Wafer uniform heating device

Abstract

The utility model discloses a wafer uniform heating device, which belongs to the technical field of semiconductor manufacturing equipment and comprises a heating cavity upper part and a heating cavity lower part, an external coating is sprayed outside the heating cavity upper part, the lower surface of the heating cavity upper part is fixedly connected with the heating cavity lower part, and the heating cavity lower part is fixedly connected with the heating cavity upper part. A heating cavity is formed between the heating cavity upper part and the heating cavity lower part. According to the wafer heating device, the heating disc is electrified for heating, the temperature measuring element is used as a temperature measuring and feedback element, when the temperature reaches a set value, the heating disc stops heating, and the temperature set value is maintained through intermittent electrification continuously, so that the uniformity of the wafer heating temperature can be improved, and the durability of the wafer heating device is prolonged; the wafer ion implantation heating disc is compact and novel in structure, reasonable in heating principle design, stable in size in the working process of the heating disc body, and capable of greatly improving the reliability and continuity of the wafer ion implantation process and improving the yield.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor manufacturing equipment, and in particular relates to a wafer uniform heating device. Background Art

[0002] Wafer heating plates are a commonly used device in semiconductor manufacturing, used to heat silicon wafers (wafers) for various process steps, such as deposition, corrosion, and ion implantation. Through an ion implanter, different ions can be implanted into the surface of the silicon wafer through a high-energy ion beam, giving it different surface properties and forming different types of electrodes or doped regions. During the ion implantation process, the wafer needs to be heated uniformly and placed in a vacuum state. Therefore, there are high requirements for the temperature uniformity of the heating device supporting the wafer. The temperature uniformity of existing wafer heating devices is difficult to guarantee, and due to the thermal expansion and contraction of the heating plate, it not only affects the ion implantation effect, but also shortens the service life.

[0003] In order to overcome the defects of the existing technology, the art urgently needs an improved heating plate structure for uniformly heating the wafer and having a longer service life to improve the reliability and stability of the wafer ion implantation process. Utility Model Content

[0004] The purpose of the utility model is to propose a wafer uniform heating device in order to solve the problem in the prior art that the heating plate itself heats unevenly and deforms during operation, resulting in uneven heating of the wafer.

[0005] In order to achieve the above purpose, the present invention adopts the following technical solutions:

[0006] A wafer uniform heating device includes an upper part of a heating chamber and a lower part of a heating chamber. The upper part of the heating chamber is sprayed with an external coating. The lower surface of the upper part of the heating chamber is fixedly connected to the lower part of the heating chamber. A heating chamber is formed between the upper part of the heating chamber and the lower part of the heating chamber. A heating plate is provided inside the heating chamber. An intermediate shaft chamber is opened in the middle of the lower part of the heating chamber. The bottom of the lower part of the heating chamber is fixedly connected to a retaining frame, and a thermocouple sensor is provided at the bottom of the retaining frame.

[0007] As a further description of the above technical solution:

[0008] There are two groups of thermocouple sensors, both of which are fixedly connected to the bottom of the retaining frame through mounting nuts, and the tops of the thermocouple sensors touch the inner wall of the intermediate shaft chamber.

[0009] As a further description of the above technical solution:

[0010] The upper surface of the heating cavity is sprayed with a thermal conductive coating.

[0011] As a further description of the above technical solution:

[0012] The lower surface of the heating cavity is sprayed with a heat-insulating coating.

[0013] As a further description of the above technical solution:

[0014] The power line of the heating disk passes through the intermediate shaft cavity and the bottom of the retaining frame and is connected to the thermocouple sensor.

[0015] In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are:

[0016] In the utility model, the heating disk is powered on for heating, and the temperature measuring element serves as a temperature measurement and feedback element. When the temperature reaches the set value, the heating of the heating disk stops, and the temperature set value is continuously maintained by intermittent power supply, which can improve the uniformity of the wafer heating temperature and extend the durability of the wafer heating device. In addition, the utility model has a compact and novel structure, a reasonable heating principle design, and a stable size of the heating disk during the working process, which can greatly improve the reliability and continuity of the wafer ion implantation process and improve the yield rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a structural schematic diagram of a wafer uniform heating device proposed by the present invention.

[0018] Legend:

[0019] 1. Heating cavity upper parts; 2. Heating plate; 3. Heating cavity lower parts; 4. Retaining frame; 5. External coating; 6. Heating cavity; 7. Thermal conductive coating; 8. Thermal insulation coating; 9. Thermocouple sensor. DETAILED DESCRIPTION

[0020] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0021] See also Figure 1The utility model provides a technical solution: a wafer uniform heating device, comprising a heating chamber upper part 1 and a heating chamber lower part 3, the outer surface of the heating chamber upper part 1 is sprayed with an external coating 5, the lower surface of the heating chamber upper part 1 is fixedly connected to the heating chamber lower part 3, a heating chamber 6 is formed between the heating chamber upper part 1 and the heating chamber lower part 3, the upper surface of the heating chamber 6 is sprayed with a thermal conductive coating 7, and the lower surface of the heating chamber 6 is sprayed with a thermal insulation coating 8;

[0022] In this embodiment, by providing the outer coating 5, the thermal insulation coating 8 and the thermal conductive coating 7, the heat generated by the heating plate 2 can be directed and the temperature can be uniformed. The upper part 1 of the heating chamber is used as a heat diffusion part and a wafer support part.

[0023] A heating plate 2 is provided inside the heating cavity 6. An intermediate shaft cavity is provided in the middle of the lower part 3 of the heating cavity. A retaining frame 4 is fixedly connected to the bottom of the lower part 3 of the heating cavity. A thermocouple sensor 9 is provided at the bottom of the retaining frame 4. The power cord of the heating plate 2 passes through the intermediate shaft cavity and the bottom of the retaining frame 4 and is connected to the thermocouple sensor 9. There are two groups of thermocouple sensors 9. Both groups of thermocouple sensors 9 are fixedly connected to the bottom of the retaining frame 4 by mounting nuts. The tops of the thermocouple sensors 9 touch the inner wall of the intermediate shaft cavity.

[0024] In this embodiment, the two sets of thermocouple sensors 9 and the holder 4 cooperate to ensure temperature measurement accuracy, and the holder 4 can ensure the accuracy of the temperature measurement position.

[0025] Working principle: When in use, the wafer to be processed is placed on the upper part 1 of the heating chamber, the heating plate 2 raises the temperature of the upper part 1 of the heating chamber to the set value according to the process requirements, the cavity outside the heating plate is heated, vacuum is drawn, ions are injected, the ion injection process ends, the heating plate and the external cavity are cooled, the pressure is restored, the ions in the cavity are removed, and finally the wafer is removed.

[0026] The above is only a preferred specific implementation method of the present invention, but the protection scope of the present invention is not limited to this. Any technician familiar with the technical field within the technical scope disclosed by the present invention can make equivalent replacements or changes based on the technical solution and utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A wafer uniform heating device, comprising an upper part (1) of a heating chamber and a lower part (3) of a heating chamber, wherein an outer coating (5) is sprayed on the upper part (1) of the heating chamber, and characterized in that: The lower surface of the upper heating cavity part (1) is fixedly connected to the lower heating cavity part (3); a heating cavity (6) is formed between the upper heating cavity part (1) and the lower heating cavity part (3); a heating plate (2) is arranged inside the heating cavity (6); an intermediate shaft chamber is opened in the middle of the lower heating cavity part (3); a retaining frame (4) is fixedly connected to the bottom of the lower heating cavity part (3); and a thermocouple sensor (9) is arranged at the bottom of the retaining frame (4).

2. A wafer uniform heating device according to claim 1, characterized in that: The number of the thermocouple sensors (9) is two groups, and the two groups of thermocouple sensors (9) are fixedly connected to the bottom of the retaining frame (4) through mounting nuts, and the tops of the thermocouple sensors (9) touch the inner wall of the intermediate shaft chamber.

3. The wafer uniform heating device according to claim 1, characterized in that: The upper surface of the heating cavity (6) is sprayed with a thermal conductive coating (7).

4. The wafer uniform heating device according to claim 1, characterized in that: The lower surface of the heating cavity (6) is sprayed with a heat insulating coating (8).

5. The wafer uniform heating device according to claim 1, characterized in that: The power line of the heating plate (2) passes through the intermediate shaft chamber and the bottom of the retaining frame (4) and is connected to the thermocouple sensor (9).

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