Provided is a
microwave-, milliwave-band, high-frequency pulse
signal generation device which makes it possible to achieve a simpler structure,
improved performance, smaller integration, easier design, lower
power consumption, and lower cost. A planar
radiation oscillator substrate (S1) having an inner layer (GND12) interposed between a front
dielectric substrate (10) and a back
dielectric substrate (11) is provided with a pair of axially-symmetrical conductive patches (4, 4) in the radiating surface. A gate
electrode (2) and a drain
electrode (3) of a
microwave transistor (1) are connected to each of the conductive patches (4, 4). A
DC bias is supplied through an RF
choke circuit (5a) to the gate
electrode (2). A monopulse is supplied from a monopulse generation circuit (7) through an RF
choke circuit (5b) to the drain electrode (3). An impedance line (9) which satisfies the oscillation conditions is connected to a source electrode (8). A high-frequency pulse
signal, having an oscillation frequency and frequency bandwidth which are determined on the basis of the
negative resistance generated by the short-time operation of the
microwave transistor (1) and a
resonant cavity structure, radiates into space simultaneous to being generated.