Semiconductor electroplating equipment

Abstract

The present disclosure relates to a semiconductor electroplating apparatus for electroplating a metal onto a semiconductor device (101), the semiconductor electroplating apparatus comprising: a chamber (1); the cathode (2) is arranged at the top of the cavity (1), and the cathode (2) is electrically connected to the semiconductor device (101); the anode (3) is arranged at the bottom of the cavity (1); the diffusion disc (4) is arranged in the cavity (1) and located between the cathode (2) and the anode (3), the diffusion disc (4) comprises a disc body (42) and a paramagnetic force generation assembly (41), a plurality of liquid outlet holes (43) are formed in the disc body (42), the paramagnetic force generation assembly (41) is configured to generate paramagnetic force for promoting metal ions (102) to move from the anode (3) to the cathode (2), and the liquid outlet holes (43) are formed in the disc body (42). And the paramagnetic force in the central area of the diffusion disc (4) is greater than the paramagnetic force in the edge area of the diffusion disc (4).

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor electroplating, and in particular to a semiconductor electroplating device. Background Art

[0002] During the semiconductor electroplating process, the terminal effect causes the edge plating current to be larger than the center plating current, and more metal atoms gather on the edge of the semiconductor wafer rather than the center of the semiconductor wafer, resulting in unevenness in the metal layer after semiconductor electroplating.

[0003] In the related art known to the inventor, similar plating current is maintained for semiconductor wafers by adjusting the current balance between the edge and center of the wafer to mitigate the terminal effect and thereby promote uniform metal plating on the surface of the semiconductor wafer, but current control is difficult and the method is complicated. Utility Model Content

[0004] The embodiments of the present disclosure provide a semiconductor electroplating device capable of improving the uniformity of a metal layer after semiconductor electroplating.

[0005] According to the present disclosure, a semiconductor electroplating device is provided for electroplating metal onto a semiconductor device. The semiconductor electroplating device comprises:

[0006] Chamber;

[0007] A cathode is disposed at the top of the chamber, and the cathode is electrically connected to the semiconductor device;

[0008] an anode disposed at the bottom of the chamber; and

[0009] The diffusion disk is arranged in the chamber and located between the cathode and the anode. The diffusion disk includes a disk body and a paramagnetic force generating component. The disk body is provided with a plurality of liquid outlet holes. The paramagnetic force generating component is configured to generate a paramagnetic force that promotes the movement of metal ions from the anode to the cathode, and the paramagnetic force located in the central area of ​​the diffusion disk is greater than the paramagnetic force located in the edge area of ​​the diffusion disk.

[0010] In some embodiments, the paramagnetic force generating assembly includes a plurality of electromagnetic coil assemblies disposed in the disc body, and the magnetic field strength generated by the electromagnetic coil assembly located in the central area of ​​the diffusion disc is greater than the magnetic field strength generated by the electromagnetic coil assembly located in the edge area of ​​the diffusion disc.

[0011] In some embodiments, the magnetic field strength of the electromagnetic coil assembly is adjustable.

[0012] In some embodiments, the electromagnetic coil assembly and the disk body are integrally formed, and the electromagnetic coil assembly includes a plurality of coils, wherein:

[0013] The current of the coil located in the center area of ​​the diffuser is greater than the current of the coil located in the edge area of ​​the diffuser; and / or

[0014] The number of turns of the coil located in the center area of ​​the diffusion disk is greater than the number of turns of the coil located in the edge area of ​​the diffusion disk.

[0015] In some embodiments, the electromagnetic coil assembly includes a plurality of first coils, and the plurality of first coils surround the hole walls of the plurality of liquid outlet holes in a one-to-one correspondence.

[0016] In some embodiments, the electromagnetic coil assembly includes a plurality of second coils, and the plurality of second coils are disposed in the region between adjacent liquid outlet holes of the disk.

[0017] In some embodiments, the electromagnetic coil assembly further includes a plurality of magnetic columns, and the plurality of second coils surround the plurality of magnetic columns in a one-to-one correspondence; and / or

[0018] A plurality of liquid outlet holes are arranged in an array on the disk body, and the magnetic column is located in a central area between four adjacent liquid outlet holes.

[0019] In some embodiments, the semiconductor electroplating apparatus further comprises:

[0020] A pressure plate, disposed above the semiconductor device and configured to drive the semiconductor device to move; and

[0021] The magnetic field regulating device is embedded in the pressure plate and is configured to cooperate with the paramagnetic force generating component to generate a magnetic field in which the magnetic flux lines are perpendicular to the semiconductor device, and the magnetic field strength in the central area of ​​the semiconductor device is greater than the magnetic field strength in the edge area of ​​the semiconductor device.

[0022] In some embodiments, the magnetic field generated by the magnetic field adjustment device and the magnetic field generated by the paramagnetic force generating component attract each other and have corresponding magnitudes.

[0023] In some embodiments, the semiconductor device includes a wafer.

[0024] Based on the above technical scheme, the semiconductor electroplating equipment of the embodiment of the present disclosure can accelerate the movement speed of the electroplating ions, improve the hole filling ability, and change the deposition rate at the center and edge of the semiconductor device by arranging a paramagnetic force generating component on the diffusion disk to introduce paramagnetic force; by controlling the migration rate of the electroplating ions at the center and edge of the semiconductor device, it is possible to control the electroplating rate at the center and edge of the wafer, thereby compensating for the current difference between the center and edge of the semiconductor device to improve the terminal effect, and improve the uniformity of the metal layer after semiconductor electroplating. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings described herein are used to provide a further understanding of the present disclosure and constitute a part of the present application. The illustrative embodiments of the present disclosure and their descriptions are used to explain the present disclosure and do not constitute an improper limitation on the present disclosure. In the drawings:

[0026] Figure 1 Schematic diagram of disassembly of some embodiments of the semiconductor electroplating equipment disclosed herein.

[0027] Figure 2 Schematic diagram of the structure of some embodiments of the diffusion plate of the semiconductor electroplating equipment disclosed in the present invention.

[0028] Figure 3 Schematic diagram of the principle of the paramagnetic force acting on metal ions in some embodiments of the semiconductor electroplating equipment disclosed herein.

[0029] Figure 4 Schematic diagrams of the structures of other embodiments of the diffusion plate of the semiconductor electroplating equipment disclosed in the present invention.

[0030] Figure 5 Schematic diagram of magnetic field distribution of some embodiments of the diffusion disk of the semiconductor electroplating equipment disclosed in the present invention.

[0031] Figure 6 Schematic diagrams of some embodiments of the arrangement of liquid outlet holes and magnetic columns of the semiconductor electroplating equipment disclosed in the present invention.

[0032] Figure 7 Schematic diagram of the structure of some embodiments of the semiconductor electroplating equipment disclosed in the present invention.

[0033] Figure 8 Schematic diagrams of principles of other embodiments of the semiconductor electroplating equipment disclosed herein.

[0034] Description of Reference Numerals

[0035] 1. Chamber; 2. Cathode; 3. Anode; 4. Diffusion disk; 5. Pressure disk; 6. Magnetic field regulating device; 7. Ion membrane; 8. Electrical contact; 41. Paramagnetic force generating component; 42. Disk body; 43. Liquid outlet; 410. Electromagnetic coil component; 401. First coil; 411. Magnetic column; 412. Second coil; 101. Semiconductor device; 102. Metal ions. DETAILED DESCRIPTION

[0036] The present disclosure is described in detail below. In the following paragraphs, different aspects of the embodiments are defined in more detail. Each aspect so defined can be combined with any other aspect or aspects, unless explicitly stated not to be combined. In particular, any feature that is considered to be preferred or advantageous can be combined with one or more other features that are considered to be preferred or advantageous.

[0037] The terms "first", "second", etc. that appear in the present disclosure are only for the convenience of description to distinguish different components with the same name, and do not indicate a sequence or a primary and secondary relationship.

[0038] In the description of the present disclosure, it is necessary to understand that the terms "upper", "lower", "inside" or "outside" etc. indicating orientation or positional relationship are defined based on a chamber, a diffusion plate or a semiconductor device etc., and are only for the convenience of describing the present disclosure, and do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the scope of protection of the present disclosure.

[0039] Semiconductor electroplating equipment is used to perform a metal electroplating process to electroplate metal onto a semiconductor wafer, such as in a groove, a through-hole structure, or other parts of a semiconductor wafer, to form a seed layer such as a copper layer or a cobalt layer above the surface of the semiconductor wafer. The seed layer carries the plating current from the wafer edge of the semiconductor wafer across the surface of the semiconductor wafer. The plating current is provided by a power supply connected to the anode and connected to the edge of the wafer as a cathode. The plating current provides electrons that convert metal ions into metal atoms and accumulate on the surface of the semiconductor wafer. The seed layer has a resistance from the edge of the wafer to the central area of ​​the semiconductor wafer, which causes a voltage drop, thereby causing a terminal effect, in which the plating current at the edge of the wafer is higher than that in the central area. The higher plating current causes more metal atoms to accumulate at the edge of the wafer than in the central area, resulting in non-uniformity problems across the wafer. With the development of the process and the pursuit of the process, the impact of the terminal effect will become more obvious.

[0040] The inventors found in the research process that most of the existing technologies change the current size at the center and edge of the electroplating process to improve the terminal effect. The basic methods are to improve the flow field of the electroplating solution by designing the electroplating chamber, and to influence the electroplating current by using a high-resistance current-uniforming insulating plate, so that the edge electroplating current has a current value similar to that of the center electroplating current; the addition of the second cathode, which transfers part of the current from the near-edge area of ​​the wafer and improves the uniformity of the coating; and the introduction of the magnetic field Lorentz force will cause the electroplating ions to tend to the center of the wafer to change the edge and center current size. The core of the above technology is that there is a difference in the current at the center and edge of the wafer to change the deposition rate of the electroplating process, thereby improving the current situation where the center is thin and the edge is thick after the wafer is electroplated. The existing technology is relatively complex to implement and control.

[0041] To solve the above problems, the present disclosure provides a semiconductor electroplating device for electroplating metal onto a semiconductor device 101, such as onto a wafer. Figures 1 to 8 As shown, the semiconductor electroplating equipment includes:

[0042] Chamber 1;

[0043] A cathode 2 is disposed at the top of the chamber 1 and is electrically connected to the semiconductor device 101;

[0044] an anode 3 disposed at the bottom of the chamber 1; and

[0045] The diffusion disk 4 is arranged in the chamber 1 and is located between the cathode 2 and the anode 3. The diffusion disk 4 includes a disk body 42 and a paramagnetic force generating component 41. The disk body 42 is provided with a plurality of liquid outlet holes 43. The paramagnetic force generating component 41 is configured to generate a paramagnetic force that promotes the movement of metal ions 102 from the anode 3 to the cathode 2, and the paramagnetic force located in the central area of ​​the diffusion disk 4 is greater than the paramagnetic force located in the edge area of ​​the diffusion disk 4.

[0046] Specifically, a uniform magnetic field affects the magnetic susceptibility of magnetic ions, generating local energy density. When the ion concentration has a gradient in the diffusion layer near the cathode, this will generate a paramagnetic force, which will cause diamagnetic and paramagnetic ions to move in the magnetic field. It is independent of the direction of the magnetic field and is proportional to the square of the magnetic field strength. Specifically, the formula for calculating the paramagnetic force is: where χ m is the molar magnetic susceptibility, B is the magnetic flux, μ0 is the magnetic permeability of free space, and C is the ion concentration.

[0047] Specifically, relevant experiments show that under the action of Lorentz force or paramagnetic force, the surface roughness of the coating is lower and the coating is denser. Under the action of paramagnetic force, the hole filling ability of metal ion plating becomes better, the deposition rate increases, and the lattice and crystal phase of the plated copper film are not changed under the action of paramagnetic force.

[0048] Specifically, the related technologies include a scheme of using a magnetic structure to move metal ions away from the edge of the wafer or to the center of the wafer, or a scheme of using a rotating magnetic field to change the motion trajectory of charged particles during the electroplating process. The above schemes all involve introducing the Lorentz force to change the movement direction of the metal ions, which makes significant changes to the existing electroplating equipment and has the disadvantages of unclear improvement effect, many moving parts that are prone to wear, high energy consumption, easy heat generation, and difficulty in achieving a uniform magnetic field.

[0049] Specifically, the basis of the paramagnetic force is the existence of a concentration gradient of ions. During semiconductor electroplating, there is a concentration gradient in the electron-acquisition region of the semiconductor device 101 above the diffusion disk 4 and below the front (lower surface) of the semiconductor device 101. Microscopically, there is a concentration gradient in the liquid outlet 43 of the diffusion disk 4. Accordingly, the paramagnetic force will act on the copper ions or cobalt ions at the liquid outlet 43.

[0050] Specifically, based on the above calculation formula as the theoretical basis, when the ion concentration is determined, the quantity that can have a significant effect on the paramagnetic force is the magnetic flux. The paramagnetic force generating component 41 disclosed in the present invention and the magnetic field regulating device 6 in the following embodiments both change the magnitude of the magnetic flux to control the magnitude of the paramagnetic force exerted on the ions in the magnetic field.

[0051] Specifically, an ion membrane 7 is also provided in the chamber 1 of the semiconductor electroplating equipment, and the ion membrane 7 is provided between the anode 3 and the diffusion disk 4; an electric contact 8 is provided on the cathode 2, and an electric field is formed by the electric contact 8 and a power supply connected between the cathode 2 and the anode 3, so that the metal ions 102 move in the electric field, thereby achieving the purpose of coating; the plating solution is introduced so that the plating solution is in full contact with the side (front side) of the semiconductor device 101 that needs to be coated.

[0052] Specifically, during the electroplating process, the semiconductor device 101 is configured as at least part of the top wall of the chamber 1, and the front side (lower surface) of the semiconductor device 101 contacts the electroplating solution. Specifically, the structural design of the plurality of liquid outlet holes 43 on the diffusion plate 4 can make the electroplating solution flowing through the liquid outlet holes 43 uniform.

[0053] Specifically, the paramagnetic force generating component 41 can promote the metal ions 102 to move more effectively from the anode 3 to the cathode 2 by generating a magnetic field, which can improve the controllability of the deposition rate and distribution of the metal ions 102 during the electroplating process, thereby improving the electroplating quality. Specifically, the paramagnetic force located in the central area of ​​the diffusion disk 4 is greater than the paramagnetic force located in the edge area of ​​the diffusion disk 4, which can increase the metal thickness in the central area of ​​the semiconductor device 101 and improve the uniformity of the metal layer deposited on the front of the semiconductor device 101 during the electroplating process.

[0054] Optionally, the paramagnetic force generating component 41 may include a magnetic structure such as a permanent magnet, an electromagnet or a coil. Optionally, the paramagnetic force generating component 41 may be disposed on the surface of the diffusion disk 4 or inside the diffusion disk 4, for example, integrally formed with the disk body 42.

[0055] This embodiment introduces paramagnetic force by arranging a paramagnetic force generating component 41 on the diffusion disk 4, thereby accelerating the movement speed of the electroplated metal ions 102, changing the deposition rate at the center and edge of the semiconductor device 101, improving the surface roughness of the coating, improving the hole filling ability, and improving the product yield; by controlling the electroplating ion migration rate at the center and edge of the semiconductor device 101, it is possible to control the electroplating rate at the center and edge of the semiconductor device 101, thereby compensating for the current difference between the center and edge of the semiconductor device 101 to improve the terminal effect and improve the uniformity of the metal layer after semiconductor electroplating; it is possible to increase the normal operating time of the machine and increase the output.

[0056] In some embodiments, Figures 2 to 5 As shown, the paramagnetic force generating assembly 41 includes a plurality of electromagnetic coil assemblies 410 disposed in the disc body 42 . The magnetic field strength generated by the electromagnetic coil assemblies 410 located in the central area of ​​the diffusion disc 4 is greater than the magnetic field strength generated by the electromagnetic coil assemblies 410 located in the edge area of ​​the diffusion disc 4 .

[0057] Specifically, the magnetic field strength generated by the electromagnetic coil assembly 410 in the center area is greater than that in the edge area, that is, a more efficient deposition of metal ions 102 can be achieved in the center of the semiconductor device 101, while the edge area can avoid the problem of over-plating or uneven deposition through a lower magnetic field strength. Specifically, the magnetic flux lines generated by the paramagnetic force generating assembly 41 are perpendicular to the semiconductor device 101 or nearly perpendicular to the semiconductor device 101. Optionally, the magnetic field strength can be between 0.001T and 100T.

[0058] This embodiment generates a magnetic field by means of an electromagnetic coil assembly 410 in a disk body 42, and the magnetic field strength in the central area is greater than that in the edge area. The electroplating rate at the center and edge of the semiconductor device 101 can be controlled by magnetic field regulation, thereby improving the terminal effect and increasing the uniformity of the metal layer after semiconductor electroplating.

[0059] In some embodiments, the magnetic field strength of electromagnetic coil assembly 410 is adjustable.

[0060] Specifically, by making the magnetic field strength of the electromagnetic coil assembly 410 adjustable, the magnetic field strength in the central area can be increased, the magnetic field strength in the edge area can be reduced, and the uniformity of the metal layer after semiconductor electroplating can be improved. Specifically, the adjustable magnetic field strength can be adjusted in real time or in preset according to the needs of the actual electroplating process, which can enhance the dynamic adaptability of the equipment. More specifically, the adjustable magnetic field strength means that the electroplating equipment is no longer limited to a single fixed magnetic field strength mode, and can be personalized and flexibly operated according to different semiconductor device types, sizes, materials, and desired electroplating effects.

[0061] Specifically, the adjustable magnetic field strength can finely control the migration speed and deposition process of metal ions, and can accurately adjust the thickness, composition distribution and grain growth morphology of the electroplated layer, thereby optimizing the surface quality and performance of semiconductor devices. Specifically, when a high-intensity magnetic field is not required, energy consumption is reduced, and when efficient deposition is required, the magnetic field strength is increased, which can improve energy utilization and enhance electroplating efficiency.

[0062] This embodiment can improve the intelligence level and process flexibility of semiconductor electroplating equipment by adjusting the magnetic field strength of the electromagnetic coil assembly, which helps to improve the uniformity of the metal layer after semiconductor electroplating, improve electroplating efficiency, improve product quality, save resources, etc.

[0063] In some embodiments, the electromagnetic coil assembly 410 and the disk body 42 are integrally formed.

[0064] Specifically, the integrated molding can improve the positioning accuracy of the electromagnetic coil assembly 410, ensure that the magnetic field distribution meets the requirements, thereby accurately regulating the migration of metal ions and improving the uniformity of the metal layer after semiconductor electroplating. Optionally, the electromagnetic coil assembly 410 can be of any shape.

[0065] This embodiment can enhance the connection strength between the electromagnetic coil assembly 410 and the disk body 42 through an integrated molding process, thereby ensuring the stability and safety of the long-term operation of the electroplating equipment; the integrated molding process can simplify the production process, reduce costs, improve production efficiency, and help improve the positioning accuracy of the electromagnetic coil; the integrated design also helps to reduce failure points, extend the service life of the electroplating equipment, and meet the needs of miniaturization, precision and high-quality electroplating processes.

[0066] In some embodiments, Figures 2 to 5 As shown, the electromagnetic coil assembly 410 includes a plurality of coils.

[0067] The current of the coil located in the center area of ​​the diffusion disk 4 is greater than the current of the coil located in the edge area of ​​the diffusion disk 4; and / or

[0068] The number of turns of the coil located in the central area of ​​the diffusion disk 4 is greater than the number of turns of the coil located in the edge area of ​​the diffusion disk 4 .

[0069] Specifically, when the number of coil turns is constant and the coil is not wrapped around the magnetic column, the coil current in the central area is greater than the coil current in the edge area, so that the magnetic field strength in the central area is greater than the magnetic field strength in the edge area, which can improve the uniformity of the metal layer after semiconductor electroplating.

[0070] Specifically, when the coil current is constant and the coil is not wrapped around the magnetic column, the number of coil turns in the central area is greater than that in the edge area, so that the magnetic field strength in the central area is greater than that in the edge area, which can improve the uniformity of the metal layer after semiconductor electroplating.

[0071] This embodiment can simply and accurately control the magnetic field strength on demand by making the current and / or number of turns of the coil in the center area greater than that of the coil in the edge area, so that the magnetic field strength in the center area is greater than that in the edge area, thereby improving the uniformity of the metal layer after semiconductor electroplating.

[0072] In some embodiments, Figure 2 As shown, the electromagnetic coil assembly 410 includes a plurality of first coils 401, and the plurality of first coils 401 are respectively surrounded by the hole walls of the plurality of liquid outlet holes 43. Optionally, the current and / or number of turns of the plurality of first coils 401 can be adjusted, for example, the number of turns can be adjusted before the integrated molding process.

[0073] Specifically, based on the maximum allowable current of the first coil 401, the current size is variable and adjustable, and different numbers of turns of the first coil 401 can be arranged from the inside to the outside to obtain different magnetic field strengths; based on different apertures of the liquid outlet 43 and different thicknesses of the diffusion disk 4, the number of turns of the first coil 401 and the current size can be changed accordingly, and the corresponding magnetic field strength from the inside to the outside is relative to the current size of the semiconductor device 101 from the inside to the outside, so that the deposition rate of each area from the inside to the outside is controllable and variable; macroscopically, the magnetic field strength of the semiconductor device 101 from the inside to the outside changes from strong to weak.

[0074] Each first coil 401 of this embodiment corresponds to a liquid outlet 43, which can specifically apply paramagnetic force to the metal ions 102, strengthen local electroplating control, increase the thickness of the electroplating layer in the central area, and improve the uniformity of the metal layer after electroplating; the first coil 401 is tightly combined with the liquid outlet 43, which can improve the space utilization of the equipment; it can optimize the matching degree between the magnetic field distribution and the liquid flow path, and improve the electroplating efficiency.

[0075] In some embodiments, Figure 4 As shown, the electromagnetic coil assembly 410 includes a plurality of second coils 412, which are disposed in the region between adjacent liquid outlets 43 of the disk body 42. Optionally, the current and / or number of turns of the plurality of second coils 412 can be adjusted, for example, the number of turns can be adjusted before the integral molding process.

[0076] Specifically, similar to the layout of the first coil 401 mentioned above, based on the maximum allowable current of the second coil 412, the current size is variable and adjustable, and the second coil 412 with different numbers of turns can be arranged from the inside to the outside to obtain different magnetic field strengths; based on the diffusion disk 4 with different thicknesses, the number of turns and the current size of the second coil 412 can be changed accordingly, and the corresponding magnetic field strength size from the inside to the outside is relative to the current size of the semiconductor device 101 from the inside to the outside, so that the deposition rate of each area from the inside to the outside is controllable and variable; macroscopically, the magnetic field strength of the semiconductor device 101 from the inside to the outside changes from strong to weak.

[0077] The second coil 412 of this embodiment is arranged in the area between adjacent liquid outlet holes 43 of the disk body 42, which can fully utilize the space of the disk body 42, strengthen the magnetic field strength in the central area, apply paramagnetic force to the metal ions 102 in a targeted manner, and improve the uniformity of the metal layer after electroplating.

[0078] In some embodiments, the electromagnetic coil assembly 410 includes multiple first coils 401 and multiple second coils 412. The multiple first coils 401 surround the hole walls of the multiple liquid outlet holes 43 one by one, and the multiple second coils 412 are arranged in the area between adjacent liquid outlet holes 43 of the disk body 42.

[0079] This embodiment fills multiple second coils 412 in the interval area between the liquid outlet holes 43 to form a continuous and uniform magnetic field transition zone, reduce the magnetic field mutation between adjacent liquid outlet holes 43, make the migration process of the metal ions 102 smoother, and help improve the uniformity of the electroplating layer; the second coil 412 cooperates with the first coil 401 to jointly regulate the movement speed of the metal ions 102, which can not only enhance the electroplating effect in the middle area, but also make up for the limitations of the magnetic field guidance of a single liquid outlet hole 43, thereby optimizing the electroplating control on the surface of the semiconductor device 101.

[0080] In some embodiments, Figure 4 As shown, the electromagnetic coil assembly 410 further includes a plurality of magnetic columns 411 , and a plurality of second coils 412 surround the plurality of magnetic columns 411 in a one-to-one correspondence.

[0081] Optionally, the magnetic column 411 may be a ferrite or permanent magnet column, etc., and the magnetic field strength of the magnetic column 411 is adjustable. Specifically, the magnitude of the magnetic field strength from the inside to the outside is relative to the magnitude of the current from the inside to the outside of the semiconductor device 101, and the deposition rate of each region from the inside to the outside is controllable and variable. Macroscopically, the magnetic field strength of the semiconductor device 101 from the inside to the outside changes from strong to weak. Optionally, the magnetic column 411 may be of any shape.

[0082] This embodiment can enhance the concentration of the magnetic field generated by the second coil 412 by setting the magnetic column 411. When the current passes through the second coil 412, the magnetic column 411 will amplify and concentrate the magnetic field, increase the magnetic field strength, and improve the electroplating efficiency. The structure of the second coil 412 surrounding the magnetic column 411 can enhance the mechanical stability of the equipment, reduce the loss of electromagnetic components in long-term operation, and extend the service life of the electroplating equipment.

[0083] In some embodiments, Figure 6 As shown, a plurality of liquid outlet holes 43 are arranged in an array on the disk body 42 , and the magnetic column 411 is located in the central area between four adjacent liquid outlet holes 43 .

[0084] Specifically, the liquid outlet holes 43 are arranged in an array so that the plating liquid is evenly distributed, and the magnetic pillars 411 are located in the centers of four adjacent holes, which can effectively utilize the space and ensure that the magnetic field covers all the liquid outlet holes 43, thereby enhancing the global control of the migration of the metal ions 102.

[0085] Specifically, the position design of the magnetic column 411 makes the influence of the magnetic field on the surrounding four liquid outlet holes 43 relatively balanced, which helps to improve the consistency and accuracy of the thickness of the electroplating layer and avoid the phenomenon of local excessive thickness or excessive thinness.

[0086] This embodiment can optimize the control of the magnetic field on the electroplating process by scientifically arranging the liquid outlet holes and the magnetic columns, promote the uniformity and accuracy of the electroplated metal layer, and help improve the performance and yield of semiconductor devices.

[0087] In some embodiments, Figure 1 and Figure 7 As shown, the semiconductor electroplating equipment also includes:

[0088] A pressure plate 5, disposed above the semiconductor device 101, configured to drive the semiconductor device 101 to move; and

[0089] The magnetic field regulating device 6 is embedded in the pressure plate 5. The magnetic field regulating device 6 is configured to cooperate with the paramagnetic force generating component 41 to generate a magnetic field in which the magnetic flux lines are perpendicular to the semiconductor device 101, and the magnetic field strength located in the central area of ​​the semiconductor device 101 is greater than the magnetic field strength located in the edge area of ​​the semiconductor device 101.

[0090] Specifically, the pressure plate 5 can drive the semiconductor device 101 to rotate, translate or shake, etc., to ensure that the semiconductor device 101 can rotate and move during the coating process to improve the uniformity of the coating. Optionally, the magnetic field adjustment device 6 can be a permanent magnet or an adjustable pressure plate. Specifically, the pressure plate 5 is arranged on the back of the semiconductor device 101. Optionally, the pressure plate 5 and the magnetic field adjustment device 6 can be integrated to form an electromagnetic pressure plate.

[0091] Optionally, the magnetic field strength of the magnetic field regulating device 6 and the front surface of the semiconductor device 101 can be the same or different, and the magnetic properties are opposite, so that there is a gradient-controllable magnetic field strength between the two magnetic field areas, which accelerates the metal ions 102 on the path between the diffusion disk 4 and the front surface of the semiconductor device 101.

[0092] The pressure plate 5 of this embodiment is arranged above the semiconductor device 101 and drives it to move, which can ensure that it is fully in contact with the plating solution during the electroplating process and is evenly plated, while also ensuring its position is stable to avoid uneven electroplating; the magnetic field regulating device 6 is embedded in the pressure plate 5, and cooperates with the paramagnetic force generating component 41 in the diffusion plate 4 to generate a magnetic field perpendicular to the surface of the semiconductor device 101, which can accurately control the deposition of metal ions 102 in the vertical direction and improve the uniformity of the metal layer after electroplating; the magnetic field regulating device 6 can adjust the distribution of the magnetic field intensity to ensure that the magnetic field intensity in the central area of ​​the semiconductor device 101 is higher than that in the edge area, which is beneficial to improve the uniformity of the metal layer after electroplating and improve the yield rate.

[0093] In some embodiments, the magnetic field generated by the magnetic field adjustment device 6 and the magnetic field generated by the paramagnetic force generating component 41 attract each other and have corresponding magnitudes.

[0094] Specifically, the magnetic field generated by the magnetic field adjustment device 6 and the magnetic field generated by the paramagnetic force generating component 41 are from the N pole to the S pole or from the S pole to the N pole. Figure 8As shown, the semiconductor device 101 is arranged between the uniform magnetic fields generated by the N / S stage, and the magnetic field strength decreases from the center to the edge of the semiconductor device 101. Correspondingly, the direction of the magnetic field can be adjusted by adjusting the current magnitude and direction of the first coil 401 and the second coil 412, and the magnetic field strength and direction can also be adjusted by the magnetic field adjustment device 6. Optionally, the magnetic field generated by the magnetic field adjustment device 6 and the paramagnetic force generating component 41 not only has a specific design in spatial distribution (i.e., perpendicular to the semiconductor device 101 and presenting a decreasing gradient change from the center to the edge), but also corresponds to each other at all times and has the same direction in terms of action time.

[0095] In this embodiment, the magnetic field generated by the magnetic field regulating device 6 and the magnetic field generated by the paramagnetic force generating component 41 attract each other and have corresponding sizes, so that the cooperation relationship between the magnetic field regulating device 6 and the paramagnetic force generating component 41 is closer, and the magnetic field effects generated by the two components are synchronized to jointly guide and control the migration behavior of the metal ions 102 during the electroplating process, ensuring that the deposition process is carried out accurately according to the preset requirements, which is conducive to promoting the uniform distribution of the thickness of the metal layer on the surface of the semiconductor device 101.

[0096] In some embodiments, semiconductor device 101 includes a wafer.

[0097] Specifically, wafers are basic materials for manufacturing various semiconductor components (eg, integrated circuits, diodes, transistors, etc.).

[0098] This embodiment introduces paramagnetic force by setting a paramagnetic force generating component 41 on the diffusion disk 4, which can accelerate the movement speed of the electroplated metal ions 102, improve the hole filling ability, and control the electroplating rate at the center and edge of the wafer, thereby compensating for the current difference between the center and edge of the wafer to improve the terminal effect and improve the uniformity of the metal layer after wafer electroplating.

[0099] The semiconductor electroplating equipment provided by the present disclosure is introduced in detail above. The principles and implementation methods of the present disclosure are explained in detail using specific embodiments. The description of the above embodiments is only used to help understand the method and core idea of ​​the present disclosure. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present disclosure, several improvements and modifications can be made to the present disclosure, and these improvements and modifications also fall within the scope of protection of the claims of the present disclosure.

Claims

1. A semiconductor electroplating device, characterized in that: Used for electroplating metal onto a semiconductor device (101), the semiconductor electroplating equipment comprising: Chamber (1); A cathode (2) is arranged at the top of the chamber (1), and the cathode (2) is electrically connected to the semiconductor device (101); an anode (3) disposed at the bottom of the chamber (1); and A diffusion disk (4) is arranged in the chamber (1) and located between the cathode (2) and the anode (3). The diffusion disk (4) comprises a disk body (42) and a paramagnetic force generating component (41). The disk body (42) is provided with a plurality of liquid outlet holes (43). The paramagnetic force generating component (41) is configured to generate a paramagnetic force that promotes the movement of metal ions (102) from the anode (3) to the cathode (2), and the paramagnetic force located in the central area of ​​the diffusion disk (4) is greater than the paramagnetic force located in the edge area of ​​the diffusion disk (4).

2. The semiconductor electroplating equipment according to claim 1, characterized in that: The paramagnetic force generating component (41) comprises a plurality of electromagnetic coil components (410) arranged in the disk body (42), wherein the magnetic field strength generated by the electromagnetic coil components (410) located in the central area of ​​the diffusion disk (4) is greater than the magnetic field strength generated by the electromagnetic coil components (410) located in the edge area of ​​the diffusion disk (4).

3. The semiconductor electroplating equipment according to claim 2, characterized in that: The magnetic field strength of the electromagnetic coil assembly (410) is adjustable.

4. The semiconductor electroplating equipment according to claim 2, characterized in that: The electromagnetic coil assembly (410) and the disk body (42) are integrally formed, and the electromagnetic coil assembly (410) comprises a plurality of coils, wherein: The current of the coil located in the central area of ​​the diffusion disk (4) is greater than the current of the coil located in the edge area of ​​the diffusion disk (4); and / or The number of turns of the coil located in the central area of ​​the diffusion disk (4) is greater than the number of turns of the coil located in the edge area of ​​the diffusion disk (4).

5. The semiconductor electroplating equipment according to claim 2, characterized in that: The electromagnetic coil assembly (410) comprises a plurality of first coils (401), and the plurality of first coils (401) surround the hole walls of the plurality of liquid outlet holes (43) in a one-to-one correspondence.

6. The semiconductor electroplating equipment according to claim 2, characterized in that: The electromagnetic coil assembly (410) comprises a plurality of second coils (412), and the plurality of second coils (412) are arranged in a region between adjacent liquid outlet holes (43) of the disk body (42).

7. The semiconductor electroplating equipment according to claim 6, characterized in that: The electromagnetic coil assembly (410) further comprises a plurality of magnetic columns (411), and the plurality of second coils (412) surround the plurality of magnetic columns (411) in a one-to-one correspondence; and / or The plurality of liquid outlet holes (43) are arranged in an array on the disk body (42), and the magnetic column (411) is located in a central area between four adjacent liquid outlet holes (43).

8. The semiconductor electroplating equipment according to any one of claims 1 to 7, characterized in that: Also includes: A pressure plate (5) is disposed above the semiconductor device (101) and is configured to drive the semiconductor device (101) to move; and A magnetic field regulating device (6) is embedded in the pressure plate (5), and the magnetic field regulating device (6) is configured to cooperate with the paramagnetic force generating component (41) to generate a magnetic field in which the magnetic flux lines are perpendicular to the semiconductor device (101), and the magnetic field strength in the central area of ​​the semiconductor device (101) is greater than the magnetic field strength in the edge area of ​​the semiconductor device (101).

9. The semiconductor electroplating equipment according to claim 8, characterized in that: The magnetic field generated by the magnetic field regulating device (6) and the magnetic field generated by the paramagnetic force generating component (41) attract each other and have corresponding magnitudes.

10. The semiconductor electroplating equipment according to any one of claims 1 to 7, characterized in that: The semiconductor device (101) comprises a wafer.

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