Process control method and device for semiconductor voltage protection device

Abstract

The present application provides a process control method and device for a semiconductor voltage protection device, the method comprising: determining the process parameters of each process node in a preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced; sequentially controlling the associated process equipment of the corresponding process node to perform processes on the process wafer based on the order and process parameters of each process node in the preset process flow; wherein the preset process flow comprises an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron coating source node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence, which can avoid the problem of low doping efficiency caused by equipment aging and the problem of wafer scrapping caused by incorrect process parameter configuration.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a process control method and device for a semiconductor voltage protection device. Background Art

[0002] Ion implantation is a method of introducing a controlled amount of impurities into a silicon substrate to change its electrical properties. It is a physical process, that is, no chemical reaction occurs, and its main purpose is to dope semiconductor materials. Each doping has specific requirements for the concentration and depth of impurities. The ability to repeatedly control the concentration and depth of impurities has become a standard process that meets the requirements of sub-0.25 micron feature sizes and large diameter silicon wafer manufacturing.

[0003] Existing semiconductor voltage protection devices are mostly doped by ion implantation. However, due to the aging of ion implantation equipment, small injection beam, and long implantation time, the doping efficiency cannot meet production requirements. At the same time, due to the wide variety of semiconductor voltage protection devices, the use of ion implantation will result in different annealing processes for different products, which can easily lead to chip scrapping due to incorrect process parameter configuration. Summary of the invention

[0004] The present application provides a process control method and apparatus for a semiconductor voltage protection device to avoid the problem of low doping efficiency caused by equipment aging and the problem of chip scrapping caused by incorrect process parameter configuration.

[0005] The present application provides a process control method for a semiconductor voltage protection device, the method comprising:

[0006] Determine the process parameters of each process node in the preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced;

[0007] Based on the sequence and process parameters of each process node in the preset process flow, the associated process equipment of the corresponding process node is controlled in sequence to process the process wafer to be processed;

[0008] The preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron source coating node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence.

[0009] According to a process control method for a semiconductor voltage protection device provided by the present application, the process parameters of each process node in a preset process flow are determined based on the type and performance requirement index of the target semiconductor voltage protection device to be produced, specifically including:

[0010] Based on the type of the target semiconductor voltage protection device to be produced, determine the epitaxial parameters, and determine the process parameters of the initial oxidation node and the primary oxidation photolithography etching node based on the epitaxial parameters; the epitaxial parameters include the epitaxial material type and the epitaxial layer thickness; the process parameters of the initial oxidation node include the oxygen content, oxidation temperature and oxidation time, and the process parameters of the primary oxidation photolithography etching node include the photoresist type, photolithography time, etching solution type, etching temperature and etching time;

[0011] Based on the performance requirement indicators of the target semiconductor voltage protection device to be produced, the process parameters of the boron coating source node and the annealing node are determined.

[0012] According to a process control method for a semiconductor voltage protection device provided by the present application, the parameters of the cleaning node, the front evaporation node, the alloy node, the thinning node and the back evaporation node adopt default parameters.

[0013] According to a process control method for a semiconductor voltage protection device provided in the present application, the process parameters of the boron coating source node include boron source thickness and uniformity, and the process parameters of the annealing node include annealing temperature, annealing time, gas flow rate and gas flow pattern.

[0014] According to a process control method for a semiconductor voltage protection device provided by the present application, based on the sequence and process parameters of each process node in a preset process flow, the associated process equipment of the corresponding process node is sequentially controlled to process the process wafer to be processed, specifically including:

[0015] Based on the process parameters of each process node in the preset process flow, a control instruction sequence of the associated process equipment of each process node is generated;

[0016] Based on the order of each process node in the preset process flow and the control instruction sequence of the process equipment associated with the process node, the process equipment associated with the corresponding process node is controlled in turn to process the wafer to be processed.

[0017] According to a process control method for a semiconductor voltage protection device provided by the present application, the control instruction sequence of the associated process equipment of each process node is generated based on the process parameters of each process node in the preset process flow, specifically including:

[0018] Based on the boron source thickness and uniformity corresponding to the boron coating source node, the turntable speed control instruction and the drip source amount control instruction of the glue coating station are generated;

[0019] Based on the annealing temperature, annealing time, gas flow rate and gas flow pattern corresponding to the annealing node, annealing control instructions and gas flow control instructions for the annealing equipment are generated.

[0020] According to a process control method for a semiconductor voltage protection device provided in the present application, the types of target semiconductor voltage protection devices to be produced include TVS and voltage regulators.

[0021] The present application also provides a process control device for a semiconductor voltage protection device, the device comprising:

[0022] A process parameter determination module, used to determine the process parameters of each process node in a preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced;

[0023] A process control module is used to sequentially control the associated process equipment of the corresponding process node to process the process wafer based on the sequence and process parameters of each process node in the preset process flow;

[0024] The preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron source coating node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence.

[0025] The present application also provides a non-transitory computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the process control method for a semiconductor voltage protection device as described in any one of the above are implemented.

[0026] The present application also provides a computer program product, comprising a computer program, wherein when the computer program is executed by a processor, the steps of the process control method for a semiconductor voltage protection device as described above are implemented.

[0027] The process control method and device of the semiconductor voltage protection device provided in the present application determine the process parameters of each process node in a preset process flow based on the type and performance requirement indicators of the target semiconductor voltage protection device to be produced; based on the order and process parameters of each process node in the preset process flow, control the associated process equipment of the corresponding process node in sequence to perform processes on the process wafer; wherein the preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron coating source node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence, which can avoid the problem of low doping efficiency caused by equipment aging and the problem of wafer scrapping caused by incorrect process parameter configuration. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the present application or the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 It is a flow chart of a process control method of a semiconductor voltage protection device provided by the present application;

[0030] Figure 2 It is a schematic diagram of the process flow for determining the process parameters of each process node provided in this application;

[0031] Figure 3 It is a control flow diagram of the associated process equipment provided by this application;

[0032] Figure 4 It is a structural schematic diagram of a process control device for a semiconductor voltage protection device provided by the present application;

[0033] Figure 5 It is a structural schematic diagram of the electronic device provided by this application. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0035] Figure 1 A schematic diagram of a process control method for a semiconductor voltage protection device provided in this application, such as Figure 1 As shown, the method includes:

[0036] Step 101 : determining the process parameters of each process node in a preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced.

[0037] Step 102, based on the sequence and process parameters of each process node in the preset process flow, sequentially controlling the associated process equipment of the corresponding process node to process the wafer to be processed;

[0038] The preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron source coating node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence.

[0039] Specifically, based on the foregoing, it can be known that existing semiconductor voltage protection devices are mostly doped by ion implantation. However, due to the aging of ion implantation equipment, small injection beam current, and long implantation time, the doping efficiency cannot meet production requirements. At the same time, due to the wide variety of semiconductor voltage protection devices, the use of ion implantation will result in different annealing processes for different products, and it is very easy for the chip to be scrapped due to misconfiguration of process parameters. Based on this, the present application proposes a process control method for semiconductor voltage protection devices, which uses automated control to avoid chip scrapping due to misconfiguration of process parameters, and at the same time avoids the problem of substandard doping efficiency through process improvements. More specifically, Figure 2 is a schematic diagram of the process flow for determining the process parameters of each process node provided in this application, such as Figure 2 As shown, the process parameters of each process node in the preset process flow are determined based on the type and performance requirement index of the target semiconductor voltage protection device to be produced, specifically including:

[0040] Step 1011, based on the type of the target semiconductor voltage protection device to be produced, determine the epitaxial parameters, and determine the process parameters of the initial oxidation node and the primary oxidation photolithography etching node based on the epitaxial parameters; the epitaxial parameters include the epitaxial material type and the epitaxial layer thickness; the process parameters of the initial oxidation node include the oxygen content, oxidation temperature and oxidation time, and the process parameters of the primary oxidation photolithography etching node include the photoresist type, photolithography time, etching solution type, etching temperature and etching time;

[0041] Step 1012, determining the process parameters of the boron coating source node and the annealing node based on the performance requirement index of the target semiconductor voltage protection device to be produced.

[0042] Specifically, the embodiment of the present application determines the epitaxial parameters corresponding to different types of voltage protection devices in advance through experiments, based on which, the epitaxial parameters can be determined based on the type of target semiconductor voltage protection device to be produced. After determining the epitaxial parameters, the process parameters of the initial oxidation node and the primary oxidation photolithography etching node can be determined based on the epitaxial parameters. It can be understood that the epitaxial parameters include the type of epitaxial material (usually silicon or silicon carbide) and the thickness of the epitaxial layer, the process parameters of the initial oxidation node include oxygen content, oxidation temperature and oxidation time, and the process parameters of the primary oxidation photolithography etching node include photoresist type, photolithography time, etching liquid type, etching temperature and etching time. More specifically, after determining the epitaxial material type and epitaxial layer thickness, the epitaxial layer resistivity can be determined based on the epitaxial layer material type. On this basis, for the initial oxidation node: Since the epitaxial layer thickness needs to be greater than the oxide layer thickness to ensure electrical performance, based on this, the appropriate oxide layer thickness can be determined by comprehensively considering the design requirements. At the same time, based on the influence of the epitaxial layer resistivity on the oxidation rate and oxidation uniformity, the appropriate oxidation temperature can be determined. When the oxidation temperature and the epitaxial layer material type are known, the oxidation rate can be determined, and then the oxygen content and oxidation time can be determined based on the oxide layer thickness and oxidation rate. For the primary oxidation photolithography etching node: Since the epitaxial layer with a lower resistivity needs to select a photoresist that is stable at high temperatures, the photoresist type can be determined after determining the epitaxial layer resistivity, and then the appropriate photolithography time can be determined considering the influence of the oxide layer thickness and the epitaxial layer resistivity on the photolithography effect. Based on the chemical properties of the oxide layer, the appropriate etching solution type, etching temperature and etching time combination are selected.

[0043] At the same time, the embodiment of the present application determines the epitaxial layer doping concentration corresponding to different performance requirements of different types of voltage protection devices in advance through experiments. Based on this, the process parameters of the boron-coated source node and the annealing node can be determined based on the performance requirements of the target semiconductor voltage protection device to be produced. The process parameters of the boron-coated source node include the thickness and uniformity of the boron source, and the process parameters of the annealing node include the annealing temperature, annealing time, gas flow rate and gas flow pattern. Specifically, after the epitaxial layer doping concentration is determined based on the performance requirements of the target semiconductor voltage protection device to be produced, for the boron-coated source node: the required boron source thickness can be calculated according to the epitaxial layer doping concentration. Generally speaking, a higher doping concentration requires a thicker boron source layer. Then select a suitable coating technology (such as spin coating, spray coating, etc.) based on the uniformity requirements. For the annealing node: determine the annealing temperature based on the epitaxial layer material type and the epitaxial layer doping concentration, and then calculate the required annealing time through diffusion models such as Fick's law to ensure uniform doping concentration. Determine the gas flow rate and gas flow pattern according to the furnace volume and the required gas flow rate to ensure a uniform atmosphere.

[0044] It is worth noting that the embodiment of the present application optimizes the process flow, and adopts the doping method of the boron source instead of the traditional ion implantation process to avoid the problem that the doping efficiency cannot meet the production requirements due to the aging of the ion implantation equipment, the small injection beam, and the long injection time. On this basis, considering that the main factors affecting the formation quality of the PN junction are diffusion and annealing, the embodiment of the present application focuses on controlling the process parameters of the boron source node and the annealing node, and the parameters of the cleaning node, the front evaporation node, the alloy node, the thinning node, and the back evaporation node are default parameters. Based on this, the process complexity can be minimized on the basis of ensuring the process quality, and the production efficiency can be improved. The types of target semiconductor voltage protection devices to be produced include TVS and regulators. It can be understood that the types of target semiconductor voltage protection devices to be produced can also include other devices similar to TVS and regulator processes, and the embodiments of the present application are not exhaustive here. Based on this, it can also be understood that for TVS, the aforementioned performance requirement index refers to the required breakdown voltage; for the regulator, the aforementioned performance requirement index refers to the required output voltage.

[0045] After determining the process parameters of each process node, the process can be carried out based on the preset process flow. Specifically, Figure 3 It is a control flow diagram of the associated process equipment provided by this application, such as Figure 3 As shown, based on the sequence and process parameters of each process node in the preset process flow, the associated process equipment of the corresponding process node is sequentially controlled to process the process wafer, specifically including:

[0046] Step 1021, based on the process parameters of each process node in the preset process flow, generating a control instruction sequence of the process equipment associated with each process node;

[0047] Step 1022, based on the order of each process node in the preset process flow and the control instruction sequence of the process equipment associated with the process node, sequentially control the process equipment associated with the corresponding process node to process the wafer to be processed.

[0048] More specifically, the process of generating a control instruction sequence of associated process equipment of each process node based on the process parameters of each process node in the preset process flow specifically includes:

[0049] Based on the boron source thickness and uniformity corresponding to the boron coating source node, the turntable speed control instruction and the drip source amount control instruction of the glue coating station are generated;

[0050] Based on the annealing temperature, annealing time, gas flow rate and gas flow pattern corresponding to the annealing node, annealing control instructions and gas flow control instructions for the annealing equipment are generated.

[0051] Based on this, the embodiment of the present application can sequentially control the process equipment associated with the corresponding process node to process the wafer to be processed based on the order of each process node in the preset process flow and the control instruction sequence of the process equipment associated with the process node.

[0052] The method provided in the embodiment of the present application determines the process parameters of each process node in a preset process flow based on the type and performance requirement indicators of the target semiconductor voltage protection device to be produced; based on the order and process parameters of each process node in the preset process flow, sequentially controls the associated process equipment of the corresponding process node to perform processes on the wafer to be processed; wherein the preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron coating source node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence, which can avoid the problem of low doping efficiency caused by equipment aging and the problem of wafer scrapping caused by incorrect process parameter configuration.

[0053] The process control device of the semiconductor voltage protection device provided in the present application is described below. The process control device of the semiconductor voltage protection device described below and the process control method of the semiconductor voltage protection device described above can be referred to each other.

[0054] Based on any of the above embodiments, Figure 4 A schematic diagram of the structure of the process control device of the semiconductor voltage protection device provided in this application, such as Figure 4 As shown, the device comprises:

[0055] A process parameter determination module 201 is used to determine the process parameters of each process node in a preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced;

[0056] The process control module 202 is used to sequentially control the associated process equipment of the corresponding process node to process the process wafer based on the sequence and process parameters of each process node in the preset process flow;

[0057] The preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron source coating node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence.

[0058] The device provided in the embodiment of the present application determines the process parameters of each process node in the preset process flow based on the type and performance requirement indicators of the target semiconductor voltage protection device to be produced through the process parameter determination module 201; the process control module 202 controls the associated process equipment of the corresponding process node in sequence to perform processes on the process wafer based on the order and process parameters of each process node in the preset process flow; wherein the preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron coating source node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence, which can avoid the problem of low doping efficiency caused by equipment aging and the problem of wafer scrapping caused by incorrect process parameter configuration.

[0059] Based on the above embodiment, the process parameters of each process node in the preset process flow are determined based on the type and performance requirement index of the target semiconductor voltage protection device to be produced, and specifically include:

[0060] Based on the type of the target semiconductor voltage protection device to be produced, determine the epitaxial parameters, and determine the process parameters of the initial oxidation node and the primary oxidation photolithography etching node based on the epitaxial parameters; the epitaxial parameters include the epitaxial material type and the epitaxial layer thickness; the process parameters of the initial oxidation node include the oxygen content, oxidation temperature and oxidation time, and the process parameters of the primary oxidation photolithography etching node include the photoresist type, photolithography time, etching solution type, etching temperature and etching time;

[0061] Based on the performance requirement indicators of the target semiconductor voltage protection device to be produced, the process parameters of the boron coating source node and the annealing node are determined.

[0062] Based on any of the above embodiments, the parameters of the cleaning node, the front evaporation node, the alloy node, the thinning node and the back evaporation node adopt default parameters.

[0063] Based on any of the above embodiments, the process parameters of the boron coating source node include boron source thickness and uniformity, and the process parameters of the annealing node include annealing temperature, annealing time, gas flow rate and gas flow pattern.

[0064] Based on any of the above embodiments, the process of sequentially controlling the associated process equipment of the corresponding process node to process the wafer to be processed based on the sequence and process parameters of each process node in the preset process flow specifically includes:

[0065] Based on the process parameters of each process node in the preset process flow, a control instruction sequence of the associated process equipment of each process node is generated;

[0066] Based on the order of each process node in the preset process flow and the control instruction sequence of the process equipment associated with the process node, the process equipment associated with the corresponding process node is controlled in turn to process the wafer to be processed.

[0067] Based on any of the above embodiments, the process parameters of each process node in the preset process flow are used to generate a control instruction sequence of the process equipment associated with each process node, specifically including:

[0068] Based on the boron source thickness and uniformity corresponding to the boron coating source node, the turntable speed control instruction and the drip source amount control instruction of the glue coating station are generated;

[0069] Based on the annealing temperature, annealing time, gas flow rate and gas flow pattern corresponding to the annealing node, annealing control instructions and gas flow control instructions for the annealing equipment are generated.

[0070] Based on any of the above embodiments, the types of the target semiconductor voltage protection devices to be produced include TVS and regulators.

[0071] Figure 5 An example of a physical structure diagram of an electronic device is shown in FIG. Figure 5 As shown, the electronic device may include: a processor 301, a communication interface 302, a memory 303 and a communication bus 304, wherein the processor 301, the communication interface 302 and the memory 303 communicate with each other through the communication bus 304. The processor 301 may call the logic instructions in the memory 303 to execute the process control method of the semiconductor voltage protection device provided by the above methods, the method comprising: determining the process parameters of each process node in the preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced; based on the order and process parameters of each process node in the preset process flow, sequentially controlling the associated process equipment of the corresponding process node to process the process wafer to be processed; wherein the preset process flow includes the initial oxidation node, the primary oxidation photolithography etching node, the cleaning node, the boron source coating node, the annealing node, the front evaporation node, the alloy node, the thinning node and the back evaporation node arranged in sequence.

[0072] In addition, the logic instructions in the above-mentioned memory 303 can be implemented in the form of a software functional unit and can be stored in a computer-readable storage medium when it is sold or used as an independent product. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0073] On the other hand, the present application also provides a computer program product, which includes a computer program, which can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute the process control method of the semiconductor voltage protection device provided by the above methods, and the method includes: based on the type and performance requirement indicators of the target semiconductor voltage protection device to be produced, determining the process parameters of each process node in a preset process flow; based on the order and process parameters of each process node in the preset process flow, sequentially controlling the associated process equipment of the corresponding process node to perform processes on the wafer to be processed; wherein the preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron coating source node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence.

[0074] On the other hand, the present application also provides a non-transitory computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, is implemented to execute the process control method for a semiconductor voltage protection device provided by the above-mentioned methods, the method comprising: determining the process parameters of each process node in a preset process flow based on the type and performance requirement indicators of the target semiconductor voltage protection device to be produced; based on the order and process parameters of each process node in the preset process flow, sequentially controlling the associated process equipment of the corresponding process node to perform processes on the wafer to be processed; wherein the preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron coating source node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence.

[0075] The device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without paying creative labor.

[0076] Through the description of the above implementation methods, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus a necessary general hardware platform, and of course, can also be implemented by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A process control method for a semiconductor voltage protection device, It is characterized in that The method comprises: Determine the process parameters of each process node in the preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced; Based on the sequence and process parameters of each process node in the preset process flow, the associated process equipment of the corresponding process node is controlled in sequence to process the process wafer to be processed; The preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron source coating node, an annealing node, a front evaporation node, an alloy node, a thinning node, and a back evaporation node arranged in sequence; The process parameters of the boron source coating node include the boron source thickness and uniformity, and the process parameters of the annealing node include the annealing temperature, annealing time, gas flow rate and gas flow pattern; The method of sequentially controlling the associated process equipment of the corresponding process nodes to process the process wafer based on the sequence and process parameters of each process node in the preset process flow specifically includes: Based on the process parameters of each process node in the preset process flow, a control instruction sequence of the associated process equipment of each process node is generated; Based on the order of each process node in the preset process flow and the control instruction sequence of the process equipment associated with the process node, the process equipment associated with the corresponding process node is controlled in sequence to process the wafer to be processed; The process of generating a control instruction sequence of associated process equipment of each process node based on the process parameters of each process node in the preset process flow specifically includes: Based on the boron source thickness and uniformity corresponding to the boron coating source node, the turntable speed control instruction and the drip source amount control instruction of the glue coating station are generated; Based on the annealing temperature, annealing time, gas flow rate and gas flow pattern corresponding to the annealing node, annealing control instructions and gas flow control instructions for the annealing equipment are generated.

2. The process control method of a semiconductor voltage protection device according to claim 1, It is characterized in that The process parameters of each process node in the preset process flow are determined based on the type and performance requirement index of the target semiconductor voltage protection device to be produced, specifically including: Based on the type of the target semiconductor voltage protection device to be produced, determine the epitaxial parameters, and determine the process parameters of the initial oxidation node and the primary oxidation photolithography etching node based on the epitaxial parameters; the epitaxial parameters include the epitaxial material type and the epitaxial layer thickness; the process parameters of the initial oxidation node include the oxygen content, oxidation temperature and oxidation time, and the process parameters of the primary oxidation photolithography etching node include the photoresist type, photolithography time, etching solution type, etching temperature and etching time; Based on the performance requirement indicators of the target semiconductor voltage protection device to be produced, the process parameters of the boron coating source node and the annealing node are determined.

3. The process control method of the semiconductor voltage protection device according to claim 2, It is characterized in that The parameters of the cleaning node, the front evaporation node, the alloy node, the thinning node and the back evaporation node adopt default parameters.

4. The process control method of a semiconductor voltage protection device according to claim 1, It is characterized in that The types of target semiconductor voltage protection devices to be produced include TVS and regulators.

5. A process control device for a semiconductor voltage protection device, It is characterized in that The device uses the process control method of the semiconductor voltage protection device according to claim 1 to process the process wafer, and the device comprises: A process parameter determination module, used to determine the process parameters of each process node in a preset process flow based on the type and performance requirement index of the target semiconductor voltage protection device to be produced; A process control module is used to sequentially control the associated process equipment of the corresponding process node to process the process wafer based on the sequence and process parameters of each process node in the preset process flow; The preset process flow includes an initial oxidation node, a primary oxidation photolithography etching node, a cleaning node, a boron source coating node, an annealing node, a front evaporation node, an alloy node, a thinning node and a back evaporation node arranged in sequence.

6. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, It is characterized in that When the processor executes the program, the steps of the process control method of the semiconductor voltage protection device according to any one of claims 1 to 4 are implemented.

7. A non-transitory computer-readable storage medium having a computer program stored thereon, It is characterized in that When the computer program is executed by a processor, the steps of the process control method for a semiconductor voltage protection device as claimed in any one of claims 1 to 4 are implemented.

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