Photon chip temperature sensor suitable for internal temperature measurement of power semiconductor device

Abstract

The invention relates to a photon chip temperature sensor suitable for internal temperature measurement of a power semiconductor device, the photon chip temperature sensor comprises an insulation interface, a single mode fiber, an end face coupler and a photon chip, the insulation interface comprises an interface main body, an interface base and an optical fiber connection port, the photon chip comprises a waveguide grating, and the interface main body and the optical fiber connection port are connected through the interface base. The photon chip temperature sensor can monitor the real-time temperature of a high-power semiconductor switching device in special environments such as high temperature, high pressure and a strong magnetic field, can be installed at different positions according to different requirements for temperature measurement positions, and can be used for monitoring the temperature of the high-power semiconductor switching device. And the system has relatively high flexibility. And meanwhile, the photonic chip temperature sensor has the advantages that the optical sensor is good in insulativity and can directly measure the internal temperature, and compared with a traditional optical temperature detection method using the fiber bragg grating to measure the temperature, the photonic chip temperature sensor is higher in strength.

Description

Technical Field

[0001] The present invention relates to the technical field of optical sensing applications, and in particular to a photonic chip temperature sensor suitable for measuring temperature inside a power semiconductor device. Background Art

[0002] With the rapid development of power electronics technology, power semiconductor switching devices are increasingly used in many fields such as industry, transportation, and energy. These devices, such as thyristors, power transistors (Giant Transistor, GTR), insulated gate field effect transistors (MOSFET, MOS) and insulated gate bipolar transistors (IGBT) for voltage-controlled current-controlled power electronic devices, play a key role in high-efficiency power conversion systems. However, with the increase in operating frequency and integration, the heat generated by the device during operation also increases, which makes temperature characteristics particularly important. High temperature will not only directly affect the performance of the device, such as increasing the on-resistance and slowing down the switching speed, but may also accelerate the aging of the material and shorten the service life of the device.

[0003] In addition, the traditional measurement method is mainly to measure the temperature of the heat sink or calculate it based on the thermal resistance of the power semiconductor and diode. This method is an indirect measurement method, which is prone to errors and is also easily affected by large currents and voltages, thereby reducing the reliability and safety of the measurement system. Therefore, in-depth research and optimization of the temperature characteristics of high-power semiconductor switching devices are of great significance to improving the overall reliability and efficiency of power electronic equipment and reducing maintenance costs. Summary of the invention

[0004] In view of this, the present invention provides a photonic chip temperature sensor suitable for measuring the internal temperature of a power semiconductor device.

[0005] The technical solutions adopted are as follows:

[0006] A photonic chip temperature sensor suitable for measuring temperature inside a power semiconductor device, comprising an insulating interface, a single-mode optical fiber, an end coupler and a photonic chip, wherein the insulating interface comprises an interface body, an interface base and an optical fiber connection port, the photonic chip comprises a waveguide grating, the interface body and the optical fiber connection port are connected by the interface base, the optical fiber connection port is connected to one end of the single-mode optical fiber, and the other end of the single-mode optical fiber is connected to the waveguide grating via the end coupler.

[0007] In one embodiment, the waveguide grating is a Si grating with a core thickness of 6 μm and a refractive index of 3.5457, and the type of the waveguide grating is a Bragg grating, with a grating duty cycle of 0.5, an etching depth of 25 nm, and a grating period number of 1000.

[0008] In one embodiment, the photonic chip further comprises a packaging material, and the waveguide grating is protected in the packaging material through a packaging process to form the photonic chip.

[0009] In one embodiment, the end face coupler is divided into four regions: a Trench region, an inverted tapered coupling region, a convergence region, and a straight waveguide buffer region. The Trench region is used to reduce the insertion loss between the end face coupler and the single-mode optical fiber. After passing through the Trench region, the light enters the inverted tapered coupling region and the convergence region in sequence, and then enters the straight waveguide buffer region, and then connects to the waveguide grating.

[0010] In one embodiment, the core waveguide thickness of the Trench zone, the inverted cone coupling zone, the convergence zone and the straight waveguide buffer zone is 0.51 μm, the length of the inverted cone coupling zone is 392 μm, the waveguide width of the inverted cone coupling zone close to one end of the Trench zone is 510 nm, the exit width of the inverted cone coupling zone is 120 nm, the cladding thickness of the inverted cone coupling zone is 42 μm, the cladding thickness of the convergence zone decreases from 42 μm to 4.45 μm, and the cladding materials of the Trench zone, the inverted cone coupling zone, the convergence zone and the straight waveguide buffer zone are all silicon dioxide.

[0011] In one embodiment, the end face coupler and the photonic chip are jointly etched on a substrate to form an optical waveguide structure, and the optical waveguide structure includes a silicon substrate, a silicon dioxide cladding and a waveguide core layer, wherein the silicon substrate has a thickness of 1 mm, a width of 2 mm and a length of 5 mm; the silicon dioxide cladding has a thickness of 4.51 μm and a refractive index of 1.4447; the waveguide core layer is made of Si, has a thickness of 0.51 μm and a refractive index of 3.5457.

[0012] In one embodiment, a C-shaped ceramic sleeve is embedded in the optical fiber connection port for fixing the single-mode optical fiber after connection.

[0013] In one embodiment, the single-mode optical fiber is an APC optical fiber, which is used to reduce end face reflection, and uses polyimide as a coating layer to improve the high temperature resistance of the optical fiber.

[0014] In one embodiment, an interface bayonet is disposed on opposite sides of the side wall of the interface body to achieve interference fit.

[0015] The present invention has at least the following beneficial effects: the photon chip temperature sensor provided by the present invention is suitable for measuring the temperature inside a power semiconductor device. Based on the temperature characteristics of the photon chip, the optical waveguide grating is used to accurately monitor the junction temperature in real time inside a high-power semiconductor switch device. The photon chip temperature sensor has a compact structure, a small volume, and can be integrated on a single chip. The structural strength after packaging is high, and it is easy to fix. When fixed, the internal waveguide grating can avoid being affected by external stress, and has higher measurement accuracy. Moreover, the photon chip temperature sensor provided by the present invention is suitable for measuring the temperature inside a power semiconductor device. It can monitor the real-time temperature of a high-power semiconductor switch device under special environments such as high temperature, high pressure, and strong magnetic field. The optical path part uses a waveguide grating structure as a temperature sensor. According to different requirements for the temperature measurement position, it can be installed in different positions, and the system has high flexibility. At the same time, it not only has the advantages of good insulation of optical sensors and can directly measure the internal temperature, but also has higher strength than the traditional optical temperature detection method using fiber grating temperature measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural schematic diagram of a sensing monitoring system provided by the present invention and applied to a photonic chip temperature sensor suitable for measuring the temperature inside a power semiconductor device;

[0017] Figure 2 It is a structural schematic diagram of a photonic chip temperature sensor suitable for measuring the internal temperature of a power semiconductor device provided by the present invention;

[0018] Figure 3 is a schematic diagram of the interface section a;

[0019] Figure 4 is a schematic diagram of the interface section b;

[0020] Figure 5 is a schematic diagram of the interface section c;

[0021] Figure 6 is a schematic diagram of the structure of the refractive index distribution of the waveguide grating;

[0022] Figure 7 It is a schematic diagram of the structure of the end coupler;

[0023] Figure 8 is a schematic cross-sectional view of an optical waveguide structure;

[0024] Fig. 9 This is a schematic diagram of the arrangement of sensors inside the IGBT;

[0025] In the figure, 1 is the interface body, 2 is the interface bayonet, 3 is the interface base, 4 is the optical fiber connection port, 5 is the single-mode optical fiber, 6 is the packaging material, 7 is the waveguide grating, 8 is the end coupler, 9 is the photonic chip, 10 is the silicon substrate, 11 is the silica cladding, 12 is the waveguide core layer, 13 is the Trench area, 14 is the inverted cone coupling area, 15 is the convergence area, 16 is the straight waveguide buffer, 17 is the IGBT chip, 18 is the aluminum bonding wire, 19 is the DBC liner, 20 is the IGBT substrate, 21 is the IGBT power submodule, 22 is the C-type ceramic sleeve, 23 is the IGBT housing, and 24 is the insulating interface. DETAILED DESCRIPTION

[0026] This embodiment provides a photon chip temperature sensor suitable for measuring the temperature inside a power semiconductor device, which is referred to as the photon chip temperature sensor below. Figure 1 As shown, the sensor monitoring system used by the photon chip temperature sensor provided by the present invention comprises a broadband light source, an optical splitter, an optical circulator, a photon chip temperature sensor (corresponding to Figure 1 The broadband light emitted by the broadband light source is evenly distributed by the optical splitter, and then passes through the optical circulator to the optical waveguide grating sensor. The light reflected by the optical waveguide grating sensor passes through the circulator and enters the wavelength division multiplexer from another exit. Then, the reflected light of different wavelengths after being combined by the wavelength division multiplexer is spectrally analyzed, and the data after spectral analysis is sent to the host computer. The host computer analyzes the data transmitted by the spectrometer and then analyzes the drift of the reflected wavelength.

[0027] like Figure 2 As shown, the photonic chip temperature sensor includes an insulating interface 24 , a single-mode optical fiber 5 , an end face coupler 8 and a photonic chip 9 .

[0028] The insulating interface 24 includes an interface body 1, an interface base 3 and an optical fiber connection port 4. The side walls of the interface body 1 are opposite to the sides ( Figure 2 The interface body 1 and the optical fiber connection port 4 are connected by an interface base 3. A C-type ceramic sleeve 22 is embedded in the optical fiber connection port 4 for fixing the single-mode optical fiber after access. The interface body 1 is the same as the national standard optical fiber interface LC, and an external adapter interface can be used. In addition, the interface body 1 does not contain any metal materials, which avoids the disadvantage that traditional metal interfaces are easily affected by potential, fully meets the special environmental requirements of IGBT modules working in high power and high current, and the interface can be safely used under the interface requirements of any scenario. The interface body 1 only has an interface base 3 and an optical fiber connection port 4 inside the IGBT, and the interface structure is small, which meets the use of the compact internal structure of the IGBT. When in use, the single-mode optical fiber 5 is inserted into the C-type ceramic sleeve structure 22 to allow the optical fiber to be stably connected. Figure 3 It is a schematic diagram of the cross section a of the interface body 1; Figure 4 It is a schematic diagram of the cross section b of the interface body 1; Figure 5 It is a schematic diagram of section c of the interface body 1.

[0029] The single-mode optical fiber 5 is an APC optical fiber, which is used to reduce end face reflection. Specifically, the single-mode optical fiber 5 is an APC optical fiber with an 8° angle at the optical fiber end face. The 8° angle bevel allows the optical fiber end face to fit more tightly, and reflects the light to the cladding through its bevel angle instead of directly returning to the light source, thereby providing better connection performance. Polyimide is used as the coating layer of the single-mode optical fiber 5 to improve the high temperature resistance of the optical fiber. The optical fiber connector 4 is connected to one end of the single-mode optical fiber 5, and because the single-mode optical fiber 5 cannot be excessively rotated, epoxy resin glue is used to tightly connect and fix the single-mode optical fiber 5 and the optical fiber connector 4.

[0030] The photonic chip 9 includes a waveguide grating 7, and the photonic chip 9 also includes a packaging material 6. The waveguide grating 7 is protected in the packaging material 6 through a packaging process to form the photonic chip 9. The other end of the single-mode optical fiber 5 is connected to the waveguide grating 7 through an end coupler 8. The waveguide grating 7 is an optical waveguide structure with a periodic change in refractive index, which reflects a specific light wavelength that meets the reflection condition. The waveguide grating 7 is structurally fragile, so it needs to be protected in the packaging material 6 through a packaging process when in use. As another embodiment, the waveguide grating 7 and the end coupler 8 are both protected in the packaging material 6 through a packaging process to form the photonic chip 9.

[0031] The material selection of the photonic chip 9 is diverse. The waveguide grating is mainly prepared by spin coating, photolithography, etching and other processes, and almost all waveguide materials can be used, such as glass, lithium niobate, semiconductors and polymers, etc., which has great development potential. Different waveguide gratings can be designed and used according to different requirements. For example, polymer materials are easy to prepare, low in cost, and have excellent optical and electrical properties; silicon wafers or SiO2 substrate materials have good compatibility with many optical materials; polymer materials have a high thermo-optical coefficient and are suitable for preparing thermal sensing elements. Considering cost and function, this embodiment uses Si as the substrate material.

[0032] As a specific embodiment, the waveguide grating 7 is a Si grating with a core thickness of 6 μm and a refractive index of 3.5457, and the type of the waveguide grating 7 is a Bragg grating, the grating duty cycle is set to 0.5, the etching depth is 25 nm, the grating period number is 1000, and the grating structure is as follows: Figure 6 shown.

[0033] The core diameter of the single-mode optical fiber 5 is larger than the core cross-section of the waveguide grating 7, and when in use, they are connected via an end coupler 8 to increase the optical coupling efficiency and improve the system reliability.

[0034] In this embodiment, the end coupler 8 is a device for connecting the waveguide grating 7 and the single-mode optical fiber 5. The end coupler 8 is an inverted cone structure as a whole, which is divided into four areas: a trench area 13, an inverted cone coupling area 14, a convergence area 15 and a straight waveguide buffer area 16. Figure 7 As shown, the Trench region 13, the inverted tapered coupling region 14, the convergence region 15 and the straight waveguide buffer region 16 are connected in sequence, and the photonic chip 9 is connected after the straight waveguide buffer region 16 to form a complete temperature sensing circuit. The Trench region 13 is used to make the end face of the silicon waveguide smoother and reduce the insertion loss of the end face coupler 8 and the single-mode optical fiber 5. After passing through the Trench region 13, the light enters the inverted tapered coupling region 14 and the convergence region 15 in sequence and then enters the straight waveguide buffer region 16, becoming a standard rectangular silicon waveguide structure, and then connected to the waveguide grating 7.

[0035] The core waveguide thicknesses of the Trench zone 13, the inverted tapered coupling zone 14, the convergence zone 15 and the straight waveguide buffer zone 16 are all 0.51 μm, the length of the inverted tapered coupling zone 14 is 392 μm, the waveguide width of the inverted tapered coupling zone 14 at one end close to the Trench zone 13 is 510 nm, and the exit width of the inverted tapered coupling zone 14 is 120 nm.

[0036] The cladding thickness of the inverted tapered coupling region 14 is 42 μm, and the cladding thickness of the convergence region 15 slowly decreases from 42 μm to 4.45 μm. The cladding materials of the trench region 13, the inverted tapered coupling region 14, the convergence region 15 and the straight waveguide buffer region 16 are all silicon dioxide.

[0037] The end face coupler 8 and the photonic chip 9 are jointly etched on the substrate to form an optical waveguide structure. The length of the entire optical waveguide structure is 5 mm, the width is 2 mm, and the thickness is 1.9 mm. The total length of the end face coupler 8 is 0.7 mm, the width is 0.5 mm, the total length of the waveguide grating 7 is 310 μm, the waveguide length is 9 μm, the width is 0.51 μm, and the remaining part encapsulates part of the bare optical fiber.

[0038] like Figure 8 As shown, the optical waveguide structure includes a silicon substrate 10, a silicon dioxide cladding 11 and a waveguide core layer 12. The silicon substrate 10 has a thickness of 1 mm, a width of 2 mm and a length of 5 mm; the silicon dioxide cladding 11 has a thickness of 4.51 μm and a refractive index of 1.4447; the waveguide core layer 12 is made of Si, has a thickness of 0.51 μm and a refractive index of 3.5457.

[0039] This embodiment also provides a specific application of the photonic chip temperature sensor, namely, the application of IGBT devices in flexible DC transmission converter valves. This embodiment specifically provides a photonic chip temperature sensor optoelectronic co-sealing structure suitable for use in an IGBT. The structure of the IGBT part used in the photonic chip temperature sensor includes: an IGBT housing 23, an IGBT chip 17 arranged in the housing, an aluminum bonding wire 18, a DBC liner 19, an IGBT substrate 20 and an IGBT power sub-module 21. Fig. 9 Schematic diagram of the arrangement of sensors inside the IGBT. The insulating interface 24 passes through the IGBT housing 23, one end is connected to the photon chip 9, and the other end is connected to the external optical detection system. The photon chip 9 can be installed on the IGBT chip 17, DBC liner 19, and IGBT substrate 20 according to different scene requirements to monitor the temperature of the corresponding IGBT chip 17, IGBT power submodule 21, and IGBT substrate 20. When installing, the photon chip 9 should be placed above the IGBT chip 17 and close to it, and placed below the aluminum bonding wire 18.

[0040] The IGBT chip 17 is welded on the DBC liner 19 through a welding layer and a copper sheet; six IGBT chips 17 together form an IGBT power submodule 21; six IGBT power submodules 21 are also welded on the substrate through a copper sheet and a welding layer to form an IGBT power module. When in use, the insulating interface 24 is placed outside the IGBT module, and the IGBT housing 23 is buckled between the interface bayonet 2 and the interface base 3 to ensure the stability of the interface.

[0041] The photonic chip temperature sensor is arranged in the IGBT as follows: Fig. 9 As shown, there are three arrangements, through which the temperature at any position inside the IGBT can be monitored. Fig. 9 The left photon chip temperature sensor is mainly responsible for monitoring the temperature of the DBC liner 19 between the chips inside the IGBT power submodule 21; the middle photon chip temperature sensor is mainly responsible for monitoring the temperature change on a single IGBT chip 17; the right photon chip temperature sensor is mainly responsible for monitoring the temperature change of the IGBT substrate 20 between two different power submodules. In specific applications, the single-mode optical fiber 5 and the photon chip 9 are buried between the upper surface of the chip and the lower part of the arched chip pins, and fixed with epoxy resin glue. Through this measurement method, the maximum distance between the temperature measuring element and the measured chip in space is achieved, providing reliability for high-precision measurement results.

[0042] During the packaging process of the photonic chip temperature sensor, it should be noted that: the photonic chip 9 needs to be fixed with epoxy glue in the IGBT, the optical fiber connection port of the photonic chip 9 is placed on the IGBT chip 17 and fixed at one end with epoxy glue, and the other end is placed freely, so as not to affect the thermal expansion and contraction or refractive index change caused by the temperature characteristics during normal temperature monitoring of the photonic chip 9. When monitoring the temperature of the IGBT power sub-module 21, the optical fiber connection port of the photonic chip 9 needs to be fixed on the DBC liner 19 with epoxy glue. The optical fiber connection port of the photonic chip 9 needs to be fixed on the IGBT substrate 20 with epoxy glue. After the internal components are installed, the inside of the IGBT is injected with insulating glue and sealed. Finally, the real-time monitoring of the internal temperature of the IGBT can be achieved through the pigtail connection interface and the optical detection device.

[0043] According to the actual production situation, the main process flow of packaging of IGBT power sub-module 21 is as follows: DBC liner 19 patch → DBC liner 19 welding → ultrasonic wire bonding → DBC liner 19 testing → IGBT substrate 20 assembly and welding → photonic chip 9 fixing → epoxy glue application → epoxy glue curing → shell installation and insulation glue pouring → pigtail connector connection → IGBT power sub-module 21 testing.

[0044] In the manufacturing process of the photonic chip 9, this embodiment also provides a non-cover plate grinding technology, which reduces the thickness of the substrate without destroying the grating structure, realizes the high integration of the optical waveguide structure, and improves the performance of the sensor chip. The specific implementation method is: fill the surface of the optical waveguide structure with paraffin to make it smooth and make the upper cover plate adhere to the optical waveguide structure, and then use the suction cup to absorb the upper cover plate, so that the substrate of the sensor chip can be ground to a preset thickness by a professional grinding wheel. After completing the above operations, place the optical waveguide structure into the heating equipment, adjust the temperature to melt all the paraffin filled on the optical waveguide structure, and then remove the upper cover plate, so as to complete the manufacturing steps. In addition, a detailed performance test is performed on the packaged sensor.

[0045] Therefore, this embodiment provides a new photonic chip temperature sensor optoelectronic co-sealed structure suitable for IGBT. The photonic chip structure design is flexible, and the chip substrate can be designed into different shapes and structures according to different usage scenarios, which improves the flexibility of temperature measurement point selection. The combined use of waveguide gratings and optical fibers can effectively cover all required temperature measurement points in the device with less space required, and will not affect each other due to the excessive number of fiber gratings and complex wiring when measuring multiple points. In addition, this embodiment uses a completely insulated new interface to realize the connection between the internal sensor module of the power semiconductor device and the external transmission optical path, which greatly improves the reliability and safety of the system.

[0046] In summary, the specific protection contents of the present invention are as follows: 1. The present invention provides a design scheme for a new temperature sensing system with internal temperature monitoring. Its main innovation lies in the use of waveguide gratings to accurately monitor the junction temperature in real time inside a high-power semiconductor switch device. 2. The present invention provides a new waveguide grating chip processing technology, which uses coverless grinding technology to reduce the thickness of the substrate without destroying the grating structure, thereby achieving high integration and miniaturization of waveguide grating chips and improving the performance of the sensor chip. 3. The present invention designs a new fully insulated interface to achieve the connection between the internal sensor module of a high-power semiconductor switch device and the external transmission optical path. According to different requirements for the temperature measurement position, the waveguide grating sensor can be installed in different positions, and the system has high flexibility. 4. The present invention provides a new optoelectronic co-sealing packaging method, which can sort and place the internal temperature sensors of the IGBT according to specific engineering requirements, so as to achieve real-time monitoring of the temperature of each point inside the IGBT.

[0047] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A photonic chip temperature sensor suitable for measuring temperature inside a power semiconductor device, characterized in that: It includes an insulating interface, a single-mode optical fiber, an end coupler and a photonic chip, wherein the insulating interface includes an interface body, an interface base and an optical fiber connection port, the photonic chip includes a waveguide grating, the interface body and the optical fiber connection port are connected by the interface base, the optical fiber connection port is connected to one end of the single-mode optical fiber, and the other end of the single-mode optical fiber is connected to the waveguide grating through the end coupler.

2. The photonic chip temperature sensor for measuring temperature inside a power semiconductor device according to claim 1, characterized in that: The waveguide grating is a Si grating with a core thickness of 6 μm and a refractive index of 3.5457, and the type of the waveguide grating is a Bragg grating, with a grating duty cycle of 0.5, an etching depth of 25 nm, and a grating period number of 1000.

3. The photonic chip temperature sensor for measuring temperature inside a power semiconductor device according to claim 1, characterized in that: The photonic chip further includes a packaging material, and the waveguide grating is protected in the packaging material through a packaging process to form the photonic chip.

4. The photonic chip temperature sensor for measuring temperature inside a power semiconductor device according to claim 1, characterized in that: The end face coupler is divided into four areas: a Trench area, an inverted tapered coupling area, a convergence area and a straight waveguide buffer area. The Trench area is used to reduce the insertion loss between the end face coupler and the single-mode optical fiber. After passing through the Trench area, the light enters the inverted tapered coupling area and the convergence area in sequence, and then enters the straight waveguide buffer area, and then connects to the waveguide grating.

5. The photonic chip temperature sensor for measuring temperature inside a power semiconductor device according to claim 4, characterized in that: The core waveguide thickness of the Trench zone, inverted cone coupling zone, convergence zone and straight waveguide buffer zone is 0.51 μm, the length of the inverted cone coupling zone is 392 μm, the waveguide width of the inverted cone coupling zone close to one end of the Trench zone is 510 nm, the exit width of the inverted cone coupling zone is 120 nm, the cladding thickness of the inverted cone coupling zone is 42 μm, the cladding thickness of the convergence zone decreases from 42 μm to 4.45 μm, and the cladding materials of the Trench zone, inverted cone coupling zone, convergence zone and straight waveguide buffer zone are all silicon dioxide.

6. The photonic chip temperature sensor for measuring temperature inside a power semiconductor device according to claim 4, characterized in that: The end face coupler and the photonic chip are jointly etched on a substrate to form an optical waveguide structure, which includes a silicon substrate, a silicon dioxide cladding and a waveguide core layer. The silicon substrate has a thickness of 1 mm, a width of 2 mm and a length of 5 mm; the silicon dioxide cladding has a thickness of 4.51 μm and a refractive index of 1.4447; the waveguide core layer is made of Si, has a thickness of 0.51 μm and a refractive index of 3.5457.

7. The photonic chip temperature sensor for measuring the temperature inside a power semiconductor device according to claim 1, characterized in that: A C-shaped ceramic sleeve is embedded in the optical fiber connection port and is used for fixing the single-mode optical fiber after it is connected.

8. The photonic chip temperature sensor for measuring temperature inside a power semiconductor device according to claim 1, characterized in that: The single-mode optical fiber is an APC optical fiber, which is used to reduce end face reflection, and uses polyimide as a coating layer to improve the high temperature resistance of the optical fiber.

9. The photonic chip temperature sensor for measuring the temperature inside a power semiconductor device according to claim 1, characterized in that: An interface bayonet is disposed on opposite sides of the side wall of the interface body to achieve interference fit.

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