A structure for detecting the degree of alloying in eutectic bonding

A technology of alloying degree and eutectic bonding, which is applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of non-destructive detection of eutectic bonding quality, and achieve accurate conductivity and precision with high resolution effects

Active Publication Date: 2016-09-28
JIANGSU AITEMAN ELECTRONICS TECH
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a structure and method for detecting the degree of alloying in bonding to solve the problem of non-destructive detection of eutectic bonding quality

Method used

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  • A structure for detecting the degree of alloying in eutectic bonding
  • A structure for detecting the degree of alloying in eutectic bonding
  • A structure for detecting the degree of alloying in eutectic bonding

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Embodiment Construction

[0016] Such as figure 1 A structure for detecting the degree of alloying in eutectic bonding is shown, including a test electrode 3 connected to the bonding layer 2 on the eutectic bonding substrate 1, and the test electrode 3 is arranged on the bonding layer 2 Between the bonding substrate 1 and the bonding layer 2 area is covered, and the lead pad 4 is drawn out from the test electrode.

[0017] The electrodes can consist of two forms:

[0018] a kind of like figure 2 As shown: there are multiple test electrodes 3 uniformly distributed under the bonding layer 2 , and each test electrode 3 leads to eight lead pads 4 at different positions. The resistance value of the bonding interface and the resistance value of the bonded alloy are respectively detected by the four-wire Kelvin test method, and the resistance value of the bonded alloy can be tested by testing the lead pads of I, II, IV, V or IV, V, VII, and VIII. Resistance test, test I, IV, V, VIII lead pads can be used ...

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Abstract

The invention discloses a structure for detecting the alloying degree in eutectic bonding. The structure is characterized by comprising a testing electrode; the testing electrode is located on a eutectic bonding substrate and connected with a bonding layer, the testing electrode is arranged between a bonding layer and the eutectic bonding substrate and covers a bonding layer area, and a lead bonding pad is led out from the testing electrode. By means of the structure and method for detecting the alloying degree in eutectic bonding, the electrode and a testing structure are directly manufactured on a bonding ring, alloying conditions in any areas on a wafer can be independently tested, and the process uniformity can be evaluated. The structure is not influenced by materials of the substrate, and alloying analysis can be carried out under any material condition of the substrate or the upper surface of the substrate. By means of the structure, the four-probe method and the resistance comparison method are adopted in the electrode resistance testing connecting method, the conductivity of the bonding ring can be accurately measured, and the accuracy and the resolution ratio are both more higher than those in the prior art.

Description

technical field [0001] The invention relates to a structure for detecting bonding quality, in particular to a structure and method for detecting alloying degree in eutectic bonding. Background technique [0002] Bonding is the way two solids bond to each other through "bonds." Atoms can use electrons to bond in a variety of ways, including covalent, ionic, and metallic bonds. [0003] Bonding techniques commonly used in modern semiconductor technology include: electrostatic bonding, thermocompression bonding, glass sintering bonding, direct bonding, eutectic bonding, organic bonding, etc. Among them, eutectic bonding is a technology in which two or more metals form a low melting point alloy in a certain proportion to achieve bonding. Eutectic bonding has the advantages of not being limited by the substrate material, less affected by the roughness of the bonding surface, good airtight characteristics, and low process temperature. It is a common technology for sensor wafer-le...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/66
CPCH01L22/32
Inventor焦斌斌曾立天
OwnerJIANGSU AITEMAN ELECTRONICS TECH