Four-state magnetic storage unit realizing data writing-in by utilization of electric field
A magnetic storage unit and data writing technology, which is applied in the field of computer storage, can solve the problem of uncontrollable flip direction and achieve the effect of shape anisotropy and arrangement optimization
Active Publication Date: 2015-08-19
TSINGHUA UNIV
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These experiments confirmed on the one hand that in the magnetoelectric composite structure, the external electric field can indeed cause the magnetization of the magnetic layer to flip; on the other hand, it also shows that when the magnetic layer is in-plane In the case of a permanent elliptical sheet, the flip direction of the magnetization under the action of an applied electric field is uncontrollable, so only binary storage can be realized
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[0031] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0032] figure 1 Schematically shows the in-plane shape and arrangement direction of the magnetic recording layer of the four-state magnetic memory for writing data by using an electric field in the present invention. The shape in the magnetic layer is anisotropic, and has and only has 4-fold symmetry. The strain axis from the ferroelectric oxide layer is a diagonal direction, and the symmetry axis of the magnetic layer does not coincide with the strain axis, so a non-zero angle θ is required. Phase field simulation shows that the optima...
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The invention discloses a four-state magnetic storage unit realizing data writing-in by utilization of an electric field. The four-state magnetic storage unit realizing data writing-in by utilization of the electric field comprises a first electrode layer; a ferroelectric oxide layer formed on the first electrode layer; a second electrode layer formed on the ferroelectric oxide layer; a magnetic recording layer formed on the second electrode layer, wherein the plane of the magnetic recording layer is in quadruple symmetry, and the magnetic recording layer is used for magnetic recording ; and a protection layer arranged on the magnetic recording layer to protect the magnetic recording layer. Compared with the prior art, the shape anisotropy and arrangement of the magnetic recording layer is optimized, the overturning direction of the magnetization intensity of the magnetic recording layer can be controlled by the effect of an external voltage, and four states of the magnetization intensity can be written in through the external voltage, so that quaternary data storage is realized.
Description
technical field [0001] The invention relates to a four-state magnetic storage unit for writing data by using an electric field and a horizontal magnetic recording device with the storage unit, belonging to the technical field of computer storage. Background technique [0002] Existing commercialized magnetic storage technologies write data based on magnetic fields or electric currents. One disadvantage of using magnetic fields or electric currents to write data is the high power consumption during operation. In order to solve this problem, the concept and design of magnetoelectric random access memory (MeRAM) using electric field for read and write operations has been proposed. For magnetoelectric random access memory (MeRAM), when writing data, an external electric field is used to generate strain in the ferroelectric layer, and then the magnetization state of the magnetic layer is regulated by the strain. When the magnetic layer in the magnetoelectric random access memor...
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IPC IPC(8): H01L43/02H01L27/22H10N50/80
Inventor 南策文王建军李峥胡嘉冕冯明马静陈龙庆林元华沈洋
Owner TSINGHUA UNIV