Pattern measuring method
By using analog exposure layout to calculate the coordinates and contours of overlapping and unoverlapping regions in the electron microscope scanning picture of the semiconductor structure, selectively extracting the graphical contours, the accuracy of semiconductor structure size measurement is solved and the yield of semiconductor structure is improved .
Patent Information
- Application Number
- CN202411783349.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-05
- Publication Date
- 2025-02-21
Smart Images
Figure CN119493342A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor structure measurement, and in particular to a pattern measurement method. Background Art
[0002] The patterning process (photolithography technology) is used to transfer the designed layout to the surface of the wafer. It is a key process in the chip manufacturing process. The difference between the wafer surface pattern size and the mask layout is a key indicator to measure the performance of the patterning process. Usually, a scanning electron microscope (SEM) is used to collect SEM images of critical patterns and measure their critical dimensions (CD).
[0003] However, as the size of semiconductor structures becomes smaller and smaller, and the patterns of semiconductor structures become more and more complex, how to accurately measure the size of semiconductor structures is a problem that needs to be continuously solved. Summary of the invention
[0004] The technical problem solved by the present invention is to provide a graphic measurement method for accurately measuring the size of a semiconductor structure.
[0005] In order to solve the above technical problems, the technical solution of the present invention provides a graphic measurement method, including: providing a structure to be measured, the structure to be measured includes a first structure and a second structure located on the first structure; obtaining an electron microscope scanning image of the structure to be measured, the electron microscope scanning image includes a first graphic and a second graphic, the first graphic corresponds to the first structure, and the second graphic corresponds to the second structure; obtaining a first simulated exposure layout corresponding to the first structure, the first simulated exposure layout includes a first exposure graphic, and the size error between the first exposure graphic and the first graphic is within a preset range; obtaining a second simulated exposure layout corresponding to the second structure, the second simulated exposure layout includes a second exposure graphic, and the size error between the second exposure graphic and the second graphic is within a preset range; according to the second simulated exposure layout and the first simulated exposure layout, obtaining the coordinates and contours of the overlapping area and the non-overlapping area of the first exposure graphic and the second exposure graphic; according to the coordinates and contours of the non-overlapping area of the first exposure graphic and the second exposure graphic, selectively extracting the contour of the first graphic or the second graphic in the electron microscope scanning image.
[0006] Optionally, according to the second simulated exposure layout and the first simulated exposure layout, the coordinates and contours of the overlapping area and the non-overlapping area of the first exposure pattern and the second exposure pattern are obtained, including: performing difference processing on the first simulated exposure layout and the second simulated exposure layout, obtaining the coordinates and contours of the overlapping area of the first exposure pattern and the second exposure pattern, obtaining the coordinates and contours of the non-overlapping area of the first exposure pattern, and obtaining the coordinates and contours of the non-overlapping area of the second exposure pattern.
[0007] Optionally, the first simulated exposure layout and the second simulated exposure layout are subjected to difference processing, including: overlapping the first simulated exposure layout and the second simulated exposure layout to obtain an overlapping layout; using Boolean operations to obtain the coordinates and contours of the overlapping area of the first exposure pattern and the second exposure pattern, obtaining the coordinates and contours of the non-overlapping area of the first exposure pattern, and obtaining the coordinates and contours of the non-overlapping area of the second exposure pattern.
[0008] Optionally, based on the coordinates and contours of the non-overlapping area of the first exposure pattern and the second exposure pattern, the contour of the first pattern or the second pattern in the electron microscope scanning image is selectively extracted, including: obtaining the non-overlapping area of the first pattern and the second pattern in the electron microscope scanning image based on the coordinates and contours of the non-overlapping area of the first exposure pattern; obtaining the area of the second pattern in the electron microscope scanning image based on the non-overlapping area of the first pattern in the electron microscope scanning image; and extracting the contour of the second pattern.
[0009] Optionally, based on the coordinates and contours of the non-overlapping area of the first exposure pattern and the second exposure pattern, the contour of the first pattern or the second pattern in the electron microscope scanning image is selectively extracted, including: based on the coordinates and contours of the non-overlapping area of the first exposure pattern, obtaining the non-overlapping area of the first pattern and the second pattern in the electron microscope scanning image; based on the non-overlapping area of the first pattern in the electron microscope scanning image; extracting the contour of the first pattern.
[0010] Optionally, the method further includes: measuring the extracted contour of the first graphic or the second graphic.
[0011] Optionally, obtaining a first simulated exposure layout corresponding to the first structure includes: providing a first mask layout, the first mask layout being a mask design pattern for forming the first structure; performing simulated exposure on the first mask layout to obtain a first simulated exposure layout, the first simulated exposure layout including a first exposure pattern, and a size error between the first exposure pattern and the first pattern is within a preset range.
[0012] Optionally, obtaining a second simulated exposure layout corresponding to the second structure includes: providing a second mask layout, the second mask layout is a mask design pattern for forming the second structure; performing simulated exposure on the second mask layout to obtain a second simulated exposure layout, the second simulated exposure layout includes a second exposure pattern, and a size error between the second exposure pattern and the second pattern is within a preset range.
[0013] Optionally, the structure to be measured further includes: a third structure, and the third structure is located on the second structure; the electron microscope scanning image further includes a third graphic, and the third graphic corresponds to the third structure.
[0014] Optionally, it also includes: obtaining a third simulated exposure layout corresponding to the third structure, the third simulated exposure layout including a third exposure pattern; obtaining the coordinates and contours of overlapping areas and non-overlapping areas of the third simulated exposure layout, the first exposure pattern and the second exposure pattern according to the third simulated exposure layout, the second simulated exposure layout and the first simulated exposure layout; and selectively extracting the contour of the third pattern in the electron microscope scanning image according to the coordinates and contours of the non-overlapping areas of the third simulated exposure layout and the first exposure pattern and the second exposure pattern.
[0015] Optionally, before selectively extracting the contour of the first figure or the second figure in the electron microscope scanning image based on the coordinates and contours of the non-overlapping area of the first exposure figure and the second exposure figure, it also includes: performing noise reduction processing on the first figure or the second figure in the electron microscope scanning image.
[0016] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
[0017] The graphic measurement method of the present invention obtains the coordinates and contours of the overlapping area and the non-overlapping area of the first exposure graphic and the second exposure graphic according to the second simulated exposure layout and the first simulated exposure layout, and then selectively extracts the contour of the first graphic or the second graphic in the electron microscope scanning image according to the coordinates and contours of the non-overlapping area of the first exposure graphic and the second exposure graphic. The method locates the graphic area to be measured in the electron microscope scanning image by using the second simulated exposure layout and the first simulated exposure layout, and can accurately extract the contour of the graphic to be measured, thereby improving the accuracy of graphic measurement, and further accurately measuring the size of the semiconductor structure, thereby improving the yield of the semiconductor structure.
[0018] Furthermore, based on the contour and coordinates of the non-overlapping area of the first figure in the electron microscope scanning image, the contour and coordinates of the second figure area are obtained, and then based on the contour and coordinates of the second figure area, the contour of the second figure is extracted, so that when extracting the contour of the second figure, the influence of the first figure on the second figure can be eliminated, so that the contour extraction result of the second figure is accurate, avoiding the situation of reduced adjustable range of extraction parameters, incomplete contour extraction and incorrect contour edge extraction caused by multi-step noise reduction to eliminate the influence of the first figure, thereby improving work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 is a schematic diagram of measuring an electron microscope scanning image of a structure to be measured in one embodiment;
[0020] Figure 2 is a flow chart of a graphic measurement method in an embodiment of the present invention;
[0021] Figures 3 to 7 It is a structural schematic diagram of a graphic measurement method in an embodiment of the present invention. DETAILED DESCRIPTION
[0022] As described in the background art, how to accurately measure the size of a semiconductor structure is a problem that needs to be continuously solved. This is now analyzed and explained in conjunction with specific embodiments.
[0023] Figure 1 It is a schematic diagram of measuring an electron microscope scanning image of a structure to be measured in one embodiment.
[0024] Please refer to Figure 1 , Figure 1 It is a schematic diagram of an electron microscope scanning image of a structure to be measured, wherein the electron microscope scanning image includes a first graphic 101 and a second graphic 102, wherein the first graphic 101 corresponds to a first structure of the structure to be measured, and the second graphic 102 corresponds to a second structure of the structure to be measured, and the second structure is located above the first structure of the structure to be measured.
[0025] The first structure is formed before the second structure, and the second structure is formed on the first structure. Therefore, when an electron microscope is used to scan the surface of the structure to be measured that exposes the first structure and obtains an electron microscope scanning image, the underlying first structure will also be scanned in the electron microscope scanning image to obtain a first graphic 101.
[0026] Therefore, when measuring the second graphic 102 of the second structure according to the electron microscope scanning image, it is necessary to first extract the contour of the second graphic 102, and then measure the size of the contour of the second graphic 102. When extracting the contour of the second graphic 102, due to the existence of the first graphic 101, it is necessary to perform multi-step noise reduction on the electron microscope scanning image to eliminate the influence of the first graphic 101, which results in a reduction in the adjustable range of parameters for contour extraction of the second graphic 102, and incomplete contour extraction of the second graphic 102 (e.g., Figure 1 In addition, since the first graphic 101 and the second graphic 102 have overlapping areas, when the contour of the second graphic 102 is extracted, the contour of the overlapping area of the first graphic 101 and the second graphic 102 is likely to be protruding (such as Figure 1 As shown in the middle area B), the contour error of the extracted second graphic 102 is relatively large.
[0027] In order to solve the above problems, the technical solution of the present invention provides a method for measuring graphics, which obtains the coordinates and contours of the overlapping area and the non-overlapping area of the first exposure graphic and the second exposure graphic according to the second simulated exposure layout and the first simulated exposure layout, and then selectively extracts the contour of the first graphic or the second graphic in the electron microscope scanning image according to the coordinates and contours of the non-overlapping area of the first exposure graphic and the second exposure graphic. The method locates the graphic area to be measured in the electron microscope scanning image by using the second simulated exposure layout and the first simulated exposure layout, and can accurately extract the contour of the graphic to be measured, thereby improving the accuracy of graphic measurement, and then can accurately measure the size of the semiconductor structure, thereby improving the yield of the semiconductor structure.
[0028] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
[0029] Figure 2 1 is a flow chart of a graphic measurement method in an embodiment of the present invention.
[0030] Please refer to Figure 2 , the graphic measurement method comprises:
[0031] Step S10: providing a structure to be measured, wherein the structure to be measured includes a first structure and a second structure located on the first structure;
[0032] Step S20: obtaining an electron microscope scanning image of the structure to be measured, wherein the electron microscope scanning image includes a first graphic and a second graphic, wherein the first graphic corresponds to the first structure, and the second graphic corresponds to the second structure;
[0033] Step S30: obtaining a first simulated exposure layout corresponding to the first structure, wherein the first simulated exposure layout includes a first exposure pattern, and a size error between the first exposure pattern and the first pattern is within a preset range;
[0034] Step S40: obtaining a second simulated exposure layout corresponding to the second structure, wherein the second simulated exposure layout includes a second exposure pattern, and a size error between the second exposure pattern and the second pattern is within a preset range;
[0035] Step S50: acquiring coordinates and contours of overlapping areas and non-overlapping areas of the first exposure pattern and the second exposure pattern according to the second simulated exposure pattern and the first simulated exposure pattern;
[0036] Step S60: selectively extracting the outline of the first pattern or the second pattern in the electron microscope scanning image according to the coordinates and outline of the non-overlapping area of the first exposure pattern and the second exposure pattern.
[0037] The graphic measurement method obtains the coordinates and contours of the overlapping area and the non-overlapping area of the first exposure graphic and the second exposure graphic according to the second simulated exposure layout and the first simulated exposure layout, and then selectively extracts the contour of the first graphic or the second graphic in the electron microscope scanning image according to the coordinates and contours of the non-overlapping area of the first exposure graphic and the second exposure graphic. The method locates the graphic area to be measured in the electron microscope scanning image by using the second simulated exposure layout and the first simulated exposure layout, and can accurately extract the contour of the graphic to be measured, thereby improving the accuracy of graphic measurement, and further accurately measuring the size of the semiconductor structure, thereby improving the yield of the semiconductor structure.
[0038] Next, combine Figures 3 to 7 Each step is analyzed and explained. Figures 3 to 7 It is a structural schematic diagram of a graphic measurement method in an embodiment of the present invention.
[0039] Please continue to refer to Figure 2 , executing step S10: providing a structure to be measured, wherein the structure to be measured includes a first structure and a second structure located on the first structure.
[0040] In this embodiment, the structure to be measured includes: a substrate; the first structure is located on the substrate; and the second structure is located on the first structure.
[0041] Please combine Figure 3 Continue to refer Figure 2, execute step S20: obtain an electron microscope scanning image 200 of the structure to be measured, the electron microscope scanning image 200 includes a first graphic 201 and a second graphic 202, the first graphic 201 corresponds to the first structure, and the second graphic 202 corresponds to the second structure.
[0042] The first structure is formed on the substrate before the second structure, and the second structure is formed on the first structure. Therefore, when an electron microscope is used to scan the surface of the structure to be measured that exposes the first structure and obtains an electron microscope scanning image, the underlying first structure is also scanned to obtain a first graphic 201.
[0043] A scanning electron microscope (SEM) uses an electron beam to scan the surface of a structure to be measured, generating signals such as secondary electrons, and by detecting these signals, information such as the surface morphology and composition of the structure to be measured is obtained to obtain the electron microscope scanning image 200 .
[0044] Please combine Figure 4 Continue to refer Figure 2 , executing step S30: obtaining a first simulated exposure layout corresponding to the first structure, the first simulated exposure layout including a first exposure pattern 301, and a size error between the first exposure pattern 301 and the first pattern 201 is within a preset range.
[0045] Obtaining a first simulated exposure layout corresponding to the first structure includes: providing a first mask layout, wherein the first mask layout is a mask design pattern for forming the first structure; performing simulated exposure on the first mask layout to obtain a first simulated exposure layout, wherein the first simulated exposure layout includes a first exposure pattern 301, and a size error between the first exposure pattern 301 and the first pattern 201 is within a preset range.
[0046] The process of obtaining the first structure according to the first mask pattern includes: transferring the pattern of the first mask pattern to a mask plate; using the mask plate to expose and develop the photoresist on the wafer to obtain a photoresist pattern; etching the wafer using the photoresist pattern as a mask to form the first structure.
[0047] The formation process of the first mask layout includes: providing a first design layout; performing optical proximity effect correction on the first design layout to obtain a first mask layout, and the optical proximity effect correction process includes: performing simulated exposure on the first design layout to obtain a simulated exposure layout; obtaining an edge placement error between the simulated exposure layout and a target layout; if the edge placement error meets a preset range, obtaining the first mask layout; if the edge placement error does not meet the preset range, moving the line segment of the outline of the first design layout according to the edge placement error; and continuing to perform simulated exposure on the first design layout after the outline is moved until the edge placement error meets the preset range.
[0048] The first graphic 201 is the target graphic. The first mask layout is obtained after optical proximity effect correction. Therefore, the first simulated exposure layout is obtained by simulating exposure of the first mask layout. The size error between the first exposure graphic 301 of the first simulated exposure layout and the first graphic 201 is within a preset range.
[0049] Please combine Figure 5 Continue to refer Figure 2 , executing step S40: obtaining a second simulated exposure layout corresponding to the second structure, wherein the second simulated exposure layout includes a second exposure pattern 302, and a size error between the second exposure pattern 302 and the second pattern 202 is within a preset range.
[0050] Obtaining a second simulated exposure layout corresponding to the second structure includes: providing a second mask layout, where the second mask layout is a mask design pattern for forming the second structure; performing simulated exposure on the second mask layout to obtain a second simulated exposure layout, where the second simulated exposure layout includes a second exposure pattern 302, and a size error between the second exposure pattern 302 and the second pattern 202 is within a preset range.
[0051] The process of obtaining the second structure according to the second mask pattern includes: transferring the pattern of the second mask pattern to the mask plate; using the mask plate to expose and develop the photoresist on the wafer to obtain the photoresist pattern; etching the wafer using the photoresist pattern as a mask to form the second structure.
[0052] The formation process of the second mask layout includes: providing a second design layout; performing optical proximity effect correction on the second design layout to obtain a second mask layout, and the optical proximity effect correction process includes: performing simulated exposure on the second design layout to obtain a simulated exposure layout; obtaining an edge placement error between the simulated exposure layout and the target layout; if the edge placement error meets a preset range, obtaining a second mask layout; if the edge placement error does not meet the preset range, moving the line segment of the contour of the second design layout according to the edge placement error; and continuing to perform simulated exposure on the second design layout after the contour is moved until the edge placement error meets the preset range.
[0053] The second graphic 202 is the target graphic, and the second mask layout is obtained after optical proximity effect correction. Therefore, the second mask layout is subjected to simulated exposure to obtain a second simulated exposure layout, and the size error between the second exposure graphic 302 of the second simulated exposure layout and the second graphic 202 is within a preset range.
[0054] Please combine Figure 6 Continue to refer Figure 2 , executing step S50: acquiring coordinates and contours of overlapping areas and non-overlapping areas of the first exposure pattern 301 and the second exposure pattern 302 according to the second simulated exposure layout and the first simulated exposure layout.
[0055] According to the second simulated exposure layout and the first simulated exposure layout, the coordinates and contours of the overlapping area and the non-overlapping area of the first exposure pattern 301 and the second exposure pattern 302 are obtained, including: performing difference processing on the first simulated exposure layout and the second simulated exposure layout, obtaining the coordinates and contours of the overlapping area of the first exposure pattern 301 and the second exposure pattern 302, obtaining the coordinates and contours of the non-overlapping area of the first exposure pattern 301, and obtaining the coordinates and contours of the non-overlapping area of the second exposure pattern 302.
[0056] The first simulated exposure layout and the second simulated exposure layout are subjected to difference processing, including: overlapping the first simulated exposure layout and the second simulated exposure layout to obtain an overlapped layout; using Boolean operations to obtain the coordinates and contours of the overlapping area of the first exposure pattern and the second exposure pattern, to obtain the coordinates and contours of the non-overlapping area of the first exposure pattern, and to obtain the coordinates and contours of the non-overlapping area of the second exposure pattern.
[0057] The Boolean operation includes logical operations: performing logical operations such as AND (&&), OR (||), and NOT (!).
[0058] The coordinates and contours of the overlapping area of the first exposure pattern 301 and the second exposure pattern 302 are obtained, the coordinates and contours of the non-overlapping area of the first exposure pattern 301 are obtained, and the coordinates and contours of the non-overlapping area of the second exposure pattern 302 are obtained, and the logical operation includes NOT (!).
[0059] Please combine Figure 7 Continue to refer Figure 2 , executing step S60: selectively extracting the outline of the first figure 201 or the second figure 202 in the electron microscope scanning image according to the coordinates and outline of the non-overlapping area of the first exposure figure 301 and the second exposure figure 302.
[0060] In this embodiment, according to the coordinates and contours of the non-overlapping areas of the first exposure pattern 301 and the second exposure pattern 302, the contour of the first pattern 201 or the second pattern 202 in the electron microscope scanning image 200 is selectively extracted, including: according to the coordinates and contours of the non-overlapping areas of the first exposure pattern 301, the non-overlapping areas of the first pattern 201 and the second pattern 202 in the electron microscope scanning image 200 are obtained ( Figure 7 According to the non-overlapping area of the first graphic 201 in the electron microscope scanning image 200 ( Figure 7 (a) the area with a red outline in the middle (C), obtaining the area of the second graphic 202 in the electron microscope scanning image 200; and extracting the outline of the second graphic 202.
[0061] According to the coordinates and contours of the non-overlapping areas of the first exposure patterns 301, the non-overlapping areas of the first pattern 201 and the second pattern 202 in the electron microscope scanning image 200 are obtained, including: synchronizing the coordinates and contours of the non-overlapping areas of the first exposure patterns 301 to the electron microscope scanning image 200; based on the coordinates and contours of the non-overlapping areas of the first exposure patterns 301, obtaining the contour and coordinates of the non-overlapping areas of the first pattern 201 in the electron microscope scanning image 200; based on the contour and coordinates of the non-overlapping areas of the first pattern 201 in the electron microscope scanning image 200, obtaining the contour and coordinates of the area of the second pattern 202.
[0062] Based on the contour and coordinates of the area where the first figure 201 does not overlap in the electron microscope scanning image 200, the contour and coordinates of the area of the second figure 202 are obtained, and then based on the contour and coordinates of the area of the second figure 202, the contour of the second figure 202 is extracted. Therefore, when extracting the contour of the second figure 202, the influence of the first figure 201 on the second figure 202 can be eliminated, so that the contour extraction result of the second figure 202 is accurate, and the reduction in the adjustable range of extraction parameters, incomplete contour extraction and incorrect contour edge extraction caused by multi-step noise reduction to eliminate the influence of the first figure 201 are avoided, thereby improving work efficiency.
[0063] In this embodiment, before extracting the contour of the second graphic 202 , the process further includes: performing noise reduction processing on the second graphic 202 in the electron microscope scanning image 200 .
[0064] The noise reduction process can reduce the noise in the second graphic 202, making the contour of the second graphic 202 clearer and easier to extract.
[0065] In this embodiment, after extracting the contour of the second graphic 202, the method further includes: measuring the extracted contour of the second graphic 202. The method makes the measurement result of the second graphic 202 more accurate.
[0066] In other embodiments, the outline of the first figure or the second figure in the electron microscope scanning image is selectively extracted according to the coordinates and outline of the non-overlapping area of the first exposure figure and the second exposure figure, including: obtaining the non-overlapping area of the first figure and the second figure in the electron microscope scanning image according to the coordinates and outline of the non-overlapping area of the first exposure figure; extracting the outline of the first figure according to the non-overlapping area of the first figure in the electron microscope scanning image.
[0067] According to the coordinates and contours of the non-overlapping area of the second exposure pattern, the area where the second pattern and the first pattern do not overlap in the electron microscope scanning image is obtained, including: synchronizing the coordinates and contours of the non-overlapping area of the first exposure pattern to the electron microscope scanning image; based on the coordinates and contours of the non-overlapping area of the first exposure pattern, obtaining the contour and coordinates of the non-overlapping area of the first pattern in the electron microscope scanning image; based on the contour and coordinates of the non-overlapping area of the first pattern in the electron microscope scanning image, obtaining the contour of the non-overlapping area of the first pattern.
[0068] Based on the contour and coordinates of the non-overlapping area of the first graphic in the electron microscope scanning image, the contour and coordinates of the first graphic area are obtained, and then based on the contour and coordinates of the non-overlapping area of the first graphic, the contour of the first graphic is extracted. Therefore, when extracting the contour of the first graphic, the influence of the second graphic on the first graphic can be eliminated, so that the contour extraction result of the non-overlapping area of the first graphic is accurate, thereby improving work efficiency.
[0069] Before extracting the outline of the first figure, the method further includes: performing noise reduction processing on the first figure in the electron microscope scanning image. The noise reduction processing can reduce the noise in the first figure, making the outline of the first figure clearer and easier to extract.
[0070] After extracting the contour of the first figure, the method further includes: measuring the extracted contour of the first figure. The method makes the measurement result of the first figure more accurate.
[0071] In yet another embodiment, the structure to be measured further includes: a third structure, and the third structure is located on the second structure; the electron microscope scanning image further includes a third graphic, and the third graphic corresponds to the third structure.
[0072] The graphic measurement method also includes: obtaining a third simulated exposure layout corresponding to the third structure, the third simulated exposure layout including a third exposure pattern; obtaining coordinates and contours of overlapping areas and non-overlapping areas of the third simulated exposure layout, the first exposure pattern and the second exposure pattern according to the third simulated exposure layout, the second simulated exposure layout and the first simulated exposure layout; and selectively extracting the contour of the third pattern in the electron microscope scanning image according to the coordinates and contours of the non-overlapping areas of the third simulated exposure layout and the first exposure pattern and the second exposure pattern.
[0073] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.
Claims
1. A graphic measurement method, characterized in that: include: Providing a structure to be measured, wherein the structure to be measured includes a first structure and a second structure located on the first structure; Acquire an electron microscope scanning picture of the structure to be measured, wherein the electron microscope scanning picture includes a first figure and a second figure, wherein the first figure corresponds to the first structure, and the second figure corresponds to the second structure; Acquire a first simulated exposure layout corresponding to the first structure, wherein the first simulated exposure layout includes a first exposure pattern, and a size error between the first exposure pattern and the first pattern is within a preset range; Acquire a second simulated exposure layout corresponding to the second structure, wherein the second simulated exposure layout includes a second exposure pattern, and a size error between the second exposure pattern and the second pattern is within a preset range; According to the second simulated exposure layout and the first simulated exposure layout, obtaining coordinates and contours of overlapping areas and non-overlapping areas of the first exposure pattern and the second exposure pattern; According to the coordinates and contours of the non-overlapping area of the first exposure pattern and the second exposure pattern, the contour of the first pattern or the second pattern in the electron microscope scanning image is selectively extracted.
2. The graphic measurement method according to claim 1, characterized in that: According to the second simulated exposure layout and the first simulated exposure layout, the coordinates and contours of the overlapping area and the non-overlapping area of the first exposure pattern and the second exposure pattern are obtained, including: performing difference processing on the first simulated exposure layout and the second simulated exposure layout, obtaining the coordinates and contours of the overlapping area of the first exposure pattern and the second exposure pattern, obtaining the coordinates and contours of the non-overlapping area of the first exposure pattern, and obtaining the coordinates and contours of the non-overlapping area of the second exposure pattern.
3. The graphic measurement method according to claim 2, characterized in that: The first simulated exposure layout and the second simulated exposure layout are subjected to difference processing, including: overlapping the first simulated exposure layout and the second simulated exposure layout to obtain an overlapped layout; using Boolean operations to obtain the coordinates and contours of the overlapping area of the first exposure pattern and the second exposure pattern, to obtain the coordinates and contours of the non-overlapping area of the first exposure pattern, and to obtain the coordinates and contours of the non-overlapping area of the second exposure pattern.
4. The graphic measurement method according to claim 1, characterized in that: According to the coordinates and contours of the non-overlapping area of the first exposure pattern and the second exposure pattern, the contour of the first pattern or the second pattern in the electron microscope scanning image is selectively extracted, including: according to the coordinates and contours of the non-overlapping area of the first exposure pattern, obtaining the non-overlapping area of the first pattern and the second pattern in the electron microscope scanning image; according to the non-overlapping area of the first pattern in the electron microscope scanning image, obtaining the area of the second pattern in the electron microscope scanning image; extracting the contour of the second pattern.
5. The graphic measurement method according to claim 1, characterized in that: According to the coordinates and contours of the non-overlapping area of the first exposure pattern and the second exposure pattern, the contour of the first pattern or the second pattern in the electron microscope scanning image is selectively extracted, including: according to the coordinates and contours of the non-overlapping area of the first exposure pattern, obtaining the non-overlapping area of the first pattern and the second pattern in the electron microscope scanning image; according to the non-overlapping area of the first pattern in the electron microscope scanning image; extracting the contour of the first pattern.
6. The pattern measuring method according to claim 1, characterized in that: Also includes: The extracted contour of the first figure or the second figure is measured.
7. The pattern measuring method according to claim 1, characterized in that: Obtaining a first simulated exposure layout corresponding to the first structure includes: providing a first mask layout, wherein the first mask layout is a mask design pattern for forming the first structure; performing simulated exposure on the first mask layout to obtain a first simulated exposure layout, wherein the first simulated exposure layout includes a first exposure pattern, and a size error between the first exposure pattern and the first pattern is within a preset range.
8. The pattern measuring method according to claim 1, characterized in that: Obtaining a second simulated exposure layout corresponding to the second structure includes: providing a second mask layout, the second mask layout is a mask design pattern for forming the second structure; performing simulated exposure on the second mask layout to obtain a second simulated exposure layout, the second simulated exposure layout includes a second exposure pattern, and a size error between the second exposure pattern and the second pattern is within a preset range.
9. The pattern measuring method according to claim 1, characterized in that: The structure to be measured further includes: a third structure, and the third structure is located on the second structure; the electron microscope scanning image further includes a third figure, and the third figure corresponds to the third structure.
10. The pattern measuring method according to claim 9, characterized in that: Also includes: Acquire a third simulated exposure layout corresponding to the third structure, wherein the third simulated exposure layout includes a third exposure pattern; According to the third simulated exposure layout, the second simulated exposure layout and the first simulated exposure layout, the coordinates and contours of the overlapping areas and non-overlapping areas of the third simulated exposure layout, the first exposure pattern and the second exposure pattern are obtained; according to the coordinates and contours of the non-overlapping areas of the third simulated exposure layout and the first exposure pattern and the second exposure pattern, the contour of the third pattern in the electron microscope scanning image is selectively extracted.
11. The pattern measuring method according to claim 1, characterized in that: Before selectively extracting the outline of the first figure or the second figure in the electron microscope scanning image according to the coordinates and outline of the non-overlapping area of the first exposure figure and the second exposure figure, it also includes: performing noise reduction processing on the first figure or the second figure in the electron microscope scanning image.