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High temperature aging device for microwave transistor

A transistor, high temperature technology, applied in the field of high-temperature burn-in devices of split microwave transistors, can solve the problems that materials cannot withstand high temperature, accelerated life test of burn-in devices, etc.

Active Publication Date: 2012-02-15
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device is only suitable for room temperature aging due to the integration of plastic molds, epoxy boards and components, and these materials cannot withstand high temperatures.
Therefore, the burn-in unit becomes the bottleneck of the accelerated life test

Method used

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  • High temperature aging device for microwave transistor
  • High temperature aging device for microwave transistor

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Embodiment Construction

[0018] A high-temperature aging device for microwave transistors, characterized in that it includes an aluminum casing 1, a lower ceramic substrate 2, two L-shaped copper pillars 3 and an upper ceramic substrate 4; the left and right side walls of the aluminum casing 1 have vertical To the anti-self-excited groove 5; the front wall of the aluminum shell 1 is provided with two square holes 6 adapted to the L-shaped copper pillar 3; a screw thread is provided between the two square holes 6 Hole 7; an upwardly protruding support 8 of the same size as the base of the microwave triode is provided on the inner bottom surface of the aluminum casing;

[0019] The upper surface of the lower ceramic substrate 2 is provided with two L-shaped first grooves 11 that are matched with the two L-shaped copper pillars 3 and arranged oppositely; the position between the short arms of the first groove 11 is set There is a first fixing hole 10 compatible with the support 8;

[0020] The lower sur...

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Abstract

The invention discloses a high temperature aging device for a microwave transistor. The high temperature aging device comprises an aluminum shell, a lower ceramic substrate, two L-shaped copper columns and an upper ceramic substrate, wherein the upper ceramic substrate, the two L-shaped copper columns and the lower ceramic substrate are put into the aluminum shell sequentially from top to bottom;the two L-shaped copper columns are arranged in a groove between the upper ceramic substrate and the lower ceramic substrate; and two long arms of the two L-shaped copper columns extend out of two square holes in the front wall of the aluminum shell respectively and are used as transistor lead-out electrodes. In the whole design, all adopted materials have high temperature resistance; a high temperature lead wire is connected with a peripheral circuit, so a circuit board can be prevented from being heated; therefore, a high acceleration life test at temperature of over 400 DEG C can be realized.

Description

technical field [0001] The invention relates to a high-temperature aging device for electronic devices, in particular to a split type microwave transistor high-temperature aging device. Background technique [0002] The accelerated life test is to accelerate the aging of the product by increasing the stress without changing the failure mechanism of the product, so as to obtain the failure information of the product in a short time, and then predict its life characteristics under normal stress. It is a fast calculation product Effective means of life and evaluation of reliability in long-term use. [0003] Microwave transistors are sensitive to temperature stress, and accelerated life tests with temperature as the main stress are generally used. The rated junction temperature of silicon devices is 175°C, and the step stress test in the accelerated life test can increase the junction temperature to 400°C, and the corresponding case temperature also exceeds 300°C, so a high te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 彭浩黄杰童亮张艳杰高金环
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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