Power amplifier of L band microwave transistor

A power amplifier and transistor technology, applied in the field of electronics, can solve problems such as the enlargement of power amplifiers

Inactive Publication Date: 2016-08-31
SHAANXI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is a problem of increasing the size of the power amplifier due to the necessity of surface mount components, so the miniaturization of the power amplifier has been sought in the past

Method used

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  • Power amplifier of L band microwave transistor
  • Power amplifier of L band microwave transistor
  • Power amplifier of L band microwave transistor

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] Attached below Figures 1 to 5 and specific embodiments to further describe the application principle of the present invention.

[0026] The L-band microwave transistor power amplifier includes: a transistor 2, a bias circuit 3, a stabilization circuit 4 and a matching circuit 5;

[0027] The transistor 2 , the bias circuit 3 , the stabilizing circuit 4 and the matching circuit 5 are integrated on the circuit board 1 , the transistor 2 is connected to the bias circuit 3 , the stabilizing circuit 4 is connected to the transistor 2 , and the matching circuit 5 is connected to the transistor 2 .

[0028] The transisto...

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Abstract

The invention discloses a power amplifier of an L band microwave transistor. The transistor, a biasing circuit, a stabilizing circuit and a matching circuit are integrated on a circuit board. The transistor is connected with the biasing circuit. The biasing circuit is connected with the stabilizing circuit. The stabilizing circuit is connected with the matching circuit. According to the power amplifier of the L band microwave transistor, the gain is greater than 16 dB, the standing-wave ratio VSWR is less than 2, the final demand of design is satisfied, K is more than 1, and therefore, the whole circuit is unconditionally stable.

Description

technical field [0001] The invention belongs to the field of electronic technology, in particular to an L-band microwave transistor power amplifier. Background technique [0002] In a power amplifier used in a transceiver, there is a problem that the noise in the reception band will be deteriorated if the power leaked to the reception band is increased. Therefore, the amount of power leaked into the receive band is determined by the standard. One of the main causes of deteriorating the noise characteristics in the reception band is beat noise. Difference frequency noise is the noise of the difference frequency between the transmitted frequency signal and the received frequency. Since the beat frequency noise is mixed with the transmission frequency signal, the noise power is amplified, deteriorating the reception band noise characteristics. As a countermeasure against such beat frequency noise, conventionally, for example, as disclosed in JP 2008-28635 A, there is known a...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H03F1/56H03F3/24
CPCH03F1/56H03F3/245
Inventor贾建科
OwnerSHAANXI UNIV OF TECH