Field effect organic solar cell and preparation method thereof

Abstract

The invention relates to the field of photovoltaic technology, and provides a preparation method of a field effect organic solar cell. The preparation method comprises the steps of a first step, respectively etching an anode electrode, a cathode electrode and a gate electrode on a substrate, wherein the gate electrode is independent from the anode electrode and the cathode electrode and is connected with at least one edge of the substrate; a second step, growing a dielectric layer on the gate electrode according to an atomic layer deposition method; a third step, growing an anode material on the dielectric layer in an in-situ growth manner through a gas phase polymerization method, and then etching the anode material for forming a net-shaped anode layer with a plurality of through holes; a fourth step, forming an active layer on the net-shaped anode layer and performing annealing processing, wherein the active layer is connected with the dielectric layer through the through holes; and a fifth step, forming a cathode layer on the active layer. According to the preparation method of the field effect organic solar cell, an electric field in a gated voltage regulator is applied for improving carrier separation, transportation and collection efficiencies and reducing carrier combination, thereby simultaneously enlarging a Voc number, a Jsc number and an FF number.

Description

technical field

[0001] The invention relates to the technical field of photovoltaic devices such as solar cells, in particular to a field-effect solar electrode and a preparation method thereof. Background technique

[0002] Organic solar cells have the advantages of flexibility, low cost, and large-area preparation. They have huge market prospects and have become a hot spot for academic research and industrial development. From the perspective of practical application, the photoelectric conversion efficiency of laboratory organic solar cells needs to reach at least 10%, and the life span of more than 7 years is possible to try mass production and commercial application. In recent years, the improvement of the efficiency of organic solar cells has achieved very encouraging results. Several research groups have reported >8% efficiency. In 2012, some groups have reached the device efficiency threshold of 10%. From a research point of view, thermodynamic theory analysis bel...

Examples

Embodiment 1

[0031] Existing field-effect organic solar cells, such as figure 1 As shown, the anode electrode 220 , cathode electrode 230 and gate electrode 240 etched on the substrate 210 are included. The gate electrode 240 is generally located at the center of the substrate 210 . This structure is not conducive to the open circuit voltage V oc , short-circuit current J sc and an increase in fill factor FF.

[0032] This embodiment provides a field effect organic solar cell, such as figure 2 As shown, it includes an anode electrode 120 etched on the substrate, a cathode electrode 130 and a gate electrode 140, wherein the gate electrode 140 is an improvement on the gate electrode 240 of the prior art, in order to distinguish it from the existing gate electrode 240, The present invention is named "gate electrode". Thus, the solar cell of the present invention comprises from bottom to top: substrate 110 etched with anode electrode 120 and cathode electrode 130 , dielectric layer 150 ,...

Embodiment 2

[0048] The difference between this embodiment and Embodiment 1 is that each electrode pattern is prepared on the substrate by photolithography. Then use HCl and Zn powder to perform wet etching on the place not protected by photoresist. Alternatively, argon ion beam etching (IBE) is used to perform dry etching on the substrate without photoresist protection. An 80nm-thick Al2O3 is grown on the pair of gate electrodes by atomic deposition as the dielectric layer of the device. The PEDOT films grown on other substrates were peeled off and transferred onto the dielectric layer in ethanol.

[0049] Other procedures are identical with embodiment 1.

Embodiment 3

[0051] The difference between this embodiment and Embodiment 1 is that each electrode pattern is etched out with the aid of a mask plate by argon ion beam etching (IBE). Spin-coat 800 nm thick polyimide (PI) on the gate electrode pair as the dielectric layer of the device. A grid pattern is etched on the dielectric layer by photolithography, and then a layer of ITO electrode material with a thickness of 200 nanometers is sputtered to prepare a grid anode layer.

[0052] Other procedures are identical with embodiment 1.

technical field

[0001] The invention relates to the technical field of photovoltaic devices such as solar cells, in particular to a field-effect solar electrode and a preparation method thereof. Background technique

[0002] Organic solar cells have the advantages of flexibility, low cost, and large-area preparation. They have huge market prospects and have become a hot spot for academic research and industrial development. From the perspective of practical application, the photoelectric conversion efficiency of laboratory organic solar cells needs to reach at least 10%, and the life span of more than 7 years is possible to try mass production and commercial application. In recent years, the improvement of the efficiency of organic solar cells has achieved very encouraging results. Several research groups have reported >8% efficiency. In 2012, some groups have reached the device efficiency threshold of 10%. From a research point of view, thermodynamic theory analysis bel...

Examples

Embodiment 1

[0031] Existing field-effect organic solar cells, such as figure 1 As shown, the anode electrode 220 , cathode electrode 230 and gate electrode 240 etched on the substrate 210 are included. The gate electrode 240 is generally located at the center of the substrate 210 . This structure is not conducive to the open circuit voltage V oc , short-circuit current J sc and an increase in fill factor FF.

[0032] This embodiment provides a field effect organic solar cell, such as figure 2 As shown, it includes an anode electrode 120 etched on the substrate, a cathode electrode 130 and a gate electrode 140, wherein the gate electrode 140 is an improvement on the gate electrode 240 of the prior art, in order to distinguish it from the existing gate electrode 240, The present invention is named "gate electrode". Thus, the solar cell of the present invention comprises from bottom to top: substrate 110 etched with anode electrode 120 and cathode electrode 130 , dielectric layer 150 ,...

Embodiment 2

[0048] The difference between this embodiment and Embodiment 1 is that each electrode pattern is prepared on the substrate by photolithography. Then use HCl and Zn powder to perform wet etching on the place not protected by photoresist. Alternatively, argon ion beam etching (IBE) is used to perform dry etching on the substrate without photoresist protection. An 80nm-thick Al2O3 is grown on the pair of gate electrodes by atomic deposition as the dielectric layer of the device. The PEDOT films grown on other substrates were peeled off and transferred onto the dielectric layer in ethanol.

[0049] Other procedures are identical with embodiment 1.

Embodiment 3

[0051] The difference between this embodiment and Embodiment 1 is that each electrode pattern is etched out with the aid of a mask plate by argon ion beam etching (IBE). Spin-coat 800 nm thick polyimide (PI) on the gate electrode pair as the dielectric layer of the device. A grid pattern is etched on the dielectric layer by photolithography, and then a layer of ITO electrode material with a thickness of 200 nanometers is sputtered to prepare a grid anode layer.

[0052] Other procedures are identical with embodiment 1.

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