Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
a processing apparatus and semiconductor technology, applied in the direction of liquid surface applicators, coatings, chemical vapor deposition coatings, etc., can solve the problems of misalignment of wafers and wafers, and achieve high step coverage and high productivity
Active Publication Date: 2015-06-04
KOKUSA ELECTRIC CO LTD
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- Description
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Benefits of technology
The patent aims to provide a substrate processing apparatus that can create thin films with high step coverage in a groove while maintaining high productivity. The invention also includes a method of manufacturing semiconductor devices and a computer-readable recording medium.
Problems solved by technology
However, the wafer is lifted due to the difference between the pressures applied to the back side and the surface of the wafer, thereby causing misalignment of the wafer.
Although pressure control may be performed such that the same pressure is applied to the surface and the back side of the wafer so as to prevent misalignment of the wafer, the pressure sharply changes when supply of a gas is switched to supply of another gas, thereby causing misalignment of the wafer.
Method used
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Embodiment Construction
[0024]Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
[0025](1) Structure of Substrate Processing Apparatus
[0026]First, a substrate processing apparatus according to an embodiment of the present invention will be described.
[0027]A substrate processing apparatus 100 according to an embodiment of the present invention will be described below. The substrate processing apparatus 100 is an apparatus for forming a thin film on a substrate 200, and is configured as a single-wafer type substrate processing apparatus as illustrated in FIG. 1.
[0028]As illustrated in FIG. 1, the substrate processing apparatus 100 includes a processing container 202. The processing container 202 is configured, for example, as a flat airtight container having a circular cross-section. Also, sidewalls or a lower wall of the processing container 202 is formed of a metal material, e.g., aluminum (Al) or stainless steel (steel-use-stainless (SUS)).
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Abstract
Provided is a substrate processing apparatus including a substrate processing chamber configured to process a substrate; a gas supply unit configured to alternately supply a first processing gas and a second processing gas to the substrate when processing the substrate; a substrate support unit including a support mechanism configured to support a portion of a back side of the substrate and a support unit configured to support the support mechanism; a heating unit configured to heat the substrate from the back side thereof; a standby chamber configured to accommodate the substrate support unit in standby position; and a control unit configured to control at least one of the gas supply unit and a gas exhaust unit in a manner that an inner pressure of the substrate processing chamber is higher than that of the standby chamber.
Description
CROSS-REFERENCE TO RELATED PATENT APPLICATION[0001]This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 of Japanese Patent Application No. 2013-248057, filed on Nov. 29, 2013, in the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device and a non-transitory computer-readable recording medium.[0004]2. Description of the Related Art[0005]In general, a single-wafer type substrate processing apparatus used in a semiconductor device manufacturing process uses a resistance-heating heater as a wafer heating means to process a wafer (a substrate). However, when the resistance-heating heater is used, heat is transferred from, for example, an interface between the resistance-heating heater and a wafer in a reduced-pressure state, and it thus takes a co...
Claims
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IPC IPC(8): H01L21/768C23C16/455C23C16/458C23C16/52C23C16/46
CPCH01L21/76838C23C16/52C23C16/455C23C16/458C23C16/46C23C16/4412C23C16/45519C23C16/45557C23C16/4583C23C16/481
InventorSATO, TAKETOSHIHIRAMATSU, HIROAKIHIROCHI, YUKITOMO
OwnerKOKUSA ELECTRIC CO LTD