Light emitting diode having well and/or barrier layers with superlattice structure

a technology of superlattice structure and light-emitting diodes, which is applied in the direction of semiconductor devices, lasers, semiconductor lasers, etc., can solve the problems of reducing light efficiency, cracking or warpage of semiconductor layers, and reducing light efficiency, so as to reduce strain

Inactive Publication Date: 2016-12-29
SEOUL VIOSYS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The superlattice structure effectively reduces crystal defects and surface roughness, enhancing light efficiency and allowing for improved emission in the near-ultraviolet region by controlling In content in the well and barrier layers.

Problems solved by technology

However, if a Group-III-element nitride semiconductor layer is grown on the different-type substrate 11, a crack or warpage occurs in the semiconductor layer and dislocation is produced due to the difference of lattice constants and thermal expansion coefficients between the semiconductor layer and the substrate.
Such lattice mismatch between the layers causes pin holes, surface roughness and the like, and degrades crystal quality of the well layer, is thereby restricting the light efficiency.

Method used

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  • Light emitting diode having well and/or barrier layers with superlattice structure
  • Light emitting diode having well and/or barrier layers with superlattice structure
  • Light emitting diode having well and/or barrier layers with superlattice structure

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Embodiment Construction

[0036]Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Throughout the specification, like reference numerals denote like elements having the same or similar functions. Detailed description of components or functions apparent to those skilled in the art will be omitted for clarity. It should be understood that the following exemplary embodiments are provided by way of example and that the present disclosure is not limited to the embodiments disclosed herein and can be implemented in different forms by those skilled in the art.

[0037]In the accompanying figures, the size and relative sizes of layers, films, panels, regions, etc., may be exaggerated for clarity and descriptive purposes. Also, like reference numerals denote like elements.

[0038]When an element or layer is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may be directly on, connected to, or coupled to ...

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Abstract

A light emitting diode includes an N-type GaN-based semiconductor compound layer, a P-type GaN-based semiconductor compound layer, and an active region disposed between the P-type and N-type layers, the active region comprising alternately laminated well layers and barrier layers. The well layers comprise AlxInyGa1−(x+y)N, where 0≦x, y≦1, the barrier layers comprise AlxInyGa1−(x+y)N, where 0≦x, y≦1, and at least one of the barrier layers comprises first and second layers having different compositions.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a Continuation of U.S. patent application Ser. No. 12 / 057,842, filed on Mar. 28, 2008, and claims priority from and the benefit of Korean Patent Application No. 10-2007-0030872, filed on Mar. 29, 2007, and Korean Patent Application No. 10-2007-0032010, filed on Mar. 30, 2007, which are hereby incorporated by reference for all purposes as if fully set forth herein.BACKGROUND OF THE INVENTION[0002]Field of the Invention[0003]The present invention relates to a light emitting diode, and more particularly, to a light emitting diode having well and / or barrier layers with a superlattice structure.[0004]Description of the Related Art[0005]In general, since Group-III-element nitrides, such as GaN, AlN and InGaN, have an excellent thermal stability and a direct-transition-type energy band structure, they have recently come into the spotlight as materials for light emitting diodes (LEDs) in blue and ultraviolet regions. Particula...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L33/06H01L33/32
CPCH01L33/32H01L33/06B82Y20/00H01L33/12H01S5/34333
InventorCHOI, JOO WONLEE, DONG SUNKIM, GYU BEOMLEE, SANG JOON
OwnerSEOUL VIOSYS CO LTD