H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor and manufacturing method thereof

Abstract

The invention relates to an H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor and a manufacturing method thereof. The transistor comprises an H-shaped gate electrode, a conductivity type regulation and control gate and a left-right symmetric structure characteristic. According to the invention, the free switching function between a P type conductivity type and an N type conductivity type, and the bidirectional switching function are realized. The advantages of low static power consumption, low reverse leakage current, strong gate control capability and low subthreshold swing are realized. Compared with a common MOSFET type device, the schottky barrier tunneling effect is utilized to achieve better subthreshold characteristics and switching characteristics. The static power consumption of the transistor is reduced. Compared with a common tunneling field effect transistor, the bidirectional switching characteristics, wherein a drain electrode and a source electrode are symmetrical and interchangeable, can be realized, wherein the bidirectional switching characteristics cannot be realized by the common tunneling field effect transistor.The free regulation and control function of the P type conductivity type and the N type conductivity type, which cannot be realized by various existing transistor technologies, can be realized. Therefore, the H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor is suitable for popularization and application.

Description

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to an H-shaped gate-controlled source-drain resistance variable conduction type adjustable transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, they use the tunneling mechanism of carriers, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymmetric structur...

Examples

Embodiment Construction

[0081] Below in conjunction with accompanying drawing, the present invention will be further described:

[0082] like figure 1 , figure 2 and image 3 As shown, an H-shaped gate-controlled source-drain resistance variable conduction type adjustable transistor includes a silicon substrate 12 of an SOI wafer, and above the silicon substrate 12 of the SOI wafer is a substrate insulating layer 11 of the SOI wafer. , above the substrate insulating layer 11 of the SOI wafer are the monocrystalline silicon film 1, the conductivity type control gate 2, the gate electrode insulating layer 7 and the partial area of ​​the insulating dielectric barrier layer 13, and the monocrystalline silicon film 1 has a "concave" shape Geometric features, impurity concentration below 10 16 cm -3The single crystal silicon semiconductor material, the inner surface of the groove-shaped structure formed by the single crystal silicon thin film 1 and the front and rear outer surfaces are attached with a...

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to an H-shaped gate-controlled source-drain resistance variable conduction type adjustable transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique

[0002] When ordinary tunneling field effect transistors are used as switching devices, they use the tunneling mechanism of carriers, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymmetric structur...

Examples

Embodiment Construction

[0081] Below in conjunction with accompanying drawing, the present invention will be further described:

[0082] like figure 1 , figure 2 and image 3 As shown, an H-shaped gate-controlled source-drain resistance variable conduction type adjustable transistor includes a silicon substrate 12 of an SOI wafer, and above the silicon substrate 12 of the SOI wafer is a substrate insulating layer 11 of the SOI wafer. , above the substrate insulating layer 11 of the SOI wafer are the monocrystalline silicon film 1, the conductivity type control gate 2, the gate electrode insulating layer 7 and the partial area of ​​the insulating dielectric barrier layer 13, and the monocrystalline silicon film 1 has a "concave" shape Geometric features, impurity concentration below 10 16 cm -3The single crystal silicon semiconductor material, the inner surface of the groove-shaped structure formed by the single crystal silicon thin film 1 and the front and rear outer surfaces are attached with a...

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