemical mechanical polishing is commonly used to flatten the surface of semiconductor devices in the manufacturing process. Chemical mechanical polishing is a process of flattening wafers with uneven surfaces by combining chemical reactions and mechanical polishing. The process is as follows: first, the surface to be polished of the wafer to be polished is attached downward to the polishing head, and then downward pressure is applied to the polishing head to press the surface to be polished of the silicon wafer tightly against the polishing pad. Then, the turntable with the polishing pad attached to the surface rotates under the drive of the motor. At the same time, the polishing head also rotates in the same direction. While the grinding head and the turntable rotate, the grinding liquid is supplied to the grinding pad through the grinding liquid supply pipe, and is distributed on the grinding pad under the action of the centrifugal force generated by the rotation of the turntable, thereby achieving the grinding of the wafer.

[0004] When the wafer is ground by chemical mechanical polishing, the wafer needs to be placed in the chemical mechanical polishing equipment, which increases the processing time and production costs and is not conducive to the efficient production of chips. Summary of the invention

[0005] The main technical problem solved by the present application is to provide a method for manufacturing a semiconductor device, which solves the problem that the chip needs to be subjected to chemical mechanical grinding, which increases processing time and production costs and is not conducive to efficient production of chips.

[0006] In order to solve the above technical problems, a technical solution adopted by the present application is to provide a method for manufacturing a semiconductor device, comprising the steps of:

[0007] Step 1, coating the surface of the workpiece to be flattened with a first solvent to form a first intermediate workpiece;

[0008] Step 2, spin coating a flat coating on the first intermediate member to form a second intermediate member;

[0009] Step 3, heating the second intermediate member at a first temperature for a first time from a side of the first intermediate member away from the flat coating, so that a portion of the flat coating is solidified upward from the first intermediate member at the first temperature to form a third intermediate member;

[0010] Step 4: removing the uncured flat coating of the third middle piece by using a second solvent to form a fourth middle piece, wherein the upper surface of the fourth middle piece is flat.

[0011] In some embodiments, the object to be planarized is a substrate including a surface pattern, and the substrate includes a semiconductor material.

[0012] In some embodiments, the first solvent is capable of dissolving the uncured flat coating, and the first solvent includes one or more of cyclohexanone, propylene glycol methyl ether acetate, or propylene glycol monomethyl ether.

[0013] In some embodiments, the second solvent is capable of dissolving the uncured flat coating, and the second solvent includes one or more of cyclohexanone, propylene glycol methyl ether acetate, or propylene glycol monomethyl ether.

[0014] In some embodiments, the content of the first solvent in the third intermediate component is lower than that in the second intermediate component.

[0015] In some embodiments, both the first solvent and the second solvent can dissolve the uncured flat coating, and both the first solvent and the second solvent are a mixture of propylene glycol methyl ether acetate and propylene glycol monomethyl ether.

[0016] In some embodiments, the planar coating layer can be cured by a cross-linking reaction at a first temperature, and the planar coating layer includes a spin-on carbon layer, a photoresist layer, a bottom anti-reflective layer, or a silicon-based hard mask intermediate structure layer.

[0017] In some embodiments, the flat coating can undergo a cross-linking reaction at a first temperature to be cured, the flat coating is a spin-coated carbon layer, the first time is 60s-120s, and the first temperature is 150°C-180°C.

[0018] In some embodiments, using the first solvent to coat the entire surface of the flattened part includes spraying the first solvent at a rate of 50ml / min-80ml / min for 2s-10s; using the second solvent to remove the uncured flat coating on the third intermediate part includes spraying the second solvent at a rate of 50ml / min-80ml / min for 2s-60s.

[0019] In some embodiments, the semiconductor device manufacturing method further includes:

[0020] Step 5: spin-coat a bottom anti-reflection layer on the fourth middle piece, and heat the fourth middle piece at a heating temperature greater than 220° C. to completely cure the flat coating.

[0021] In some embodiments, step 2 to step 4 may be repeated multiple times to flatten the object to be flattened multiple times.

[0022] In some embodiments, the present application also provides a semiconductor device manufactured using the above-mentioned semiconductor device manufacturing method.

[0023] The beneficial effects of the present application are as follows: the preparation of the flat coating in the present application can be achieved by spin coating the flat coating and heating and curing the bottom, and by controlling the first time and the first temperature, the curing degree of the top of the flat coating after heating is adjusted, and then the top of the flat coating that is not completely cured in the third intermediate is physically dissolved and removed by the second solvent, thereby achieving surface flattening. Different from the method of first chemically vapor depositing a flattening material layer and then achieving flattening by etching or chemical mechanical grinding, the present application can prepare the flat coating and spray the second solvent in the yellow light area. During the flattening process, there is no need to enter the chemical vapor deposition equipment or the chemical mechanical grinding equipment, and only the operation needs to be performed in the yellow light area, which is a simple process. In other words, the flattening operation of the substrate surface can be achieved at a single lithography site, effectively reducing the process cycle and production costs. And the coating of the first solvent can reduce the amount of the flat coating, further reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a flow chart of a method according to an embodiment of the present application;

[0025] Figure 2 is a graph of an uncured portion of a flat coating at different first temperatures according to an embodiment of the present application;

[0026] Figure 3 is a schematic structural diagram of a flattened member according to an embodiment of the present application;

[0027] Figure 4 is a schematic diagram of the structure of the first middleware according to an embodiment of the present application;

[0028] Figure 5 is a schematic diagram of the structure of the second middleware according to an embodiment of the present application;

[0029] Figure 6 is a schematic diagram of the structure of the fourth middleware according to an embodiment of the present application;

[0030] Figure 7 is a schematic structural diagram after a bottom anti-reflection layer is formed on the fourth middle piece according to an embodiment of the present application;

[0031] Figure 8 It is a schematic diagram of the structure after a photoresist layer is formed on the fourth intermediate component according to an embodiment of the present application. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present application, the present application is described in more detail below in conjunction with the accompanying drawings and specific embodiments. The preferred embodiments of the present application are provided in the accompanying drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described in this specification. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0033] It should be noted that, unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as those commonly understood by those skilled in the art of the present application. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used in this specification includes any and all combinations of one or more related listed items.

[0034] Figure 1 An embodiment of a method for manufacturing a semiconductor device of the present application is shown, comprising the steps of:

[0035] Step 1: Use a first solvent 10 to coat the surface of the workpiece 1 to be flattened to form a first intermediate workpiece 2;

[0036] Step 2, spin coating the flat coating 20 on the first intermediate member 2 to form the second intermediate member 3;

[0037] Step 3, heating the second intermediate member 3 from the side of the first intermediate member 2 away from the flat coating layer at the first temperature for a first time, so that a portion of the flat coating layer 20 is solidified upward from the first intermediate member 2 at the first temperature to form a third intermediate member;

[0038] Step 4: Remove the uncured flat coating of the third middle piece by using a second solvent to form a fourth middle piece 4 , wherein the upper surface of the fourth middle piece 4 is flat.

[0039] In the present application, the preparation of the flat coating 20 can be achieved by spin coating the flat coating 20 and heating and curing the bottom. By controlling the first time and the first temperature, the curing degree of the top of the flat coating 20 after heating is adjusted, and then the top of the flat coating 20 that is not completely cured in the third intermediate is physically dissolved and removed by the second solvent, thereby achieving surface flattening. Different from the method of first chemically vapor depositing a flattening material layer and then achieving flattening by etching or chemical mechanical grinding, the present application can prepare the flat coating 20 and spray the second solvent in the yellow light area. During the flattening process, there is no need to enter the chemical vapor deposition equipment or the chemical mechanical grinding equipment. It only needs to be operated in the yellow light area, and the process is simple. In other words, the flattening operation of the substrate surface can be achieved at a single lithography site, effectively reducing the process cycle and production cost. And the coating of the first solvent 10 can reduce the amount of the flat coating 20, further reducing the production cost.

[0040] In some embodiments, the flattened member 1 is a substrate including a surface pattern, and the substrate includes a semiconductor material. The substrate may be a wafer or an array substrate for manufacturing a display device; the pattern on the substrate may be a semiconductor pattern, a conductive pattern and / or an insulating pattern, etc.

[0041] In some embodiments, the flattened object 1 may be a wafer having a pattern, such as Figure 3 As shown. Or a wafer having a surface that needs to be flattened in any process. A wafer having a pattern is used as the flattened piece 1 for illustration. The raw material of the wafer can be single crystal silicon. Usually, the diameter of the wafer can range from 150 mm to 300 mm. The surface of the wafer can form transistors or metal wiring to have a pattern, but is not limited thereto. In some embodiments, the pattern on the surface of the wafer includes a pattern generated by patterning a single crystal silicon wafer.

[0042] After the pattern on the wafer is formed, the surface of the flattened member 1 is coated with the first solvent 10. The coating of the flattened member 1 by the first solvent 10 includes coating of the pattern on the substrate and coating of the gaps between the patterns, that is, the upper end surface of the flattened member 1 is completely coated.

[0043] Coating the surface of the flattened object 1 with the first solvent 10 includes spraying the surface of the flattened object 1 with the first solvent 10, the spraying speed of the first solvent 10 is 50ml / min-80ml / min, for example: 50ml / min, 60ml / min, 70ml / min, 75ml / min or 80ml / min. The spraying time is 2s-10s, for example: 2s, 3s, 5s, 7s or 10s.

[0044] The first solvent 10 can dissolve the uncured flat coating 20 that is subsequently spun on. By using the first solvent 10 to coat the flat piece 1, the surface of the flat piece 1 can be wetted, so that the flat coating 20 can easily cover the surface of the flat piece 1, thereby reducing the amount of the flat coating 20 used.

[0045] In some embodiments, the first solvent 10 may be one or more of cyclohexanon (CHN), propylene glycol methyl ether acetate (PGMEA), or propylene glycol monomethyl ether (PGME).

[0046] In some embodiments, the first solvent 10 is a mixture of propylene glycol methyl ether acetate and propylene glycol monomethyl ether. The mixing ratio of propylene glycol methyl ether acetate and propylene glycol monomethyl ether can be 10%-90%: 10%-90%.

[0047] In some embodiments, the mixing ratio of propylene glycol methyl ether acetate and propylene glycol monomethyl ether is 70%:30%, namely, photoresist thinner (OK73).

[0048] The flattened member 1 coated with the first solvent 10 is used as the first intermediate member 2. Figure 4 As shown. A flat coating 20 is spin-coated on the first intermediate member 2. The flat coating 20 may be one of a spin-on carbon layer (Spin On Carbon SOC), a bottom anti-reflection layer, or a silicon-based hard mask intermediate structure layer. The spin coating speed when the flat coating 20 is spin-coated is 1000r / min-4000r / min, for example: 1000r / min, 1500r / min, 2000r / min, 3000r / min or 4000r / min. The spin coating time is 1s-3s, for example: 1s, 1.5s, 2s, 2.5s or 3s. It can be understood that the flat coating 20 at least fills the gaps between the patterns.

[0049] After the first intermediate member 2 is spin-coated with the flat coating 20, the second intermediate member 3 is formed. Figure 5 At this time, the upper surface of the second intermediate member 3 is a first flat surface. At this time, due to the unevenness of the substrate with the pattern, the spin-coated flat coating 20 can improve its flatness, but cannot be completely flat. For example, the difference between the highest point and the lowest point on the first flat surface is less than 50 nanometers.

[0050] In some embodiments, at a first temperature, the second intermediate member 3 is heated for a first time from the side of the flattened member 1, i.e., the first intermediate member 2, away from the flattened coating 20, so that the material of the flattened coating 20 can undergo a cross-linking reaction at the first temperature and solidify, so that a portion of the flattened coating 20 in the second intermediate member 3 is solidified upward from the flattened member 1 to form a third intermediate member. It can be understood that by heating from the bottom, the bottom flattened coating 20 can be solidified before the top, the curing degree of the bottom is greater than the top, and the farther from the heating source, the lower the curing degree, so that a portion of the flattened coating 20 in the second intermediate member 3 is solidified upward from the flattened member 1. At the same time, the first solvent 10 evaporates and decreases at the first temperature, so that the content of the first solvent 10 in the third intermediate member is lower than that in the second intermediate member 3. In some embodiments, the first solvent 10 is completely volatilized after being heated at the first temperature for a first time.

[0051] The first time and the first temperature are determined according to the material of the flat coating 20. For example, when the flat coating 20 is SOC, when the temperature is higher than 150°C, the flat coating 20 can undergo a cross-linking reaction and solidify. Figure 2 As shown, under the premise of constant heating time, the higher the heating temperature, the greater the degree of curing of the flat coating 20. In one embodiment, when the first temperature is 230°C and the first time is 60s, the flat coating 20 is completely cured.

[0052] In some embodiments, the flat coating 20 is SOC, the first temperature is 150°C-185°C, for example, 150°C, 160°C, 170°C, 175°C, 180°C or 185°C, etc., and the first time is 60s-120s, for example, 60s, 80s, 90s, 110s or 120s, etc. In this embodiment, the curing degree of the bottom of the flat coating 20 can be greater than that of the top, and the top of the flat coating 20 is not completely cured and can be easily dissolved and removed by the second solvent.

[0053] In some embodiments, forming the third middle piece further comprises the steps of: cooling the second middle piece 3 after heating to a second temperature, such as Figure 5 The second temperature is 10°C-30°C, and can be 10°C, 15°C, 20°C, 23°C, 25°C, 30°C, etc. When the second intermediate member 3 is cooled, the state of the flat coating 20 does not change with the second temperature.

[0054] The curing degree of the flat coating 20 at the bottom of the third middle piece is greater than that at the top, and the top of the flat coating 20 is not completely cured. The farther away from the heating source, that is, the farther away from the bottom of the third middle piece, the lower the curing degree. A second solvent is sprayed onto the surface of the flat coating 20 of the third middle piece. The second solvent can dissolve and remove a portion of the flat coating 20, that is, the flat coating 20 that is not completely cured in the third middle piece, thereby forming a fourth middle piece 4. The more distant from the bottom of the third middle piece, the more is dissolved and removed, that is, the more convex positions of the flat coating 20 in the third middle piece are removed, and the less is removed at the more concave positions, thereby forming a second flat surface on the upper surface of the fourth middle piece 4, and the difference between the highest point and the lowest point on the second flat surface is reduced, for example, less than 5 nanometers, thereby achieving the flattening of the upper surface of the fourth middle piece 4. After the second solvent removes a portion of the flat coating 20 that is not completely cured in the third middle piece, the bottom-cured flat coating 20 remains in the fourth middle piece 4, such as Figure 6 shown.

[0055] In some embodiments, the second solvent includes one or more of cyclohexanone, propylene glycol methyl ether acetate or propylene glycol monomethyl ether. The second solvent may be the same as or different from the first solvent 10. The spraying speed of the second solvent is 50ml / min-80ml / min, for example: 50ml / min, 60ml / min, 70ml / min, 75ml / min or 80ml / min. The spraying time is 2s-60s, for example: 2s, 10s, 25s, 50s or 60s.

[0056] When the flat coating 20 is in an uncrosslinked and cured state, the second solvent is used to spray the flat coating 20, and the second solvent will completely remove the flat coating 20 from the third intermediate member. When the flat coating 20 is in a cured state, the second solvent is used to spray the flat coating 20, and the second solvent will not be able to remove the flat coating 20 from the third intermediate member.

[0057] When the top of the flat coating 20 is removed by using the second solvent, adjusting the first time and the first temperature can adjust the crosslinking and curing degree of the flat coating 20. Within the same first time, the higher the first temperature, the higher the curing degree of the flat coating 20. The lower the first temperature, the lower the curing degree of the flat coating 20. By controlling the first time and the first temperature, the curing degree of the flat coating 20 from bottom to top can be controlled. For example, as shown in Table 1, under the same heating time, the higher the heating temperature, the less the uncured portion of the flat coating 20, and the smaller the thickness of the top removed.

[0058] Table 1 Removal thickness of the uncured flat coating by the second solvent at different temperatures

[0059]

[0060] Combining Table 1 and Figure 2 As shown, when the second solvent is OK73 and the flat coating is SOC, the thickness of the flat coating 20 before removal is set to The spraying speed of the second solvent is set to 75 ml / min, the spraying time is set to 10 s, and the first time is set to 60 s. When the first temperature is 0°C, the flat coating 20 is removed by the second solvent. At this time, the flat coating 20 is in a completely uncured state. The thickness of the flat coating 20 after the second solvent removes it is The second solvent can completely remove the flat coating 20, and the uncured portion of the flat coating 20 is 100%. When the first temperature is 185°C, the flat coating 20 is removed by the second solvent. At this time, the bottom of the flat coating 20 is cured but the top is not completely cured. The thickness of the flat coating 20 removed by the second solvent is The uncured portion of the flat coating 20 is 66.04%, that is, more than half of the flat coating 20 is removed. When the first temperature is 205°C, the flat coating 20 is removed by the second solvent. At this time, the bottom of the flat coating 20 is cured but the top is not completely cured. The thickness of the flat coating 20 after the second solvent removes the flat coating 20 is The uncured portion of the flat coating 20 is 1.54%. When the first temperature is 215°C, the flat coating 20 is removed by the second solvent. At this time, the bottom of the flat coating 20 is cured but the top is not completely cured. The thickness of the flat coating 20 after the second solvent removes the flat coating 20 is The uncured portion of the flat coating 20 is 1.00%. That is to say, when the first temperature is 205°C and 215°C, only a very small portion of the flat coating 20 can be removed. This is also the reason why the first temperature is set to 150°C-180°C in the above embodiment. Within this temperature range, it is possible to avoid the situation where the temperature is high and the flat coating 20 is basically completely cured, and the curing degree cannot be reduced as the distance from the bottom decreases, which results in the second flat surface still having a low flatness after the second solvent dissolves the uncured flat coating 20. When the first temperature is 215°C, the flat coating 20 is coated with the second solvent, but at this time the flat coating 20 is in a cured state. After the second solvent is used, the thickness of the flat coating 20 is still . The uncured portion of the flat coating layer 20 is 0.00%. At this point, the second solvent can no longer remove the flat coating layer 20.

[0061] It can also be understood that increasing / decreasing the first time can increase / decrease the curing degree of the flat coating 20 .

[0062] It can be seen from the above that at different first times and different first temperatures, the flat coating 20 has different degrees of curing. By controlling the first temperature and the first time, it can be achieved that: the flat coating 20 at the same horizontal position has different degrees of curing at different distances from the bottom of the flattened piece 1, the closer to the bottom of the flattened piece 1, the higher the degree of curing, the farther from the bottom of the flattened piece 1, the lower the degree of curing; at the same time, for the flat coating 20 at the uneven pattern, the flat coating 20 at the concave part is closer to the heat source, and the curing from the bottom to the top is more, while the flat coating 20 at the convex part is farther from the heat source, and the curing from the bottom to the top is less. In this way, the second solvent can be used to remove the part with a lower degree of curing, so that the flatness of the second flat surface meets expectations.

[0063] The semiconductor device manufacturing method further includes: step five, such as Figure 7 As shown, the bottom anti-reflection layer is spin-coated on the fourth intermediate member 4, and then heated, and the heating temperature is greater than 220° C. to completely cure the (possible) incompletely cured flat coating 20. Optionally, the fourth intermediate member 4 after the bottom anti-reflection layer 30 is spin-coated and heated is also cooled by a cold plate. Figure 8 As shown, a photoresist layer 40 is coated on the surface of the fourth intermediate member 4 or on the surface of the bottom anti-reflection layer 30 after heating for subsequent photolithography process. In the photolithography process, the cured flat coating layer 20 can also be used as a hard mask.

[0064] If the fourth intermediate piece 4 is not flattened enough, steps 2 to 4 can be repeated multiple times to flatten the surface of the flattened piece 1. The fourth intermediate piece 4 is used as a new round of first intermediate piece 2 to flatten the upper surface of the flattened piece 1, and finally the upper surface of the flattened piece 1 is flattened.

[0065] In the present application, the preparation of the flat coating in the present application can be achieved by spin coating the flat coating and heating and curing the bottom. By controlling the first time and the first temperature, the curing degree of the top of the flat coating after heating is adjusted, and then the top of the flat coating that is not completely cured in the third intermediate is physically dissolved and removed by the second solvent, thereby achieving surface flattening. Different from the method of first chemically vapor depositing a flattening material layer and then achieving flattening by etching or chemical mechanical grinding, the present application can prepare the flat coating and spray the second solvent in the yellow light area. During the flattening process, there is no need to enter the chemical vapor deposition equipment or the chemical mechanical grinding equipment. It only needs to be operated in the yellow light area, and the process is simple. In other words, the flattening operation of the substrate surface can be achieved at a single lithography site, effectively reducing the process cycle and production cost. And the coating of the first solvent can reduce the amount of the flat coating, further reducing the production cost.

[0066] Based on the same inventive concept, an embodiment of the present application further provides a semiconductor device, which is manufactured using the above-mentioned semiconductor device manufacturing method.

[0067] The above are merely embodiments of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structural transformations made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for manufacturing a semiconductor device, characterized in that: Includes steps: Step 1, coating the surface of the workpiece to be flattened with a first solvent to form a first intermediate workpiece; Step 2, spin coating a flat coating on the first intermediate member to form a second intermediate member; Step 3, heating the second intermediate member from the side of the first intermediate member away from the flat coating layer at a first temperature for a first time, so that a portion of the flat coating layer is solidified upward from the first intermediate member at the first temperature to form a third intermediate member; Step 4: removing the uncured flat coating of the third middle piece by using a second solvent to form a fourth middle piece, wherein the upper surface of the fourth middle piece is flat.

2. The method according to claim 1, characterized in that: The object to be flattened is a substrate including a surface pattern, and the substrate includes a semiconductor material.

3. The method according to claim 1, characterized in that The first solvent can dissolve the uncured flat coating, and the first solvent includes one or more of cyclohexanone, propylene glycol methyl ether acetate, or propylene glycol monomethyl ether.

4. The method according to claim 1, characterized in that The second solvent can dissolve the uncured flat coating, and the second solvent includes one or more of cyclohexanone, propylene glycol methyl ether acetate, or propylene glycol monomethyl ether.

5. The method according to claim 1, characterized in that The content of the first solvent in the third intermediate member is lower than that in the second intermediate member.

6. The method according to claim 1, characterized in that The first solvent and the second solvent can both dissolve the uncured flat coating, and the first solvent and the second solvent are both a mixture of propylene glycol methyl ether acetate and propylene glycol monomethyl ether.

7. The method according to claim 1, characterized in that The flat coating layer can be cured by a cross-linking reaction at the first temperature, and the flat coating layer includes a spin-on carbon layer, a photoresist layer, a bottom anti-reflection layer or a silicon-based hard mask intermediate structure layer.

8. The method according to claim 1, 6 or 7, characterized in that: The flat coating can undergo a cross-linking reaction at the first temperature to be cured, the flat coating is a spin-coated carbon layer, the first time is 60s-120s, and the first temperature is 150°C-180°C.

9. The method according to claim 8, characterized in that Using the first solvent to coat the entire surface of the flattened part includes spraying the first solvent at a speed of 50ml / min-80ml / min for 2s-10s; using the second solvent to remove the uncured flat coating on the third intermediate part includes spraying the second solvent at a speed of 50ml / min-80ml / min for 2s-60s.

10. The method according to claim 8, characterized in that The semiconductor device manufacturing method further includes: Step 5: spin-coat a bottom anti-reflection layer on the fourth intermediate member, and heat the fourth intermediate member at a heating temperature greater than 220° C. to completely cure the flat coating.

11. The method according to claim 1, characterized in that: The steps 2 to 4 may be repeated multiple times to flatten the workpiece multiple times.

12. A semiconductor device, characterized in that: The semiconductor device is manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 11.

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