Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Data read-write method of Flash memory and device, medium and equipment

A data reading and writing, memory technology, applied in the field of information processing, can solve problems affecting the normal operation of the program, data inconsistency, data writing failure, etc., to avoid data reading failure and ensure normal operation

Pending Publication Date: 2019-11-05
汉纳森(厦门)数据股份有限公司
View PDF7 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the related technology of reading and writing of Flash memory, when reading and writing data to Flash memory, if there are bad blocks in Flash memory, data writing will often fail, or the data read and written data will be inconsistent. , thereby affecting the normal operation of the entire program

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data read-write method of Flash memory and device, medium and equipment
  • Data read-write method of Flash memory and device, medium and equipment
  • Data read-write method of Flash memory and device, medium and equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033]Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0034] In the relevant technology of Flash memory reading and writing, when there is a bad block in the Flash memory, it is easy to cause data reading and writing failure, and then affect the normal operation of the program; according to the data reading and writing method of the Flash memory in the embodiment of the present invention, it can be When entering data, judge whether the sector is abnormal, and when the sector is abnormal, record the information of the abnormal sector, and write and read data according to the record, so...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a data read-write method and device, medium and equipment for a Flash memory, and the method comprises the steps: judging whether a current to-be-written sector of the Flash memory is abnormal or not when data is written into the Flash memory; if the current to-be-written sector is abnormal, marking the current to-be-written sector as an abnormal sector, recording information of the abnormal sector, and skipping the abnormal sector to perform writing operation so as to write to-be-written data into a normal sector; when the data stored in the Flash memory is read, skipping the abnormal sector according to the recorded information of the abnormal sector to carry out reading operation so as to read the data from the normal sector. Under the condition that bad blocks appear in the Flash memory, data reading failure caused by the bad blocks can be avoided, and normal operation of a program is guaranteed.

Description

technical field [0001] The invention relates to the technical field of information processing, in particular to a data reading and writing method, medium, equipment and device of a Flash memory. Background technique [0002] Flash memory is a kind of non-volatile memory, which can keep data for a long time without current supply. Its storage characteristics are equivalent to hard disks. This characteristic makes it a storage medium for various portable digital devices. [0003] In the related technology of reading and writing of Flash memory, when reading and writing data to Flash memory, if there are bad blocks in Flash memory, data writing will often fail, or the data read and written data will be inconsistent. , thereby affecting the normal operation of the entire program. Contents of the invention [0004] The present invention aims to solve one of the technical problems in the above-mentioned technologies at least to a certain extent. For this reason, an object of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F13/16
CPCG06F3/0604G06F3/0614G06F13/1668G06F3/0679G06F3/0665G06F3/0644
Inventor 姚庆瑞曾志华胡伟耀
Owner 汉纳森(厦门)数据股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com