Nitrogen heating device for vacuum dry pump under strict semiconductor process environment

Abstract

The invention relates to a nitrogen heating device for a vacuum dry pump under a strict semiconductor process environment. An inner gas pipeline is mounted in an outer shell. One end of the inner gas pipeline is provided with a gas inlet penetrating out of the outer shell. The periphery of the inner gas pipeline is provided with a heat insulation layer mounted in the outer shell. The heat insulation layer is filled with double spiral heating pipes wound on the periphery of the inner gas pipeline. One ends of the double spiral heating pipes penetrate out of the outer shell to be separately connected with connection terminals. The inner gas pipeline is internally provided with a plurality of sequentially embedded gas pipeline bodies. One end of each gas pipeline body is mounted on the adjacent outer-layer gas pipeline body, and a gap is reserved between the other end of each gas pipeline body and the same end of the adjacent outer-layer gas pipeline body. The gas pipeline body located on the outermost layer is mounted on the inner gas pipeline. The gas pipeline body located on the innermost layer is mounted on the outer shell, and one end of the gas pipeline body outwards penetrates out of the outer shell to serve as a gas outlet. A fold-back gas circuit is formed among all the gas pipeline bodies. The nitrogen heating device has the characteristics of being high in heating efficiency and good in uniformity.

Description

technical field [0001] The invention belongs to the field of severe semiconductor technology, in particular to a vacuum dry pump nitrogen heating device under the harsh semiconductor technology environment. Background technique [0002] Some harsh semiconductor processes such as LPCVD (Low Pressure Chemical Vapor Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), etc., are characterized by a large amount of dust and are often highly corrosive. These dusts are mainly caused by the fact that the reaction medium will gradually cool during the process of being pumped from the chamber to the vacuum pump, and gradually change from the gas phase to the solid phase. The pumping speed drops, and in severe cases, the vacuum dry pump is stuck; dust adheres to the components, corrodes key components such as shaft seals, and will cause serious failures such as oil leakage, severe gear wear, and gluing. These will seriously affect the service life of the pump, and then stop ...

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