Capacitance film vacuum gauge and semiconductor equipment

Abstract

The invention provides a capacitance thin film vacuum gauge and semiconductor equipment, the capacitance thin film vacuum gauge comprises a shell, an induction diaphragm, a fixed electrode and a substrate, the induction diaphragm is fixed in the shell and divides an inner cavity of the shell into a reference cavity and a measurement cavity; the fixed protruding part of the shell protrudes from the inner wall of the shell to the interior of the shell in the radial direction of the shell, the fixed protruding part is used for supporting the base plate, and the induction diaphragm is located between the fixed protruding part and the base plate in the axial direction of the shell. The surface, facing the sensing diaphragm, of the substrate comprises a groove, the groove is recessed away from the sensing diaphragm, and the bottom of the groove is used for fixing the fixed electrode. The substrate is directly fixed on the sensing diaphragm, the arrangement of structural members between the substrate and the sensing diaphragm is reduced, the processing tolerance is reduced, the structure is simplified, the assembling and debugging difficulty is reduced, the temperature influence on the gap between the sensing diaphragm and the fixed electrode only depends on the CTE of the single structural member of the groove of the substrate, and the detection stability and the detection precision are improved.

Description

Technical Field

[0001] The present application relates to the technical field of vacuum gauges, and in particular to a capacitance film vacuum gauge and a semiconductor device. Background Art

[0002] A vacuum gauge is an instrument for detecting air pressure or vacuum in a closed environment. It is currently widely used in fields such as outer space aerial survey, heat treatment processing, and semiconductor precision instruments. Capacitive vacuum gauges mainly use changes in air pressure to cause elastic deformation of the diaphragm, thereby causing changes in the distance between the capacitor plates. The conversion circuit converts the capacitor response signal into a voltage signal to complete the measurement of air pressure. The capacitor response mode is a key factor affecting performance specifications such as component detection accuracy, linearity, and sensitivity. At present, the capacitor gap is affected by the processing and assembly tolerances of multiple structural parts, making it difficult to ensure batch consistency. It is especially difficult to control sensors with a small range of gaps less than 50μm. In addition, the capacitor gap is greatly affected by temperature, which reduces the detection stability and accuracy of the capacitor film vacuum gauge. Summary of the invention

[0003] The present application provides a capacitance film vacuum gauge and a semiconductor device, which are used to solve the technical problem of decreased detection stability and detection accuracy of the capacitance film vacuum gauge.

[0004] In the first aspect, the present application provides a capacitance film vacuum gauge, which includes a housing, a sensing diaphragm, a fixed electrode and a substrate. The sensing diaphragm is fixed in the housing and divides the inner cavity of the housing into a reference cavity and a measuring cavity. The measuring cavity is used to accommodate the gas flow to be measured, and the reference cavity is used to accommodate the fixed electrode and the substrate. The housing includes a fixed protrusion, which protrudes from the inner wall of the housing toward the inside of the housing along the radial direction of the housing, and the fixed protrusion is used to support the substrate. The sensing diaphragm is located between the fixed protrusion and the substrate along the axial direction of the housing. The surface of the substrate facing the sensing diaphragm includes a groove, and the groove is concave away from the sensing diaphragm, and the bottom of the groove is used to fix the fixed electrode.

[0005] In the embodiment of the present application, the housing is used to accommodate the sensing diaphragm, the fixed electrode and the substrate. When the capacitance film vacuum gauge is working, the housing can also isolate the influence of the airflow in the external environment on the pressure of the reference cavity and the measuring cavity, so that the measurement result is accurate. The sensing diaphragm is fixed in the housing and the inner cavity of the housing is divided into a reference cavity and a measuring cavity, so that the airflow in the capacitance film vacuum gauge can be separated into the target pressure airflow contained in the reference cavity and the two areas of the airflow to be measured contained in the measuring cavity. The sensing diaphragm is a metal material with elastic deformation force and conductive properties. When the pressure in the airflow to be measured is different from the pressure of the airflow in the reference cavity, the sensing diaphragm undergoes elastic deformation, and the sensing diaphragm cooperates with the fixed electrode to form a capacitor. The capacitance signal is converted into a current signal or a voltage signal output through the conversion circuit in the capacitance film vacuum gauge, and then the pressure value of the airflow to be measured is detected. Exemplarily, the sensing diaphragm can be fixed in the housing by bonding, welding, crimping, etc.

[0006] In an embodiment of the present application, the shell includes a fixed protrusion, which protrudes from the inner wall of the shell along the radial direction of the shell, providing a possibility for the substrate to be fixed to the fixed protrusion. The fixed protrusion is used to support the substrate, and the sensing diaphragm is located between the fixed protrusion and the substrate along the axial direction of the shell, that is, the substrate is directly fixed to the sensing diaphragm. In an embodiment of the present application, when the ambient temperature rises, the change in the gap between the sensing diaphragm and the fixed electrode is mainly affected by the groove depth of the groove, or the change in the gap between the sensing diaphragm and the fixed electrode is mainly affected by the change in the temperature of the substrate material where the groove wall of the groove is located, wherein, in order to ensure the accuracy of the capacitance change, the distance between the sensing diaphragm and the fixed electrode is generally small, so the length of the substrate where the groove wall of the groove is located along the axial direction of the shell is also small, so that when the ambient temperature rises, the distance between the sensing diaphragm and the fixed electrode changes very little, thereby improving the temperature stability of the capacitance film vacuum gauge and reducing the accuracy loss caused by temperature.

[0007] If the capacitance film vacuum gauge fixes the substrate to the sensing diaphragm through multiple structural parts such as support rings, gaskets, step portions or roller bearings, there are multiple structural parts such as support rings, gaskets, step portions or roller bearings between the sensing diaphragm and the substrate. Among them, multiple structural parts such as support rings, gaskets, step portions or roller bearings increase the processing tolerance, making the consistency of the product worse. And when the ambient temperature rises, the expansion degree of multiple structural parts such as support rings, gaskets, step portions or roller bearings away from the sensing diaphragm is large. Although part of the substrate fixed with fixed electrodes will expand toward the sensing diaphragm, the support rings, gaskets, step portions or roller bearings and other structural parts are large in the overall axial length of the shell and the thermal expansion coefficient is not the same as that of the substrate, and can even be nearly twice as high (such as when the structural parts use metal materials and the substrate uses ceramic materials), so that the gap between the substrate and the sensing diaphragm changes greatly, thereby making the detection accuracy of the capacitance film vacuum gauge worse when the temperature rises, and the detection accuracy will also deteriorate in an extremely cold environment. Therefore, the capacitive diaphragm vacuum gauge in the embodiment of the present application fixes the substrate directly to the sensing diaphragm, which can reduce the influence of the processing tolerances of multiple structural parts on the gap between the fixed electrode and the sensing diaphragm, improve product consistency, improve product quality, and also reduce the number of parts used, simplify the structure, reduce the difficulty of assembly and debugging, and improve the temperature stability of the capacitive diaphragm vacuum gauge and reduce the accuracy loss caused by temperature.

[0008] In the embodiment of the present application, the fixed electrode is conductive, and the structural material of the substrate is an insulating material. The substrate is insulated to reduce the crosstalk between the multiple detection electrodes at the bottom, thereby ensuring the detection accuracy of the capacitance film vacuum gauge. The surface of the substrate facing the sensing diaphragm includes a groove, which provides space for the fixed electrode to be installed and fixed to the substrate. The groove is recessed away from the sensing diaphragm, which is conducive to having sufficient installation space when the fixed electrode is fixed to the groove. It can also allow a gap between the fixed electrode and the sensing diaphragm, further allowing the sensing diaphragm to have sufficient deformation space, which is conducive to the normal operation of the capacitance film vacuum gauge.

[0009] In the embodiment of the present application, the fixed protrusion is used to support the substrate, and the substrate is directly overlapped on the fixed protrusion, and multiple structural parts such as support rings, gaskets, step portions or roller bearings are not needed, so that the length of the fixed protrusion along the radial direction of the shell is reduced, so that the substrate exposes a larger surface relative to the sensing diaphragm, that is, the actual working surface is enlarged, so that the lower surface of the substrate can fix more fixed electrodes or the distribution position of the electrodes has more space, thereby improving the detection accuracy of the capacitance film vacuum gauge. In order to fix the support ring and the gasket, the step portion also needs to form a support groove on the surface of the step portion, and the support groove is used to accommodate the support ring. In order to process the support groove, a larger area needs to be reserved for the step portion, so that the length of the step portion along the radial direction of the shell becomes longer, thereby making the actual working surface of the substrate relative to the sensing diaphragm smaller, and the detection accuracy of the capacitance film vacuum gauge is reduced. In the present application, there is no need to reserve processing space in the fixed protrusion, so that the fixed protrusion can be made smaller as long as it can support the substrate, thereby increasing the actual working surface of the substrate, so the embodiment of the present application has higher detection accuracy.

[0010] In one embodiment, the housing is made of metal material, and the substrate is made of ceramic material.

[0011] In an embodiment of the present application, the groove is located on the surface of the substrate facing the sensing diaphragm, the fixed electrode is located at the bottom of the groove, the sensing diaphragm is located between the fixed protrusion and the substrate, the substrate and the groove are both made of ceramic materials, the CTE of the substrate and the groove are the same, the fixed protrusion is part of the shell, and the fixed protrusion is made of metal material, so that the width change of the gap between the fixed electrode and the sensing diaphragm is mainly affected by the single structural component of the groove, which is beneficial to improving the detection accuracy of the capacitive film vacuum gauge.

[0012] In one embodiment, the sensing diaphragm includes a fixed area and a working area, the fixed area surrounds the outer periphery of the working area, the fixed area is used to fix the shell, there is a gap between the working area and the fixed electrode, and the distance between the surface of the fixed area facing the substrate along the axial direction of the shell and the substrate is smaller than the distance between the working area and the fixed electrode.

[0013] In the embodiment of the present application, the fixing area of ​​the sensing diaphragm is used to fix the sensing diaphragm to the shell, so that the sensing diaphragm can separate the inner cavity of the shell into a measuring cavity and a reference cavity. The fixing area surrounds the outer periphery of the working area, which is conducive to firmly fixing the sensing diaphragm to the shell, and is also conducive to dispersing the stress on the edge of the sensing diaphragm when it is deformed, thereby extending the service life of the sensing diaphragm.

[0014] In the embodiment of the present application, there is a gap between the working area and the fixed electrode, and the gap provides deformation space for the sensing diaphragm. A part of the fixed area is fixed to the fixed protrusion of the shell, and the distance between the surface of the fixed area facing the substrate along the axial direction of the shell and the substrate is small, which is conducive to reducing the zero drift caused by the difference in thermal expansion coefficient between the fixed protrusion and the substrate. The distance between the working area and the fixed electrode is large, which is conducive to providing sufficient space for the sensing diaphragm to deform. The distance between the surface of the fixed area facing the substrate along the axial direction of the shell and the substrate is smaller than the distance between the working area and the fixed electrode, which is conducive to the formation of a groove on the surface of the substrate facing the sensing diaphragm.

[0015] In one embodiment, a surface of the fixing area facing the substrate along the axial direction of the housing contacts the substrate and the fixing protrusion.

[0016] In the embodiment of the present application, the surface of the shell axially fixed area facing the substrate is in contact with the substrate, that is, the distance between the surface of the shell axially fixed area facing the substrate and the substrate is zero, and the substrate is directly fixed to the fixed area of ​​the sensing diaphragm, which is beneficial to reducing the influence of the gap between the working area and the fixed electrode on the expansion deformation of the substrate and the fixed protrusion caused by the increase in temperature.

[0017] In an embodiment of the present application, the substrate is directly fixed to the fixed area of ​​the sensing diaphragm, and there is a gap between the working area and the fixed electrode. The width of the gap along the axial direction of the shell can be controlled by controlling the depth of the groove. In addition, the change of the gap width between the sensing diaphragm and the fixed electrode of the capacitance film vacuum gauge with temperature is mainly determined by the CTE of the groove wall material. Compared with the gap width between the sensing diaphragm and the substrate being determined by the CTE of multiple structural parts such as the support ring, gasket, and step portion, the zero point temperature coefficient can be effectively reduced.

[0018] In one embodiment, the distance between the fixed electrode and the inner wall of the shell along the radial direction of the shell is greater than the length of the fixing protrusion.

[0019] In the embodiment of the present application, the distance between the fixed electrode and the inner wall of the shell along the radial direction of the shell is greater than the length of the fixed protrusion, which can ensure that the fixed electrode and the working area of ​​the sensing diaphragm along the axial direction of the shell are arranged relative to each other, and the normal operation of the capacitance film vacuum gauge is guaranteed. If the distance between the fixed electrode and the inner wall of the shell along the radial direction of the shell is less than the length of the fixed protrusion, a part of the fixed electrode will correspond to the fixed area of ​​the sensing diaphragm. Then, during the operation of the capacitance film vacuum gauge, since the fixed area of ​​the sensing diaphragm is fixed, the change in the gap between the sensing diaphragm and the fixed electrode is larger than the actual situation, which affects the detection result and is not conducive to the normal operation of the capacitance film vacuum gauge.

[0020] In one embodiment, the groove is integrally formed on the surface of the substrate facing the sensing diaphragm.

[0021] In the embodiment of the present application, the gap between the working area of ​​the sensing diaphragm and the fixed electrode is controlled by the depth of the groove along the axial direction of the shell, and the groove is integrally formed on the surface of the substrate facing the sensing diaphragm, which is conducive to reducing the gap between the working area of ​​the sensing diaphragm and the fixed electrode due to the difference in CTE of the substrate and the sensing diaphragm when the substrate is in fixed contact, improving the temperature coefficient performance of the capacitance film vacuum gauge, and also helping to simplify the assembly structure, reduce the difficulty of assembly, and improve product consistency. Exemplarily, the groove bottom and the groove wall are the same as the substrate integrally formed material, both of which are ceramic materials.

[0022] In one embodiment, the substrate includes a substrate body and an annular support portion. The substrate body includes a bottom surface facing the sensing diaphragm. The bottom surface is a plane and is used to fix the annular support portion and the electrode. The annular support portion and the bottom surface form a groove.

[0023] In the embodiment of the present application, the groove peripheral wall of the groove is formed by an annular support portion, and the annular support portion and the substrate body can be a separate structure, which is conducive to reducing the difficulty of processing the groove and making the shape design of the groove more flexible. In the actual product, the annular support portion is annular.

[0024] In the embodiment of the present application, the substrate body includes a bottom surface facing the sensing diaphragm, which is conducive to the installation and fixation of the fixed electrode. The bottom surface is flat, which is conducive to the horizontal arrangement of the fixed electrode and also conducive to simplifying the processing technology of the substrate body.

[0025] In the embodiment of the present application, the bottom surface is used to fix the annular support part and the fixed electrode. The substrate body is fixed to the fixed area of ​​the sensing diaphragm through the annular support part. Along the axial direction of the shell, the fixed protrusion, the fixed area of ​​the sensing diaphragm, the annular support part, and the substrate body are stacked in sequence. The gap between the working area of ​​the sensing diaphragm and the fixed electrode can be adjusted by controlling the thickness of the annular support part along the axial direction. The zero drift of the gap between the working area of ​​the sensing diaphragm and the fixed electrode caused by the temperature is mainly affected by the CTE difference between the annular support part and the substrate body material, which is conducive to reducing the change of the gap caused by temperature, reducing the zero temperature coefficient, and improving the detection accuracy of the capacitance film vacuum gauge.

[0026] In the embodiment of the present application, the annular support portion and the bottom surface form a groove, which is conducive to generating a gap between the working area of ​​the sensing diaphragm and the fixed electrode fixed to the bottom surface of the substrate body, providing sufficient deformation space for the working area of ​​the sensing diaphragm.

[0027] In one embodiment, the annular support portion includes two end surfaces that are opposite to each other along the axial direction of the shell, and an area of ​​one end surface of the annular support portion close to the substrate body is greater than or equal to an area of ​​the other end surface.

[0028] In the embodiment of the present application, one of the two end faces of the annular support portion that are opposite to each other along the axial direction of the shell contacts the substrate body, and the other end face contacts the fixing area of ​​the sensing diaphragm, so that the substrate body is indirectly fixed to the fixing area of ​​the sensing diaphragm. The area of ​​one end face of the annular support portion close to the substrate body is greater than or equal to the area of ​​the other end face, and the area of ​​one end face of the annular support portion close to the substrate body is larger, which is beneficial for the annular support portion to be closer to the substrate body when the sensing diaphragm is deformed upward along the axial direction of the shell, and is beneficial for improving the structural integrity of the substrate body and the annular support portion in the substrate.

[0029] In the embodiment of the present application, when the capacitance diaphragm vacuum gauge is just shipped from the factory, the gas in the external environment will enter the measuring chamber, causing the sensing diaphragm to deform. If the annular support portion is in excessive contact with the working area of ​​the sensing diaphragm, the part where the sensing diaphragm and the annular support portion abut against each other will easily cause a force to be applied to the sensing diaphragm, causing damage to the sensing diaphragm and shortening the service life of the sensing diaphragm.

[0030] In one embodiment, the length of one end of the annular support portion away from the inner wall of the shell along the axial direction of the shell gradually increases from the side away from the inner wall of the shell to the side close to the inner wall of the shell.

[0031] In the embodiment of the present application, when the capacitance film vacuum gauge is just shipped, the gas in the external environment will enter the measuring cavity and cause the sensing diaphragm to deform. The length of the end of the annular support portion away from the inner wall of the shell along the axial direction of the shell gradually increases from the side away from the inner wall of the shell to the side close to the inner wall of the shell, so that the sensing diaphragm exerts an upward force on the annular support portion, which is conducive to the annular support portion being more tightly fixed to the substrate body. Exemplarily, the length of the end of the annular support portion away from the inner wall of the shell along the axial direction of the shell gradually increases from the side away from the inner wall of the shell to the side close to the inner wall of the shell, which is manifested as the cross-sectional shape of the annular support portion along the radial direction of the shell being a single-sided trapezoid or a double-sided trapezoid.

[0032] In one embodiment, the capacitance film vacuum gauge further includes an annular elastic member, which is used to fasten the fixing protrusion and the substrate, and the housing further includes a cover plate, the cover plate and the annular elastic member are arranged opposite to each other along the axial direction of the housing, one end of the annular elastic member is fixed to the cover plate of the housing along the axial direction of the housing, and the other end of the annular elastic member is fixed to the substrate. The free length of the annular elastic member is greater than the spacing between the cover plate and the substrate.

[0033] In the embodiment of the present application, the free length of the annular elastic member is greater than the distance between the cover plate and the substrate. One end of the annular elastic member is fixed to the cover plate of the shell along the axial direction of the shell, and the other end of the annular elastic member is fixed to the substrate, so that the annular elastic member has a downward elastic force on the substrate along the axial direction of the shell, so that a tightening is formed between the substrate and the fixed protrusion, so that the sensing diaphragm is more stably fixed between the substrate and the fixed protrusion.

[0034] In one embodiment, the annular elastic member is a corrugated spring, which has a small contact point and is not likely to deform the substrate.

[0035] In one embodiment, the capacitance diaphragm vacuum gauge further includes a support member, which is used to fix the annular elastic member, and the support member is clamped between the other end of the annular elastic member and the substrate along the axial direction of the shell.

[0036] In the embodiment of the present application, when the stroke height of the annular elastic member cannot meet the distance requirement between the cover plate and the substrate, a support member can be added at the other end of the annular elastic member, and the support member can provide an axial length for the annular elastic member so that the stroke height of the annular elastic member meets the distance requirement between the cover plate and the substrate. In one embodiment, the annular elastic member is annular, and the support member used to support the annular elastic member is also annular.

[0037] In one embodiment, the housing further comprises a bottom plate, which is located on the side of the sensing diaphragm away from the base plate, and the bottom plate and the sensing diaphragm together form a measuring cavity, and the bottom plate comprises an air inlet hole, and the air inlet hole is used to input the airflow to be measured into the measuring cavity. The surface of the bottom plate facing the sensing diaphragm comprises at least one dust collecting groove, and the at least one dust collecting groove surrounds the outer periphery of the air inlet hole along the radial direction of the housing, and the notch of each dust collecting groove faces the sensing diaphragm, and each dust collecting groove is used to collect solid impurities in the airflow to be measured.

[0038] In the embodiment of the present application, the bottom plate is located on the side of the sensing diaphragm away from the substrate, which is conducive to the bottom plate and the sensing diaphragm enclosing a measuring cavity, which is used to accommodate the airflow to be measured. The difference between the pressure in the airflow to be measured and the pressure in the reference cavity can cause elastic deformation of the working area of ​​the sensing diaphragm. The bottom plate includes an air inlet hole, which is used to input the airflow to be measured into the measuring cavity, so that the sensing diaphragm can contact the airflow to be measured, so that the vacuum degree of the airflow to be measured can be measured through the deformation of the sensing diaphragm, which is conducive to real-time grasp of the vacuum degree, ensuring the fine processing of semiconductor structural parts, and improving the product quality of semiconductor structural parts.

[0039] In the embodiment of the present application, the surface of the bottom plate facing the sensing diaphragm includes at least one dust collecting groove, and the at least one dust collecting groove is arranged on the surface of the bottom plate facing the sensing diaphragm, which is conducive to the at least one dust collecting groove contacting with the airflow to be measured and collecting solid impurities in the airflow to be measured. At least one dust collecting groove surrounds the outer periphery of the air inlet hole along the radial direction of the shell, which is conducive to the airflow to be measured entering the measuring cavity. The airflow to be measured can pass through at least one dust collecting groove in any direction along the radial direction of the shell, so that at least one dust collecting groove collects solid impurities in the airflow to be measured, thereby helping to reduce the contamination of the sensing diaphragm by solid impurities in the gas to be measured, prolong the service life of the sensing diaphragm, and improve the detection accuracy of the capacitance film vacuum gauge. The capacitance film vacuum gauge is used to detect the vacuum degree of the chamber environment in the semiconductor device processing device, and to provide real-time feedback on the vacuum degree of the chamber, so as to control and ensure that the semiconductor device processing is in a vacuum environment, which is conducive to the smooth fine processing of semiconductor structural parts.

[0040] In the embodiment of the present application, the notch of each dust collecting groove faces the sensing diaphragm, which is conducive to the solid impurities in the airflow to be measured falling into the dust collecting groove from the notch of each dust collecting groove, thereby realizing the collection of the solid impurities in the airflow to be measured.

[0041] In one embodiment, at least one dust collecting groove includes two groups of dust collecting grooves, and each group of dust collecting grooves includes at least one dust collecting groove. In the radial direction of the shell, the air inlet, one group of dust collecting grooves, and another group of dust collecting grooves are arranged in sequence, and the distance between the bottom of each dust collecting groove in one group of dust collecting grooves and the sensing diaphragm is greater than the distance between the bottom of each dust collecting groove in the other group of dust collecting grooves and the sensing diaphragm.

[0042] In the embodiment of the present application, at least one dust collecting groove includes two groups of dust collecting grooves, and the two groups of dust collecting grooves form a secondary impurity removal. The design of the two groups of dust collecting grooves is conducive to more adsorption of solid impurities in the airflow to be measured. Each group of dust collecting grooves includes at least one dust collecting groove, which is conducive to more solid impurities in the airflow to be measured being collected in the dust collecting groove.

[0043] In an embodiment of the present application, an air inlet, a group of dust collecting grooves, and another group of dust collecting grooves are arranged in sequence along the radial direction of the shell, which is beneficial for the measured airflow to enter the measuring cavity from the air inlet, collect the solid impurities in the measured airflow through a group of dust collecting grooves, and then collect the solid impurities in the measured airflow through another group of dust collecting grooves. This is beneficial to further improve the cleanliness of the measured airflow, reduce the amount of solid impurities attached to the sensing diaphragm, and ensure that under harsh working conditions, the solid impurities have sufficient space to attach and accumulate, which is beneficial to ensuring the normal operation of the capacitive diaphragm vacuum gauge, and also beneficial to improving the detection accuracy and detection stability of the capacitive diaphragm vacuum gauge and prolonging its service life.

[0044] In an embodiment of the present application, the distance between the bottom of each dust collecting groove in one group of dust collecting grooves and the sensing diaphragm is greater than the distance between the bottom of each dust collecting groove in another group of dust collecting grooves and the sensing diaphragm, which is beneficial for the air flow to be measured entering from the air inlet to flow through each dust collecting groove of one group of dust collecting grooves and each dust collecting groove of the other group of dust collecting grooves in the axial direction of the shell in sequence, so that the gas to be measured can flow smoothly in the measuring chamber along the overall axial direction of the shell.

[0045] In one embodiment, along the radial direction of the shell, the groove width of each dust collecting groove in one group of dust collecting grooves is greater than the groove width of each dust collecting groove in another group of dust collecting grooves.

[0046] In the embodiment of the present application, along the radial direction of the shell, the groove width of each dust collecting groove in one group of dust collecting grooves is greater than the groove width of each dust collecting groove in another group of dust collecting grooves. When the airflow to be measured enters the measuring chamber from the air inlet, the groove width of each dust collecting groove in one group of dust collecting grooves is larger, which is conducive to reducing the resistance of the airflow to be measured entering the one group of dust collecting grooves, so that more airflow to be measured enters the one group of dust collecting grooves, and is also conducive to increasing the residence time of the airflow to be measured in the one group of dust collecting grooves, so that more solid impurities are adsorbed by the one group of dust collecting grooves. The groove width of each dust collecting groove in the other group of dust collecting grooves is smaller, which is conducive to forming turbulence of the airflow to be measured in each dust collecting groove in the other group of dust collecting grooves, so that the airflow to be measured is more in contact with the groove wall of each dust collecting groove in the other group of dust collecting grooves, so that more solid impurities are deposited, thereby reducing the solid impurities in the airflow to be measured, reducing the number of solid impurities attached to the sensing diaphragm when the airflow to be measured contacts the sensing diaphragm, improving the detection stability of the sensing diaphragm, and extending the service life of the sensing diaphragm.

[0047] In one embodiment, the capacitance film vacuum gauge further includes a buffer plate and a guide plate, which are fixed to the bottom plate, the buffer plate is used to buffer the impact force of the measured airflow on the sensing diaphragm, and the guide plate is used to increase the path length of the measured airflow flowing in the measuring chamber, and along the axial direction of the shell, the air inlet hole, the buffer plate, the guide plate, and the sensing diaphragm are arranged in sequence. The buffer plate and the guide plate include at least one guide hole, and each guide hole is opposite to the notch of at least one dust collecting groove along the axial direction of the shell.

[0048] In an embodiment of the present application, a buffer plate and a guide plate are fixed to the bottom plate, and the measuring cavity accommodates the buffer plate and the guide plate, so that the airflow to be measured can flow through the buffer plate and the guide plate. The buffer plate is used to buffer the impact force of the airflow to be measured on the sensing diaphragm, protect the elastic deformation capacity of the sensing diaphragm, and also help to reduce the solid impurities attached to the sensing diaphragm directly impacted by the airflow to be measured, thereby extending the service life of the sensing diaphragm. The guide plate is used to increase the path length of the airflow to be measured flowing in the measuring cavity. When the airflow to be measured flows through the guide plate, the guide plate can attach some of the impurity particles in the airflow to be measured, thereby reducing the number of impurity particles attached when the airflow to be measured contacts the sensing diaphragm.

[0049] In the embodiment of the present application, the air inlet, the buffer plate, the guide plate, and the sensing diaphragm are arranged in sequence along the axial direction of the shell, and the airflow to be measured flows from the air inlet through the buffer plate, the guide plate, and the sensing diaphragm in sequence, which not only weakens the impact of the airflow to be measured on the sensing diaphragm, but also reduces the adhesion of fixed impurities in the airflow to be measured to the sensing diaphragm, which is beneficial to extending the service life of the sensing diaphragm, and is also beneficial to improving the detection stability of the capacitive film vacuum gauge and reducing drift.

[0050] In an embodiment of the present application, the buffer plate and the guide plate include at least one guide hole, so that the airflow to be measured entering the measuring chamber from the air inlet can pass through the buffer plate and the guide plate from at least one guide hole to reach the sensing diaphragm. Along the axial direction of the shell, each guide hole is opposite to the notch of at least one dust collecting groove, so that after the airflow to be measured enters from the air inlet, it can flow out from the guide hole of the buffer plate to the guide plate after being fully contacted in a group of dust collecting grooves. The guide plate guides the gas to be measured to flow into another group of dust collecting grooves, and the airflow to be measured generates turbulence in the other group of dust collecting grooves to fully contact the groove wall, and then can flow out from the guide hole of the guide plate to the sensing diaphragm, so that more solid impurities in the airflow to be measured are adsorbed and precipitated, reducing the pollution of the sensing diaphragm. The buffer plate and the guide plate include at least one guide hole, which is conducive to the gas to be measured to flow sequentially to the sensing diaphragm.

[0051] In a second aspect, the present application provides a semiconductor device, which includes a capacitance film vacuum gauge as in the first aspect. The capacitance film vacuum gauge fixes the substrate to the sensing diaphragm in direct contact, which reduces the setting of multiple structural parts between the substrate and the sensing diaphragm, is conducive to reducing processing tolerances, improving product quality, simplifying the structure, and reducing the difficulty of assembly and debugging. In addition, the substrate is directly fixed to the sensing diaphragm in direct contact, and the gap between the sensing diaphragm and the fixed electrode is affected by temperature only in relation to the CTE of the single structure of the groove of the substrate, which improves the detection stability and detection accuracy of the capacitance film vacuum gauge, thereby facilitating the semiconductor equipment to process high-quality semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments of the present application will be described below.

[0053] Figure 1 is a schematic diagram of a semiconductor device provided in an embodiment of the present application;

[0054] Figure 2 is a schematic diagram of the structure of a capacitance film vacuum gauge provided in an embodiment of the present application;

[0055] Figure 3 is another structural schematic diagram of a capacitance film vacuum gauge provided in an embodiment of the present application;

[0056] Figure 4 yes Figure 3 A partial enlarged view of the M1 part of the medium capacitance diaphragm vacuum gauge;

[0057] Figure 5 It is a schematic diagram of the structure of a capacitance film vacuum gauge using multiple structural members to support a substrate;

[0058] Figure 6 is another structural schematic diagram of a capacitance film vacuum gauge provided in an embodiment of the present application;

[0059] Figure 7 is another structural schematic diagram of a capacitance film vacuum gauge provided in an embodiment of the present application;

[0060] Figure 8 yes Figure 7 A partial enlarged view of the M2 part;

[0061] Fig. 9 yes Figure 5 The embodiments shown and Figure 7 A graph showing the change in the gap between the sensing diaphragm and the fixed electrode with temperature in the illustrated embodiment;

[0062] Fig.10 is another structural schematic diagram of a capacitance film vacuum gauge provided in an embodiment of the present application;

[0063] Fig.11 is another structural schematic diagram of a capacitance film vacuum gauge provided in an embodiment of the present application;

[0064] Fig.12 is another structural schematic diagram of a capacitance film vacuum gauge provided in an embodiment of the present application;

[0065] Fig.13 Schematic diagram of another structure of the capacitance film vacuum gauge provided in the embodiment of the present application.

[0066] Description of reference numerals:

[0067] 1-capacitance film vacuum gauge; 1A-semiconductor equipment;

[0068] 10-housing; 11-inner wall of the housing; 12-gap between the substrate and the inner wall of the housing;

[0069] 101- complete housing; 102- circuit board; 100- bottom plate; 110- air inlet; 120- at least one dust collecting slot; 121- one group of dust collecting slots; 122- another group of dust collecting slots; 123- primary dust collecting slot; 124- secondary dust collecting slot; 125- tertiary dust collecting slot; 130- fixed convex portion;

[0070] 120a- notch of dust collecting groove; 120b- bottom of dust collecting groove; 123a- notch of primary dust collecting groove; 123b- bottom of primary dust collecting groove; 124a- notch of secondary dust collecting groove; 124b- bottom of secondary dust collecting groove; 124c- sub-dust collecting groove; 125a- notch of tertiary dust collecting groove; 125b- bottom of tertiary dust collecting groove; 130a- step;

[0071] 20-sensing diaphragm;

[0072] 200-fixed area; 210-working area;

[0073] 30-fixed electrode; 31-one electrode; 32-another electrode;

[0074] 300-cover; 310-a capacitor; 320-another capacitor;

[0075] 40-substrate;

[0076] 400-upper shell; 410-groove; 411-bottom of the groove; 420-substrate body; 430-annular support portion; 431-one end surface; 432-the other end surface; 433-one end of the annular support portion away from the inner wall of the shell; 440-bottom surface of the substrate body facing the sensing diaphragm; 450-groove formed by the annular support portion and the bottom surface;

[0077] 50-inner cavity;

[0078] 500-lower housing; 510-reference cavity; 520-measuring cavity; 511-gap;

[0079] 60-buffer plate;

[0080] 610- flow guide hole of buffer plate;

[0081] 70- deflector;

[0082] 710- diversion hole of the diversion plate;

[0083] 81- annular elastic member; 82- supporting member;

[0084] 91 - air suction device; 92 - cavity; 93 - lead-out electrode; 94 - support ring; 95 - gasket; 96 - step portion. DETAILED DESCRIPTION

[0085] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0086] In this document, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0087] In addition, in this article, directional terms such as "upper" and "lower" are defined relative to the orientation of the structure schematically placed in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to the change of the orientation of the structure.

[0088] For ease of understanding, the English abbreviations and related technical terms involved in the embodiments of the present application are explained and described below.

[0089] CTE is the abbreviation of Coefficient of Thermal Expansion, which is the coefficient of thermal expansion.

[0090] Zero point temperature coefficient: refers to the ratio of the change of zero point with temperature change under specified time interval and indoor temperature conditions.

[0091] In order to improve the detection accuracy of the capacitance film vacuum gauge at different temperatures, the present application provides a capacitance film vacuum gauge including a housing, a sensing diaphragm, a fixed electrode and a substrate, wherein the sensing diaphragm is fixed in the housing and the inner cavity of the housing is divided into a reference cavity and a measuring cavity, wherein the measuring cavity is used to accommodate the gas flow to be measured, and the reference cavity is used to accommodate the fixed electrode and the substrate. Wherein, the housing includes a fixed convex portion, which protrudes from the inner wall of the housing toward the inner direction of the housing along the radial direction of the housing, and the fixed convex portion is used to support the substrate, and the sensing diaphragm is located between the fixed convex portion and the substrate along the axial direction of the housing. The surface of the substrate facing the sensing diaphragm includes a groove, which is concave away from the sensing diaphragm, and the bottom of the groove is used to fix the fixed electrode. The substrate is directly contacted and fixed to the sensing diaphragm, which reduces the setting of multiple structural parts between the substrate and the sensing diaphragm, is conducive to reducing the processing tolerance, improving the product quality, and also simplifies the structure, reducing the difficulty of assembly and debugging. In addition, the substrate is directly contacted and fixed on the sensing diaphragm, and the gap between the sensing diaphragm and the fixed electrode is affected by temperature only by the CTE of the single structure of the groove of the substrate, thereby improving the detection stability and detection accuracy of the capacitance film vacuum gauge.

[0092] Figure 1 It is a schematic diagram of a semiconductor device 1A provided in an embodiment of the present application.

[0093] In one embodiment, if Figure 1As shown, a semiconductor device 1A includes a capacitance film vacuum gauge 1. The capacitance film vacuum gauge 1 is used to measure the air pressure in the cavity of the semiconductor device 1A, so as to monitor the vacuum condition of the semiconductor device 1A in real time, so as to ensure the accuracy during the processing of the semiconductor device and improve the production quality of the semiconductor device. Exemplarily, the semiconductor device 1A can be a vacuum filter, a vacuum distillation, a vacuum freeze dryer, a vacuum single crystal furnace, an atmosphere vacuum furnace, a vacuum coating machine and other equipment.

[0094] Figure 2 A schematic structural diagram of a capacitance diaphragm vacuum gauge 1 provided in an embodiment of the present application.

[0095] In one embodiment, if Figure 1 and Figure 2 As shown, the capacitance film vacuum gauge 1 is directly inserted into the housing of the semiconductor device 1A and communicates with the inner cavity of the semiconductor device 1A. In another embodiment, the capacitance film vacuum gauge 1 is installed in a pipe connected to the inner cavity of the semiconductor device 1A, and the pressure in the inner cavity of the semiconductor device 1A is measured by measuring the pressure in the pipe.

[0096] The capacitance diaphragm vacuum gauge 1 provided in the embodiment of the present application will be described in detail below.

[0097] See also Figures 2 to 5 , Figure 3 Another structural schematic diagram of the capacitance film vacuum gauge 1 provided in the embodiment of the present application, Figure 4 for Figure 3 A partial enlarged view of the M1 part of the medium capacitance diaphragm vacuum gauge 1. Figure 5 FIG. 1 is a schematic diagram of a capacitance film vacuum gauge 1 that uses multiple structural members to support a substrate. In one embodiment, a capacitance film vacuum gauge 1 includes a housing 10, a sensing diaphragm 20, and a fixed electrode 30 (such as Figure 4 The sensing diaphragm 20 is fixed in the housing 10 and the inner cavity 50 of the housing 10 is divided into a reference cavity 510 and a measuring cavity 520. The measuring cavity 520 is used to accommodate the airflow to be measured, and the reference cavity 510 is used to accommodate the fixed electrode 30 and the substrate 40. The housing 10 includes a fixed protrusion 130 (as shown in FIG. Figure 4 As shown in FIG. 1 , the fixing protrusion 130 protrudes from the inner wall 11 of the housing 10 toward the inside of the housing 10 along the radial direction R of the housing 10. The fixing protrusion 130 is used to support the substrate 40. The sensing diaphragm 20 is located between the fixing protrusion 130 and the substrate 40 along the axial direction O of the housing 10. Specifically, the fixing protrusion 130 protrudes toward the inside of the housing 10 to form a step 130a. The sensing diaphragm 20 and the substrate 40 are arranged along the axial direction O of the housing 10. Figure 4The middle axis O is stacked in the step 130a in an upward direction, so that the fixing protrusion 130 can support the substrate 40. The surface of the substrate 40 facing the sensing diaphragm 20 includes a groove 410, which is recessed away from the sensing diaphragm 20, and the groove bottom 411 of the groove 410 is used to fix the fixed electrode 30.

[0098] In the embodiment of the present application, the housing 10 is used to accommodate the sensing diaphragm 20, the fixed electrode 30 and the substrate 40. When the capacitance film vacuum gauge 1 is working, the housing 10 can also isolate the influence of the airflow in the external environment on the pressure of the reference cavity 510 and the measuring cavity 520, so that the measurement result is accurate. The sensing diaphragm 20 is fixed in the housing 10 and the inner cavity 50 of the housing 10 is divided into the reference cavity 510 and the measuring cavity 520, so that the airflow in the capacitance film vacuum gauge 1 can be separated into the target pressure airflow contained in the reference cavity 510 and the two areas of the airflow to be measured contained in the measuring cavity 520. The sensing diaphragm 20 is a metal material with elastic deformation force and conductive properties. When the pressure in the airflow to be measured is different from the pressure of the airflow in the reference cavity 510, the sensing diaphragm 20 undergoes elastic deformation, and the sensing diaphragm 20 cooperates with the fixed electrode 30 to form a capacitor. The capacitance signal is converted into a current signal or a voltage signal output through the conversion circuit in the capacitance film vacuum gauge 1, and then the pressure value of the airflow to be measured is detected. Exemplarily, the sensing diaphragm 20 may be fixed in the housing 10 by bonding, welding, crimping, or the like.

[0099] In the embodiment of the present application, the housing 10 includes a fixing protrusion 130, which protrudes from the inner wall 11 of the housing 10 along the radial direction R of the housing 10, providing a possibility for fixing the substrate 40 to the fixing protrusion 130. Figure 4 As shown, the fixed protrusion 130 is used to support the substrate 40, and the sensing diaphragm 20 is located between the fixed protrusion 130 and the substrate 40 along the axial direction O of the housing 10, that is, the substrate 40 is directly fixed to the sensing diaphragm 20. In the embodiment of the present application, when the ambient temperature rises, the change of the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 is mainly affected by the groove depth of the groove 410, or the change of the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 is mainly affected by the change of the material of the part of the substrate 40 where the groove wall of the groove 410 is located with the temperature. In order to ensure the accuracy of the capacitance change, the distance between the sensing diaphragm 20 and the fixed electrode 30 is generally small, so the length of the part of the substrate 40 where the groove wall of the groove 410 is located along the axial direction O of the housing is also small, so that when the ambient temperature rises, the distance between the sensing diaphragm 20 and the fixed electrode 30 changes very little, thereby improving the temperature stability of the capacitance film vacuum gauge 1 and reducing the accuracy loss caused by temperature.

[0100] like Figure 5As shown, if the capacitance film vacuum gauge 1 fixes the substrate 40 to the sensing diaphragm 20 through multiple structural parts such as a support ring 94, a gasket 95, a step portion 96 or a roller bearing, there are multiple structural parts such as a support ring 94, a gasket 95, a step portion 96 or a roller bearing between the sensing diaphragm 20 and the substrate 40. Among them, multiple structural parts such as the support ring 94, the gasket 95, the step portion 96 or the roller bearing increase the processing tolerance, making the consistency of the product worse. Furthermore, when the ambient temperature rises, the expansion of the supporting ring 94, gasket 95, step 96 or roller bearing and other structural parts away from the sensing diaphragm 20 is relatively large. Although the part of the substrate 40 fixed with the fixed electrode 30 will expand toward the sensing diaphragm 20, the supporting ring 94, gasket 95, step 96 or roller bearing and other structural parts have a relatively large overall length in the axial direction O of the shell and the thermal expansion coefficient is generally twice that of the substrate 40, so that the gap 511 between the substrate 40 and the sensing diaphragm 20 changes greatly, thereby making the detection accuracy of the capacitance film vacuum gauge 1 worse when the temperature rises, and the detection accuracy will also deteriorate in an extremely cold environment. Therefore, compared with Figure 5 The method shown in the embodiment of the present application Figure 4 The capacitive film vacuum gauge 1 shown fixes the substrate 40 directly to the sensing diaphragm 20, which can reduce the influence of the processing tolerances of multiple structural parts on the gap 511 between the fixed electrode 30 and the sensing diaphragm 20, improve product consistency, improve product quality, and can also reduce the number of parts used, simplify the structure, reduce the difficulty of assembly and debugging, and improve the temperature stability of the capacitive film vacuum gauge 1, and reduce the accuracy loss caused by temperature.

[0101] In the embodiment of the present application, the fixed electrode 30 is conductive, and the structural material of the substrate 40 is an insulating material. The substrate 40 is insulated to reduce the crosstalk between the multiple detection electrodes at the bottom, thereby ensuring the detection accuracy of the capacitance film vacuum gauge 1. The surface of the substrate 40 facing the sensing diaphragm 20 includes a groove 410, which provides space for the fixed electrode 30 to be installed and fixed on the substrate 40. The groove 410 is recessed away from the sensing diaphragm 20, which is conducive to having sufficient installation space when the fixed electrode 30 is fixed to the groove 410. It can also allow a gap 511 between the fixed electrode 30 and the sensing diaphragm 20, further allowing the sensing diaphragm 20 to have sufficient deformation space, which is conducive to the normal operation of the capacitance film vacuum gauge 1. In the embodiment of the present application, the groove bottom 411 of the groove 410 is a plane, which can be used to accommodate the fixed electrode 30, and the groove wall of the groove 410 is a curved side wall extending smoothly from the groove bottom 411 of the groove 410 to the surface of the substrate 40 facing the sensing diaphragm 20.

[0102] In the embodiment of the present application, the fixing protrusion 130 is used to support the substrate 40, and the substrate 40 is directly overlapped on the fixing protrusion 130 without using Figure 5The supporting ring 94, gasket 95, step portion 96 or roller bearing and other structural parts shown in the figure reduce the length of the fixed protrusion 130 along the radial direction R of the shell, thereby exposing a larger surface of the substrate 40 to face the sensing diaphragm 20, that is, the actual working surface becomes larger, so that the lower surface of the substrate 40 can fix more fixed electrodes 30 or the distribution position of the fixed electrodes 30 has more space, thereby improving the detection accuracy of the capacitance film vacuum gauge 1. Figure 5 As shown, in order to fix the support ring 94 and the gasket 95, the step portion 96 also needs to form a support groove on the surface of the step portion 96. The support groove is used to accommodate the support ring 94. In order to process the support groove, a larger area needs to be reserved for the step portion 96, so that the length of the step portion 96 along the radial direction R of the shell becomes longer, thereby making the actual working surface of the substrate 40 relative to the sensing diaphragm 20 smaller, and the detection accuracy of the capacitance film vacuum gauge 1 is reduced. However, in the present application, there is no need to reserve processing space for the fixed protrusion 130, so that the fixed protrusion 130 only needs to be able to support the substrate 40, thereby making the fixed protrusion 130 smaller, increasing the actual working surface of the substrate 40, so the embodiment of the present application is compared with Figure 5 It has higher detection accuracy.

[0103] Figure 6 It is another structural schematic diagram of the capacitance diaphragm vacuum gauge 1 provided in an embodiment of the present application.

[0104] In one embodiment, if Figure 2 and Figure 6 As shown, the capacitance film vacuum gauge 1 further includes an annular elastic member 81, which is used to fasten the fixing protrusion 130 and the substrate 40. The housing 10 further includes a cover plate 300. The cover plate 300 and the annular elastic member 81 are arranged opposite to each other along the housing axial direction O. One end of the annular elastic member 81 is fixed to the cover plate 300 along the housing axial direction O, and the other end of the annular elastic member 81 is fixed to the substrate 40. The free length of the annular elastic member 81 is greater than the distance between the cover plate 300 and the substrate 40.

[0105] In the embodiment of the present application, the free length of the annular elastic member 81 is greater than the distance between the cover plate 300 and the substrate 40. One end of the annular elastic member 81 is fixed to the cover plate 300 along the axial direction O of the shell, and the other end of the annular elastic member 81 is fixed to the substrate 40, so that the annular elastic member 81 has a downward elastic force on the substrate 40 along the axial direction O of the shell, so that a tightening is formed between the substrate 40 and the fixed protrusion 130, so that the sensing diaphragm 20 is more stably fixed between the substrate 40 and the fixed protrusion 130.

[0106] In the embodiment of the present application, the annular elastic member 81 may be a corrugated spring. The contact point of the corrugated spring is small and it is not easy to deform the substrate 40.

[0107] In another embodiment, the capacitance diaphragm vacuum gauge 1 further includes a support member 82 , which is used to fix the annular elastic member 81 , and is sandwiched between the other end of the annular elastic member 81 and the substrate 40 along the axial direction O of the housing 10 .

[0108] In the embodiment of the present application, when the stroke height of the annular elastic member 81 cannot meet the distance requirement between the cover plate 300 and the base plate 40, a support member 82 can be added at the other end of the annular elastic member 81, and the support member 82 can provide an axial length for the annular elastic member 81, so that the stroke height of the annular elastic member 81 meets the distance requirement between the cover plate 300 and the base plate 40. In one embodiment, the annular elastic member 81 is annular, and the support member 82 used to support the annular elastic member 81 is also annular.

[0109] See also Figure 3 In one embodiment, a suction device 91 is provided on the housing 10 , and the suction device 91 includes a cavity 92 connected to the reference cavity 510 , and a suction agent is provided in the cavity 92 .

[0110] In the embodiment of the present application, the capacitance film vacuum gauge 1 performs a vacuum operation on the reference cavity 510 before leaving the factory, but as the use time increases, the vacuum degree in the reference cavity 510 will decrease, thereby affecting the detection accuracy of the capacitance film vacuum gauge 1. The getter can absorb the excess gas in the reference cavity 510, thereby ensuring the accuracy of the detection, which is conducive to the processing of accurate semiconductor structure devices.

[0111] See also Figure 3 In one embodiment, the capacitance film vacuum gauge 1 further comprises a whole machine housing 101, the whole machine housing 101 is used to accommodate the housing 10, the sensing diaphragm 20, the fixed electrode 30 (such as Figure 4 As shown), substrate 40 and peripheral detection circuits.

[0112] See also Figure 3 and Figure 4 In one embodiment, the capacitance film vacuum gauge 1 further includes an extraction electrode 93, one end of which is connected to the fixed electrode 30, and the other end of which is connected to the peripheral detection circuit in the whole machine housing 101, for detecting the change of the capacitance formed by the sensing diaphragm 20 and the fixed electrode 30.

[0113] See also Figure 3 In one embodiment, the capacitance film vacuum gauge 1 further includes a circuit board 102, which is connected to the other end of the lead-out electrode 93 and is used to detect changes in the capacitance formed by the sensing diaphragm 20 and the fixed electrode 30, wherein the circuit board 102 is used to integrate a peripheral detection circuit.

[0114] See also Figure 4 , Figure 7 and Figure 8 , Figure 7 is another structural schematic diagram of the capacitance film vacuum gauge 1 provided by the embodiment of the present application, Figure 8 is Figure 7 a partial enlarged view of the M2 part in [reference]. In one embodiment, the sensing diaphragm 20 includes a fixed area 200 and a working area 210. The fixed area 200 surrounds the outer periphery of the working area 210. The fixed area 200 is used to fix the housing 10. There is a gap 511 between the working area 210 and the fixed electrode 30. Along the axial direction O of the housing 10, the distance between the surface of the fixed area 200 facing the substrate 40 and the substrate 40 is smaller than the distance between the working area 210 and the fixed electrode 30.

[0115] In the embodiment of the present application, the fixed area 200 of the sensing diaphragm 20 is used to fix the sensing diaphragm 20 to the housing 10, so that the sensing diaphragm 20 can divide the inner cavity 50 of the housing 10 into a measurement cavity 520 and a reference cavity 510. The fixed area 200 surrounds the outer periphery of the working area 210, which is beneficial to firmly fixing the sensing diaphragm 20 to the housing 10, and is also beneficial to dispersing the stress on the edge when the sensing diaphragm 20 deforms, and prolonging the service life of the sensing diaphragm 20.

[0116] In the embodiment of the present application, there is a gap 511 between the working area 210 and the fixed electrode 30, and the gap 511 provides a deformation space for the sensing diaphragm 20. The distance between the surface of the fixed area 200 facing the substrate 40 and the substrate 40 along the axial direction O of the housing 10 is denoted as L1, and the distance between the working area 210 and the fixed electrode 30 is denoted as L2. A part of the fixed area 200 is fixed to the fixed convex part 130 of the housing 10. A smaller L1 is beneficial to reducing the zero drift caused by the difference in the thermal expansion coefficient between the fixed convex part 130 and the substrate 40. A larger L2 is beneficial to providing enough space for the sensing diaphragm 20 to deform. L1 < L2 is beneficial to forming a groove 410 on the surface of the substrate 40 facing the sensing diaphragm 20.

[0117] Please refer to Figure 4 and Figure 7 , in one embodiment, the fixed electrode 30 includes two electrodes 31, 32. The two electrodes 31, 32 and the sensing diaphragm 20 form two capacitors 310, 320. The two capacitors 310, 320 are used to detect the deformation amount of the sensing diaphragm 20. One of the electrodes 31 is fixed at the central position of the substrate 40, and the other electrode 32 is fixed at the outer peripheral position of the substrate 40. Among them, along the radial direction R of the housing 10, one electrode 31, the other electrode 32, and the fixed area 200 are arranged at intervals in sequence.

[0118] In the embodiment of the present application, an electrode 31 is fixed at the center position of the substrate 40 and the center position of the working area 210 of the sensing diaphragm 20 to form a capacitor 310, which is mainly used to detect the capacitance change caused by the elastic deformation of the sensing diaphragm 20 due to the pressure difference, while the other electrode 32 is fixed at the outer peripheral position of the substrate 40 and the edge of the working area 210 of the sensing diaphragm 20 to form another capacitor 320. The edge deformation of the working area 210 of the sensing diaphragm 20 is less affected by the pressure of the airflow to be measured, so the other capacitor 320 is mainly used to detect the capacitance change caused by the elastic deformation of the sensing diaphragm 20 due to temperature change. The two capacitors 310 and 320 form differential detection, which is conducive to offsetting the capacitance change caused by the temperature increase, affecting the detection value, and is conducive to reducing the error of the detection result, thereby ensuring the normal operation of the capacitance film vacuum gauge 1.

[0119] In the embodiment of the present application, along the radial direction R of the shell 10, one electrode 31, another electrode 32, and the fixed area 200 of the sensing diaphragm 20 are arranged in sequence, which is conducive to the two capacitors 310 and 320 formed by the two electrodes 31 and 32 and the sensing diaphragm 20 being arranged in a differential structure in the shell 10, which is conducive to reducing the detection error and improving the detection accuracy.

[0120] See also Figure 4 and Figure 7 In one embodiment, a gap 12 is provided between the substrate 40 and the inner wall 11 of the housing 10, so that the fixed electrode 30 arranged on the surface of the substrate 40 facing the sensing diaphragm 20 has a larger installation area, which is conducive to arranging the other electrode 32 along the axial direction O of the housing 10 as much as possible relative to the edge of the working area 210 of the sensing diaphragm 20, thereby enhancing the differential effect of the two capacitors 310 and 320 and improving the detection sensitivity of the capacitance film vacuum gauge 1.

[0121] See also Figure 5 and Figure 7 In one embodiment, the surface of the fixing area 200 facing the substrate 40 along the axial direction O of the housing 10 contacts the substrate 40 and the fixing protrusion 130 .

[0122] In the embodiment of the present application, the surface of the fixed area 200 facing the substrate 40 along the axial direction O of the shell 10 is in contact with the substrate 40, that is, the distance between the surface of the fixed area 200 facing the substrate 40 along the axial direction O of the shell 10 and the substrate 40 is zero, and the substrate 40 is directly fixed to the fixed area 200 of the sensing diaphragm 20, which is beneficial to reduce the influence of the gap 511 between the working area 210 and the fixed electrode 30 on the expansion deformation of the substrate 40 and the fixed protrusion 130 caused by the temperature increase.

[0123] In the embodiment of the present application, the substrate 40 is directly fixed to the fixed area 200 of the sensing diaphragm 20, and a gap 511 is provided between the working area 210 and the fixed electrode 30. The width of the gap 511 along the axial direction O of the housing 10 can be controlled only by controlling the depth of the groove 410. In addition, the width of the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 of the capacitance film vacuum gauge 1 varies with temperature only by the CTE of the groove wall material of the groove 410. Compared with the width of the gap 511 between the sensing diaphragm 20 and the substrate 40 determined by the support ring 94, the gasket 95, the step portion 96 (such as Figure 5 The CTE of multiple structural parts (as shown in the figure) can effectively reduce the zero point temperature coefficient.

[0124] See also Figure 4 and Figure 7 In one embodiment, the distance between the fixed electrode 30 and the inner wall 11 of the shell 10 along the radial direction R of the shell 10 is greater than the length of the fixed protrusion 130 .

[0125] In the embodiment of the present application, along the radial direction R of the housing 10, the length of the fixed protrusion 130 is recorded as L3, and the distance between the fixed electrode 30 and the inner wall 11 of the housing 10 is recorded as L4, L4 ≥ L3, which can ensure that the fixed electrode 30 and the working area 210 of the sensing diaphragm 20 are arranged relative to each other along the axial direction O of the housing 10, thereby ensuring the normal operation of the capacitance film vacuum gauge 1. If L4 < L3, a part of the fixed electrode 30 will correspond to the fixed area 200 of the sensing diaphragm 20, then during the operation of the capacitance film vacuum gauge 1, since the fixed area 200 of the sensing diaphragm 20 is fixed, the change in the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 is larger than the actual situation, which affects the detection result and is not conducive to the normal operation of the capacitance film vacuum gauge 1.

[0126] See also Figure 4 and Figure 7 In one embodiment, the groove 410 is integrally formed on the surface of the substrate 40 facing the sensing diaphragm 20 .

[0127] In the embodiment of the present application, the gap 511 between the working area 210 of the sensing diaphragm 20 and the fixed electrode 30 is controlled by the depth of the groove 410 along the axial direction O of the housing 10. The groove 410 is integrally formed on the surface of the substrate 40 facing the sensing diaphragm 20, which is conducive to reducing the influence of the gap 511 between the working area 210 of the sensing diaphragm 20 and the fixed electrode 30 caused by the difference in CTE of the materials when the substrate 40 and the sensing diaphragm 20 are in fixed contact, improving the temperature coefficient performance of the capacitance film vacuum gauge 1, and also helping to simplify the assembly structure, reduce the difficulty of assembly, and improve product consistency. Exemplarily, the groove bottom and the groove wall of the groove 410 are the same as the integrally formed material of the substrate 40, both of which are ceramic materials.

[0128] See also Figure 5 , Figure 7 and Fig. 9 , Fig. 9 for Figure 5 The embodiments shown and Figure 7 The curve diagram of the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 in the embodiment shown in FIG. 5 changes with temperature, wherein Fig. 9 Curve A in the figure represents Figure 5 In the embodiment shown, a curve diagram of the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 changing with temperature is shown. Fig. 9 The B curve in the figure represents Figure 7 The curve diagram of the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 in the embodiment shown in FIG. Figure 5 As shown, the support ring 94, the gasket 95, and the step portion 96 are made of metal materials, and the substrate 40 is made of ceramic materials. The CTE coefficient difference between the metal material and the ceramic material is about 4 to 6 ppm / °C, which is a large difference. Figure 7 As shown, the substrate 40 and the groove 410 are both made of ceramic materials, and there is no CTE difference between the substrate 40 and the groove 410 . The fixing protrusion 130 is a part of the housing 10 , and the fixing protrusion 130 is made of metal material. Figure 7 The width variation of the gap 511 between the fixed electrode 30 and the sensing diaphragm 20 (eg Fig. 9 The curve B in the middle is mainly affected by the single structural member of the groove 410. Figure 5 The width variation of the gap 511 between the fixed electrode 30 and the sensing diaphragm 20 (eg Fig. 9 The curve A in the middle is mainly affected by the multiple structural members formed by the support ring 94, the gasket 95, and the step portion 96. In one embodiment, Figure 7 Example compared to Figure 5 In the embodiment described above, the variation of the gap 511 can be reduced by 100 times, which is beneficial to improving the detection accuracy of the capacitance diaphragm vacuum gauge 1 .

[0129] In one embodiment, the housing 10 is made of metal material, and the substrate 40 is made of ceramic material.

[0130] In the embodiment of the present application, the groove 410 is located on the surface of the substrate 40 facing the sensing diaphragm 20, the fixed electrode 30 is located at the groove bottom 411 of the groove 410, the sensing diaphragm 20 is located between the fixed protrusion 130 and the substrate 40, the substrate 40 and the groove 410 are both made of ceramic materials, the CTE of the substrate 40 and the groove 410 are the same, the fixed protrusion 130 is a part of the housing 10, and the fixed protrusion 130 is a metal material, so that the width change of the gap 511 between the fixed electrode 30 and the sensing diaphragm 20 is mainly affected by the single structural component of the groove 410, which is beneficial to improve the detection accuracy of the capacitance film vacuum gauge 1.

[0131] See also Fig.10 , Fig.10 Another structural schematic diagram of the capacitance diaphragm vacuum gauge 1 provided in an embodiment of the present application, in one embodiment, the substrate 40 includes a substrate body 420 and an annular support portion 430, the substrate body 420 includes a bottom surface 440 facing the sensing diaphragm 20, the bottom surface 440 is a plane, the bottom surface 440 is used to fix the annular support portion 430 and the fixed electrode 30, the annular support portion 430 and the bottom surface 440 form a groove 450.

[0132] In the embodiment of the present application, the groove wall of the groove 450 is formed by the annular support portion 430, and the annular support portion 430 and the substrate body 420 can be a separate structure, which is conducive to reducing the difficulty of processing the groove 450 and making the shape design of the groove 450 more flexible. Fig.10 Only a portion of the annular support portion 430 is shown in the figure. In an actual product, the annular support portion 430 is annular.

[0133] In one embodiment, the substrate body 420 and the annular support portion 430 have different structural materials. For example, the substrate body 420 is a ceramic material, and the annular support portion 430 is a metal material. The substrate body 420 includes a bottom surface 440 facing the sensing diaphragm 20, which is conducive to the installation and fixation of the fixed electrode 30. The bottom surface 440 is a plane, which is conducive to the horizontal arrangement of the fixed electrode 30 and is also conducive to simplifying the processing technology of the substrate body 420.

[0134] In the embodiment of the present application, the bottom surface 440 is used to fix the annular support portion 430 and the fixed electrode 30. The substrate body 420 is fixed to the fixed area 200 of the sensing diaphragm 20 through the annular support portion 430. Along the axial direction O of the housing 10, the fixed protrusion 130, the fixed area 200 of the sensing diaphragm 20, the annular support portion 430, and the substrate body 420 are stacked in sequence. The gap 511 between the working area 210 of the sensing diaphragm 20 and the fixed electrode 30 can be adjusted by controlling the thickness of the annular support portion 430 along the axial direction O. The zero drift of the gap 511 between the working area 210 of the sensing diaphragm 20 and the fixed electrode 30 caused by temperature is mainly affected by the CTE difference between the materials of the annular support portion 430 and the substrate body 420, which is conducive to reducing the change of the gap 511 caused by temperature, reducing the zero temperature coefficient, and improving the detection accuracy of the capacitance film vacuum gauge 1.

[0135] In the embodiment of the present application, the annular support portion 430 and the bottom surface 440 form a groove 450, which is conducive to generating a gap 511 between the working area 210 of the sensing diaphragm 20 and the fixed electrode 30 fixed to the bottom surface 440 of the substrate body 420, providing sufficient deformation space for the working area 210 of the sensing diaphragm 20.

[0136] See also Figure 5 and Fig.10 In one embodiment, if Figure 5 As shown, the support ring 94, the gasket 95, and the step portion 96 are made of metal materials, and the substrate 40 is made of ceramic material. The CTE coefficient difference between the ceramic and metal structural parts is about 4 to 6 ppm / °C, which is a large difference. Fig.10 As shown, the substrate body 420 is made of ceramic material, and the annular support portion 430 is made of metal material, and the CTE difference is relatively large. Figure 5 and Fig.10 The materials of the embodiments all have CTE differences, but the length of the multiple structural parts formed by the support ring 94, the gasket 95, and the step portion 96 along the axial direction O is relatively large and the thermal expansion coefficient is generally twice as high as that of the substrate 40, while the length of the annular support portion 430 along the axial direction O is very small. Even if the material of the annular support portion 430 is a metal material, the width change of the gap 511 between the fixed electrode 30 and the sensing diaphragm 20 is relatively small when the temperature changes.

[0137] In the embodiment of the present application, the annular support portion 430 made of metal material has a stronger support strength, is easy to process, and also facilitates the processing of the substrate body 420. In addition, in order to ensure the accuracy of capacitance change, the width of the gap 511 between the sensing diaphragm 20 and the fixed electrode 30 is generally small. The ductility and toughness of metal materials are strong. The use of metal materials can be used to process a thinner annular support portion 430, and a groove 450 with a smaller depth can be formed along the axial direction O, thereby obtaining a smaller gap 511 between the sensing diaphragm 20 and the fixed electrode 30, so that when the ambient temperature rises, the distance between the sensing diaphragm 20 and the fixed electrode 30 changes very little, thereby improving the temperature stability of the capacitance film vacuum gauge 1 and reducing the accuracy loss caused by temperature.

[0138] In the embodiments of the present application, Figure 5 The width variation of the gap 511 between the fixed electrode 30 and the sensing diaphragm 20 is mainly affected by the support ring 94, the gasket 95, and the step portion 96. Fig.10 The width variation of the gap 511 between the fixed electrode 30 and the sensing diaphragm 20 is mainly affected by the single structure of the annular support part 430. In one embodiment, Fig.10 Example compared to Figure 5 In the embodiment described, the variation of the gap 511 can be reduced by 50 times, which is beneficial to improving the detection accuracy of the capacitance diaphragm vacuum gauge 1 .

[0139] See also Fig.10 , Fig.11 and Fig.12 , Fig.11 Another structural schematic diagram of the capacitance film vacuum gauge 1 provided in the embodiment of the present application, Fig.12Another structural schematic diagram of the capacitance diaphragm vacuum gauge 1 provided in an embodiment of the present application. In one embodiment, the annular support portion 430 includes two end surfaces 431 and 432 opposite to each other along the axial direction O of the housing 10, and the area of ​​one end surface 431 of the annular support portion 430 close to the substrate body 420 is greater than or equal to the area of ​​the other end surface 432.

[0140] In the embodiment of the present application, the annular support portion 430 has two end faces 431 and 432 that are opposite to each other along the axial direction O of the housing 10, wherein one end face 431 contacts the substrate body 420, and the other end face 432 contacts the fixing area 200 of the sensing diaphragm 20, so that the substrate body 420 is indirectly fixed to the fixing area 200 of the sensing diaphragm 20. The area of ​​one end face 431 of the annular support portion 430 close to the substrate body 420 is greater than or equal to the area of ​​the other end face 432, and the area of ​​one end face 431 of the annular support portion 430 close to the substrate body 420 is larger, which is beneficial for the annular support portion 430 to be closer to the substrate body 420 when the sensing diaphragm 20 is deformed upward along the axial direction O of the housing 10, and is beneficial for improving the structural integrity of the substrate body 420 and the annular support portion 430 in the substrate 40.

[0141] In the embodiment of the present application, when the capacitance film vacuum gauge 1 is just produced, the gas in the external environment will enter the measuring chamber 520 (such as Figure 3 As shown in the figure, the sensing diaphragm 20 is deformed. If the annular support portion 430 contacts the working area 210 of the sensing diaphragm 20 too much, the portion where the sensing diaphragm 20 and the annular support portion 430 abut against each other will easily generate a force on the sensing diaphragm 20, causing loss to the sensing diaphragm 20 and shortening the service life of the sensing diaphragm 20.

[0142] See also Fig.10 and Fig.12 In one embodiment, the length of the end 433 of the annular support portion 430 away from the inner wall 11 of the shell 10 along the axial direction O of the shell 10 gradually increases from the side away from the inner wall 11 of the shell 10 to the side close to the inner wall 11 of the shell 10.

[0143] In the embodiment of the present application, when the capacitance film vacuum gauge 1 is just produced, the gas in the external environment will enter the measuring chamber 520 (such as Figure 3 As shown in the figure, the sensing diaphragm 20 is deformed, and the length of one end 433 of the annular support portion 430 away from the inner wall 11 of the shell 10 along the axial direction O of the shell 10 gradually increases from the side away from the inner wall 11 of the shell 10 to the side close to the inner wall 11 of the shell 10, so that the sensing diaphragm 20 exerts an upward force on the annular support portion 430, which is conducive to the annular support portion 430 being more tightly fixed to the substrate body 420.

[0144] Exemplarily, the length of the end 433 of the annular support portion 430 away from the inner wall 11 of the shell 10 along the axial direction O of the shell 10 gradually increases from the side away from the inner wall 11 of the shell 10 to the side close to the inner wall 11 of the shell 10, which is manifested as the cross-sectional shape of the annular support portion 430 along the radial direction R of the shell 10 is a single-sided trapezoid (such as Fig.10 As shown), bilateral trapezoid (as Fig.12 shown).

[0145] See also Figure 3 and Fig.13 , Fig.13 Another structural schematic diagram of the capacitance film vacuum gauge 1 provided in the embodiment of the present application, in one embodiment, the housing 10 further includes a bottom plate 100, the bottom plate 100 is located on the side of the sensing diaphragm 20 away from the substrate 40, the bottom plate 100 and the sensing diaphragm 20 together form a measuring cavity 520, the bottom plate 100 includes an air inlet 110, and the air inlet 110 is used to input the airflow to be measured into the measuring cavity 520. Among them, the surface of the bottom plate 100 facing the sensing diaphragm 20 includes at least one dust collecting groove 120, at least one dust collecting groove 120 surrounds the outer periphery of the air inlet 110 along the radial direction R of the housing 10, the notch 120a of each dust collecting groove 120 faces the sensing diaphragm 20, and each dust collecting groove 120 is used to collect solid impurities in the airflow to be measured.

[0146] In the embodiment of the present application, the bottom plate 100 is located on the side of the sensing diaphragm 20 away from the substrate 40, which is conducive to the bottom plate 100 and the sensing diaphragm 20 enclosing a measuring cavity 520, and the measuring cavity 520 is used to accommodate the airflow to be measured. The difference between the pressure in the airflow to be measured and the pressure in the reference cavity 510 can cause the working area 210 of the sensing diaphragm 20 to undergo elastic deformation. The bottom plate 100 includes an air inlet 110, and the air inlet 110 is used to input the airflow to be measured into the measuring cavity 520, so that the sensing diaphragm 20 can contact the airflow to be measured, so that the vacuum degree of the airflow to be measured can be measured through the deformation of the sensing diaphragm 20, which is conducive to real-time grasp of the vacuum degree, ensuring the fine processing of semiconductor structural parts, and improving the product quality of semiconductor structural parts.

[0147] In the embodiment of the present application, the surface of the bottom plate 100 facing the sensing diaphragm 20 includes at least one dust collecting groove 120, and the at least one dust collecting groove 120 is arranged on the surface of the bottom plate 100 facing the sensing diaphragm 20, which is conducive to the at least one dust collecting groove 120 contacting with the airflow to be measured and collecting solid impurities in the airflow to be measured. At least one dust collecting groove 120 surrounds the outer periphery of the air inlet 110 along the radial direction R of the shell 10, which is conducive to the airflow to be measured entering the measuring cavity 520. The airflow to be measured can pass through at least one dust collecting groove 120 in any direction along the radial direction R of the shell 10, so that at least one dust collecting groove 120 collects solid impurities in the airflow to be measured, thereby reducing the contamination of the sensing diaphragm 20 by the solid impurities in the gas to be measured, extending the service life of the sensing diaphragm 20, and improving the detection accuracy of the capacitance film vacuum gauge 1. The capacitance film vacuum gauge 1 is used to detect the vacuum degree of the chamber environment in the semiconductor device processing device, and to feedback the vacuum degree of the chamber in real time, so as to control and ensure that the semiconductor device processing is in a vacuum environment, thereby facilitating the smooth fine processing of semiconductor structural parts.

[0148] In the embodiment of the present application, the notch 120a of each dust collecting groove 120 faces the sensing diaphragm 20, which is conducive to the solid impurities in the airflow to be measured falling into the dust collecting groove 120 from the notch 120a of each dust collecting groove 120, thereby collecting the solid impurities in the airflow to be measured.

[0149] See also Figure 3 and Fig.13 In one embodiment, the inner wall of the bottom plate 100 protrudes toward the inner cavity 50 of the shell 10 to form a fixing protrusion 130 .

[0150] In the embodiment of the present application, the fixing area 200 of the sensing diaphragm 20 is fixed to the fixing protrusion 130, that is, the sensing diaphragm 20 is fixed to the bottom plate 100, so that the sensing diaphragm 20 is fixed in the shell 10, which is beneficial for the sensing diaphragm 20 to separate the inner cavity 50 of the shell 10 into a measuring cavity 520 and a reference cavity 510, so that the capacitance diaphragm vacuum gauge 1 can work normally.

[0151] In one embodiment, if Figure 3 As shown, the shell 10 can be divided into a cover plate 300, an upper shell 400 and a lower shell 500, wherein the sensing diaphragm 20 is fixed between the upper shell 400 and the lower shell 500, the lower shell 500 includes a bottom plate 100, and the fixing protrusion 130 is located at the edge of the lower shell 500 and at the inner wall of the lower shell 500. Along the axial direction O of the shell 10, the lower shell 500, the upper shell 400 and the cover plate 300 are stacked in sequence, and the cover plate 300 and the upper shell 400 enclose a reference cavity 510.

[0152] See also Figure 3 and Fig.13In one embodiment, at least one dust collecting groove 120 includes two groups of dust collecting grooves 121 and 122, and each group of dust collecting grooves 121 and 122 includes at least one dust collecting groove 120. In particular, along the radial direction R of the housing 10, the air inlet 110, one group of dust collecting grooves 121, and another group of dust collecting grooves 122 are arranged in sequence, and the distance between the groove bottom 120b of each dust collecting groove 120 in one group of dust collecting grooves 121 and the sensing diaphragm 20 is greater than the distance between the groove bottom 120b of each dust collecting groove 120 in the other group of dust collecting grooves 122 and the sensing diaphragm 20.

[0153] In the embodiment of the present application, at least one dust collecting groove 120 includes two groups of dust collecting grooves 121 and 122. The two groups of dust collecting grooves 121 and 122 form a two-level impurity removal. The design of the two groups of dust collecting grooves 121 and 122 is conducive to more adsorption of solid impurities in the airflow to be measured. Each group of dust collecting grooves 121 and 122 includes at least one dust collecting groove 120, which is conducive to more solid impurities in the airflow to be measured being collected in the dust collecting groove 120.

[0154] In the embodiment of the present application, along the radial direction R of the shell 10, the air inlet 110, a group of dust collecting grooves 121, and another group of dust collecting grooves 122 are arranged in sequence, which is beneficial for the measured airflow to enter the measuring cavity 520 from the air inlet 110, collect the solid impurities in the measured airflow through a group of dust collecting grooves 121, and then collect the solid impurities in the measured airflow through another group of dust collecting grooves 122. This is beneficial to further improve the cleanliness of the measured airflow, reduce the amount of solid impurities attached to the sensing diaphragm 20, and ensure that under harsh working conditions, the solid impurities have sufficient space to attach and accumulate, which is beneficial to ensuring the normal operation of the capacitive diaphragm vacuum gauge 1, and is also beneficial to improving the detection accuracy and detection stability of the capacitive diaphragm vacuum gauge 1 and prolonging its service life.

[0155] In the embodiment of the present application, the distance between the bottom 120b of each dust collecting groove 120 in one group of dust collecting grooves 121 and the sensing diaphragm 20 is recorded as L5, and the distance between the bottom 120b of each dust collecting groove 120 in another group of dust collecting grooves 122 and the sensing diaphragm 20 is recorded as L6, L5>L6, which is conducive to the air flow to be measured entering from the air inlet 110, and can flow through each dust collecting groove 120 of one group of dust collecting grooves 121 and each dust collecting groove 120 of the other group of dust collecting grooves 122 along the axial direction O of the shell 10 in sequence, so that the gas to be measured can flow smoothly in the measuring chamber 520 along the overall direction of the axial direction O of the shell 10.

[0156] See also Figure 3 and Fig.13In one embodiment, the capacitance film vacuum gauge 1 further includes a buffer plate 60 and a guide plate 70, which are fixed to the bottom plate 100. The buffer plate 60 is used to buffer the impact force of the measured airflow on the sensing diaphragm 20, and the guide plate 70 is used to increase the path length of the measured airflow flowing in the measuring chamber 520. Along the axial direction O of the housing 10, the air inlet 110, the buffer plate 60, the guide plate 70, and the sensing diaphragm 20 are arranged in sequence. The buffer plate 60 and the guide plate 70 include at least one guide hole 600, and each guide hole 600 is opposite to the notch 120a of at least one dust collecting groove 120 along the axial direction O of the housing 10.

[0157] In the embodiment of the present application, the buffer plate 60 and the guide plate 70 are fixed to the bottom plate 100, and the measuring cavity 520 accommodates the buffer plate 60 and the guide plate 70, so that the airflow to be measured flows through the buffer plate 60 and the guide plate 70. The buffer plate 60 is used to buffer the impact force of the airflow to be measured on the sensing diaphragm 20, protect the elastic deformation capacity of the sensing diaphragm 20, and is also conducive to reducing the solid impurities attached to the sensing diaphragm 20 directly impacted by the airflow to be measured, which is conducive to extending the service life of the sensing diaphragm 20. The guide plate 70 is used to increase the path length of the airflow to be measured flowing in the measuring cavity 520. When the airflow to be measured flows through the guide plate 70, the guide plate 70 can adhere to part of the impurity particles in the airflow to be measured, thereby reducing the number of impurity particles attached when the airflow to be measured contacts the sensing diaphragm 20.

[0158] In the embodiment of the present application, along the axial direction O of the shell 10, the air inlet 110, the buffer plate 60, the guide plate 70, and the sensing diaphragm 20 are arranged in sequence, and the airflow to be measured flows from the air inlet 110 through the buffer plate 60, the guide plate 70, and the sensing diaphragm 20 in sequence, which not only weakens the impact of the airflow to be measured on the sensing diaphragm 20, but also reduces the adhesion of fixed impurities in the airflow to be measured to the sensing diaphragm 20, which is beneficial to prolonging the service life of the sensing diaphragm 20, and is also beneficial to improving the detection stability of the capacitive film vacuum gauge 1 and reducing drift.

[0159] In the embodiment of the present application, the buffer plate 60 and the guide plate 70 include at least one guide hole 600, so that the airflow to be measured entering the measuring cavity 520 from the air inlet 110 can pass through the buffer plate 60 and the guide plate 70 from the at least one guide hole 600 to reach the sensing diaphragm 20. Along the axial direction O of the housing 10, each guide hole 600 is opposite to the notch 120a of at least one dust collecting groove 120, so that after the airflow to be measured enters from the air inlet 110, it can flow out from the guide hole 610 of the buffer plate 60 to the guide plate 70 after being fully contacted with a group of dust collecting grooves 121. The guide plate 70 guides the gas to be measured to flow into another group of dust collecting grooves 122. The airflow to be measured generates turbulence in the other group of dust collecting grooves 122 and fully contacts the groove wall. Then, it can flow out from the guide hole 710 of the guide plate 70 to the sensing diaphragm 20, so that more solid impurities in the airflow to be measured are adsorbed and settled, reducing the pollution to the sensing diaphragm 20. The buffer plate 60 and the guide plate 70 include at least one guide hole 600 , which facilitates the gas to be measured to flow sequentially to the sensing diaphragm 20 .

[0160] See also Fig.13 In one embodiment, along the radial direction R of the shell 10, the groove width of each dust collecting groove 120 in one group of dust collecting grooves 121 is greater than the groove width of each dust collecting groove 120 in another group of dust collecting grooves 122.

[0161] In the embodiment of the present application, along the radial direction R of the shell 10, the width of each dust collecting groove 120 in a group of dust collecting grooves 121 is recorded as L7, and the width of each dust collecting groove 120 in another group of dust collecting grooves 122 is recorded as L8, L7>L8, when the measured airflow enters the measuring cavity 520 from the air inlet 110, it will first encounter the obstruction of the buffer plate 60, L7 is larger, which is beneficial to reduce the resistance of the measured airflow entering the group of dust collecting grooves 121, so that more measured airflow enters the group of dust collecting grooves 121, and is also beneficial to increase the residence time of the measured airflow in the group of dust collecting grooves 121, so that more solid impurities are adsorbed by the group of dust collecting grooves 121. L8 is smaller, which is conducive to forming turbulence of the airflow to be measured in each dust collecting groove 120 in the other group of dust collecting grooves 122, so that the airflow to be measured can be in greater contact with the groove wall of each dust collecting groove 120 in the other group of dust collecting grooves 122, allowing more solid impurities to be deposited, thereby reducing the solid impurities in the airflow to be measured, and reducing the number of solid impurities attached to the sensing diaphragm 20 when the airflow to be measured contacts the sensing diaphragm 20, thereby improving the detection stability of the sensing diaphragm 20 and extending the service life of the sensing diaphragm 20.

[0162] See also Figure 3 and Fig.13In one embodiment, at least one dust collecting groove 120 includes a primary dust collecting groove 123, a secondary dust collecting groove 124 and a tertiary dust collecting groove 125. Among them, along the axial direction O of the shell 10, the groove bottoms 123b, 124b, 125b of the primary dust collecting groove 123, the secondary dust collecting groove 124 and the tertiary dust collecting groove 125 are arranged in sequence. Along the axial direction O of the shell 10, the notch 123a of the primary dust collecting groove 123 is arranged opposite to the guide hole 610 of the buffer plate 60, and the notch 124a of the secondary dust collecting groove 124 is arranged opposite to the guide hole 710 of the guide plate 70. Along the radial direction R of the shell 10, the primary dust collecting groove 123, the secondary dust collecting groove 124 and the tertiary dust collecting groove 125 are arranged in sequence. Along the axial direction O of the shell 10 , the buffer plate 60 is aligned with the notch 124 a of the secondary dust collecting groove 124 , and the guide plate 70 is aligned with the notch 125 a of the tertiary dust collecting groove 125 .

[0163] In the embodiment of the present application, along the axial direction O of the shell 10, the groove bottoms 123b, 124b, and 125b of the first-level dust collecting groove 123, the second-level dust collecting groove 124, and the third-level dust collecting groove 125 are arranged in sequence at intervals, which is beneficial for the measured gas to enter the measuring cavity 520 from the air inlet 110, and then flow through the first-level dust collecting groove 123, the second-level dust collecting groove 124, and the third-level dust collecting groove 125 in sequence along the axial direction O of the shell 10, thereby realizing step-by-step impurity removal of the measured airflow, and attaching, settling, and collecting as many solid impurities in the measured airflow as possible.

[0164] In the embodiment of the present application, along the axial direction O of the shell 10, the notch 123a of the first-level dust collecting groove 123 is arranged opposite to the guide hole 610 of the buffer plate 60, and the notch 124a of the second-level dust collecting groove 124 is arranged opposite to the guide hole 710 of the guide plate 70, so that the airflow to be measured passes through the air inlet 110, the first-level dust collecting groove 123, the guide hole 610 of the buffer plate 60, the second-level dust collecting groove 124, the guide hole 710 of the guide plate 70, and the third-level dust collecting groove 125 in sequence, so as to remove impurities from the airflow to be measured, which is beneficial to reduce the amount of solid impurities attached to the sensing diaphragm 20, improve the detection stability of the capacitive film vacuum gauge 1, and extend the service life of the sensing diaphragm 20.

[0165] In the embodiment of the present application, along the radial direction R of the shell 10, the first-level dust collecting groove 123, the second-level dust collecting groove 124 and the third-level dust collecting groove 125 are arranged in sequence at intervals, which is beneficial for the measured gas to diffuse from the first-level dust collecting groove 123, the second-level dust collecting groove 124 and the third-level dust collecting groove 125 in sequence along the radial direction R of the shell 10 after entering from the air inlet 110, which is beneficial for extending the flow path of the measured airflow to reach the sensing diaphragm 20, allowing the dust collecting groove 120 to adsorb more solid impurities, which is beneficial for reducing the amount of solid impurities attached to the sensing diaphragm 20, improving the detection stability of the capacitive film vacuum gauge 1, and extending the service life of the sensing diaphragm 20.

[0166] In the embodiment of the present application, along the axial direction O of the shell 10, the buffer plate 60 is aligned with the notch 124a of the secondary dust collecting groove 124, and the guide plate 70 is aligned with the notch 125a of the tertiary dust collecting groove 125. After the gas to be measured flows out from the notch 123a of the primary dust collecting groove 123, it enters the interval between the buffer plate 60 and the guide plate 70 through the guide hole 610 of the buffer plate 60, and then is guided to the secondary dust collecting groove 124. After the airflow to be measured flows out from the notch 124a of the secondary dust collecting groove 124, it flows into the tertiary dust collecting groove 125 from the guide hole 710 of the guide plate 70, which is conducive to the airflow to be measured to reach the sensing diaphragm 20 more smoothly from the air inlet 110.

[0167] See also Fig.13 In one embodiment, the secondary dust collecting groove 124 includes a plurality of sub-dust collecting grooves 124c, and the plurality of sub-dust collecting grooves 124c are arranged in sequence along the radial direction R of the shell 10.

[0168] In the embodiment of the present application, the secondary dust collecting groove 124 includes a plurality of sub-dust collecting grooves 124c, so that the width of each sub-dust collecting groove 124c along the radial direction R is relatively small, which is conducive to the generation of turbulence in the airflow to be measured in each sub-dust collecting groove 124c, so that the airflow to be measured is in contact with the groove wall more, so that the groove wall absorbs more solid impurities, thereby reducing the solid impurities in the airflow to be measured, and reducing the number of solid impurities attached to the sensing diaphragm 20 when the airflow to be measured contacts the sensing diaphragm 20, thereby improving the detection stability of the sensing diaphragm 20 and extending the service life of the sensing diaphragm 20.

[0169] See also Fig.13 In one embodiment, at least one dust collecting groove 120 includes a dust collecting groove 120 structure of more than three levels, which provides more attachment space for solid impurities in the airflow to be measured, so that under harsh working conditions, the particles have sufficient space to attach and accumulate without affecting the normal operation of the capacitive diaphragm vacuum gauge 1, thereby improving the detection stability of the capacitive diaphragm vacuum gauge 1, reducing the interference of impurities, and improving the service life.

[0170] The capacitance film vacuum gauge and semiconductor device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and embodiments of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific embodiments and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A capacitance film vacuum gauge, characterized in that: The capacitance film vacuum gauge comprises a housing, a sensing diaphragm, a fixed electrode and a substrate. The sensing diaphragm is fixed in the housing and divides the inner cavity of the housing into a reference cavity and a measuring cavity. The measuring cavity is used to accommodate the gas flow to be measured, and the reference cavity is used to accommodate the fixed electrode and the substrate, wherein: The housing comprises a fixing protrusion, the fixing protrusion protrudes from the inner wall of the housing toward the inside of the housing along the radial direction of the housing, the fixing protrusion is used to support the substrate, and the sensing diaphragm is located between the fixing protrusion and the substrate along the axial direction of the housing; The surface of the substrate facing the sensing diaphragm comprises a groove, the groove is recessed away from the sensing diaphragm, and the bottom of the groove is used to fix the fixed electrode.

2. The capacitance film vacuum gauge according to claim 1, characterized in that: The shell is made of metal, and the substrate is made of ceramic.

3. The capacitance film vacuum gauge according to claim 1, characterized in that: The sensing diaphragm includes a fixed area and a working area, wherein the fixed area surrounds the outer periphery of the working area and is used to fix the shell. There is a gap between the working area and the fixed electrode, and the distance between the surface of the fixed area facing the substrate along the axial direction of the shell and the substrate is smaller than the distance between the working area and the fixed electrode.

4. The capacitance film vacuum gauge according to claim 3, characterized in that: A surface of the fixing area facing the substrate along the axial direction of the housing contacts the substrate and the fixing protrusion.

5. The capacitance film vacuum gauge according to claim 1, characterized in that: A distance between the fixed electrode and the inner wall of the shell along the radial direction of the shell is greater than a length of the fixed protrusion.

6. The capacitance film vacuum gauge according to any one of claims 1 to 5, characterized in that: The groove is integrally formed on a surface of the substrate facing the sensing diaphragm.

7. The capacitance film vacuum gauge according to any one of claims 1 to 5, characterized in that: The substrate comprises a substrate body and an annular support portion, the substrate body comprises a bottom surface facing the sensing diaphragm, the bottom surface is a plane, the bottom surface is used to fix the annular support portion and the fixed electrode, and the annular support portion and the bottom surface form the groove.

8. The capacitance film vacuum gauge according to claim 7, characterized in that: The annular support portion includes two end surfaces that are opposite to each other along the axial direction of the housing, and an area of ​​one end surface of the annular support portion close to the substrate body is greater than or equal to an area of ​​the other end surface.

9. The capacitance film vacuum gauge according to claim 7, characterized in that: The length of one end of the annular support portion away from the inner wall of the shell along the axial direction of the shell gradually increases from the side away from the inner wall of the shell to the side close to the inner wall of the shell.

10. The capacitance diaphragm vacuum gauge according to claim 1, characterized in that: The capacitance film vacuum gauge further includes an annular elastic member, which is used to fasten the fixing protrusion and the substrate. The housing further includes a cover plate, which is arranged opposite to the annular elastic member along the axial direction of the housing. One end of the annular elastic member is fixed to the cover plate along the axial direction of the housing, and the other end of the annular elastic member is fixed to the substrate, wherein: The free length of the annular elastic member is greater than the distance between the cover plate and the base plate.

11. The capacitance film vacuum gauge according to any one of claims 1 to 5, characterized in that: The housing further comprises a bottom plate, the bottom plate is located on a side of the sensing diaphragm away from the substrate, the bottom plate and the sensing diaphragm together form the measuring cavity, the bottom plate comprises an air inlet, the air inlet is used to input the airflow to be measured into the measuring cavity, wherein: The surface of the bottom plate facing the sensing diaphragm includes at least one dust collecting groove, and the at least one dust collecting groove surrounds the outer periphery of the air inlet hole along the radial direction of the shell. The notch of each dust collecting groove faces the sensing diaphragm, and each dust collecting groove is used to collect solid impurities in the airflow to be measured.

12. The capacitance diaphragm vacuum gauge according to claim 11, characterized in that: The at least one dust collecting groove comprises two groups of dust collecting grooves, each group of dust collecting grooves comprises at least one dust collecting groove, wherein: Along the radial direction of the shell, the air inlet hole, one group of the dust collecting grooves, and another group of the dust collecting grooves are arranged in sequence, and the distance between the bottom of each dust collecting groove in the one group and the sensing diaphragm is greater than the distance between the bottom of each dust collecting groove in the other group of dust collecting grooves and the sensing diaphragm.

13. The capacitance diaphragm vacuum gauge according to claim 12, characterized in that: Along the radial direction of the shell, the groove width of each dust collecting groove in the group of dust collecting grooves is greater than the groove width of each dust collecting groove in the other group of dust collecting grooves.

14. The capacitance diaphragm vacuum gauge according to claim 11, characterized in that: The capacitance film vacuum gauge further includes a buffer plate and a guide plate, wherein the buffer plate and the guide plate are fixed to the bottom plate, the buffer plate is used to buffer the impact force of the measured airflow on the sensing diaphragm, and the guide plate is used to increase the path length of the measured airflow flowing in the measuring cavity, and along the axial direction of the shell, the air inlet hole, the buffer plate, the guide plate, and the sensing diaphragm are arranged in sequence, wherein: The buffer plate and the guide plate include at least one guide hole, and each of the guide holes is opposite to a notch of at least one dust collecting groove along the axial direction of the shell.

15. A semiconductor device, characterized in that: A capacitance film vacuum gauge comprising any one of claims 1 to 14.

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