Method for preparing ternary-component AlxGaI-xN nanocone

Abstract

The invention relates to a method for preparing ternary-component AlxGaI-xN nanocone, realizing control in the full-ingredient range (x is larger than 0 and smaller than 1). The method for preparing the ternary-component AlxGaI-xN nanocone comprises the following steps of: making anhydrous GaCl3 as a gallium source and anhydrous AlCl3 as an aluminum source with a nitrogen source by adopting a chemical vapor deposition method under the condition that the evaporation temperatures of GaCl3 and AlCl3 are respectively 70-90 DEG C and 130-150 DEG C to generate single-phase AlxGaI-xN nanocone, wherein x is larger than 0 and smaller than 1, the preferred nitrogen source is NH3, and the deposition temperature is 650-800 DEG C. In the invention, the vapor partial pressure of reaction precursors GaCl3 and AlCl3 is finely controlled in a tube furnace of a three-segment temperature area to obtain a one-dimensional nano material with a single-crystal structure and uniformly distributed components, and the atom ratio of Al / Ga can be controlled in the full-ingredient range (x is larger than 0 and smaller than 1) by changing growth conditions.

Description

technical field

[0001] The invention relates to a method for preparing ternary component Al x Ga 1-x N nanocone method. Background technique

[0002] Group III nitrides represented by GaN (AlN, GaN, InN and their multiple alloys) are characterized by their wide bandgap and excellent physical and chemical properties (such as high melting point, high electron saturation migration velocity, high breakdown electric field, high thermal conductivity, low Thermal expansion coefficient, high chemical stability, large piezoelectric coefficient, etc.), become the third-generation semiconductor material, and have been successfully applied in high-temperature and high-power electronic devices and optoelectronic devices (such as field effect transistors, light-emitting diodes, laser diodes, etc.) ( F. A. Ponce et al. , Nature 1997, 386 , 351-359; S. N. Mohammad et al. , Prog. Quantum Electron. 1996, 20 , 361-525; O. Ambacher, J. Phys. D: Appl. Phys. 1998, 31 , 2653-2710; P...

Examples

Embodiment 1

[0034] Example 1 anhydrous GaCl 3 and anhydrous AlCl 3 Preparation of single-phase Al for precursor deposition x Ga 1-x N nanocone arrays.

[0035] 0.4 g anhydrous GaCl 3 and anhydrous AlCl 3 respectively placed in the three-section temperature zone tube furnace (as attached figure 1 ) of the low temperature zones (I) and (II), the substrate is placed in the deposition zone (III). The system was repeatedly evacuated by a mechanical pump and filled with Ar gas three times before heating to remove oxygen and water in the reaction system. Under the protection of Ar gas, the temperature of the deposition zone was raised to 700°C (the heating rate was 10°C / min), and the temperature of the low-temperature zone (I) and (II) was rapidly (about 10 minutes) raised to 80°C (GaCl 3 evaporation temperature) and 140°C (AlCl 3 evaporation temperature). When the temperature rises to the specified value, increase the Ar gas flow to 300 mL / min, and feed NH 3 20 mL / min, GaCl 3 a...

Embodiment 2

[0036] Example 2 Single-phase Al with tunable composition x Ga 1-x Fabrication of N nanocone arrays.

[0037] Similar to the operation steps in Example 1, this example is by changing the precursor GaCl 3 and AlCl 3 The evaporation temperature of GaCl can be tuned 3 and AlCl 3 Vapor partial pressure of , thus achieving single-phase Al x Ga 1-x Fabrication of N nanocone arrays and their composition modulation. In order to obtain single-phase Al x Ga 1-x N nanocones, GaCl 3 and AlCl 3 The vapor partial pressures must match each other. The optimized reaction condition of the present invention is: GaCl 3 and AlCl 3 The evaporation temperatures are 70-90°C and 130-150°C, respectively. In this temperature range, according to AlCl 3 In order of gradual increase of the vapor partial pressure, the system modulates the GaCl 3 and AlCl 3 The vapor partial pressure of the series Al can be obtained x Ga 1-x N samples. The characterization results show that the obtain...

Embodiment 3

[0040] Example 3 anhydrous GaCl 3 GaN nanowire arrays were fabricated for precursor deposition.

[0041] Anhydrous GaCl 3 The powder is placed in a three-stage temperature zone tube furnace (as attached figure 1 ), the substrate is placed in the deposition area. The system was repeatedly evacuated by a mechanical pump and filled with Ar gas three times before heating to remove oxygen and water in the reaction system. Under the protection of Ar gas, the temperature of the deposition area was raised to 700°C (the heating rate was 10°C / min), and at the same time, the temperature of the low temperature area was rapidly (about 10 minutes) raised to 80°C. When the temperature rises to the specified value, increase the Ar gas flow to 300 mL / min, and feed NH 3 20 mL / min, GaCl 3 Vapor is carried by Ar gas to the deposition area and NH 3 Gas reaction, deposition on the substrate to obtain GaN products. The reaction time is 2-4 hours. After the reaction, the system is cooled...

technical field

[0001] The invention relates to a method for preparing ternary component Al x Ga 1-x N nanocone method. Background technique

[0002] Group III nitrides represented by GaN (AlN, GaN, InN and their multiple alloys) are characterized by their wide bandgap and excellent physical and chemical properties (such as high melting point, high electron saturation migration velocity, high breakdown electric field, high thermal conductivity, low Thermal expansion coefficient, high chemical stability, large piezoelectric coefficient, etc.), become the third-generation semiconductor material, and have been successfully applied in high-temperature and high-power electronic devices and optoelectronic devices (such as field effect transistors, light-emitting diodes, laser diodes, etc.) ( F. A. Ponce et al. , Nature 1997, 386 , 351-359; S. N. Mohammad et al. , Prog. Quantum Electron. 1996, 20 , 361-525; O. Ambacher, J. Phys. D: Appl. Phys. 1998, 31 , 2653-2710; P...

Examples

Embodiment 1

[0034] Example 1 anhydrous GaCl 3 and anhydrous AlCl 3 Preparation of single-phase Al for precursor deposition x Ga 1-x N nanocone arrays.

[0035] 0.4 g anhydrous GaCl 3 and anhydrous AlCl 3 respectively placed in the three-section temperature zone tube furnace (as attached figure 1 ) of the low temperature zones (I) and (II), the substrate is placed in the deposition zone (III). The system was repeatedly evacuated by a mechanical pump and filled with Ar gas three times before heating to remove oxygen and water in the reaction system. Under the protection of Ar gas, the temperature of the deposition zone was raised to 700°C (the heating rate was 10°C / min), and the temperature of the low-temperature zone (I) and (II) was rapidly (about 10 minutes) raised to 80°C (GaCl 3 evaporation temperature) and 140°C (AlCl 3 evaporation temperature). When the temperature rises to the specified value, increase the Ar gas flow to 300 mL / min, and feed NH 3 20 mL / min, GaCl 3 a...

Embodiment 2

[0036] Example 2 Single-phase Al with tunable composition x Ga 1-x Fabrication of N nanocone arrays.

[0037] Similar to the operation steps in Example 1, this example is by changing the precursor GaCl 3 and AlCl 3 The evaporation temperature of GaCl can be tuned 3 and AlCl 3 Vapor partial pressure of , thus achieving single-phase Al x Ga 1-x Fabrication of N nanocone arrays and their composition modulation. In order to obtain single-phase Al x Ga 1-x N nanocones, GaCl 3 and AlCl 3 The vapor partial pressures must match each other. The optimized reaction condition of the present invention is: GaCl 3 and AlCl 3 The evaporation temperatures are 70-90°C and 130-150°C, respectively. In this temperature range, according to AlCl 3 In order of gradual increase of the vapor partial pressure, the system modulates the GaCl 3 and AlCl 3 The vapor partial pressure of the series Al can be obtained x Ga 1-x N samples. The characterization results show that the obtain...

Embodiment 3

[0040] Example 3 anhydrous GaCl 3 GaN nanowire arrays were fabricated for precursor deposition.

[0041] Anhydrous GaCl 3 The powder is placed in a three-stage temperature zone tube furnace (as attached figure 1 ), the substrate is placed in the deposition area. The system was repeatedly evacuated by a mechanical pump and filled with Ar gas three times before heating to remove oxygen and water in the reaction system. Under the protection of Ar gas, the temperature of the deposition area was raised to 700°C (the heating rate was 10°C / min), and at the same time, the temperature of the low temperature area was rapidly (about 10 minutes) raised to 80°C. When the temperature rises to the specified value, increase the Ar gas flow to 300 mL / min, and feed NH 3 20 mL / min, GaCl 3 Vapor is carried by Ar gas to the deposition area and NH 3 Gas reaction, deposition on the substrate to obtain GaN products. The reaction time is 2-4 hours. After the reaction, the system is cooled...

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