Semiconductor device

A technology of semiconductors and heat conduction sheets, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., and can solve problems such as increased thermal resistance, low thermal conductivity, and inability to dissipate heat from chips

Pending Publication Date: 2022-01-07
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] If the heat conduction layer is not provided, an air layer with low thermal conductivity will be formed due to unevenness on the contact surface between the semiconductor module and the cooler, and the heat generated by the chip cannot be dissipated.
Therefore, a heat conduction layer such as grease is usually used, but as the operating temperature Tjmax of the power semiconductor element rises, the outflow or pumping of grease occurs during the ΔTjP / C and ΔTcP / C tests, and the thermal resistance may increase.

Method used

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  • Semiconductor device
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Examples

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Effect test

Embodiment Construction

[0072] Hereinafter, embodiments of the semiconductor device of the present invention will be described with reference to the drawings.

[0073] figure 1 A cross-sectional view showing a semiconductor device 100 according to an embodiment of the present invention. First, the semiconductor module 10 is mainly composed of the semiconductor element 1, the wiring board 2, the semiconductor package 6A, the semiconductor package 6B, the sealing portion 11, and the like.

[0074] Here, the semiconductor module 6A is a part constituted by a multilayer substrate 5A and at least one semiconductor element 1 (may also include wiring such as pins 4 ) mounted on the multilayer substrate 5A. In addition, the semiconductor module 6B is a part constituted by the multilayer substrate 5B and at least one semiconductor element 1 mounted on the multilayer substrate 5B.

[0075] The semiconductor module 10 has at least one semiconductor module 6A, 6B, which is connected to the wiring board 2, res...

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Abstract

The invention provides a semiconductor device. The semiconductor device (100) includes a semiconductor module (10) having a wiring board (2), semiconductor assemblies (6A, 6B) that include a multilayer substrate (5A, 5B) on which semiconductor elements are mounted, and a sealing part (11); a cooler (30); and a heat conduction sheet (20) which is placed between the semiconductor module (10) and the mounting surface of the cooler (30) and is in contact with the bottom surfaces of the multilayer substrates (5A, 5B). The heat conduction sheet (20) has recesses (20a, 20b) corresponding to at least parts of the outer edges of second electrically conductive plates (53) provided on the bottoms of the multilayer substrates (5A, 5B).

Description

technical field [0001] The present invention relates to a semiconductor device having a heat transfer sheet disposed between a semiconductor module and a cooler. Background technique [0002] Power semiconductor modules used as switching devices for power conversion may be adversely affected by heat generated by power semiconductor elements and the like. In order to prevent this from happening, heat conduction layers for heat dissipation, coolers, etc. are used on power semiconductors. [0003] For example, the heat generated when the power semiconductors of the power semiconductor module are in operation is transferred to the cooler through the heat conduction layer between the power semiconductor module and the cooler (radiation fin), thereby cooling the power semiconductor elements that generate heat. [0004] If the heat conduction layer is not provided, since the contact surface between the semiconductor module and the cooler has unevenness, an air layer with low therm...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/31
CPCH01L23/367H01L23/3738H01L23/3121H01L23/4006H01L23/3735H01L23/36H01L23/373H01L23/5385H01L2224/32225H01L2924/3511H01L2924/10253H01L2924/10272H01L2924/1033H01L2224/45124H01L2224/04042H01L2224/05647H01L2224/48247H01L2224/48227H01L2224/73265H01L2224/291H01L24/29H01L24/32H01L24/45H01L24/48H01L24/73H01L23/562H01L25/072H01L2924/00014H01L2924/00012H01L2924/014H01L25/0655H01L23/49822H01L23/49811H01L2023/4068H01L2023/4087H01L23/49838
Inventor加藤辽一浅井竜彦白田健人
OwnerFUJI ELECTRIC CO LTD