Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of creating image in photoresist laminate

A technology of photoresist and laminate, which is applied in the exposure method of radiation-sensitive masks, the photoplate making process of patterned surfaces, optics, etc., and can solve the problems of product quality reduction and defective products.

Inactive Publication Date: 2010-12-22
MACDERMID INC
View PDF1 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the quality of the final product will be reduced and defective products will be produced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] In one embodiment, the present invention relates generally to an improved method for producing an image in a dry film resist laminate comprising the steps of:

[0012] (1) Provide a dry film resist laminate comprising the following layers:

[0013] a) top layer, which can be removed by peeling off from the laminate;

[0014] b) a layer of dry film photoresist disposed on the top layer;

[0015] c) a transparent or translucent coating on the dry film photoresist; and

[0016] d) a bottom layer disposed on the coating, wherein the bottom layer can be removed by peeling off from the laminate;

[0017] (2) peeling the top layer from the dry film laminate, and applying the dry film laminate to a surface by applying heat and pressure such that the layer of dry film photoresist is adjacent to the surface;

[0018] (3) peeling off the bottom layer from the dry film laminate so that the coating is exposed;

[0019] (4) selectively exposing the layer of dry film photoresist t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A process for creating an image in a dry-film resist laminate. The dry-film resist laminate comprises in order, a peelable top layer, a layer of dry-film resist, a clear or translucent coating layer, and a peelable bottom layer. The top layer is peeled from the laminate and the laminate is applied to a surface using heat and pressure. Thereafter, an image is created in the layer of dry-film resist and the resist is developed to remove uncured portions of the layer of photoresist along with the clear or translucent coating layer.

Description

technical field [0001] The present invention relates to an improved method for producing images in photoresist buildup materials. Background technique [0002] Photosensitive compositions suitable as photoresists are well known in the art and may be positive or negative working. The photosensitive composition generally comprises a polymeric binder, at least one monomeric or oligomeric material capable of polymerizing and / or crosslinking, and a photoinitiator or photoinitiator system. Exposure to actinic radiation initiates polymerization and / or crosslinking reactions rendering the material insoluble in developing solvents. The latent image thus formed is developed by treatment with a suitable developing solvent. [0003] The photosensitive composition can be formed as a dry film photoresist layer on a support. Dry film photosensitive compositions are generally prepared by combining the desired ingredients in a solvent, coating the solvated material onto a transparent supp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03C1/805
CPCG03F7/092H05K3/0082G03F7/161G03F7/027H05K3/064H05K2203/107H05K2201/0108
Inventor J·甘耶伊D·J·哈特S·阿博特M·谢尔登
Owner MACDERMID INC