A four-state magnetic memory cell using electric field to write data

Abstract

The invention discloses a four-state magnetic storage unit which uses an electric field to write data. It includes: a first electrode layer; a ferroelectric oxide layer formed on the first electrode layer; a second electrode layer formed on the ferroelectric oxide layer; a magnetic recording layer, the magnetic recording layer is formed on the second electrode layer, the plane of the magnetic recording layer has 4-fold symmetry, and is used for magnetic recording, and the ferroelectric oxide layer and the magnetic There is magnetoelectric effect coupling between the recording layers; and a protective layer, the protective layer is arranged on the magnetic recording layer to protect the magnetic recording layer. Compared with the prior art, the present invention optimizes the shape anisotropy and arrangement of the magnetic recording layer, so that the reversal direction of the magnetization of the magnetic recording layer under the action of an applied voltage can be controlled, and the four states of the magnetization All can be written by applying an external voltage to realize 4-ary data storage.

Description

technical field [0001] The invention relates to a four-state magnetic storage unit for writing data by using an electric field and a horizontal magnetic recording device with the storage unit, belonging to the technical field of computer storage. Background technique [0002] Existing commercialized magnetic storage technologies write data based on magnetic fields or electric currents. One disadvantage of using magnetic fields or electric currents to write data is the high power consumption during operation. In order to solve this problem, the concept and design of magnetoelectric random access memory (MeRAM) using electric field for read and write operations has been proposed. For magnetoelectric random access memory (MeRAM), when writing data, an external electric field is used to generate strain in the ferroelectric layer, and then the magnetization state of the magnetic layer is regulated by the strain. When the magnetic layer in the magnetoelectric random access memor...

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Problems solved by technology

These experiments confirmed on the one hand that in the magnetoelectric composite structure, the external electric field can indeed cause the magnetization of the magnetic layer to flip; on the other hand, it also shows that when the magnetic layer is in-plane In the case of a permanent elliptical sheet, the flip direction of the magnetization under the action of an applied electric field is uncontrollable, so only binary storage can be realized

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