Light emitting diode crystalline grain and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of current concentration, low light-emitting efficiency of light-emitting diode crystal grains, and affect the light-emitting effect of light-emitting diode grains, so as to achieve the goal of improving light extraction efficiency Effect

Active Publication Date: 2016-03-30
ZHANJING TECH SHENZHEN +1
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Problems solved by technology

[0003] However, when current is injected from the P pole to the N pole of the horizontal light-emitting diode grain, due to the electrical characteristics of the current, the current between the two electrodes on the same side often takes the shortest distance, resulting in the current being concentrated in the shortest path. on the channel
As a result, the light emitting diode grains are uneven, which in turn affects the light emitting effect of the light emitting diode grains
In order to achieve the purpose of a uniform circuit, the industry generally adopts metal extension electrodes arranged at intervals on the N pole and the P pole. However, the metal extension electrodes usually cover the light-emitting surface, resulting in low light-emitting efficiency of the LED grains.

Method used

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  • Light emitting diode crystalline grain and manufacturing method thereof
  • Light emitting diode crystalline grain and manufacturing method thereof

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Embodiment Construction

[0016] see figure 1 , the light emitting diode grain 10 of the present invention comprises a substrate 11, a first semiconductor layer 12 stacked upward from the substrate 11, an active layer 13, a second semiconductor layer 14 and a transparent conductive layer 19, a first electrode 15 and a second electrode 16 are respectively formed on the first semiconductor layer 12 and the transparent conductive layer 19 and located on opposite sides of the LED die 10 .

[0017] The material of the substrate 11 may be one of sapphire (Al2O3), silicon carbide (SiC), silicon (Si), gallium nitride (GaN) or zinc oxide (ZnO).

[0018] In this embodiment, the first semiconductor layer 12 is an N-type semiconductor layer. One side of the upper surface of the first semiconductor layer 12 away from the substrate 11 is exposed, and the opposite side is covered by the active layer 13 , thereby forming an exposed first region 1211 and a covered second region 1212 . The active layer 13 and the seco...

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Abstract

A light emitting diode crystalline grain includes a substrate; and a first semiconductor layer, an active layer, a second semiconductor layer and a transparent conductive layer which are formed in sequence at the upper surface of the substrate. First and second electrodes are respectively formed on the first semiconductor layer and the transparent conductive layer. A plurality of spaced groove is disposed in the first semiconductor layer. The depth of the grooves decreases as the distance to the first electrode increases. The transparent conductive layer comprises a plurality of extension portions penetrating into the second semiconductor layer and being respectively spaced with the grooves of the first semiconductor layer correspondingly. The conductivity of the extension portions decreases sequentially along the direction adjacent to the second electrode. The invention further relates to a manufacturing method of the light emitting diode crystalline grain.

Description

technical field [0001] The invention relates to a semiconductor crystal grain structure, in particular to a light-emitting diode crystal grain and a method for manufacturing the light-emitting diode crystal grain. Background technique [0002] An existing horizontal light emitting diode (Light Emitting Diode, LED) crystal grain includes a substrate, a semiconductor light emitting structure grown on the substrate, and two electrodes. Because the sapphire substrate is not conductive, the N pole and P pole electrodes are usually plated on the same side, thus forming a horizontal structure. [0003] However, when current is injected from the P pole to the N pole of the horizontal light-emitting diode grain, due to the electrical characteristics of the current, the current between the two electrodes on the same side often takes the shortest distance, resulting in the current being concentrated in the shortest path. on the channel. As a result, the light emitting diode grains ar...

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Application Information

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IPC IPC(8): H01L33/20H01L33/14H01L33/00
CPCH01L33/20H01L33/005H01L33/382H01L2933/0016
Inventor黄嘉宏邱镜学杨顺贵凃博闵黄世晟
OwnerZHANJING TECH SHENZHEN