Laser-assisted heating annealing method

Abstract

The invention provides a laser-assisted heating annealing method which comprises the following steps: determining a specific wavelength of laser according to a material to be annealed in a heating annealing device, and selecting a laser; obtaining annealing requirements of the material to be annealed according to the material to be annealed and the area of the heating area; adjusting the positionrelationship between the laser and the heating area and the angle of an optical lens group according to the annealing requirements and the laser beam with the specific wavelength; and according to theannealing requirements, controlling the laser to emit the laser beam with the specific wavelength, wherein the laser beam passes through the optical lens group, so that the laser beam is focused in the heating area and meets the annealing requirements. The technical problem that specific fine partition heating cannot be conducted for annealing of the small area is solved, precise selection of a free space area is achieved, a proper laser is selected for different annealing materials, and the technical effects of increasing the annealing temperature and the annealing rate in a laser focusing direct heating mode are achieved.

Description

technical field

[0001] The invention relates to the technical field of semiconductor processing, in particular to a laser-assisted heating annealing method. Background technique

[0002] Annealing, as a commonly used process technology, is widely used in material modification and process optimization. At present, the main equipment used is (rapid) thermal annealing furnace (tube furnace), which usually places the heated material or device as a whole in the cavity ( In the tube furnace), thermocouples or halogen lamps are used to heat the material. The heating method is thermal radiation or light irradiation, which can only heat the material or device as a whole. At the same time, there are bottleneck restrictions such as the upper limit of the annealing temperature and the long cooling time. It is necessary to design a fast heating, fast cooling, controllable and free selection method for the position of the annealing area to solve the above problems.

[0003] However, the ...

Examples

Embodiment 1

[0026] figure 1 It is a schematic flowchart of a laser-assisted thermal annealing method in an embodiment of the present invention. An embodiment of the present invention provides a laser-assisted thermal annealing method, the method is applied to a thermal annealing device, the device includes a laser, an optical lens group, please refer to figure 1 , the method includes:

[0027] Step 10: Determine the specific wavelength of the laser according to the material to be annealed in the heating annealing device, and select the laser corresponding to the laser beam of the specific wavelength.

[0028] Further, the determining the specific wavelength of the laser according to the material to be annealed in the heating annealing device includes: according to the material to be annealed, selecting a laser wavelength with a high absorption rate of the material to be annealed as the specific wavelength laser .

[0029] Further, the laser is a direct semiconductor laser or a solid-st...

Embodiment 2

[0042] In order to better introduce the technical features and applications of the laser-assisted heating annealing method of the present invention, the application of the present invention will be described below in conjunction with specific embodiments, please refer to 2-4.

[0043] A method of laser-assisted heating annealing of the present invention is applied in the manufacture of semiconductor laser chips. During the manufacture of semiconductor laser chips, wafers need to be cleaved into chip sizes. figure 2 It is a schematic diagram of the semiconductor laser chip structure, such as figure 2 As shown, the light emitting area of ​​the chip is concentrated in the quantum well active layer (1*100μm 2 In a very small area, when the output power of a single die reaches 20W, the surface optical power density of the cavity is as high as 20MW / cm 2 , a large amount of heat is generated, and the heating of the cavity surface causes the band gap of the material to shrink to fo...

Embodiment 3

[0046] The embodiment of the present invention is a specific application of a laser-assisted heating annealing method on an optical waveguide. The polymer used in the optical waveguide is a combination of organic and inorganic substances. It can be seen that a laser-assisted heating annealing method of the present invention has a broad application prospect , please refer to Figure 5 .

[0047] Optical waveguide is a dielectric device that guides light waves to propagate in it. It is generally divided into two categories. One is integrated optical waveguides, including planar (film) dielectric optical waveguides and strip dielectric optical waveguides, which are usually part of optoelectronic integrated devices; One type is a cylindrical optical waveguide, the common one is an optical fiber. The principle of action is to prepare materials with different refractive indices, and use the total reflection characteristics of light to limit the transmission of the optical path to a...

technical field

[0001] The invention relates to the technical field of semiconductor processing, in particular to a laser-assisted heating annealing method. Background technique

[0002] Annealing, as a commonly used process technology, is widely used in material modification and process optimization. At present, the main equipment used is (rapid) thermal annealing furnace (tube furnace), which usually places the heated material or device as a whole in the cavity ( In the tube furnace), thermocouples or halogen lamps are used to heat the material. The heating method is thermal radiation or light irradiation, which can only heat the material or device as a whole. At the same time, there are bottleneck restrictions such as the upper limit of the annealing temperature and the long cooling time. It is necessary to design a fast heating, fast cooling, controllable and free selection method for the position of the annealing area to solve the above problems.

[0003] However, the ...

Examples

Embodiment 1

[0026] figure 1 It is a schematic flowchart of a laser-assisted thermal annealing method in an embodiment of the present invention. An embodiment of the present invention provides a laser-assisted thermal annealing method, the method is applied to a thermal annealing device, the device includes a laser, an optical lens group, please refer to figure 1 , the method includes:

[0027] Step 10: Determine the specific wavelength of the laser according to the material to be annealed in the heating annealing device, and select the laser corresponding to the laser beam of the specific wavelength.

[0028] Further, the determining the specific wavelength of the laser according to the material to be annealed in the heating annealing device includes: according to the material to be annealed, selecting a laser wavelength with a high absorption rate of the material to be annealed as the specific wavelength laser .

[0029] Further, the laser is a direct semiconductor laser or a solid-st...

Embodiment 2

[0042] In order to better introduce the technical features and applications of the laser-assisted heating annealing method of the present invention, the application of the present invention will be described below in conjunction with specific embodiments, please refer to 2-4.

[0043] A method of laser-assisted heating annealing of the present invention is applied in the manufacture of semiconductor laser chips. During the manufacture of semiconductor laser chips, wafers need to be cleaved into chip sizes. figure 2 It is a schematic diagram of the semiconductor laser chip structure, such as figure 2 As shown, the light emitting area of ​​the chip is concentrated in the quantum well active layer (1*100μm 2 In a very small area, when the output power of a single die reaches 20W, the surface optical power density of the cavity is as high as 20MW / cm 2 , a large amount of heat is generated, and the heating of the cavity surface causes the band gap of the material to shrink to fo...

Embodiment 3

[0046] The embodiment of the present invention is a specific application of a laser-assisted heating annealing method on an optical waveguide. The polymer used in the optical waveguide is a combination of organic and inorganic substances. It can be seen that a laser-assisted heating annealing method of the present invention has a broad application prospect , please refer to Figure 5 .

[0047] Optical waveguide is a dielectric device that guides light waves to propagate in it. It is generally divided into two categories. One is integrated optical waveguides, including planar (film) dielectric optical waveguides and strip dielectric optical waveguides, which are usually part of optoelectronic integrated devices; One type is a cylindrical optical waveguide, the common one is an optical fiber. The principle of action is to prepare materials with different refractive indices, and use the total reflection characteristics of light to limit the transmission of the optical path to a...

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