Curved surface ultra-thin metal co-doping coating device based on omni-directional distribution localized accumulation model

Abstract

The invention relates to the technical field of coating, and discloses a curved surface ultrathin metal co-doping coating device based on an omni-directional distribution localized accumulation model, which comprises a water cooling circulation system, a vacuum pump set, a mode switching motor control system, a rotary objective table, a sputtering head set and a sputtering head revolution support arm, the device has flexible mechanical degree of freedom and multiple working modes, and the uniformity of the coating thickness and the distribution precision of a doped material are remarkably improved through an omni-directional dispersion localized stacking model in combination with sputtering angle regulation and girdle splicing deposition. The device can realize switching between a single sputtering mode and a co-sputtering mode, is suitable for revolution surfaces with complex curvatures, such as a spherical surface and a paraboloid, and can be used for preparing uniform co-doped metal films in a thickness range of 5-35nm. According to the method, the time and cost in the deposition process can be effectively reduced, and the limitation of an existing method in the aspects of material diversity, film layer continuity and curved surface adaptability is overcome.

Description

Technical Field

[0001] The present application relates to the field of film coating technology, and in particular to a curved surface ultra-thin metal co-doping coating device based on an omnidirectional scattered localized accumulation model. Background Art

[0002] Thin film coatings are widely used in aerospace, automobiles, machine tools, chemical machinery, shipbuilding, power equipment, hardware tools, medical equipment, standard parts manufacturing and other fields. In particular, with the development of 5G communication technology and new light, thin and flexible electronic devices, the frequency components of electromagnetic wave signals in space are becoming more and more complex, and there is an urgent need to develop wide-band electromagnetic shielding, that is, optically transparent conductive / electromagnetic shielding thin film coatings for visual observation. At the same time, with the change of application environment, planar electromagnetic films based on planar coating technology are increasingly unable to adapt to the complex and changeable device surface shapes. Therefore, there is an urgent need to develop curved transparent conductive / electromagnetic shielding technology. However, the existing vacuum coating technology and equipment are very difficult to process fine structures on curved surfaces, and there are problems such as low efficiency and high cost, and it is impossible to achieve large-area and high-performance curved transparent conductive / electromagnetic shielding structures. Therefore, there is an urgent need for a universal method for preparing uniform thin films on curved surfaces.

[0003] Qiu Yang and others from the China Building Materials Science Research Institute reported a method to improve the uniformity of the thickness distribution of ITO thin films on spherical substrate surfaces, and used a modified planetary tooling to verify the proposed method. The optimized tooling configuration and process parameters were used to achieve the evaporation of ITO conductive films on the surface of large-sized hemispherical glass substrates. The thickness of the ITO thin films on the hemispherical substrate surface showed a trend of gradually becoming thinner from the top center to the edge of the ball, and the change trend was similar to a linear change, and the uniformity of the film thickness distribution was greatly improved.

[0004] K. Pfeiffer et al. from the University of Jena in Germany reported a method for preparing tantalum pentoxide, aluminum oxide and silicon dioxide optical films on curved surfaces using atomic layer deposition technology. The results showed that the optical layer can be deposited on vertical and horizontal substrate surfaces with uniform thickness and the same optical properties. It has been successfully applied to curved aspheric glass lenses with a diameter of 50 mm and a center thickness of 25 mm.

[0005] The technical solution with patent application number 202210604681.7 discloses a magnetic field-assisted robot-coordinated multi-nozzle electrospray curved surface coating device, describing a curved surface coating device composed of a robotic arm, an energized solenoid, an ink cartridge and a nozzle, which can achieve uniform and efficient coating of nano-sized droplets on large-area complex curved surfaces.

[0006] The technical solution with patent application number 201920742030.8 discloses a coating device for large-area curved glass, and describes a device that utilizes a new type of programmable motion system to control the vertical lifting and horizontal movement of a lifting platform and the motion trajectory of an ion discharge source, thereby realizing a curved coating device for large-area curved glass.

[0007] Although the above achievements have achieved uniform coating on curved surfaces to a certain extent, the following problems still exist: Ⅰ. It is still difficult to achieve uniform deposition of curved transparent conductive films using the above technologies. It is very difficult to uniformly deposit materials on curved surfaces and process fine structures, especially on curved structures with large curvatures. The available technologies are very limited. Therefore, how to break this technical barrier is an urgent problem to be solved.

[0008] Ⅱ. Although the atomic layer deposition technology commonly used in curved surface coating is expected to achieve pinhole-free, dense and conformal layer growth, the deposition speed of the atomic layer deposition technology is slow, which is difficult to adapt to the needs of low-cost, mass production; more importantly, the atomic layer deposition technology has few precursors and is expensive, making it difficult to deposit composite films with multiple materials, especially multi-layer films with uniform thickness. Therefore, there is an urgent need for a thin film deposition method with faster deposition speed and more diverse deposition materials.

[0009] III. Most of the existing curved surface coating technologies and equipment can only be adapted to a single material. It is difficult to ensure the uniformity and performance of the film for the co-doped deposition of multiple materials. This limits the application of composite material co-doped metal films in curved surface transparent conductive / electromagnetic shielding technology. The development of curved surface coating equipment and technology suitable for co-doped films can greatly reduce the cost of curved surface transparent conductive / electromagnetic shielding devices and further improve their performance. Therefore, it has important research value.

[0010] In summary, the existing curved surface coating technology is difficult to achieve large-area uniform coating on complex curved surfaces, and does not have the ability to co-dope coating on curved surfaces. At the same time, issues such as deposition speed and cost have always hindered the further application of existing curved surface coating technology. Summary of the invention

[0011] The purpose of the present application is to provide a curved surface ultra-thin metal co-doping coating device based on an omnidirectional scattered localized accumulation model, so as to achieve uniform ultra-thin metal co-doping coating with a thickness of nanometer size on the curved surface.

[0012] In order to achieve the above purpose, the technical solutions adopted are as follows: The present application provides a curved surface ultra-thin metal co-doping coating device based on an omnidirectional scattered localized accumulation model, comprising a water cooling circulation system, a vacuum pump group, a mode switching motor control system, a chamber, a rotating stage located in the chamber, a sputtering head group, a target power supply and a sputtering head revolution support arm; The water cooling circulation system is connected to the vacuum pump group, and is used to maintain the normal operation of the vacuum pump group; The vacuum pump group is connected to the chamber and is used to control the vacuum degree in the chamber; The rotating stage is used to carry the workpiece to be coated and drive the workpiece to rotate; The sputtering head group includes three sputtering heads, which are arranged above the rotating stage and connected to the target power supply, and the sputtering rate of the target material is changed by adjusting the output power of the target power supply, and a film is formed on the workpiece based on the deposition of sputtered particles; the three sputtering heads are respectively sputtering head 1, sputtering head 2 and sputtering head 3; The mode switching motor control system is connected to the sputtering head revolution support arm, and is used to switch the working state of the sputtering head group to realize the switching of three working modes, wherein the three working modes are single sputtering mode 1, single sputtering mode 2 and co-sputtering mode; when in single sputtering mode 1, only sputtering head 1 participates in the work; when in single sputtering mode 2, only sputtering head 2 participates in the work, and in single sputtering mode 1 or single sputtering mode 2, sputtering head 1 or sputtering head 2 is directly above the rotating stage, and when in co-sputtering mode, sputtering head 2 and sputtering head 3 participate in the work together, and the central axis of sputtering head 2 and sputtering head 3 passes through the center of the rotating stage; The sputtering head revolution support arm is connected to the sputtering head group and is used to change the sputtering angle of the sputtering head group relative to the rotating stage, and sputter the target material onto the workpiece through multiple sputtering at different angles to obtain an ultra-thin doped metal film.

[0013] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model, when the mode switching motor control system is connected to the sputtering head revolution support arm so that the working state of the sputtering head group is the co-sputtering mode, sputtering head two and sputtering head three sputter out different particles.

[0014] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional diffuse localized accumulation model, the ultra-thin doped metal film includes basic elements and doping elements, wherein the atomic concentration of the basic elements accounts for greater than or equal to 80%, and the total atomic concentration of the doping elements accounts for less than or equal to 20%; the thickness of the ultra-thin doped metal film is less than or equal to 35 nm and greater than or equal to 5 nm.

[0015] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model, the basic element is silver or copper, and the doping element includes one of aluminum, titanium, nickel, chromium, germanium, nitrogen and oxygen and a combination thereof.

[0016] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model, the rotation angle range of the sputtering head revolution support arm along the inner wall of the chamber in the chamber is 0-180°, and the adjustment angle range of the sputtering head group relative to the sputtering head revolution support arm is 0-45°.

[0017] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model, the rotation speed adjustment range of the rotating stage is 0-20 rpm.

[0018] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model, the chamber is connected to an air intake system, and the air intake system is used to fill the protective gas argon or the reactive gas nitrogen or oxygen.

[0019] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model, the working piece is a hemispherical, parabolic or conical surface of revolution, the aspect ratio of the height and the bottom diameter of the working piece is in the range of 0.5-2, and the bottom diameter of the working piece is in the range of 30 mm-1500 mm.

[0020] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional scattered localized accumulation model, the film thickness sputtered on the workpiece follows the omnidirectional scattered localized accumulation theoretical model of a rotating body of corresponding shape; When the workpiece is a hemispherical surface, the film thickness at any height on the workpiece is determined according to the mass of the sputtered target material and the relative position of the sputtering head and the workpiece: ; In the formula, Indicates the height of the workpiece The film thickness at Indicates the vertical height of any position on the workpiece, Indicates the mass of the target material sputtered away, represents the target density, represents the radius of the hemisphere, Indicates the radius of the horizontal ring at any position on the workpiece. It represents the vertical distance between the center of the hemisphere and the plane where the evaporation source is located. represents the horizontal distance between the evaporation source and the center of the sphere, Represents the horizontal polar coordinate angle of any position on the workpiece, Indicates the upper limit of the horizontal polar coordinate angle of the sputtering coverage area on the workpiece; when When , it is determined by the following formula : ; when When , it is determined by the following formula : .

[0021] The beneficial effects of this application are: 1. The mode switching motor control system, the sputtering head revolution support arm and the three sputtering head groups of the present application provide sufficient mechanical freedom to support single sputtering and co-doping modes. By controlling the power supply, sputtering time, stage speed and sputtering angle, after multiple multi-angle depositions, a large area of ​​uniform single material thin film or co-doped thin film can be prepared on a large area of ​​a large area rate curved surface, and the time and process costs can be effectively reduced.

[0022] 2. The co-doping mode of the present application effectively solves the problems of discontinuity and non-conductivity of metal films caused by the island-like growth mode of general single metal ultra-thin films on non-metal substrates. By doping other materials during the deposition process, additional growth sites are provided, and the prepared metal-doped ultra-thin films have excellent surface roughness and optoelectronic properties, and are expected to be widely used in the field of transparent conductive / electromagnetic shielding.

[0023] 3. The omnidirectional scattered localized accumulation theoretical model on which this application is based can provide precise guidance for the film thickness distribution during deposition of common hemispherical workpieces, and perform regional splicing deposition processing according to its annular zone deposition mode, ultimately being able to effectively prepare highly uniform thin films for hemispherical workpieces. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic structural diagram of a curved surface ultra-thin metal co-doping coating device based on an omnidirectional distributed localized accumulation model according to an embodiment of the present application is shown.

[0025] Figure 2 A structural schematic diagram of a mode switching motor control system according to an embodiment of the present application is shown.

[0026] Figure 3 A schematic diagram of the structure of the sputtering head revolution support arm according to an embodiment of the present application is shown; wherein (a) is a schematic diagram of the rotation angle range of the sputtering head revolution support arm, and (b) is a schematic diagram of the rotation of the sputtering head revolution support arm along the axis.

[0027] Figure 4A schematic diagram of mode switching of a curved surface ultra-thin metal co-doping coating device based on an omnidirectional distributed localized accumulation model according to an embodiment of the present application is shown.

[0028] Figure 5 Schematic diagrams of omnidirectional scattered localized accumulation models of a hemispherical workpiece according to an embodiment of the present application are shown; wherein (a) is a schematic diagram of an omnidirectional scattered mapping model of a hemispherical workpiece, (b) is a schematic diagram of a localized accumulation annular zone sputtering distribution model of a hemispherical workpiece, and (c) is a schematic diagram of a localized accumulation annular zone distribution area of ​​a hemispherical workpiece; x , y and z Represents the spatial coordinate system x axis, y Axis and z axis,( n ,0, h ) represents the coordinates of the evaporation source, ( x , y , z 0) represents the coordinates of any point on the hemispherical workpiece, It represents the angle between the line connecting any point on the half surface and the evaporation source and the normal line of the coating surface at that point. It represents the angle formed by the normal line of the small plane source and the straight line connecting the evaporation source and any point that can be coated. d Indicates the width of the localized accumulation sputtering distribution ring on the hemispherical workpiece, R represents the radius of the hemisphere, is the area of ​​the ring.

[0029] Reference numerals: 1. Water cooling circulation system; 2. Vacuum pump group; 3. Mode switching motor control system; 4. Chamber; 5. Rotating stage; 6. Sputtering head one; 7. Sputtering head two; 8. Sputtering head three; 9. Sputtering head revolution support arm; 10. Screw; 11. Laser beam shutter; 12. Target power supply. DETAILED DESCRIPTION

[0030] The following describes the embodiments of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0031] The specific implementation of the present application is further described in detail below in conjunction with the drawings and examples.

[0032] The embodiment of the present application provides a curved surface ultra-thin metal co-doping coating device based on an omnidirectional scattered localized accumulation model. Figure 1 FIG. 1 shows a schematic structural diagram of a curved surface ultra-thin metal co-doping coating device based on an omnidirectional distributed localized accumulation model according to an embodiment of the present application, such as Figure 1 As shown, the curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model includes a water-cooling circulation system 1, a vacuum pump group 2, a mode switching motor control system 3, a chamber 4 and a rotating stage 5 located in the chamber 4, a sputtering head group, a target power supply 12 and a sputtering head revolution support arm 9; wherein, the water-cooling circulation system 1 is connected to the vacuum pump group 2 to maintain the normal operation of the pump group; the vacuum pump group 2 is connected to the chamber 4 to control the vacuum degree in the chamber 4; the mode switching motor control system 3 is connected to the sputtering head revolution support arm 9 to switch the working state of the sputtering head group to realize the single sputtering mode one, the sputtering head three-control mode 8. The invention relates to a method for switching between three working modes: single sputtering mode 2 controlled by sputtering head 1 and co-sputtering mode controlled by sputtering head 6 and 2; the rotating stage 5 is used to carry the workpiece to be coated and drive the workpiece to rotate; the sputtering head group includes three sputtering heads and is arranged above the rotating stage 5 and connected to the target power supply 12, and is used to change the sputtering rate of the target material by adjusting the output power of the target power supply 12, and form a film on the workpiece based on the deposition of the sputtered particles; the sputtering head revolution support arm 9 is connected to the sputtering head group, and is used to change the sputtering angle of the sputtering head group relative to the rotating stage 5, and form a uniform film on the rotating curved workpiece by sputtering at different angles for multiple times.

[0033] In this embodiment, when the device is not working, the chamber 4 should be placed in a negative pressure state through the vacuum pump group 2 to avoid pollution sources in the air; when the device is working, it is necessary to first open the water cooling circulation system 1 and make the air pressure inside and outside the chamber 4 consistent through the air intake system to open the chamber 4 to place the workpiece. Then, the chamber 4 is placed in an ultra-vacuum state through the vacuum pump group 2, and the sputtering head involved in the work is switched through the mode switching motor control system 3, and a uniform single-material thin film or co-doped thin film is prepared by adjusting the angle of the sputtering head revolution support arm 9, the rotation speed of the rotating stage 5, the sputtering time, and the power of the target power supply 12.

[0034] In some embodiments, when the mode switching motor control system 3 is connected to the sputtering head revolution support arm 9 so that the working state of the sputtering head group is the co-sputtering mode, the sputtering head 2 7 and the sputtering head 3 8 sputter different particles.

[0035] In some embodiments, the ultra-thin doped metal film includes a base element and a doping element, wherein the atomic concentration of the base element is greater than or equal to 80%, and the total atomic concentration of the doping element is less than or equal to 20%; the thickness of the ultra-thin doped metal film is less than or equal to 35 nm and greater than or equal to 5 nm.

[0036] In some embodiments, the base element is silver or copper, and the doping element includes one of aluminum, titanium, nickel, chromium, germanium, nitrogen and oxygen, and a combination thereof.

[0037] In some embodiments, the rotation angle range of the sputtering head revolution support arm 9 in the chamber 4 along the inner wall of the chamber 4 is 0-180°, and the adjustment angle range of the sputtering head group relative to the sputtering head revolution support arm 9 is 0-45°.

[0038] In some embodiments, the rotation speed of the rotating stage 5 can be adjusted in a range of 0-20 rpm.

[0039] In some embodiments, the chamber 4 is connected to a gas intake system, and the gas intake system is used to fill the protective gas argon or the reactive gas nitrogen or oxygen.

[0040] Preferably, in the above-mentioned curved surface ultra-thin metal co-doping coating device based on the omnidirectional distributed localized accumulation model, the working piece is a hemispherical, parabolic or conical surface of revolution, the aspect ratio of the height and the bottom diameter of the working piece is in the range of 0.5-2, and the bottom diameter of the working piece is in the range of 30 mm-1500 mm.

[0041] In some embodiments, the film thickness sputtered on the workpiece follows a theoretical model of omnidirectional distribution and localized accumulation of a body of revolution of corresponding shape; When the workpiece is a hemispherical surface, the film thickness at any height on the workpiece is determined according to the mass of the sputtered target material and the relative position of the sputtering head and the workpiece: ; In the formula, Indicates the height of the workpiece The film thickness at Indicates the vertical height of any position on the workpiece, Indicates the mass of the target material sputtered away, represents the target density, represents the radius of the hemisphere, Indicates the radius of the horizontal ring at any position on the workpiece. It represents the vertical distance between the center of the hemisphere and the plane where the evaporation source is located. represents the horizontal distance between the evaporation source and the center of the sphere, Represents the horizontal polar coordinate angle of any position on the workpiece, Indicates the upper limit of the horizontal polar coordinate angle of the sputtering coverage area on the workpiece; when When , it is determined by the following formula : ; when When , it is determined by the following formula : .

[0042] In some embodiments, Figure 2 FIG. 2 shows a schematic diagram of a mode switching motor control system according to an embodiment of the present application. Figure 2 As shown, the mode switching motor control system 3 includes a driving component (not shown in the figure), a screw screw 10 and a laser beam shutter 11. The screwing depth of the screw screw 10 is controlled by the driving component to control the sputtering head involved in the work, and the screwing depth is positioned and controlled by the laser beam shutter 11. The driving component includes but is not limited to a servo motor.

[0043] In some embodiments, Figure 3 The schematic diagram of the structure of the sputtering head revolution support arm according to the embodiment of the present application is shown. The sputtering head revolution support arm 9 is connected to the sputtering head group consisting of three sputtering heads and the screw 10, and the swing angle of the sputtering head revolution support arm 9 can be controlled by a motor to achieve different sputtering angles.

[0044] In some embodiments, Figure 4 FIG. 1 shows a schematic diagram of the structure of the target power supply 12 in a curved surface ultra-thin metal co-doping coating device based on an omnidirectional distributed localized accumulation model according to an embodiment of the present application. Figure 4 As shown, the sputtering heads participating in the work are switched by the mode switching motor control system 3. When in single sputtering mode 1, only sputtering head 1 6 participates in the work; when in single sputtering mode 2, only sputtering head 2 7 participates in the work. In the single sputtering mode, the sputtering head is directly above the rotating stage 5. When in the co-sputtering mode, sputtering head 2 7 and sputtering head 3 8 participate in the work together, and at this time, the central axis of the two sputtering heads just passes through the center of the rotating stage 5. The sputtering head can be adjusted by the sputtering head motor to meet the required sputtering angle.

[0045] In some embodiments, Figure 5 FIG. 2 shows a schematic diagram of an omnidirectionally distributed localized accumulation model of a hemispherical workpiece according to an embodiment of the present application. Figure 5 As shown, the distance r from any point on the half surface to the evaporation source is: .

[0046] The angle between the line connecting any point on the half surface and the evaporation source and the normal line of the coating surface at that point is satisfy: ; The angle between the normal line of the small plane source and the straight line connecting the evaporation source and any point that can be coated satisfy: ; The film thickness of the evaporation source as a small plane source satisfies: ; In the formula, t s ( x , z 0) represents the film thickness at any position on the workpiece, Indicates the vertical height of any position on the workpiece, Indicates the mass of the target material sputtered away, represents the target density, represents the radius of the hemisphere, It represents the vertical distance between the center of the hemisphere and the plane where the evaporation source is located. represents the horizontal distance between the evaporation source and the center of the sphere, x Indicates the horizontal distance between any point on the workpiece and the center of the sphere.

[0047] When the diffusion angle of the evaporation source is small, the annular zone area S after deposition is: ; It represents the angle of the annulus edge relative to the center of the sphere after deposition.

[0048] Based on this, annular zone splicing deposition is performed at multiple sputtering angles to obtain a uniform film covering the entire spherical surface.

[0049] The above implementation modes are only used to illustrate the present application, and are not intended to limit the present application. Ordinary technicians in the relevant technical field may make various changes and modifications without departing from the spirit and scope of the present application. Therefore, all equivalent technical solutions also belong to the scope of the present application, and the scope of patent protection of the present application shall be limited by the claims.

Claims

1. A curved surface ultra-thin metal co-doping coating device based on an omnidirectional scattered localized accumulation model, characterized in that: It includes a water cooling circulation system, a vacuum pump group, a mode switching motor control system, a chamber, a rotating stage located in the chamber, a sputtering head group, a target power supply and a sputtering head revolution support arm; The water cooling circulation system is connected to the vacuum pump group, and is used to maintain the normal operation of the vacuum pump group; The vacuum pump group is connected to the chamber and is used to control the vacuum degree in the chamber; The rotating stage is used to carry the workpiece to be coated and drive the workpiece to rotate; The sputtering head group includes three sputtering heads, which are arranged above the rotating stage and connected to the target power supply, and the sputtering rate of the target material is changed by adjusting the output power of the target power supply, and a film is formed on the workpiece based on the deposition of sputtered particles; the three sputtering heads are respectively sputtering head 1, sputtering head 2 and sputtering head 3; The mode switching motor control system is connected to the sputtering head revolution support arm, and is used to switch the working state of the sputtering head group to realize the switching of three working modes, wherein the three working modes are single sputtering mode 1, single sputtering mode 2 and co-sputtering mode; when in single sputtering mode 1, only sputtering head 1 participates in the work; when in single sputtering mode 2, only sputtering head 2 participates in the work, and in single sputtering mode 1 or single sputtering mode 2, sputtering head 1 or sputtering head 2 is directly above the rotating stage, and when in co-sputtering mode, sputtering head 2 and sputtering head 3 participate in the work together, and the central axis of sputtering head 2 and sputtering head 3 passes through the center of the rotating stage; The sputtering head revolution support arm is connected to the sputtering head group and is used to change the sputtering angle of the sputtering head group relative to the rotating stage, and sputter the target material onto the workpiece through multiple sputtering at different angles to obtain an ultra-thin doped metal film.

2. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model as claimed in claim 1, characterized in that: When the mode switching motor control system is connected to the sputtering head revolution support arm so that the working state of the sputtering head group is the co-sputtering mode, the sputtering head two and the sputtering head three sputter different particles.

3. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model according to claim 1 is characterized in that: The ultra-thin doped metal film includes a basic element and a doping element, wherein the atomic concentration of the basic element is greater than or equal to 80%, and the total atomic concentration of the doping element is less than or equal to 20%; the thickness of the ultra-thin doped metal film is less than or equal to 35 nm and greater than or equal to 5 nm.

4. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model as claimed in claim 3, characterized in that: The basic element is silver or copper, and the doping element includes one of aluminum, titanium, nickel, chromium, germanium, nitrogen and oxygen, and a combination thereof.

5. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model according to claim 1, characterized in that: The rotation angle range of the sputtering head revolution support arm along the inner wall of the chamber in the chamber is 0-180°, and the adjustment angle range of the sputtering head group relative to the sputtering head revolution support arm is 0-45°.

6. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model according to claim 1, characterized in that: The rotation speed of the rotating stage can be adjusted in the range of 0-20 rpm.

7. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model according to claim 1, characterized in that: The chamber is connected to an air intake system, and the air intake system is used to fill the protective gas argon or the reactive gas nitrogen or oxygen.

8. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model according to claim 1, characterized in that: The workpiece is a hemispherical, parabolic or conical surface of revolution, the aspect ratio of the height of the workpiece to the bottom diameter is in the range of 0.5-2, and the bottom diameter of the workpiece is in the range of 30 mm-1500 mm.

9. The curved surface ultra-thin metal co-doping coating device based on the omnidirectional dispersion localized accumulation model according to claim 8, characterized in that: The thickness of the film sputtered on the workpiece follows a theoretical model of omnidirectional distribution and localized accumulation of a rotating body of corresponding shape; When the workpiece is a hemispherical surface, the film thickness at any height on the workpiece is determined according to the mass of the sputtered target material and the relative position of the sputtering head and the workpiece: ； In the formula, Indicates the height of the workpiece The film thickness at Indicates the vertical height of any position on the workpiece, Indicates the mass of the target material sputtered away, represents the target density, represents the radius of the hemisphere, Indicates the radius of the horizontal ring at any position on the workpiece. It represents the vertical distance between the center of the hemisphere and the plane where the evaporation source is located. represents the horizontal distance between the evaporation source and the center of the sphere, Represents the horizontal polar coordinate angle of any position on the workpiece, Indicates the upper limit of the horizontal polar coordinate angle of the sputtering coverage area on the workpiece; when When , it is determined by the following formula : ； when When , it is determined by the following formula : 。

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