2results about How to "Avoid miscibility" patented technology

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

An accompanying piece and a film coating clamp for indirectly measuring the film thickness of a wafer belong to the technical field of film thickness probe measurement. The accompanying piece is composed of a square silicon substrate and an alloy mask closely adhered with a square through hole. The surface of the film coating clamp is a spherical cap, and multiple circular grooves are arranged circumferentially for placing the wafer. A rectangular groove is arranged between adjacent grooves for placing the accompanying piece, and semicircular grooves are arranged at the midpoint of both sides of the rectangular groove to adapt to the thickness of the mask. During film coating, the accompanying piece and the wafer are deposited with a thin film at the same time, and the film thickness of the wafer is indirectly calculated by measuring the height difference of the film step on the substrate of the accompanying piece. The length-width ratio and the through hole ratio of the accompanying piece can ensure the flatness of the film step, and the flatness and roughness of the substrate and the mask ensure close adhesion. The device avoids damage caused by direct contact with the wafer, solves the problems of large film thickness measurement error of high reflection material, shielding pollution, etc., and improves the measurement accuracy and reliability.