Rectangular laser generating device for high-power dual-wavelength semi-conductor

A laser generation and dual-wavelength technology, which is applied in the direction of semiconductor lasers, lasers, phonon exciters, etc., can solve the problems that the output power is difficult to increase, light and heat return transmission, damage, and the output power of semiconductor lasers is difficult to further increase.

CN102545033AInactive Publication Date: 2012-07-04宁波钿元激光科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2012-07-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a rectangular laser generating device for a high-power dual-wavelength semi-conductor, which comprises an A stack (1), an A shaping lens (11), a B stack (2), a B shaping lens (21), a coupling mirror (3), a shaping lens (4), a reflection focusing mirror (5), an air inlet (6), an optical shutter (7), and a shielding box (8). According to the invention, the coupling mirror isadopted to stack two laser beams so as to improve the output power of the laser; the shielding box is used for insulating the internal environment and the external environment; the positive pressure air is input from the air inlet to prevent the external dust from invasion and the devices in the box is subjected to air cooling; the counter back pass of the external diffused photo thermal can be cut off by the action of the optical shutter diaphragm; the reflection focusing mirror is used for absorbing the photo thermal passing backing along the optical path in a counter manner, and the photo thermal is subjected to cooling; and through the coupling stacking, sealing isolating, diaphragm countersealing, reflection heat absorption and positive pressure air cooling, the output power of the semi-conductor laser generator is improved, so the purposes of dust encroachment separation, and back pass and per se photo-thermal damage prevention are achieved.
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Description

technical field

[0001] The invention relates to a semiconductor laser generator, specifically a high-power dual-wavelength semiconductor rectangular laser generator that couples and superimposes two beams of power semiconductor lasers of different wavelengths to form a beam of high-power dual-wavelength laser for industrial laser processing. device. Background technique

[0002] Power semiconductor lasers generate laser beams by accumulating energy in the form of stacks, and obtain single-wavelength power laser beams by shaping and focusing the laser beams through lenses. Semiconductor lasers have the characteristics of small size and light weight; the existing technology is used in industrial lasers The high-power laser for processing is usually provided by a large and heavy high-power gas laser. This is because the semiconductor laser is limited by the power of the semiconductor laser chip, and the output power of the semiconductor laser is difficult to further increase; i...

Examples

Embodiment Construction

[0026] refer to figure 1 , a high-power dual-wavelength semiconductor rectangular laser generating device of the present invention, comprising A stack 1, A shaping lens 11, B stack 2, B shaping lens 21, coupling mirror 3, shaping lens 4, reflective focusing mirror 5, air inlet 6. Optical shutter 7, shielding box 8, wherein: the shielding box 8 is a metal rectangular hollow box with a cover; the shielding box 8 is provided with an air inlet 6, and the air inlet 6 is located at the The bottom is connected to the fan output port of the peripheral air purification device; the side wall of the shielding box 8 is provided with a window for laser output called a light gate;

[0027] The A stack 1 is a laser generating element composed of a semiconductor laser chip array; the laser wavelength output by the A stack 1 is 940nm, the output power is 2700W, and the cross section is cylindrical; the direction axis of the laser light emitted by the A stack 1 is called A optical axis;

[00...