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Solid-state image pickup device, method of manufacturing the same, and electronic apparatus

A camera device, solid-state technology, used in radiation control devices, televisions, circuits, etc., can solve problems such as color mixing

Active Publication Date: 2015-02-11
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] For example, as described in Japanese Patent Laid-Open No. 2009-65098, a back-illuminated solid-state imaging device may have a disadvantage because oblique light enters a pixel adjacent to a target pixel, which causes color mixing

Method used

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  • Solid-state image pickup device, method of manufacturing the same, and electronic apparatus
  • Solid-state image pickup device, method of manufacturing the same, and electronic apparatus
  • Solid-state image pickup device, method of manufacturing the same, and electronic apparatus

Examples

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no. 1 example

[0037] figure 1 is a schematic sectional view showing a configuration example of the solid-state imaging device 1 according to the first embodiment of the present disclosure. The solid-state imaging device 1 may be a CMOS image sensor used in electronic equipment such as digital still cameras and video cameras, and is configured such that a plurality of pixels 10 are two-dimensionally arranged in an imaging pixel region (pixel portion 110 described later). The partition structure 20 is disposed along the boundary line between the pixels 10 . Although the solid-state imaging device 1 may have either of a back-illuminated structure or a front-illuminated structure, as an illustrative example, the description is given with a solid-state imaging device having a back-illuminated structure.

[0038] The pixel 10 may include, for example, a color filter 12 and an on-chip lens 13 provided on the light incident side of the photoelectric conversion element 11 configured by a photodiode...

no. 2 example

[0074] Figure 12 is a schematic sectional view showing a configuration example of a solid-state imaging device 1A according to the second embodiment of the present disclosure. The present embodiment is configured such that the anti-reflection film 26 is provided on the upper surface 23A of the second partition layer 23 so that light from the outside is reflected by the upper surface 23A of the second partition layer 23, thereby suppressing the reflected light from being incident on the camera. Lens and so on. The solid-state imaging device 1A has the same configuration, function, and effect as the solid-state imaging device 1 according to the first embodiment described above, except for the above point.

[0075] The solid-state imaging device 1A can be manufactured, for example, in the following manner.

[0076] Figure 13 to Figure 19 is a schematic diagram showing an example of a manufacturing method of the solid-state imaging device 1A in the order of processes. First,...

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Abstract

A solid-state image pickup device, including: a plurality of pixels; a separation structure provided along a boundary line adjacent to the plurality of pixels; the separation structure includes a groove provided from a back surface of the semiconductor substrate to a depth corresponding to a wavelength, the groove being positioned along the boundary line, a first separation layer provided in the groove, and a second separation layer provided above the first separation layer and corresponding to the boundary line, the second separation layer being connected to the first separation layer; and methods including the same.

Description

technical field [0001] The present disclosure relates to a solid-state imaging device suitable for use as a back-illuminated solid-state imaging device in which light is incident on a photoelectric conversion portion from a rear surface of a semiconductor substrate, a manufacturing method thereof, and electronic equipment including the solid-state imaging device. Background technique [0002] For example, as described in Japanese Patent Laid-Open No. 2009-65098, a back-illuminated solid-state imaging device may have a disadvantage because oblique light enters a pixel adjacent to a target pixel, which causes color mixing. Accordingly, Japanese Patent Laid-Open No. 2009-65098 describes a configuration in which a shield member separating one color filter from another is buried downward in a high-concentration p+ layer on the rear surface side of a semiconductor substrate. Contents of the invention [0003] However, in the configuration described in Japanese Patent Laid-Open N...

Claims

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Application Information

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IPC IPC(8): H01L27/146H04N5/335
CPCH01L27/14607H01L27/14621H01L27/14685H01L27/1464H01L27/14645H01L27/14689H01L27/14629H01L27/1463
Inventor 蛯子芳树山本敦彦馆下八州志冈崎裕美
Owner SONY CORP