Discrete double rectangular gate-controlled source-drain resistive switching transistor of double conductivity type and manufacturing method thereof

Abstract

The invention relates to a dual-conductive type discrete dual-rectangular grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The transistor has a functionthat a P conductive type and an N conductive type can be freely switched and a bidirectional switch function, has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude and has the characteristics of a dual-rectangular grid discrete control structure. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent sub-threshold characteristic and switch characteristic are achieved by a Schottky barrier tunneling effect, and the static power consumption of the transistor is reduced; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and whichcannot be achieved by various existing transistor technologies are achieved, thus, a wider and versatile logic function is provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.

Description

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a dual-conduction type discrete double rectangular gate-controlled source-drain resistive transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, the tunneling mechanism of carriers is used, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs type devices. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymm...

Examples

Embodiment Construction

[0070] Below in conjunction with accompanying drawing, the present invention will be further described:

[0071] Such as figure 1 , figure 2 with image 3 As shown, a dual-conductivity type discrete double rectangular gate-controlled source-drain resistance switching transistor includes a silicon substrate 12 of an SOI wafer, and the silicon substrate 12 of the SOI wafer is a substrate insulating layer 11 of the SOI wafer. Above the substrate insulating layer 11 of the wafer is a part of the single crystal silicon film 1, the rectangular conductivity type selection gate 2 and the insulating dielectric barrier layer 13; wherein, the single crystal silicon film 1 has an impurity concentration lower than 10 16 cm -3The monocrystalline silicon semiconductor material has a U-shaped groove structure; the outer sides of the vertical parts on the left and right sides of the U-shaped groove structure formed by the single-crystal silicon film 1 are gate electrode insulating layers 7...

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a dual-conduction type discrete double rectangular gate-controlled source-drain resistive transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, the tunneling mechanism of carriers is used, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs type devices. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymm...

Examples

Embodiment Construction

[0070] Below in conjunction with accompanying drawing, the present invention will be further described:

[0071] Such as figure 1 , figure 2 with image 3 As shown, a dual-conductivity type discrete double rectangular gate-controlled source-drain resistance switching transistor includes a silicon substrate 12 of an SOI wafer, and the silicon substrate 12 of the SOI wafer is a substrate insulating layer 11 of the SOI wafer. Above the substrate insulating layer 11 of the wafer is a part of the single crystal silicon film 1, the rectangular conductivity type selection gate 2 and the insulating dielectric barrier layer 13; wherein, the single crystal silicon film 1 has an impurity concentration lower than 10 16 cm -3The monocrystalline silicon semiconductor material has a U-shaped groove structure; the outer sides of the vertical parts on the left and right sides of the U-shaped groove structure formed by the single-crystal silicon film 1 are gate electrode insulating layers 7...

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