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Control method for Flash memory on-line programming

A programming control and memory technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as difficult positioning of entry parameters, increased programming complexity, poor program reusability, etc., to ensure stability and facilitate online programming , The effect of convenient programming

Inactive Publication Date: 2011-03-16
SUZHOU UNIV
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  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is difficult to locate the entry parameters, the reusability of the program is poor, and the programming complexity increases

Method used

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  • Control method for Flash memory on-line programming

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Embodiment 1

[0030] Embodiment one: a kind of Flash memory online programming control method, comprises the following steps:

[0031] (1) presetting the machine code of the Flash memory in the RAM to run the statement during high voltage;

[0032] (2) Follow certain timing and steps in Flash erasing or writing operations;

[0033] (3) Encapsulate Flash erase or write sub-functions;

[0034] (4) Use the well-encapsulated erase and write sub-functions described in step (3) to perform erase / write operation programming on the Flash memory.

[0035]In this embodiment, the Flash memory is exemplified by DG128 with CAN bus interface, NE64 with Ethernet interface and UF32 with USB2.0 interface in the 16-bit MCUS12 series released after Freescale 2002. The Flash of the S12 series MCU consists of several blocks (Block). Each block is divided into several sectors (Sector) or several pages (Page), each sector can be divided into several rows (Row), and each row is composed of several bytes. A sect...

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Abstract

The invention discloses an on-line programming control method of a Flash memory, comprising erasing operation and read-in operation. The method is characterized in that machine codes of operation statements and return statements of the Flash memory in the period of adding high pressure are preset in an RAM. The operation statements include the statement for writing interrupt identification in a status register so as to start a corresponding command, as well as the statement for judging the completion of a wait command; and in the processes of erasing operation and writing operation, program operation is carried out when the period of adding high pressure turns to the RAM. The invention separates the instable factors caused in the period of adding high pressure from the erasing and writingoperations of the Flash memory, and the control method has universality and convenient programming and ensures the on-line programming stability of the Flash memory.

Description

technical field [0001] The invention relates to a control method for online programming of a memory, in particular to a stability control method for online programming of a Flash memory. Background technique [0002] An ideal memory should have the characteristics of fast access speed, non-volatile, high storage density (large storage capacity per unit volume), and low price. In the prior art, common memories usually have one or more of these features. In recent years, Flash memory technology has become more mature. Flash memory has the characteristics of electrical erasability, no need for backup power to protect data, online programming, high storage density, low power consumption, and low cost. It is currently an ideal memory. . There are two programming modes of Flash memory: writer mode (or monitoring mode) and online programming mode (or user mode). Writer mode means that the host sends relevant commands to the MCU through the writer to call the erasing or writing s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
Inventor 朱巧明王宜怀刘纯平张云坤章建民
Owner SUZHOU UNIV
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