Conduction type adjustable source-drain resistance variable double-sided folded gate transistor and manufacturing method thereof

Abstract

The invention relates to a conductive-type adjustable source-drain variable resistance dual-side folded transistor and a manufacturing method thereof. The transistor has a function that a P conductivetype and an N conductive type can be freely switched and a bidirectional switch function and has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent sub-threshold characteristic and switch characteristic are achieved by a Schottky barrier tunneling effect, and the static power consumption of the transistor is reduced; and compared with a conventional tunneling field-effect transistor, the transistorhas the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and which cannot be achieved by various existing transistor technologies are achieved, thus, a wider and versatile logic function is provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.

Description

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a conduction type adjustable source-drain resistance variable double-sided folded gate transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, they use the tunneling mechanism of carriers, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymmetric structura...

Examples

Embodiment Construction

[0102] Below in conjunction with accompanying drawing, the present invention will be further described:

[0103] like figure 1 , figure 2 and image 3 As shown, a conduction type adjustable source-drain resistance variable double-sided folded gate transistor includes a silicon substrate 12 of an SOI wafer, and a substrate insulating layer 11 of the SOI wafer is above the silicon substrate 12 of the SOI wafer. Above the substrate insulating layer 11 of the SOI wafer is a monocrystalline silicon film 1, a conductivity type selection gate 2, a partial area of ​​the gate electrode insulating layer 7, and a partial area of ​​the insulating dielectric barrier layer 13; wherein, the monocrystalline silicon film 1 is The impurity concentration is lower than 10 16 cm -3 The monocrystalline silicon semiconductor material has a U-shaped groove structure; the metal source-drain interchangeable region a5 and the metal source-drain interchangeable region b6 are respectively located on ...

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a conduction type adjustable source-drain resistance variable double-sided folded gate transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, they use the tunneling mechanism of carriers, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymmetric structura...

Examples

Embodiment Construction

[0102] Below in conjunction with accompanying drawing, the present invention will be further described:

[0103] like figure 1 , figure 2 and image 3 As shown, a conduction type adjustable source-drain resistance variable double-sided folded gate transistor includes a silicon substrate 12 of an SOI wafer, and a substrate insulating layer 11 of the SOI wafer is above the silicon substrate 12 of the SOI wafer. Above the substrate insulating layer 11 of the SOI wafer is a monocrystalline silicon film 1, a conductivity type selection gate 2, a partial area of ​​the gate electrode insulating layer 7, and a partial area of ​​the insulating dielectric barrier layer 13; wherein, the monocrystalline silicon film 1 is The impurity concentration is lower than 10 16 cm -3 The monocrystalline silicon semiconductor material has a U-shaped groove structure; the metal source-drain interchangeable region a5 and the metal source-drain interchangeable region b6 are respectively located on ...

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