A kind of field effect organic solar cell and preparation method thereof

Abstract

The present invention relates to the field of photovoltaic technology, and provides a method for preparing a field-effect organic solar cell, which includes step 1: respectively etching an anode electrode, a cathode electrode, and a gate electrode independent of the anode electrode and the cathode electrode on a substrate , the gate electrode communicates with at least one edge of the substrate; step 2: grow a dielectric layer on the gate electrode by atomic layer deposition; step 3: use gas phase polymerization on the dielectric layer grow the anode material in place; then etch the anode material to form a mesh anode layer with several through holes; Step 4: form an active layer on the mesh anode layer and perform annealing treatment; the active layer passes through the The through hole is connected to the dielectric layer; step five: then forming a cathode layer on the active layer. In the present invention, the internal electric field of the device is regulated by an external gating voltage to improve carrier separation, transport, and collection efficiency, and reduce recombination, thereby increasing Voc, Jsc, and FF values ​​at the same time.

Description

technical field

[0001] The invention relates to the technical field of photovoltaic devices such as solar cells, in particular to a field-effect solar electrode and a preparation method thereof. Background technique

[0002] Organic solar cells have the advantages of flexibility, low cost, and large-area preparation. They have huge market prospects and have become a hot spot for academic research and industrial development. From the perspective of practical application, the photoelectric conversion efficiency of laboratory organic solar cells needs to reach at least 10%, and the life span of more than 7 years is possible to try mass production and commercial application. In recent years, the improvement of the efficiency of organic solar cells has achieved very encouraging results. Several research groups have reported >8% efficiency. In 2012, some groups have reached the device efficiency threshold of 10%. From a research point of view, thermodynamic theory analysis bel...

Examples

Embodiment 1

[0031] Existing field-effect organic solar cells, such as figure 1 As shown, the anode electrode 220 , cathode electrode 230 and gate electrode 240 etched on the substrate 210 are included. The gate electrode 240 is generally located at the center of the substrate 210 . This structure is not conducive to the open circuit voltage V oc , short-circuit current J sc and an increase in fill factor FF.

[0032] This embodiment provides a field effect organic solar cell, such as figure 2 As shown, it includes an anode electrode 120 etched on the substrate, a cathode electrode 130 and a gate electrode 140, wherein the gate electrode 140 is an improvement on the gate electrode 240 of the prior art, in order to distinguish it from the existing gate electrode 240, The present invention is named "gate electrode". Thus, the solar cell of the present invention comprises from bottom to top: substrate 110 etched with anode electrode 120 and cathode electrode 130 , dielectric layer 150 ,...

Embodiment 2

[0048] The difference between this embodiment and Embodiment 1 is that each electrode pattern is prepared on the substrate by photolithography. Then use HCl and Zn powder to perform wet etching on the place not protected by photoresist. Alternatively, argon ion beam etching (IBE) is used to perform dry etching on the substrate without photoresist protection. An 80nm-thick Al2O3 is grown on the pair of gate electrodes by atomic deposition as the dielectric layer of the device. The PEDOT films grown on other substrates were peeled off and transferred onto the dielectric layer in ethanol.

[0049] Other procedures are identical with embodiment 1.

Embodiment 3

[0051] The difference between this embodiment and Embodiment 1 is that each electrode pattern is etched out with the aid of a mask plate by argon ion beam etching (IBE). Spin-coat 800 nm thick polyimide (PI) on the gate electrode pair as the dielectric layer of the device. A grid pattern is etched on the dielectric layer by photolithography, and then a layer of ITO electrode material with a thickness of 200 nanometers is sputtered to prepare a grid anode layer.

[0052] Other procedures are identical with embodiment 1.

technical field

[0001] The invention relates to the technical field of photovoltaic devices such as solar cells, in particular to a field-effect solar electrode and a preparation method thereof. Background technique

[0002] Organic solar cells have the advantages of flexibility, low cost, and large-area preparation. They have huge market prospects and have become a hot spot for academic research and industrial development. From the perspective of practical application, the photoelectric conversion efficiency of laboratory organic solar cells needs to reach at least 10%, and the life span of more than 7 years is possible to try mass production and commercial application. In recent years, the improvement of the efficiency of organic solar cells has achieved very encouraging results. Several research groups have reported >8% efficiency. In 2012, some groups have reached the device efficiency threshold of 10%. From a research point of view, thermodynamic theory analysis bel...

Examples

Embodiment 1

[0031] Existing field-effect organic solar cells, such as figure 1 As shown, the anode electrode 220 , cathode electrode 230 and gate electrode 240 etched on the substrate 210 are included. The gate electrode 240 is generally located at the center of the substrate 210 . This structure is not conducive to the open circuit voltage V oc , short-circuit current J sc and an increase in fill factor FF.

[0032] This embodiment provides a field effect organic solar cell, such as figure 2 As shown, it includes an anode electrode 120 etched on the substrate, a cathode electrode 130 and a gate electrode 140, wherein the gate electrode 140 is an improvement on the gate electrode 240 of the prior art, in order to distinguish it from the existing gate electrode 240, The present invention is named "gate electrode". Thus, the solar cell of the present invention comprises from bottom to top: substrate 110 etched with anode electrode 120 and cathode electrode 130 , dielectric layer 150 ,...

Embodiment 2

[0048] The difference between this embodiment and Embodiment 1 is that each electrode pattern is prepared on the substrate by photolithography. Then use HCl and Zn powder to perform wet etching on the place not protected by photoresist. Alternatively, argon ion beam etching (IBE) is used to perform dry etching on the substrate without photoresist protection. An 80nm-thick Al2O3 is grown on the pair of gate electrodes by atomic deposition as the dielectric layer of the device. The PEDOT films grown on other substrates were peeled off and transferred onto the dielectric layer in ethanol.

[0049] Other procedures are identical with embodiment 1.

Embodiment 3

[0051] The difference between this embodiment and Embodiment 1 is that each electrode pattern is etched out with the aid of a mask plate by argon ion beam etching (IBE). Spin-coat 800 nm thick polyimide (PI) on the gate electrode pair as the dielectric layer of the device. A grid pattern is etched on the dielectric layer by photolithography, and then a layer of ITO electrode material with a thickness of 200 nanometers is sputtered to prepare a grid anode layer.

[0052] Other procedures are identical with embodiment 1.

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