35 results about "Microwave transistors" patented technology

A microwave transistor structure comprising: (a) a SiC substrate having a top surface; (b) a silicon semiconductor material of a first conductivity type overlaying the top surface of the semiconductor substrate and having a top surface; (c) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (d) a channel region of the first conductivity type formed completely within the silicon semiconductor material including a channel dopant concentration; (e) a drain region of the second conductivity type formed in the silicon semiconductor material and contacting the channel region; (f) a body region of the first conductivity type and having a body region dopant concentration formed in the silicon semiconductor material under the conductive gate region; (g) a source region of the second conductivity type and having a source region dopant concentration formed in the silicon semiconductor material within the body region; (h) a shield plate region being adjacent and being parallel to the drain region formed on the top surface of the silicon semiconductor material over a portion of the channel region; wherein the shield plate region is adjacent and parallel to the conductive gate region; and wherein the shield plate extends above the top surface of the silicon semiconductor material to a shield plate height level, and is insulated from the top-surface of the silicon semiconductor material; and (i) a conductive plug region formed in the body region of the silicon semiconductor material to connect a lateral surface of the body region to the top surface of the substrate.

A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first conductivity type; (7) a source region of the second conductivity type; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.

A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (3) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (4) a channel region of a second conductivity type and having a channel dopant concentration; (5) a drain region of the second conductivity type and having a drain dopant concentration greater than the channel region dopant concentration; (6) a body of the first conductivity type and having a body region dopant concentration; (7) a source region of the second conductivity type and having a source region dopant concentration; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and wherein the shield plate extends above the top surface of the silicon semiconductor material to a shield plate height level; and wherein the shield plate is insulated from the top surface of the silicon semiconductor material; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.

A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (C) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (D) at least one horizontal drain extension region of a second conductivity type and having a horizontal drain extension dopant concentration; (E) a step drain region formed in the silicon semiconductor material, and contacting the horizontal drain extension region; (F) a body region of the first conductivity type and having a body region dopant concentration; (G) a source region of the second conductivity type and having a source region dopant concentration; (H) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the horizontal drain extension region, the shield plate being adjacent and parallel to the horizontal drain extension region; the shield plate being adjacent and parallel to the conductive gate region; and (I) a conductive plug region.

A microwave / millimeter wave sensor apparatus can obtain sensitive detected information while attaining a simple constitution, low costs and high efficiency of power. In the sensor apparatus, a planar radiation type oscillator substrate (S1) having an inner layer GND (12) interposed between a front surface side dielectric substrate (10) and a rear surface side dielectric substrate (11) has a pair of conductor patches (4, 4) axisymmetrically on the side of a front surface layer (16). A gate (2) and a drain (3) of a microwave transistor (1) are respectively connected to the conductor patches (4,4) to supply power to the gate (2) and the drain (3) of the microwave transistor (1) by a gate-side RF choke circuit (5a) and a drain-side RF choke circuit (5b). An impedance line (9) satisfying an oscillation condition is connected to a source (8) to transmit a transmission RF signal in an RF zone as a planar radiation type oscillator and to receive a reception RF signal as reflected waves from a matter to be measured, thus obtaining an IF signal as detected information by homodyne mixing.

A microwave / millimeter wave sensor apparatus including a planar radiation type oscillator substrate having an inner-layer GND interposed between a front surface side dielectric substrate and a rear surface side dielectric substrate and a pair of conductor patches in an axis-symmetric manner on the side of the front surface layer. A gate and drain of a microwave transistor are respectively connected to the conductor patches to supply power to the gate and the drain of the microwave transistor through a gate-side RF choke circuit and a drain-side RF choke circuit. An impedance line satisfying an oscillation condition is connected to a source and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.

A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency / frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.

A universal test fixture for testing and characterization of high-power flange-packaged RF and microwave transistors and diodes includes a precision-machined heat sink having a built-in center cavity with a finger catch on either side of the cavity which uses a plurality of matching modules that are installed in the center cavity and designed as transistor or diode carrier modules to provide mounting for the high-power packaged RF and microwave devices in a wide variety of flange type packages, an adjustable clamping structure connected to a movable arm, and a plurality of non-conductive high temperature pressure clamps. Each carrier module is made of a gold-plated rectangular aluminum block having a center cavity that is machined to the package outline. A non-conductive black-anodized high-temperature resistant pressure clamp machined to the package outline holds the packaged device in the carrier module. When clamped down using the clamping structure, the pressure clamp holds the package leads on a printed circuit board ensuring excellent electrical contact between package leads and circuit traces and surrounding ground planes, obviating soldering and desoldering the leads to the circuit board. The pressure clamp also produces pressure along the device package to hold the packaged device to the carrier module which houses the device and which itself is bolted to the heat sink resulting in excellent thermal contact under the device.

Coaxial microwave transistor test fixtures provide lowest insertion loss possible and include, as part of the input and output sections, transformer networks either in form of single stage λ / 4 segments, or, for larger bandwidth, multiple step segments or ramped transitions from 50Ω to the impedance closer to the internal impedance of the power transistor. The transforming networks are flat or cylindrical and can be made exchangeable in order to accommodate various transforming ratios using the same fixture body and coaxial adapters. The fixtures can be calibrated using standard TRL method.

Coaxial microwave transistor test fixtures provide lowest insertion loss possible and include, as part of the input and output sections, transformer networks in form of single stage λ / 4 segments bringing (pre-matching) the system 50Ω load closer to the conjugate internal impedance of power transistors. The transforming networks are flat, cylindrical or have oval or elliptical cross sections and have adjustable length, thus operating optimally for transistors with varying optimum frequency and internal impedance and / or capacitive or inductive impedance part. The change in length is done without affecting the overall fixture geometry and structure. The fixtures can be calibrated using standard TRL method.

The present invention is a dynamic emitter ballast resistor structure of a microwave power transistor. The structure is that the active area is divided into two adjacent areas, the emitter ballast resistor is placed between the two active areas, and the emitter and base electrodes adopt double The layer metal wiring leads out, and the two active areas share a ballast resistor. Advantages: The active area is divided into two adjacent areas, the emitter ballast resistor is placed between the two active areas, and the emitter and base electrodes are drawn out by double-layer metal wiring. Make the two active regions fully thermally coupled to the same ballast resistance, make the ballast resistance value increase with the increase of temperature, increase the additional ballast effect, and realize dynamic ballast. Share a ballast resistor, reduce the parasitic capacitance of the ballast resistor and the chip area. Increase the heat dissipation boundary of the active area and reduce the thermal resistance. For chips with the same power and ballast resistance, the peak junction temperature drops by 15°C-20°C. Meet the requirements of microwave power transistors for microwave performance and reliability.

A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency / frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.

The invention discloses a high temperature aging device for a microwave transistor. The high temperature aging device comprises an aluminum shell, a lower ceramic substrate, two L-shaped copper columns and an upper ceramic substrate, wherein the upper ceramic substrate, the two L-shaped copper columns and the lower ceramic substrate are put into the aluminum shell sequentially from top to bottom;the two L-shaped copper columns are arranged in a groove between the upper ceramic substrate and the lower ceramic substrate; and two long arms of the two L-shaped copper columns extend out of two square holes in the front wall of the aluminum shell respectively and are used as transistor lead-out electrodes. In the whole design, all adopted materials have high temperature resistance; a high temperature lead wire is connected with a peripheral circuit, so a circuit board can be prevented from being heated; therefore, a high acceleration life test at temperature of over 400 DEG C can be realized.

To provide a microwave / milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost. A radiation type oscillator is configured by a radiation type oscillator substrate S1 equipped with a microwave transistor 1 for generating negative resistance by short-duration operation and a resonant cavity structure, a high-frequency pulse signal of an oscillation frequency / frequency bandwidth determined based on negative resistance produced by the short-duration operation of the microwave transistor 1 and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space, and the radiation type oscillator is caused to perform oscillating operation when a received RF signal arriving from an external wireless communication device enters the radiation type oscillator, whereby a received data signal is established based on acquisition of an IF signal owing to mixing by the radiation type oscillator itself.

The invention discloses a high temperature aging device for a microwave transistor. The high temperature aging device comprises an aluminum shell, a lower ceramic substrate, two L-shaped copper columns and an upper ceramic substrate, wherein the upper ceramic substrate, the two L-shaped copper columns and the lower ceramic substrate are put into the aluminum shell sequentially from top to bottom;the two L-shaped copper columns are arranged in a groove between the upper ceramic substrate and the lower ceramic substrate; and two long arms of the two L-shaped copper columns extend out of two square holes in the front wall of the aluminum shell respectively and are used as transistor lead-out electrodes. In the whole design, all adopted materials have high temperature resistance; a high temperature lead wire is connected with a peripheral circuit, so a circuit board can be prevented from being heated; therefore, a high acceleration life test at temperature of over 400 DEG C can be realized.

The invention relates to a eutectic welding suction nozzle for achieving ultra fine spacing between patch devices in a microwave transistor case. The eutectic welding suction nozzle comprises a suction nozzle rod and a channel arranged in the suction nozzle rod in the axial direction, the suction nozzle rod comprises a suction nozzle rod body and a suction nozzle head, the bottom of the suction nozzle head is provided with a groove, the channel is communicated with the groove, the groove comprises a top wall, a first side wall and two oppositely arranged second side walls, and the first side wall and the second side walls are arranged in an outwards inclined mode. According to the eutectic welding suction nozzle, the wide side edge and two long side edges of each device are clamped through the first side wall and the two second side walls of the groove respectively, and one device cannot slide in the other three directions in the eutectic scrubbing process but can only slide in the direction close to the adjacent device, so that it is guaranteed that spacing between the adjacent devices is smaller than 20 micrometers all the time, ultra fine spacing is achieved, and a good solution is provided for high integration and miniaturization of microwave power transistors.

The invention discloses a narrow pulse generating circuit based on a tunnel diode. Including the main circuit and the driving circuit, the main circuit is mainly composed of the upper circuit including the microwave transistor Q2, the lower circuit including the microwave transistor Q1 and the microwave transistor Q3, and the amplification circuit including the microwave transistor Q1; the upper circuit and the lower circuit are connected in parallel, The input terminals of the upper and lower circuits are connected to the drive circuit, and the output terminals of the upper and lower circuits are output narrow pulse signals through the amplifying circuit. The upper, lower and amplifying circuits are all connected to the DC power supply VCC. The invention has simple structure, high emission frequency, can realize narrow pulse signal of nanosecond level or even picosecond level, has large output voltage and high reliability, and can be widely used because of its low cost.