Sialon phosphor

A phosphor and sialon technology, applied in luminescent materials, electric solid devices, semiconductor devices, etc., can solve the problems of increased displacement and reduced luminous intensity, and achieve the effect of cheap manufacturing

Inactive Publication Date: 2013-07-31
THE FUJIKURA CABLE WORKS LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in these phosphors, the amount of substitution from Ca to Y increases, and there is a problem that the emission intensity decreases rapidly as the emission wavelength becomes longer.

Method used

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  • Sialon phosphor
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Experimental program
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Effect test

Embodiment Construction

[0029] The sialon phosphor of the present invention is a phosphor activated by europium (Eu) and solid-dissolved with lutetium (Lu), specifically having the composition and structure represented by the general formula (1), more specifically having the general formula Composition and structure shown in (2).

[0030] Lu p (Si,Al) 12 (O, N) 16 :Eu q (1)

[0031] Lu p Si 12-(m+n) Al (m+n) o n N 16-n :Eu q (2)

[0032] The above general formulas (1) and (2) are shown using atomic ratios. In the general formulas (1) and (2), p and q represent Lu and Eu when the total amount of silicon (Si) and Al is 12 in atomic ratio and the total amount of O and N is 16. amount. p is preferably not less than 0.25 and not more than 0.65. q is preferably not less than 0.03 and not more than 0.08.

[0033] Next, the ratio of solid solution elements will be described. The α-sialon has a structure in which a part of the Si-N bond of α-type silicon nitride is replaced b...

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Abstract

A SiAlON phosphor represented by a general formula (1) Lup(Si, Al)12(O, N)16:Euq  (1) wherein at least a main phase has an alpha SiAlON crystal structure; and 0.25≦̸p≦̸0.65.

Description

technical field [0001] The present invention relates to a SiALON phosphor which has conventionally been bright and emits light on the long-wavelength side and can be suitably used in white light-emitting diode lamps and the like, and a light-emitting device using the same. [0002] this application claims priority based on Japanese Patent Application No. 2007-074657 for which it applied to Japan on March 22, 2007, and uses the content here. Background technique [0003] In the field of lighting, etc., solid-state lighting, especially white lighting using semiconductor light-emitting diodes, is expected, and a lot of research and development has been devoted to it. All white light-emitting diode lamps achieve luminous efficiency equal to or higher than that of incandescent bulbs, but in the process of further improvement, it is believed that they will be widely used as energy-saving lighting equipment in the near future. In addition, it does not contain substances with high ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C09K11/80H01L33/00H01L33/50
CPCC04B2235/3224C09K11/0883C09K11/7792C04B35/6262H01L33/502C04B2235/3873C04B35/597C04B2235/3865C04B2235/766H01L2224/32257H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2224/8592H01L2924/181C09K11/77928H01L2924/00014H01L2924/00H01L2924/00012
Inventor佐久间健广崎尚登
OwnerTHE FUJIKURA CABLE WORKS LTD