Microwave transistor quasi-physical basis statistical model parameter extraction method

Abstract

The invention discloses a microwave transistor quasi-physical basis statistical model parameter extraction method, and relates to the technical field of electronic information-information. In order tosolve the problems in the prior art, the invention provides an implementation method for efficient parameter extraction of a device statistical model of a microwave gallium nitride high-electron-mobility transistor quasi-physical-base large-signal model. The method comprises the following steps: acquiring a large signal model parameter data set corresponding to a plurality of different GaN devicedies with the same size; and in the parameter data set, performing statistical analysis on the plurality of physical parameters and the sub-model parameters thereof, accurately characterizing association characteristics among the parameters in combination with a statistical theory of factor analysis, and finally realizing prediction of statistical distribution of device output characteristics.

Description

technical field [0001] The present invention relates to the field of electronic information-information technology. Background technique [0002] Microwave refers to electromagnetic waves with a working frequency of 300MHz-300GHz. In microwave integrated circuits and systems, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) are excellent because of their high output power density, high breakdown voltage and high cut-off frequency. characteristics and has been widely used. However, limited by the maturity of device manufacturing technologies such as epitaxial growth of semiconductor materials, the polarization and defects of the material itself and the unintentional doping of the device cannot be precisely controlled, which will lead to fluctuations in the parameters of the device process, destroying different batches or even The consistency of devices prepared in the same batch ultimately affects the yield of chip circuits designed based on the device process....

AI Technical Summary

Problems solved by technology

However, since the model parameter data sets corresponding to multiple GaN HEMT dies are relatively large, how to conduct efficient statistical analysis of model parameters and extract statistical parameters to effectively reduce the development time of the device process statistical model is an urgent issue for the current device process parameter statistical model. problem to be solved

Images