Film forming apparatus

Abstract

The invention provides a film forming device capable of reducing the film quality deviation generated on the filming target position. The film forming device 1 is provided with a raw material gas supply part 30 used for providing the raw material gas (oxygen) to a vacuum chamber 10, and an active gas supply part 40 used for partially providing the active gas more active than the raw material gas to the film target object 11.By adopting the position relationship between the film target object 11 and a deposition part 2, a part of the filming target object 11, the oxygen supplied to the film can be reduced by comparing with other parts. For the above mentioned part, the active gas supply 40 can be used to supply the part with the oxygen partially, and therefore the oxygen can be provided. The deviation of the oxygen of the film of the position of the filming target object 11 can be reduced, and therefore the film quality deviation generated on the filming target position can be reduced.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2013-068577 filed on March 28, 2013. The entire contents of this Japanese application are incorporated herein by reference. technical field [0002] The invention relates to a film forming device. Background technique [0003] As a film-forming apparatus for forming a film on the surface of a film-forming object, for example, an ion plating method or a sputtering method is used. For example, Patent Document 1 describes a film-forming apparatus using an ion plating method in which evaporated film-forming material is diffused in a vacuum chamber to adhere the film-forming material to the surface of a film-forming object. In the film forming apparatus described in this patent document 1, two plasma sources for generating plasma beams and a main furnace for evaporating film forming materials by the plasma beams are provided so as to be compatible with a substrate as a film forming object. Correspo...

Images