Double-selectable conduction type double-bracket gate-controlled source-drain resistance variable transistor and manufacturing method thereof

Abstract

The invention relates to a double-selection conductive type dual-bracket grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The device has structural characteristics of folded auxiliary grid, dual-bracket grid and a left side and a right side which are symmetric to each other, the function that a P conductive type and an N conductive type can be freelyswitched can be achieved, and the transistor has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent switch characteristic is achieved by a tunneling effect; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain can be symmetric to each other and can be exchanged and which is not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and that cannot be achieved by the prior art is achieved, thus, wider and more versatile logic functions are provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.

Description

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a double-bracket gate-controlled source-drain resistance variable transistor with double-selection conduction type and a manufacturing method suitable for low-power integrated circuit manufacturing. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, the tunneling mechanism of carriers is used, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs type devices. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymmetric structural ch...

Examples

Embodiment Construction

[0061] Below in conjunction with accompanying drawing, the present invention will be further described:

[0062] Such as figure 1 , figure 2 , image 3 and Figure 4 As shown, the dual-selection conduction type double-bracket gate-controlled source-drain resistance variable transistor includes a silicon substrate 12 of an SOI wafer, and above the silicon substrate 12 of the SOI wafer is a substrate insulating layer 11 of the SOI wafer. Above the round insulating substrate layer 11 are monocrystalline silicon thin film 1, part of folded auxiliary gate 2, source-drain interchangeable intrinsic region a3, source-drain interchangeable intrinsic region b4, metal source-drain interchangeable interchangeable region a5, metal source-drain interchangeable region b6, part of the gate electrode insulating layer 7, double-bracket gate electrode 8 and part of the insulating dielectric barrier layer 13; the single crystal silicon thin film 1 has an impurity concentration lower than 10 ...

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a double-bracket gate-controlled source-drain resistance variable transistor with double-selection conduction type and a manufacturing method suitable for low-power integrated circuit manufacturing. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, the tunneling mechanism of carriers is used, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs type devices. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymmetric structural ch...

Examples

Embodiment Construction

[0061] Below in conjunction with accompanying drawing, the present invention will be further described:

[0062] Such as figure 1 , figure 2 , image 3 and Figure 4 As shown, the dual-selection conduction type double-bracket gate-controlled source-drain resistance variable transistor includes a silicon substrate 12 of an SOI wafer, and above the silicon substrate 12 of the SOI wafer is a substrate insulating layer 11 of the SOI wafer. Above the round insulating substrate layer 11 are monocrystalline silicon thin film 1, part of folded auxiliary gate 2, source-drain interchangeable intrinsic region a3, source-drain interchangeable intrinsic region b4, metal source-drain interchangeable interchangeable region a5, metal source-drain interchangeable region b6, part of the gate electrode insulating layer 7, double-bracket gate electrode 8 and part of the insulating dielectric barrier layer 13; the single crystal silicon thin film 1 has an impurity concentration lower than 10 ...

Images