Step-shaped electrode for semiconductor engineering

Abstract

The utility model discloses a step-shaped electrode for semiconductor engineering, which comprises an electrode, the electrode comprises a central disc and an annular sleeve block, the upper wall of the central disc is flush with the upper wall of the annular sleeve block, or the upper wall of the central disc is higher than the upper wall of the annular sleeve block, and the lower wall of the annular sleeve block is lower than the lower wall of the central disc. The side, close to the center disc, of the annular sleeve block is provided with an outwards-expanded slope. In the using process of the electrode, the lower wall of the whole electrode forms a step-shaped structure through the structure that the lower wall of the annular sleeve block is lower than the lower wall of the central disc, plasma on the lower side of the electrode is gathered, and the covering area of a lower opening of the electrode is increased through the outwards-expanded inclined face of the annular sleeve block. And the plasma convergence density is further improved, so that the plasma etching process efficiency is improved, and the etching efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a step-shaped electrode for semiconductor engineering. Background Art

[0002] As communications develop from 4G to 5G, and electronic industries such as smartphones become more and more developed, people's requirements for chips are getting higher and higher, and semiconductor process technology is also developing from 24 nanometers to 7 nanometers and 5 nanometers to further improve chip performance and capacity. This requires higher power and more complex processes. Correspondingly, in order to ensure the stability of the chip, the requirements for components required for the plasma process are also getting higher and higher.

[0003] In order to improve the activity of plasma and increase the etching rate, production efficiency and qualified rate in the semiconductor etching process, oxygen (O2) and other gases are usually used to improve the process, but the effect is limited. Accordingly, other physical methods other than generating gas are needed to improve the process.

[0004] Among them, during the etching process of the wafer, the plasma on the lower side of the electrode is in a free state, which is easy to disperse and become chaotic, and the plasma density cannot be guaranteed, which affects the etching efficiency. Utility Model Content

[0005] The utility model aims to solve the shortcomings in the prior art and proposes a step-shaped electrode for semiconductor engineering.

[0006] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0007] A step-shaped semiconductor engineering electrode comprises an electrode, wherein the electrode comprises a center disk and an annular sleeve block, wherein the annular sleeve block is coaxially sleeved on the outer wall of the center disk, the upper wall height of the center disk is flush with the upper wall height of the annular sleeve block or the upper wall height of the center disk is higher than the upper wall height of the annular sleeve block, and the lower wall height of the annular sleeve block is lower than the lower wall height of the center disk, and an outward expansion inclined surface is provided on a side of the annular sleeve block close to the center disk.

[0008] Preferably, the turning point between the outwardly expanded inclined surface and the side surface is flush with the lower wall of the center disk, the upper wall height of the center disk is flush with the upper wall of the annular sleeve block, and the outer wall of the annular sleeve block maintains a vertical surface structure.

[0009] Preferably, the cross section of the center disk adopts an inverted T-shaped structure, and the side of the center disk includes a protrusion and a groove.

[0010] Preferably, the upper wall height of the annular sleeve is lower than that of the center disk, and the side edge of the upper wall of the annular sleeve close to the center disk includes a fitting surface and an outwardly expanding inclined surface, and the turning point between the outwardly expanding inclined surface and the fitting surface is flush with the lower wall of the center disk.

[0011] Preferably, an annular groove is provided at the lower end of the outer side wall of the center disk.

[0012] Preferably, the height difference between the lower wall of the annular block and the lower wall of the center disk is greater than 0.1 mm.

[0013] Compared with the prior art, the beneficial effects of the utility model are:

[0014] During the use of the electrode of the utility model application, when the plasma moves from one side of the electrode toward the wafer under the action of electromagnetic force, the lower wall of the annular sleeve is lower than the lower wall of the center disk, so that the lower wall of the electrode as a whole forms a step-type structure, the plasma on the lower side of the electrode is gathered, and the outward expansion slope of the annular sleeve is used to increase the covering area of ​​the lower opening of the electrode, further improve the density of plasma convergence, thereby improving the process efficiency of plasma etching and improving etching efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more specifically and intuitively illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art are briefly introduced below.

[0016] Figure 1 It is a schematic diagram of the structure proposed by the utility model;

[0017] Figure 2 The cross-sectional structure of the utility model is shown in FIG. Figure 1 ;

[0018] Figure 3 The cross-sectional structure of the utility model is shown in FIG. Figure 2 ;

[0019] Figure 4 The electrode application diagram proposed in this utility model Figure 1 ;

[0020] Figure 5 The electrode application diagram proposed in this utility model Figure 2 .

[0021] In the figure: electrode 1, center disk 2, annular sleeve block 3, outward expansion inclined surface 4, protrusion 5, groove 6, fitting surface 7, annular groove 8. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0023] Reference Figure 1A step-shaped electrode for semiconductor engineering includes an electrode 1, which includes a center disk 2 and an annular sleeve block 3. The annular sleeve block 3 is coaxially sleeved on the outer wall of the center disk 2. The upper wall height of the center disk 2 is flush with the upper wall height of the annular sleeve block 3 or the upper wall height of the center disk 2 is higher than the upper wall height of the annular sleeve block 3, and the lower wall height of the annular sleeve block 3 is lower than the lower wall height of the center disk 2. An outward expansion slope 4 is provided on the side of the annular sleeve block 3 close to the center disk 2.

[0024] Among them, the height difference between the lower wall of the annular sleeve 3 and the lower wall of the central disk 2 is greater than 0.1 mm.

[0025] During the use of the electrode of the present application, the electrode 1 is installed on the lower side of the cooling plate of the etching chamber. After the vacuum operation of the etching chamber is completed, the device is started. After the device is started, the ionized gas-like substance composed of positive and negative ions generated after the atoms and atomic groups that are deprived of some electrons are ionized forms a plasma. The plasma moves from one side of the electrode 1 to the wafer under the action of the electromagnetic force. During this movement, the lower wall of the annular sleeve 3 is lower than the lower wall of the center disk 2 to form a step-type structure on the lower wall of the electrode 1 as a whole, so that the plasma on the lower side of the electrode 1 is gathered, and the outer expansion slope 4 of the annular sleeve 3 is used to increase the coverage area of ​​the lower mouth of the electrode 1, thereby further improving the density of plasma convergence, thereby improving the process efficiency of plasma etching, and improving the etching efficiency.

[0026] The annular sleeve 3 and the center disk 2 can be produced in an integrated manner or can be produced separately and then assembled, thereby improving the practicality of the electrode 1.

[0027] refer to Figure 2 and Figure 4 ,

[0028] In this case, the turning point of the outwardly expanded inclined surface 4 and the side surface is flush with the lower wall of the center disk 2, the upper wall height of the center disk 2 is flush with the upper wall of the annular sleeve block 3, and the outer wall of the annular sleeve block 3 maintains a vertical surface structure, which is convenient for the installation and use of the electrode 1 and provides the integrity of the electrode 1.

[0029] refer to Figure 3 and Figure 5 ,

[0030] In addition, the cross section of the center disk 2 adopts an inverted T-shaped structure, and the side of the center disk 2 includes a protrusion 5 and a groove 6.

[0031] Correspondingly, the upper wall height of the annular block 3 is lower than the upper wall height of the center disk 2. The side edge of the upper wall of the annular block 3 close to the center disk 2 includes a fitting surface 7 and an outwardly expanding inclined surface 4. The turning point between the outwardly expanding inclined surface 4 and the fitting surface 7 is flush with the lower wall of the center disk 2.

[0032] The lower end of the outer wall of the center plate 2 is provided with an annular groove 8.

[0033] The corresponding plasma equipment has an installation groove on the outer wall of the annular sleeve block 3, thereby improving the stability of the overall installation of the electrode 1 and further improving the convenience of the installation process of the electrode 1 through the combination.

[0034] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A step-shaped semiconductor engineering electrode, comprising an electrode (1), characterized in that: The electrode (1) comprises a central disk (2) and an annular sleeve block (3); the annular sleeve block (3) is coaxially sleeved on the outer wall of the central disk (2); the upper wall of the central disk (2) is flush with the upper wall of the annular sleeve block (3) or the upper wall of the central disk (2) is higher than the upper wall of the annular sleeve block (3); and the lower wall of the annular sleeve block (3) is lower than the lower wall of the central disk (2); and an outward expansion inclined surface (4) is provided on a side of the annular sleeve block (3) close to the central disk (2).

2. A step-shaped semiconductor engineering electrode according to claim 1, characterized in that: The turning point between the outwardly expanded inclined surface (4) and the side surface of the annular sleeve block (3) close to the central disk (2) is flush with the lower wall of the central disk (2), the upper wall of the central disk (2) is flush with the upper wall of the annular sleeve block (3), and the outer wall of the annular sleeve block (3) maintains a vertical surface structure.

3. The step-shaped semiconductor engineering electrode according to claim 1, characterized in that: The cross section of the central disk (2) adopts an inverted T-shaped structure, and the side edge of the central disk (2) comprises a protrusion (5) and a groove (6).

4. A step-shaped semiconductor engineering electrode according to claim 2, characterized in that: The height of the upper wall of the annular sleeve (3) is lower than the height of the upper wall of the central disk (2); the side edge of the upper wall of the annular sleeve (3) close to the central disk (2) comprises a fitting surface (7) and an outwardly expanding inclined surface (4); the turning point between the outwardly expanding inclined surface (4) and the fitting surface (7) is flush with the lower wall of the central disk (2).

5. A step-shaped semiconductor engineering electrode according to claim 4, characterized in that: An annular groove (8) is provided at the lower end of the outer side wall of the center disk (2).

6. A step-shaped semiconductor engineering electrode according to any one of claims 1 to 5, characterized in that: The height difference between the lower wall of the annular sleeve (3) and the lower wall of the central disk (2) is greater than 0.1 mm.

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