Voltage supply circuit

Abstract

The invention provides a voltage supply circuit used for supplying voltage to a memory unit. The memory unit comprises a voltage input end. The voltage supply circuit comprises a first voltage regulator, a second voltage regulator and a control unit, wherein the first voltage regulator is used for regulating reference voltage to generate working voltage when the memory unit works and stops working when the memory unit does not work; the second voltage regulator is used for regulating the reference voltage to generate standby voltage; and the control unit is used for controlling the voltage input end to receive the working voltage after the memory unit works for a preset time, or receiving the standby voltage. The voltage supply circuit has the following advantage: the problem of slow response of the memory unit caused by delay of the voltage regulators is avoided.

Description

technical field [0001] The invention relates to a voltage supply circuit, in particular to a voltage supply circuit for reading voltage of a non-volatile storage device. Background technique [0002] Storage devices often require multiple precise voltages, which are used as control voltages or reference voltage signals for reading and writing, such as programming voltages, erasing voltages, and reading voltages in flash memory (flash memory). The voltage supply circuit in the prior art generally uses a voltage regulator (regulator) to adjust the reference voltage, and generates an output voltage with a corresponding voltage value according to different operation requirements. [0003] figure 1 A schematic diagram of a connection structure between a voltage supply circuit and a storage unit 104 in the prior art is shown, which is used to provide a read voltage to the storage unit 104. The voltage supply circuit uses a voltage regulator 100 to generate a reference voltage Vre...

AI Technical Summary

Problems solved by technology

However, since the voltage regulator 100 is a feedback-type working process, it takes a delay time Td after it is activated before the output voltage Vout can change to a stable effective level.

If within the delay time Td, the memory unit 104 has completed the corresponding decoding process, but since the output voltage Vout has not yet risen to an active level, it is necessary to wait for it to stabilize before performing the read operation, so that The response speed of the read operation process of the storage unit 104 is relatively slow

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