A data storage method, memory and electronic device

A technology of data storage and memory, which is applied in the computer field and can solve problems such as the complexity of memory read and write circuits

Active Publication Date: 2018-07-03
LENOVO (BEIJING) LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Embodiments of the present invention provide a data storage method and electronic equipment to solve the technical problem of complex read and write circuits of memory in the prior art

Method used

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  • A data storage method, memory and electronic device
  • A data storage method, memory and electronic device
  • A data storage method, memory and electronic device

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Embodiment Construction

[0037] Embodiments of the present invention provide a data storage method, a memory and an electronic device, which are used to solve the technical problem of complex read and write circuits of the memory in the prior art.

[0038] The technical solution in the embodiments of the present invention is to solve the above-mentioned technical problems, and the general idea is as follows:

[0039] A data storage method is provided, which is applied to a memory, and the memory has N physical pages, and N is a positive integer, wherein, the i-th physical page in the N physical pages is not exactly the same as the coding error rate of the N Corresponding to the i-th coding error rate, wherein, i is any integer between 1 and N, the method includes: determining M logical pages, wherein M is an integer greater than or equal to 1; The page is divided into N parts of i-th logical page data, i is any integer from 1 to M; the i-th logical page data of N parts is processed, and the i-th error...

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Abstract

The invention relates to the field of computer technology, and discloses a data storage method, memory and electronic equipment to solve the technical problem of complex memory read and write circuits in the prior art. The method is applied to a memory, and the memory has N physical pages, wherein , the i-th physical page in the N physical pages corresponds to the i-th coding error rate among the N not identical coding error rates, where i is any integer between 1 and N, characterized in that the The method includes: determining M logical pages; dividing the i-th logical page of the M logical pages into N parts of i-th logical page data, where i is any integer from 1 to M; for the i-th logical page in N parts The data is processed, and the i-th error correction code corresponding to the i-th logical page and the i-th logical page data of the N part are output; the i-th logical page data of the N part is sequentially stored in the N physical pages, and the i-th An error correction code is stored on the Nth physical page of the N physical pages.

Description

technical field [0001] The invention relates to the technical field of computers, in particular to a data storage method, memory and electronic equipment. Background technique [0002] With the rapid development of electronic technology, there are more and more storage media for electronic equipment, such as: SLC (Single-Level Cell), that is: 1bit / cell, a memory storage unit (cell) stores a bit ( bit) data; MLC (Multi-Level Cell), that is: 2bit / cell, one memory storage unit (cell) stores two-bit (bit) data; TLC (Triple-Level Cell), that is: 3bit / cell, a memory storage unit (cell) stores three-bit (bit) data and so on. [0003] In TLC-3NAND Flash, due to the distribution of physical voltage and the specific correspondence between binary codes, MSB (Most Significant Bit: Most Significant Bit), CSB (Center Significant Bit: Middle Significant Bit), LSB (Least Significant Bit: Lowest Effective bit) physical pages have different voltage coverages, and the bit error rates thereon...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G06F11/10
Inventor杨碧波高长磊张传雨管慧娟
OwnerLENOVO (BEIJING) LTD