Process method for sintering semiconductor element
A process method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, furnace components, etc., can solve problems such as low production efficiency, achieve the effect of improving the yield and output rate, and optimizing the structure of energy
Inactive Publication Date: 2012-01-04
SHANGHAI XUKANG ELECTRONICS TECH
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[0005] The object of the present invention is to provide a process method for sintering semiconductor elements to solve the problem of low production efficiency caused by resistance wire heating in the existing sintering process
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[0021] The process method for sintering semiconductor elements proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.
[0022] The core idea of the present invention is to provide a process method for sintering semiconductor elements, which directly heats the semiconductor elements through the infrared radiation tubes arranged in the furnace body of the sintering furnace, and uses infrared radiation tubes of different wavelengths to complete the drying of the semiconductor elements in sequence , pre-sintering and sintering processes, optimize the energy su...
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The invention provides a process method for sintering a semiconductor element. The process method comprises the following steps of: placing the semiconductor element on a conveying silk screen; switching on an infrared radiant tube in a sintering furnace; starting the conveying silk screen, so that the semiconductor element is conveyed into the sintering furnace through the conveying silk screen; and irradiating the semiconductor element by using the infrared radiant tube in the sintering furnace, so that processes for drying, presintering and sintering the semiconductor element are sequentially finished. By the process method for sintering the semiconductor element, the semiconductor element is directly heated by the infrared radiant tube arranged in a sintering furnace body, the processes for drying, presintering and sintering the semiconductor element are sequentially finished by infrared radiant tubes with different wavelengths, and a structure for supplying energy sources is optimized, so that the yield and the output rate of the semiconductor element are improved.
Description
technical field [0001] The invention relates to a process method for sintering semiconductor elements. Background technique [0002] With the development of analog circuit technology, semiconductor components are more and more widely used in circuit design. Among them, the sintering process in semiconductor elements plays a very important role in the entire semiconductor element manufacturing process. [0003] In the process of semiconductor element sintering process, it is very important to control the sintering temperature of the sintering furnace. The temperature of the semiconductor element and the accompanying fixture coming out of the sintering furnace mouth must be controlled below 60°, and the entire process must be sintered under gas protection. and cooling, while at the same time must remain dust-free. [0004] At present, the sintering process of semiconductor elements is realized by the traditional resistance wire heating method. Although this method can realiz...
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IPC IPC(8): H01L21/02H01L21/268F27B9/30F27D9/00
Inventor 陆利新孙逸仝韶华李桂琴
Owner SHANGHAI XUKANG ELECTRONICS TECH