Real-time heat dissipation chuck device and heat dissipation control method

Abstract

The invention discloses a real-time heat dissipation chuck device and a heat dissipation control method. The chuck device comprises a cover plate, a flow channel component and a heat pipe component which are sequentially arranged in a stacked mode. A silicon wafer is placed in the center of the runner component, an annular runner is arranged around the silicon wafer, and a cover plate covers the annular runner; a heat pipe component is arranged below the flow channel component and comprises a heat pipe array, the heat pipe array extends to the position below the annular flow channel in the row direction, and the effective heat transfer area of the heat pipe array covers the exposure area of the upper surface of the silicon wafer. The method is beneficial to improving the stability and uniformity of the global temperature of the silicon wafer under the exposure working condition, and is beneficial to reducing the thermal deformation of the silicon wafer so as to improve the alignment precision.

Description

Technical Field

[0001] The invention relates to a photolithography device in the field of semiconductor manufacturing, and in particular to a real-time heat dissipation chuck device and a heat dissipation control method. Background Art

[0002] The semiconductor industry is the core driving force for the rapid development of the modern information industry. The semiconductor process integrated circuit manufacturing process involves five stages: silicon wafer preparation, chip manufacturing, silicon wafer testing and picking, assembly and packaging, and final testing. Among them, photolithography is a key process in the integrated circuit manufacturing process. It uses the principle of photochemical reaction to copy the existing graphics on the mask to the surface of the silicon wafer coated with glue through exposure. However, during the exposure process, the exposure energy will be deposited on the silicon wafer, causing temperature rise, which will not only affect the performance of the photoresist, but also cause thermal deformation of the silicon wafer and bring about overlay errors; and for immersion lithography machines, part of the heat deposited on the silicon wafer will be transferred to the immersion liquid by convection heat transfer, which will cause the immersion liquid to produce a vertical temperature gradient, thereby causing lithography defocus, and ultimately resulting in exposure defects.

[0003] Regarding the above problems, the industry often takes relevant cooling measures for the chuck device that carries the silicon wafer to dissipate heat for the silicon wafer. However, during the exposure process, since each exposure unit on the silicon wafer is exposed one by one in a certain order, the heat distribution area on the silicon wafer will change with the space. This puts forward relevant requirements for the chuck heat dissipation device. On the one hand, it is necessary to dissipate heat in real time for the local exposure domain, and on the other hand, no additional thermal interference can be introduced into the non-exposure domain. The cooling measures taken in the past, such as setting up cooling channels for water cooling or installing semiconductor refrigeration sheets for cooling, often require the design of complex channels, circuits and control systems when realizing the local real-time heat dissipation function. What's more serious is that when these heat dissipation measures are applied, additional cold will often be introduced into the non-exposure domain of the silicon wafer, thereby exacerbating the unevenness and instability of the temperature distribution of the silicon wafer, and failing to achieve the expected heat dissipation effect. Summary of the invention

[0004] In view of the above problems existing in the existing chuck heat dissipation device, in order to overcome the deficiencies in the prior art, the purpose of the present invention is to provide a real-time heat dissipation chuck device and a heat dissipation control method. The present invention is used to solve the problem of local dynamic heat accumulation on the silicon wafer caused by the photolithography machine during the exposure of the silicon wafer, and the problem of thermal interference introduced to the non-exposure domain by traditional cooling measures while dissipating the heat in the exposure domain of the silicon wafer; and based on the provided real-time heat dissipation chuck device, a heat dissipation control method for solving the above two problems is provided, so that the local heat in the exposure domain of the silicon wafer can be transported in real time while the temperature stability and uniformity of the non-exposure domain can be maintained.

[0005] The specific technical solution adopted by the present invention is:

[0006] 1. A real-time heat dissipation chuck device

[0007] The real-time heat dissipation chuck device includes a cover plate, a flow channel component and a heat pipe component which are stacked in sequence; a silicon wafer is placed on the flow channel component, the flow channel component includes an annular flow channel, the annular flow channel is covered with a cover plate, and the annular flow channel is arranged around the silicon wafer; a heat pipe component is arranged below the flow channel component, the heat pipe component is mainly composed of a heat pipe array, the heat pipe array is mainly composed of multiple heat pipes arranged along a rectangular array, and the heat pipe array extends along its own row direction to below the annular flow channel.

[0008] The effective heat transfer area of ​​the heat pipe array covers the exposure area on the top surface of the silicon wafer. The heat pipe array is mainly composed of 2N heat pipes arranged in a rectangular array of N rows and two columns. Each heat pipe is arranged along the row direction of the heat pipe array, and the upper wall surface of each heat pipe is in contact with the bottom surface of the flow channel component; the exposure area on the upper surface of the silicon wafer is divided into a plurality of exposure unit areas, and a plurality of exposure unit areas are arranged above each heat pipe along its own length direction. The effective heat transfer area of ​​each heat pipe matches the size of the exposure unit area in the column direction of the heat pipe array.

[0009] The flow channel component includes an annular temperature-controlled water flow channel and an annular vacuum interlayer; the annular vacuum interlayer is located between the annular temperature-controlled water flow channel and the silicon wafer; the annular temperature-controlled water flow channel is provided with two primary temperature-controlled water inlets and two secondary temperature-controlled cooling water inlet and outlet groups; the two primary temperature-controlled water inlets are arranged symmetrically along the radial direction; the two secondary temperature-controlled cooling water inlet and outlet groups are arranged symmetrically along the radial direction; each secondary temperature-controlled cooling water inlet and outlet group is composed of N secondary temperature-controlled cooling water inlet and outlet pairs, and the secondary temperature-controlled cooling water outlet and the secondary temperature-controlled cooling water inlet in each secondary temperature-controlled cooling water inlet and outlet pair are arranged adjacent to each other.

[0010] Each secondary temperature-controlled cooling water inlet and outlet is aligned, and a section of annular temperature-controlled water flow channel between the secondary temperature-controlled cooling water inlet and the secondary temperature-controlled cooling water outlet forms a cooling domain; the cooling domains correspond one-to-one to the heat pipes, and each cooling domain is located above the outer end of the corresponding heat pipe, forming the condensation end of the heat pipe.

[0011] The flow channel component also includes a first temperature sensor and a second temperature sensor; a first temperature sensor is correspondingly installed on the inner wall of each cooling domain, which is used to monitor the temperature of the cooling domain in real time; a second temperature sensor is correspondingly installed on the outer bottom surface of each cooling domain, and the temperature measuring end of the second temperature sensor is in contact with the tube wall of the heat pipe below the cooling domain, which is used to monitor the tube wall temperature of each heat pipe condensation end.

[0012] The primary temperature-controlled water inlet and the secondary temperature-controlled cooling water inlet are used to inject primary temperature-controlled water and secondary temperature-controlled cooling water into the annular temperature-controlled water flow channel respectively; the temperature of the primary temperature-controlled water, the operating temperature of the heat pipe and the optimal operating temperature of the silicon wafer are equal, and the temperature of the secondary temperature-controlled cooling water is lower than the temperature of the primary temperature-controlled water; for each secondary temperature-controlled cooling water inlet and outlet pair and the corresponding cooling domain and heat pipe, the mass flow rate q of the secondary temperature-controlled cooling water at the current moment m2 Set it according to the following formula:

[0013]

[0014] In the formula, Indicates the mass flow rate of the secondary temperature control cooling water at the current moment, C p represents the specific heat capacity of the secondary temperature control cooling water, T wc represents the wall temperature of the heat pipe condensation end at the current moment collected by the second temperature sensor, T s Indicates the temperature of the cooling zone at the current moment collected by the first temperature sensor, It represents the mass flow rate of primary temperature-controlled water, and P represents the exposure power.

[0015] The working temperature of the heat pipe is the saturated vapor temperature of the working liquid. The adjustment of the saturated vapor temperature can be achieved by changing the pressure in the heat pipe.

[0016] 2. A heat dissipation control method using the above-mentioned real-time heat dissipation chuck device

[0017] The heat dissipation control method comprises the following steps:

[0018] S1, when the silicon wafer begins to be exposed, open two first-level temperature-controlled water inlets;

[0019] S2, obtaining the position of the exposure unit area currently exposed, opening the secondary temperature control cooling water inlet and outlet pair corresponding to the lower heat pipe, and closing other secondary temperature control cooling water inlet and outlet pairs;

[0020] S3, during the exposure process, the mass flow rate of the secondary temperature-controlled cooling water is controlled in real time according to the tube wall temperature of the heat pipe condensation end collected by the second temperature sensor and the temperature of the cooling domain collected by the first temperature sensor;

[0021] In step S3, the mass flow rate of the secondary temperature-controlled cooling water at the current moment is set according to the following formula:

[0022]

[0023] In the formula, Indicates the mass flow rate of the secondary temperature control cooling water at the current moment, C p represents the specific heat capacity of the secondary temperature control cooling water, Twc represents the wall temperature of the heat pipe condensation end at the current moment collected by the second temperature sensor, T s Indicates the temperature of the cooling zone at the current moment collected by the first temperature sensor, represents the mass flow rate of primary temperature-controlled water, and P represents the exposure power;

[0024] S4. After the exposure of the current exposure unit area is completed, if the exposure of the silicon wafer is not completed, the next moment is taken as the current moment and the process goes to step S2. If the exposure of the silicon wafer is completed, all secondary temperature-controlled cooling water inlet and outlet pairs and the primary temperature-controlled water inlet are closed.

[0025] 3. A photolithography machine

[0026] The photolithography machine includes the above-mentioned real-time heat dissipation chuck device.

[0027] The beneficial effects of the present invention are:

[0028] 1. The present invention is based on a real-time heat dissipation chuck device and a heat dissipation control method, and utilizes the basic characteristics of heat pipes such as high thermal conductivity and excellent isothermal properties when working, which can not only achieve efficient heat dissipation effect in the exposure domain of silicon wafers, but also maintain the stability and uniformity of the temperature in the non-exposure domain. This overcomes the disadvantages of low cooling efficiency of the previous heat dissipation chuck and thermal interference to the non-exposure domain when cooling the exposure domain.

[0029] 2. The present invention is applied to a photolithography machine, and can maintain the stability and uniformity of the silicon wafer temperature under exposure conditions, thereby reducing the thermal deformation of the silicon wafer and improving the overlay accuracy; in particular, in an immersion photolithography machine, since the silicon wafer temperature serves as one of the thermal boundaries of the immersion flow field, the improvement of the silicon wafer temperature stability and uniformity helps to maintain the stability and uniformity of the immersion flow field temperature, thereby improving the optical properties of the immersion flow field as a liquid lens, and further improving the exposure yield and productivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a structural schematic diagram of a real-time heat dissipation chuck device involved in an embodiment of the present invention;

[0031] Figure 2 is a top view of a flow channel component of a real-time heat dissipation chuck device according to an embodiment of the present invention;

[0032] Figure 3 is a top view of a heat pipe component of a real-time heat dissipation chuck device according to an embodiment of the present invention;

[0033] Figure 4 is a top view of a real-time heat dissipation chuck device according to an embodiment of the present invention;

[0034] Figure 5 is an AA cross-sectional view of a real-time heat dissipation chuck device according to an embodiment of the present invention;

[0035] Figure 6 is a BB cross-sectional view of the real-time heat dissipation chuck device in an embodiment of the present invention;

[0036] Figure 7 Schematic diagram of the working principle of the heat pipe in the real-time heat dissipation chuck device in an embodiment of the present invention;

[0037] Figure 8 It is a flow chart of the related solenoid valve control method in the flow channel component in an embodiment of the present invention.

[0038] In the figure, 1. flow channel component cover plate, 2. silicon wafer, 3. flow channel component, 4. heat pipe component, 201. exposure unit area, 301. annular temperature-controlled water flow channel, 302. annular vacuum interlayer, 303. first temperature sensor, 304. temperature sensor, 401. heat pipe. DETAILED DESCRIPTION

[0039] The present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0040] A first aspect of the present invention provides a real-time heat dissipation chuck device for real-time heat dissipation of a silicon wafer 2 during an exposure process.

[0041] like Figure 1 As shown, the real-time heat dissipation chuck device includes a cover plate 1, a flow channel component 3 and a heat pipe component 4 which are stacked in sequence from top to bottom.

[0042] A silicon wafer 2 is placed horizontally above the flow channel component 3, and the bottom surface of the silicon wafer 2 is in contact with the top surface of the middle of the flow channel component 3. The flow channel component 3 includes an annular flow channel, and a cover plate 1 with a horizontal cross-section of an annular shape is covered above the annular flow channel. The annular flow channel and the cover plate 1 are arranged around the silicon wafer 2, that is, arranged on the circumferential outer side of the silicon wafer 2.

[0043] Preferably, a circular groove is provided in the center of the top surface of the flow channel component 3, and the silicon wafer 2 is placed in the circular groove. The horizontal cross section of the cover plate 1 is annular, that is, the cover plate 1 is an annular cover plate, so that the upper surface of the silicon wafer 2 can be exposed.

[0044] In a specific implementation, a certain gap is usually left between the outer circumference of the silicon wafer 2 and the inner circumference of the annular flow channel.

[0045] A heat pipe component 4 is arranged below the flow channel component 3. The heat pipe component 4 includes a heat pipe array. The heat pipe array is mainly composed of a plurality of heat pipes 401 arranged along a rectangular array. The heat pipe array extends below the annular flow channel along its own row direction. The top surface of the silicon wafer 2 is divided into an exposure area and a non-exposure area. The effective heat transfer area of ​​the heat pipe array covers the exposure area of ​​the top surface of the silicon wafer 2. Among them, the effective heat transfer area of ​​the heat pipe refers to the area where the heat pipe can transfer heat when working.

[0046] like Figure 3 As shown, the heat pipe array is mainly composed of 2N heat pipes 401 arranged in a rectangular array of N rows and two columns. Each heat pipe 401 is arranged along the row direction of the heat pipe array. The two columns of heat pipes 401 are arranged symmetrically, and the symmetry axes of the two columns of heat pipes 401 are parallel to the column direction of the heat pipe array. Figure 1 As shown, the heat pipe component 4 also includes a heat pipe mounting plate, and a plurality of heat pipe mounting grooves are provided on the top surface of the heat pipe mounting plate, and a heat pipe 401 is correspondingly embedded in each heat pipe mounting groove, and the heat pipe mounting groove matches the width of the heat pipe 401. The radial cross section of the heat pipe 401 is rectangular, and the upper wall surface of each heat pipe 401 contacts the bottom surface of the flow channel component 3 and is arranged in a tightly fitting manner.

[0047] like Figure 4 As shown, the exposure area on the top surface of the silicon wafer 2 is divided into a plurality of exposure unit areas 201, and the exposure unit areas 201 are evenly arranged in a rectangular grid in the exposure area. After exposure and subsequent process steps, each exposure unit area 201 will form an independent die. Figure 1 and Figure 5 As shown, a plurality of exposure unit areas 201 are arranged above each heat pipe 401 along its length direction, and the width of the effective heat transfer area of ​​the upper wall of each heat pipe 401 in the column direction of the heat pipe array matches the size of the exposure unit area 201 in the column direction of the heat pipe array, so that the projection of the effective heat transfer area of ​​each heat pipe 401 on the silicon wafer 2 coincides with the corresponding plurality of exposure unit areas.

[0048] like Figure 2 As shown, the flow channel component 3 includes an annular temperature-controlled water flow channel 301 and an annular vacuum interlayer 302. The annular vacuum interlayer 302 is arranged between the annular temperature-controlled water flow channel 301 and the silicon wafer 2, that is, the annular vacuum interlayer 302 is arranged on the radial outer side of the silicon wafer 2, and the annular temperature-controlled water flow channel 301 is arranged on the radial outer side of the annular vacuum interlayer 302. The annular vacuum interlayer 302 reduces the influence of the temperature-controlled cooling water introduced into the annular temperature-controlled water flow channel 301 on the temperature stability and uniformity of the silicon wafer 2 through vacuum treatment.

[0049] Two primary temperature-controlled water inlets and two secondary temperature-controlled cooling water inlet and outlet groups are provided on the annular temperature-controlled water flow channel 301. The two primary temperature-controlled water inlets are arranged symmetrically along the radial direction, and the axis of symmetry is parallel to the row direction of the heat pipe array. The two secondary temperature-controlled cooling water inlet and outlet groups are arranged symmetrically along the radial direction, and the axis of symmetry is parallel to the column direction of the heat pipe array. Each secondary temperature-controlled cooling water inlet and outlet group is composed of N secondary temperature-controlled cooling water inlet and outlet pairs, and the secondary temperature-controlled cooling water outlet and the secondary temperature-controlled cooling water inlet in each secondary temperature-controlled cooling water inlet and outlet pair are arranged adjacently and spaced apart.

[0050] Preferably, two annular grooves are provided on the outer side of the top surface of the flow channel component 3. The annular groove located radially inside and the upper cover plate 1 form an annular vacuum interlayer 302, and the annular groove located radially outside and the upper cover plate 1 form an annular temperature-controlled water flow channel 301.

[0051] Furthermore, each secondary temperature-controlled cooling water inlet and outlet are aligned, and a section of annular temperature-controlled water flow channel 301 between the secondary temperature-controlled cooling water inlet and the secondary temperature-controlled cooling water outlet forms a cooling domain. The cooling domain corresponds to the heat pipe 401 one by one, and each cooling domain is arranged above the outer end of the corresponding heat pipe 401, and the end of the heat pipe 401 located below the corresponding cooling domain forms a condensation end.

[0052] The cooling domain corresponding to the same secondary temperature-controlled cooling water inlet and outlet pair matches the width of the heat pipe 401 in the column direction of the heat pipe array, so that the cooling domain is aligned with the condensation end of the corresponding heat pipe 401 in the upper and lower directions.

[0053] Each secondary temperature-controlled cooling water inlet and outlet is aligned, and the central axes of the secondary temperature-controlled cooling water inlet and the secondary temperature-controlled cooling water outlet are parallel to the row direction of the heat pipe array.

[0054] Furthermore, each secondary temperature-controlled cooling water inlet is connected to a solenoid valve and is controlled by the solenoid valve. Each secondary temperature-controlled cooling water outlet is connected to a solenoid valve and is controlled by the solenoid valve. Each primary temperature-controlled water inlet is connected to a solenoid valve and is controlled by the solenoid valve.

[0055] Furthermore, the flow channel component 3 also includes a first temperature sensor 303 and a second temperature sensor 304. A first temperature sensor 303 is correspondingly installed at the central position of the inner wall of each cooling domain, and the temperature measuring end of the first temperature sensor 303 is in contact with the fluid in the cooling domain, which is used to monitor the temperature of the cooling domain in real time. A second temperature sensor 304 is correspondingly installed at the central position of the outer bottom surface of each cooling domain, and the temperature measuring end of the second temperature sensor 304 is in contact with the tube wall of the corresponding heat pipe 401, preferably the upper tube wall, which is used to monitor the tube wall temperature of the condensation end of each heat pipe 401 in real time.

[0056] In a specific implementation, the first temperature sensor 303 and the second temperature sensor 304 are both high-precision temperature sensors.

[0057] Furthermore, the primary temperature-controlled water inlet and the secondary temperature-controlled cooling water inlet are used to inject primary temperature-controlled water and secondary temperature-controlled cooling water into the annular temperature-controlled water flow channel 301 , respectively.

[0058] Preferably, both the primary temperature-controlled water and the secondary temperature-controlled cooling water are high-precision temperature-controlled water.

[0059] Furthermore, the temperature of the primary temperature-controlled water, the operating temperature of the heat pipe 401 and the optimal operating temperature of the silicon wafer 2 are equal. The temperature of the secondary temperature-controlled cooling water is lower than the temperature of the primary temperature-controlled water.

[0060] For each secondary temperature control cooling water inlet and outlet pair and the corresponding cooling domain and heat pipe 401, the mass flow rate q of the secondary temperature control cooling water at the current moment m2 Set it according to the following formula:

[0061]

[0062] In the formula, Indicates the mass flow rate of the secondary temperature control cooling water at the current moment, C p represents the specific heat capacity of the secondary temperature control cooling water, T wc represents the tube wall temperature of the condensation end of the heat pipe 401 at the current moment collected by the second temperature sensor 304, T s represents the temperature of the cooling zone at the current moment collected by the first temperature sensor 303, It represents the mass flow rate of primary temperature-controlled water, and P represents the exposure power.

[0063] In a specific implementation, the difference between the temperature of the secondary temperature-controlled cooling water and the temperature of the primary temperature-controlled water should be within a reasonable range so that the heat transfer efficiency of the heat pipe meets the corresponding requirements. Specifically, the temperature value of the secondary temperature-controlled cooling water is determined through a finite number of experiments. The process of determining the temperature of the secondary temperature-controlled cooling water through a finite number of experiments is as follows: the target tube wall temperature of the condensation end of the heat pipe 401 is set according to the target heat transfer efficiency of the heat pipe 401, and the mass flow rate of the secondary temperature-controlled cooling water, the mass flow rate of the primary temperature-controlled water, and the target temperature of the cooling domain are determined according to the above formula. Change the temperature of the secondary temperature-controlled cooling water and keep other parameters unchanged until the difference between the actual temperature of the cooling domain and the target temperature is less than the preset threshold, and use the temperature of the secondary temperature-controlled cooling water at this time as the temperature value of the secondary temperature-controlled cooling water.

[0064] The working temperature of the heat pipe 401 is specifically the saturated vapor temperature of the working liquid, and the adjustment of the saturated vapor temperature can be achieved by changing the pressure in the heat pipe 401. The present invention adjusts the pressure in the heat pipe 401 so that the saturated vapor temperature of the working liquid is the optimal working temperature of the silicon wafer, and utilizes the basic characteristics of the heat pipe 401 such as high thermal conductivity and excellent isothermal performance when working, so as to achieve efficient heat dissipation effect in the exposure domain of the silicon wafer while maintaining the stability and uniformity of the temperature in the non-exposure domain.

[0065] The working liquid may be a liquid with a working temperature below 100° C., including but not limited to ethanol and acetone.

[0066] As an optional implementation scheme of the present invention, the real-time heat dissipation chuck device is integrally formed by 3D printing.

[0067] As an optional implementation scheme of the present invention, the cover plate 1, the flow channel component 3 and the heat pipe component 4 of the real-time heat dissipation chuck device are respectively manufactured by mechanical processing, and assembled and connected according to the following assembly method: first, the heat pipe mounting grooves of the heat pipe component 4 are aligned and arranged one-to-one with the cooling domain of the flow channel component 3, and then the flow channel component 3 is placed above the heat pipe component 4 to fix the flow channel component 3 and the heat pipe component 4 together; then, the heat pipes 401 are assembled one-to-one with the heat pipe mounting grooves, that is, the heat pipes 401 are placed in each heat pipe mounting groove, and the upper wall surface of each heat pipe 401 is close to the lower wall surface of the flow channel component 3 to ensure efficient heat transfer; finally, the silicon wafer 2 is placed in the circular groove in the center of the flow channel component 3, and the exposure unit area on the silicon wafer 2 is aligned and arranged one-to-one with the cooling domain of the flow channel component 3.

[0068] A second aspect of the present invention provides a heat dissipation control method using the above-mentioned real-time heat dissipation chuck device. The heat dissipation control method of the present invention comprises the following steps:

[0069] S1, silicon wafer 2 begins exposure, and two first-level temperature-controlled water inlets are opened;

[0070] S2, obtaining the position of the exposure unit area 201 currently performing exposure processing according to the real-time data of the exposure scanning movement, opening the secondary temperature-controlled cooling water inlet and outlet pair corresponding to the heat pipe 401 directly below the exposure unit area 201 (i.e., located above its outer end), and closing other secondary temperature-controlled cooling water inlet and outlet pairs;

[0071] S3. During the exposure process, the mass flow rate of the secondary temperature-controlled cooling water is controlled in real time according to the tube wall temperature of the condensation end of the heat pipe 401 collected by the second temperature sensor 304 and the temperature of the cooling domain collected by the first temperature sensor 303.

[0072] In step S3, the mass flow rate of the secondary temperature-controlled cooling water at the current moment is set according to the following formula:

[0073]

[0074] In the formula, Indicates the mass flow rate of the secondary temperature control cooling water at the current moment, C p represents the specific heat capacity of the secondary temperature control cooling water, T wc represents the tube wall temperature of the condensation end of the heat pipe 401 at the current moment collected by the second temperature sensor 304, T s represents the temperature of the cooling zone at the current moment collected by the first temperature sensor 303, It represents the mass flow rate of primary temperature-controlled water, and P represents the exposure power.

[0075] S4. After the exposure of the current exposure unit area 201 is completed, if the exposure of the silicon wafer 2 is not completed, the next moment is taken as the current position and the process returns to step S2. If the exposure of the silicon wafer 2 is completed, all secondary temperature-controlled cooling water inlet and outlet pairs and the primary temperature-controlled water inlet are closed.

[0076] Preferably, all exposure unit areas 201 are exposed row by row, and during the exposure process of each row, the scanning direction is parallel to the row direction of the heat pipe array.

[0077] The specific embodiments of the present invention are as follows:

[0078] This embodiment takes a real-time heat dissipation chuck device with 12 heat pipes 401 as an example. The 12 heat pipes 401 are arranged in a rectangular array of 6 rows and 2 columns. In this embodiment, the left-right direction is used as the row direction of the heat pipe array.

[0079] like Figure 3 As shown, 12 heat pipe installation grooves are opened on the top surface of the heat pipe component 4, namely, heat pipe installation grooves 11_c to 61_c on the left side and heat pipe installation grooves 1r_c to 6r_c on the right side.

[0080] like Figure 4 As shown, the exposure unit areas 201 on the silicon wafer 2 are respectively: exposure unit areas 11-3 to 11-4 corresponding to the heat pipe 401 in the heat pipe mounting groove 11_c; exposure unit areas 1r-1 to 1r-2 corresponding to the heat pipe 401 in the heat pipe mounting groove 1r_c; exposure unit areas 21-4 to 21-6 corresponding to the heat pipe 401 in the heat pipe mounting groove 21_c; exposure unit areas 2r-1 to 2r-3 corresponding to the heat pipe 401 in the heat pipe mounting groove 2r_c; exposure unit areas 3l-5 to 3l-8 corresponding to the heat pipe 401 in the heat pipe mounting groove 3l_c; exposure unit areas 3l-7 to 3l-9 corresponding to the heat pipe 401 in the heat pipe mounting groove 3r_c Domains 3r-1 to 3r-4; exposure unit areas 4l-5 to 4l-8 corresponding to the heat pipe 401 in the heat pipe mounting groove 4l_c; exposure unit areas 4r-1 to 4r-4 corresponding to the heat pipe 401 in the heat pipe mounting groove 4r_c; exposure unit areas 5l-4 to 5l-6 corresponding to the heat pipe 401 in the heat pipe mounting groove 5l_c; exposure unit areas 5r-1 to 5r-3 corresponding to the heat pipe 401 in the heat pipe mounting groove 5r_c; exposure unit areas 6l-3 to 6l-4 corresponding to the heat pipe 401 in the heat pipe mounting groove 6l_c; exposure unit areas 6r-6 to 6r-2 corresponding to the heat pipe 401 in the heat pipe mounting groove 6r_c.

[0081] like Figure 2As shown, the annular temperature-controlled water channel 301 is provided with two primary temperature-controlled water inlets HPTCW_in, as well as 12 secondary temperature-controlled cooling water outlets and 12 secondary temperature-controlled cooling water inlets distributed on the circumference of the annular channel 301, and the two secondary temperature-controlled cooling water inlet and outlet groups located on the left and right sides are symmetrically arranged.

[0082] During the heat dissipation process, the first-level high-precision temperature-controlled water is injected from the two first-level temperature-controlled water inlets HPTCW_in. The second-level high-precision temperature-controlled cooling water is injected or flows out through any second-level temperature-controlled cooling water inlet and outlet pair, so that a cooling domain is formed between the same second-level temperature-controlled cooling water inlet and outlet pair.

[0083] For the secondary temperature-controlled cooling water inlet and outlet group located on the left side: the first left secondary temperature-controlled cooling water inlet 1l_in and the first left secondary temperature-controlled cooling water outlet 1l_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_1l, corresponding to the heat pipe 401 in the heat pipe installation groove 1l_c and the exposure unit area 1l-3~1l-4; the second left secondary temperature-controlled cooling water inlet 2l_in and the second left secondary temperature-controlled cooling water outlet 2l_out form a A pair of secondary temperature-controlled cooling water inlets and outlets, a section of annular flow channel 301 between the two forms a cooling domain C_2l, corresponding to the heat pipe 401 in the heat pipe installation groove 2l_c and the exposure unit area 2l-4 to 2l-6; the third left secondary temperature-controlled cooling water inlet 3l_in and the third left secondary temperature-controlled cooling water outlet 3l_out form a pair of secondary temperature-controlled cooling water inlets and outlets, a section of annular flow channel 301 between the two forms a cooling domain C_3l, corresponding to the heat pipe 401 in the heat pipe installation groove 3l_c and the exposure unit area 1 3l-5~3l-8; the fourth left secondary temperature-controlled cooling water inlet 4l_in and the fourth left secondary temperature-controlled cooling water outlet 4l_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_4l, corresponding to the heat pipe 401 in the heat pipe installation groove 4l_c and the exposure unit area 4l-5~4l-8; the fifth left secondary temperature-controlled cooling water inlet 5l_in and the fifth left secondary temperature-controlled cooling water outlet 5l_out form a secondary temperature-controlled cooling water inlet and outlet A section of the annular flow channel 301 between the two forms a cooling domain C_5l, corresponding to the heat pipe 401 in the heat pipe mounting groove 5l_c and the exposure unit areas 5l-4 to 5l-6; the sixth left secondary temperature-controlled cooling water inlet 6l_in and the sixth left secondary temperature-controlled cooling water outlet 6l_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of the annular flow channel 301 between the two forms a cooling domain C_6l, corresponding to the heat pipe 401 in the heat pipe mounting groove 6l_c and the exposure unit areas 6l-3 to 6l-4.

[0084] For the secondary temperature-controlled cooling water inlet and outlet group on the right:

[0085] The first right secondary temperature-controlled cooling water inlet 1r_in and the first right secondary temperature-controlled cooling water outlet 1r_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_1r, corresponding to the heat pipe 401 in the heat pipe installation groove 1r_c and the exposure unit area 1r-1~1r-2;

[0086] The second right secondary temperature-controlled cooling water inlet 2r_in and the second right secondary temperature-controlled cooling water outlet 2r_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_2r, corresponding to the heat pipe 401 in the heat pipe installation groove 2r_c and the exposure unit areas 2r-1 to 2r-3;

[0087] The third right secondary temperature-controlled cooling water inlet 3r_in and the third right secondary temperature-controlled cooling water outlet 3r_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_3r, corresponding to the heat pipe 401 in the heat pipe installation groove 3r_c and the exposure unit areas 3r-1 to 3r-4;

[0088] The fourth right secondary temperature-controlled cooling water inlet 4r_in and the fourth right secondary temperature-controlled cooling water outlet 4r_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_4r, corresponding to the heat pipe 401 in the heat pipe installation groove 4r_c and the exposure unit areas 4r-1 to 4r-4;

[0089] The fifth right secondary temperature-controlled cooling water inlet 5r_in and the fifth right secondary temperature-controlled cooling water outlet 5r_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_5r, corresponding to the heat pipe 401 in the heat pipe installation groove 5r_c and the exposure unit areas 5r-1 to 5r-3;

[0090] The sixth right secondary temperature-controlled cooling water inlet 6r_in and the sixth right secondary temperature-controlled cooling water outlet 6r_out form a secondary temperature-controlled cooling water inlet and outlet pair, and a section of annular flow channel 301 between the two forms a cooling domain C_6r, corresponding to the heat pipe 401 in the heat pipe installation groove 6r_c and the exposure unit area 6r-6~6r-2.

[0091] like Figure 1 to Figure 6As shown, the width of the effective heat transfer area on the upper wall of the heat pipe 401 matches the width of the exposure unit area 201, and the width of the heat pipe installation grooves 1l_c~6l_c and the heat pipe installation grooves 1r_c~6r_c match the width of each heat pipe 401. Each secondary temperature-controlled cooling water inlet and outlet are aligned, and the spacing between the secondary temperature-controlled cooling water outlet and the secondary temperature-controlled cooling water inlet matches the width of the heat pipe installation groove, so that the width of the cooling domains C_1l~C_6l and the cooling domains C_1r~C_6r match the width of each heat pipe 401.

[0092] like Figure 6 As shown, 12 high-precision temperature sensors 303 are respectively integrated in the central position of the inner wall of the cooling domains C_11~C_61 and the cooling domains C_1r~C_6r, and are used to monitor the temperature of the cooling water in the corresponding cooling domains in real time. 12 high-precision temperature sensors 304 are respectively integrated in the central position of the outer bottom surface of the cooling domains C_11~C_61 and the cooling domains C_1r~C_6r, and the temperature measuring probes are closely attached to the upper tube wall of the corresponding heat pipe 401 below, and are used to monitor the tube wall temperature of the condensation end of the corresponding heat pipe 401 in real time.

[0093] This embodiment also provides an assembly method for the real-time heat dissipation chuck device, and the specific process is as follows:

[0094] First, after aligning the heat pipe installation grooves 1l_c~6l_c and the heat pipe installation grooves 1r_c~6r_c of the heat pipe component 4 with the cooling domains C_1l~C_6l and the cooling domains C_1r~C_6r of the flow channel component 3 in a one-to-one correspondence, the flow channel component 3 is placed above the heat pipe component 4;

[0095] Subsequently, 12 heat pipes 401 are assembled one by one with the heat pipe mounting grooves 11_c~61_c and the heat pipe mounting grooves 1r_c~6r_c, and the upper wall of each heat pipe 401 is closely attached to the lower wall of the flow channel component 3 to ensure efficient heat transfer;

[0096] Finally, the silicon wafer 2 is placed in the circular groove in the center of the flow channel component 3, and the exposure unit areas 1r-1~1r-2, 1l-3~1l-4, ..., 6r-1~6r-2, 6l-3~6l-4 on the silicon wafer 2 are aligned one by one with the cooling domains C_1l~C_6l and cooling domains C_1r~C_6r of the flow channel component 3.

[0097] The present invention assembles a flow channel component and its cover plate 1 which integrates a high-precision temperature sensor (a first temperature sensor 303 and a second temperature sensor 304), is provided with an annular vacuum interlayer 302 and an annular temperature-controlled water flow channel 301, and a heat pipe component composed of a plurality of heat pipes 401 arranged side by side in a specified manner to form a real-time heat dissipation chuck device.

[0098] This embodiment further describes the control method for opening and closing each solenoid valve in the annular temperature-controlled water channel 301 in combination with the above-mentioned chuck. On the basis of the real-time heat dissipation chuck device, the opening and closing of each inlet and outlet solenoid valve and the cooling water flow rate on the annular temperature-controlled water channel 301 are controlled by the real-time heat dissipation control method. On the one hand, the condensation end of the heat pipe 401 corresponding to the exposure domain is provided with a secondary high-precision temperature-controlled cooling water with a cooling power equal to the exposure power. On the other hand, the condensation end of the heat pipe corresponding to the non-exposure domain is provided with a primary high-precision temperature-controlled water with a temperature equal to the optimal working temperature of the silicon wafer. Based on the basic characteristics of the heat pipe at work, the two functions achieved by the real-time heat dissipation control method can respectively achieve the effects of efficient heat dissipation in the exposure domain of the silicon wafer and further maintaining the temperature stability and uniformity in the non-exposure domain.

[0099] Heat dissipation control methods such as Figure 8 As shown, specifically: after the silicon wafer exposure starts, the electromagnetic valves corresponding to the two primary temperature-controlled water inlets are opened, and temperature-controlled water is injected into the annular temperature-controlled water channel 301. Thereafter, the specific position of the exposure unit area 201 currently being exposed is determined based on the acquired real-time data of the exposure scanning motion. If the exposure unit area is located in the 1r area (i.e., the exposure unit area 1r-1 to 1r-2) at this moment, the electromagnetic valves corresponding to the secondary temperature-controlled cooling water inlet 1r_in and the secondary temperature-controlled cooling water outlet 1r_out on the annular temperature-controlled water channel 301 are opened, and the electromagnetic valves corresponding to the remaining secondary temperature-controlled cooling water inlets and outlets are closed. After the exposure of the current exposure unit area is completed, the exposure unit area to be exposed at the next moment is determined again until the exposure is completed, and finally all the electromagnetic valves are closed.

[0100] In the above process, when the exposure unit area is located in the 1r area, the first-level high-precision temperature-controlled water is injected from the two HPTCW_in and flows out from the second-level temperature-controlled cooling water outlet 1r_out, and the second-level high-precision temperature-controlled cooling water flows in from the second-level temperature-controlled cooling water inlet 1r_in and flows out from the second-level temperature-controlled cooling water outlet 1r_out. Therefore, at this time, only the cooling domain C_1r is in the low-temperature area, and the other cooling domains (cooling domains C_1l~C_6l, cooling domains C_2r~C_6r) still maintain the optimal working temperature T of the silicon wafer. t When the exposure unit area is located in the remaining areas (exposure unit areas 2r to 6r, exposure unit areas 11 to 61), the same is true.

[0101] like Figure 7 As shown, when all the exposure unit areas corresponding to the heat pipe 401 in the heat pipe installation groove 21-c are exposed sequentially from right to left, that is, the exposure unit areas 21-4 ( Figure 7 (a)), exposure unit area 21-5 ( Figure 7 (b)), exposure unit area 21-6 ( Figure 7When (c) is exposed, due to the accumulation of heat, the heat pipe end corresponding to the current exposure unit area (heat pipe 401 in heat pipe installation groove 21_c) will form an evaporation end; the low temperature area (cooling area C_21) formed by the injection of secondary high-precision temperature-controlled cooling water at the other end of the heat pipe 401 in the heat pipe installation groove 21_c will form a condensation end. At this time, the steam inside the heat pipe 401 will be at the working temperature T t Work to transport the exposure heat in time.

[0102] Figure 7 In the process, a temperature T is formed between the condensation end and the evaporation end. t When the exposure unit area 21-4 is exposed, the area forms an evaporation end. Since a temperature of T is formed between the condensation end and the evaporation end t Therefore, when the heat of the exposure unit area 21-4 is transported to the condensation end, it will not generate additional thermal interference to the unexposed unit areas 21-5 and 21-6, and will not affect the stability and uniformity of the temperature of the unexposed unit areas. For the unexposed heat pipe area, since its corresponding cooling area still maintains the optimal working temperature T of the silicon wafer, t At this time, the heat pipe 401 will compensate in real time for the small temperature fluctuations caused by other factors such as ambient temperature disturbance in the corresponding exposure unit area, so that the temperature distribution of the silicon wafer is more uniform and the temperature stability is further improved.

[0103] Therefore, this control method can, on the one hand, enable the heat deposited in the exposure unit area currently being exposed to be transported through the heat pipe in a timely manner, and on the other hand, can further improve the temperature stability and uniformity of the non-exposed area of ​​the silicon wafer.

[0104] It can be seen from this implementation that the present invention not only does not generate additional thermal interference to the unexposed area of ​​the silicon wafer while efficiently and real-time heat dissipation in the exposed area of ​​the silicon wafer, but also maintains the temperature stability and uniformity of the unexposed area of ​​the silicon wafer.

[0105] In the description of the positional relationship of the present invention, terms such as "inside", "outside", "up", "down", "left", "right", etc. that indicate orientation or positional relationship are based on the orientation or positional relationship shown in the drawings and are only for the convenience of describing the embodiments and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0106] The above content and structure describe the basic principle, main features and advantages of the product of the present invention, which should be understood by those skilled in the art. The above examples and descriptions are only for explaining the principle of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which are within the scope of the present invention. The scope of the present invention is defined by the attached claims and their equivalents.

Claims

1. A real-time heat dissipation chuck device for real-time heat dissipation of a silicon wafer (2), characterized in that: The real-time heat dissipation chuck device comprises a cover plate (1), a flow channel component (3) and a heat pipe component (4) which are sequentially stacked; a silicon wafer (2) is placed on the flow channel component (3); the flow channel component (3) comprises an annular flow channel, the annular flow channel is covered with a cover plate (1), and the annular flow channel is arranged around the silicon wafer (2); a heat pipe component (4) is arranged below the flow channel component (3); the heat pipe component (4) is mainly composed of a heat pipe array, and the heat pipe array is mainly composed of a plurality of heat pipes (401) arranged along a rectangular array, and the heat pipe array extends along its own row direction to below the annular flow channel.

2. The real-time heat dissipation chuck device according to claim 1, characterized in that: The effective heat transfer area of ​​the heat pipe array covers the exposure area on the top surface of the silicon wafer (2); the heat pipe array is mainly composed of 2N heat pipes (401) arranged in a rectangular array of N rows and two columns; each heat pipe (401) is arranged along the row direction of the heat pipe array; the upper wall surface of each heat pipe (401) is in contact with the bottom surface of the flow channel component (3); the exposure area on the upper surface of the silicon wafer (2) is divided into a plurality of exposure unit areas (201); a plurality of exposure unit areas (201) are arranged above each heat pipe (401) along its own length direction; the effective heat transfer area of ​​each heat pipe (401) matches the size of the exposure unit area (201) in the column direction of the heat pipe array.

3. The real-time heat dissipation chuck device according to claim 1, characterized in that: The flow channel component (3) comprises an annular temperature-controlled water flow channel (301) and an annular vacuum interlayer (302); the annular vacuum interlayer (302) is located between the annular temperature-controlled water flow channel (301) and the silicon wafer (2); the annular temperature-controlled water flow channel (301) is provided with two primary temperature-controlled water inlets and two secondary temperature-controlled cooling water inlet and outlet groups; the two primary temperature-controlled water inlets are arranged symmetrically along the radial direction; the two secondary temperature-controlled cooling water inlet and outlet groups are arranged symmetrically along the radial direction; each secondary temperature-controlled cooling water inlet and outlet group is composed of N secondary temperature-controlled cooling water inlet and outlet pairs, and the secondary temperature-controlled cooling water outlet and the secondary temperature-controlled cooling water inlet in each secondary temperature-controlled cooling water inlet and outlet pair are arranged adjacent to each other.

4. The real-time heat dissipation chuck device according to claim 3, characterized in that: Each secondary temperature-controlled cooling water inlet and outlet are aligned, and a section of annular temperature-controlled water flow channel (301) between the secondary temperature-controlled cooling water inlet and the secondary temperature-controlled cooling water outlet forms a cooling domain; the cooling domains correspond one-to-one to the heat pipes (401), and each cooling domain is located above the outer end of the corresponding heat pipe (401), forming a condensation end of the heat pipe (401).

5. The real-time heat dissipation chuck device according to claim 4, characterized in that: The flow channel component (3) also includes a first temperature sensor (303) and a second temperature sensor (304); a first temperature sensor (303) is correspondingly installed on the inner wall of each cooling domain, and is used to monitor the temperature of the cooling domain in real time; a second temperature sensor (304) is correspondingly installed on the outer bottom surface of each cooling domain, and the temperature measuring end of the second temperature sensor (304) is in contact with the tube wall of the heat pipe (401) below the cooling domain, and is used to monitor the tube wall temperature of the condensation end of each heat pipe (401).

6. The real-time heat dissipation chuck device according to claim 3, characterized in that: The primary temperature-controlled water inlet and the secondary temperature-controlled cooling water inlet are used to inject primary temperature-controlled water and secondary temperature-controlled cooling water into the annular temperature-controlled water flow channel (301), respectively; the temperature of the primary temperature-controlled water, the operating temperature of the heat pipe (401) and the optimal operating temperature of the silicon wafer (2) are equal, and the temperature of the secondary temperature-controlled cooling water is lower than the temperature of the primary temperature-controlled water; for each secondary temperature-controlled cooling water inlet and outlet pair and the corresponding cooling domain and heat pipe (401), the mass flow rate of the secondary temperature-controlled cooling water at the current moment Set it according to the following formula: In the formula, Indicates the mass flow rate of the secondary temperature control cooling water at the current moment, C p represents the specific heat capacity of the secondary temperature control cooling water, T wc represents the tube wall temperature of the condensation end of the heat pipe (401) at the current moment collected by the second temperature sensor (304), T s represents the temperature of the cooling zone at the current moment collected by the first temperature sensor (303), It represents the mass flow rate of primary temperature-controlled water, and P represents the exposure power.

7. The real-time heat dissipation chuck device according to claim 1, characterized in that: The working temperature of the heat pipe (401) is the saturated steam temperature of the working liquid, and the adjustment of the saturated steam temperature can be achieved by changing the pressure in the heat pipe (401).

8. A heat dissipation control method using the real-time heat dissipation chuck device according to any one of claims 1 to 7, characterized in that: The following steps are involved: S1. When the silicon wafer (2) starts to be exposed, two first-level temperature-controlled water inlets are opened; S2, obtaining the position of the exposure unit area (201) currently exposed, opening the secondary temperature-controlled cooling water inlet and outlet pair corresponding to the lower heat pipe (401), and closing other secondary temperature-controlled cooling water inlet and outlet pairs; S3, during the exposure process, the mass flow rate of the secondary temperature-controlled cooling water is controlled in real time according to the tube wall temperature of the condensation end of the heat pipe (401) collected by the second temperature sensor (304) and the temperature of the cooling zone collected by the first temperature sensor (303); S4. After the exposure of the current exposure unit area (201) is completed, if the exposure of the silicon wafer (2) is not completed, the next moment is taken as the current moment and the process goes to step S2. If the exposure of the silicon wafer (2) is completed, all secondary temperature-controlled cooling water inlet and outlet pairs and the primary temperature-controlled water inlet are closed.

9. The heat dissipation control method according to claim 8, characterized in that: In step S3, the mass flow rate of the secondary temperature-controlled cooling water at the current moment is set according to the following formula: In the formula, q m2 Indicates the mass flow rate of the secondary temperature control cooling water at the current moment, C p represents the specific heat capacity of the secondary temperature control cooling water, T wc represents the tube wall temperature of the condensation end of the heat pipe (401) at the current moment collected by the second temperature sensor (304), T s represents the temperature of the cooling zone at the current moment collected by the first temperature sensor (303), q m1 It represents the mass flow rate of primary temperature-controlled water, and P represents the exposure power.

10. A photolithography machine, characterized in that: It comprises a real-time heat dissipation chuck device as described in any one of claims 1 to 7.

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