Data storage method, storage and electronic equipment

A data storage and memory technology, applied in the computer field, can solve the problems of complex memory read and write circuits, etc.

Active Publication Date: 2015-07-08
LENOVO (BEIJING) CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Embodiments of the present invention provide a data storage method and electronic equipment to solve the technical problem of complex read and write circuits of memory in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data storage method, storage and electronic equipment
  • Data storage method, storage and electronic equipment
  • Data storage method, storage and electronic equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Embodiments of the present invention provide a data storage method, a memory and an electronic device, which are used to solve the technical problem of complex read and write circuits of the memory in the prior art.

[0038] The technical solution in the embodiments of the present invention is to solve the above-mentioned technical problems, and the general idea is as follows:

[0039] A data storage method is provided, which is applied to a memory, and the memory has N physical pages, and N is a positive integer, wherein, the i-th physical page in the N physical pages is not exactly the same as the coding error rate of the N Corresponding to the i-th coding error rate, wherein, i is any integer between 1 and N, the method includes: determining M logical pages, wherein M is an integer greater than or equal to 1; The page is divided into N parts of i-th logical page data, i is any integer from 1 to M; the i-th logical page data of N parts is processed, and the i-th error...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of computer and discloses a data storage method, a storage and electronic equipment. The data storage method, storage and electronic equipment solve the technical problem of complex reading-writing circuit of a storage of the prior art. The data storage method is used for the storage, the storage has N physical pages, wherein the i physical page of the N physical pages is corresponding to the i code error rate of N not identical code error rates, wherein i is any integer of 1 to N; the data storage method includes that confirming M logic pages; dividing the i logic page of the M logic pages into N parts of data of the i logic page, wherein i is any integer of 1 to M; processing the N parts of data of the i logic page, and outputting the i error correction code corresponding to the i logic page and N parts of data of the i logic page; storing the N parts of data of the i logic page in the N physical pages in sequence, and storing the i error correction code in the N physical page of the N physical pages.

Description

technical field [0001] The invention relates to the technical field of computers, in particular to a data storage method, memory and electronic equipment. Background technique [0002] With the rapid development of electronic technology, there are more and more storage media for electronic equipment, such as: SLC (Single-Level Cell), that is: 1bit / cell, a memory storage unit (cell) stores a bit ( bit) data; MLC (Multi-Level Cell), that is: 2bit / cell, a memory storage unit (cell) stores two-bit (bit) data; TLC (Triple-Level Cell), that is: 3bit / cell, a memory storage unit (cell) stores three bits (bit) of data and so on. [0003] In TLC-3NAND Flash, due to the distribution of physical voltage and the specific correspondence between binary codes, MSB (Most Significant Bit: most significant bit), CSB (Center Significant Bit: middle significant bit), LSB (Least Significant bit: lowest Effective bit) physical pages have different voltage coverages, and the bit error rates on th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F11/10
Inventor杨碧波高长磊张传雨管慧娟
OwnerLENOVO (BEIJING) CO LTD