4results about How to "Avoid miscibility" patented technology

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

The invention provides a qualitative and quantitative analysis method for alkane organic matters in a complex matrix, which comprises the following steps: optimizing an MRM method based on a GC-QQQ optimizer, detecting a plurality of n-alkane mixed standard solutions with different concentration gradients, selecting a quantitative ion pair and a qualitative ion pair, establishing a linear regression equation based on the quantitative ion flow peak area and the concentration of each compound, and calculating the qualitative and quantitative analysis result of the alkane organic matters in the complex matrix. Taking the linear regression equation as a quantitative standard curvilinear equation of each compound, and counting the standard retention time of each compound; extracting organic matters in a liquid phase and a solid content of a to-be-detected sample into an organic phase, and circularly washing the raw material for multiple times by using an extraction solvent to obtain a to-be-detected organic phase; detecting a to-be-detected organic phase by using the optimized MRM method to obtain an ion flow peak area and retention time of the to-be-detected organic phase; and obtaining the content of each compound in the to-be-detected sample based on the ion flow peak area of the to-be-detected organic phase and the quantitative standard curve equation, and determining the nature of the compounds based on the retention time of the to-be-detected organic phase and the standard retention time.

An accompanying piece and a film coating clamp for indirectly measuring the film thickness of a wafer belong to the technical field of film thickness probe measurement. The accompanying piece is composed of a square silicon substrate and an alloy mask closely adhered with a square through hole. The surface of the film coating clamp is a spherical cap, and multiple circular grooves are arranged circumferentially for placing the wafer. A rectangular groove is arranged between adjacent grooves for placing the accompanying piece, and semicircular grooves are arranged at the midpoint of both sides of the rectangular groove to adapt to the thickness of the mask. During film coating, the accompanying piece and the wafer are deposited with a thin film at the same time, and the film thickness of the wafer is indirectly calculated by measuring the height difference of the film step on the substrate of the accompanying piece. The length-width ratio and the through hole ratio of the accompanying piece can ensure the flatness of the film step, and the flatness and roughness of the substrate and the mask ensure close adhesion. The device avoids damage caused by direct contact with the wafer, solves the problems of large film thickness measurement error of high reflection material, shielding pollution, etc., and improves the measurement accuracy and reliability.

The present invention belongs to the technical field of organic electroluminescent materials, and specifically discloses a thermally cross-linked fluorescent material based on vinyl groups and its application. In the molecular design of the thermally cross-linked heat-activated delayed fluorescent material, bis(phenylsulfonyl)benzene and 3,3'-bipyridine groups are introduced as molecular skeletons, 4-vinyl diphenylamine and 3-vinyl carbazole are used as electron-donating groups, and ethylene is used as a cross-linking group and molecular construction is performed. Cross-linking groups are introduced into the molecules, and a three-dimensional network polymer is formed after cross-linking. After cross-linking, the light-emitting layer has the characteristics of anti-solvent and thermal stability, which can avoid the light-emitting layer from being mutually dissolved with other layers, so that the light-emitting layer of OLED can be prepared by solution processing, which is of great significance to solving the corrosion problem of the upper layer solvent on the lower layer film when preparing by the multilayer solution method, and is conducive to the industrial production of large-scale OLED device preparation.